CNRS-CRHEA | SEMI

publications
patents

Publications (29)
⋄ ScAlN/GaN-on-Si (111) HEMTs for RF applications Seif EL WHIBI, Nagesh BHAT, Yassine FOUZI, Nicolas DEFRANCE, Jean-Claude DE JAEGER, Zahia BOUGRIOUA, Florian BARTOLI, Maxime HUGUES, Yvon CORDIER, Marie LESECQ Appl. Phys. Express., , , (2025) - Papier régulier
⋄ Modelling and extraction of the specific contact resistance of GaN PiN diodes up to 40 GHz Kevin Nadaud, Zihao Lyu, Daniel Alquier, Quentin Paoli, Julien Ladroue, Arnaud Yvon, Eric Frayssinet, Yvon Cordier, Jérôme Billoué IEEE Trans. Electron. Devices, 72, 1657, (2025) - Papier régulier
⋄ ScAlN/GaN high electron mobility transistor heterostructures grown by ammonia source molecular beam epitaxy on Silicon substrate C. Elias, S. Chenot, F. Bartoli, M. Hugues and Y. Cordier Phys. Stat. Sol. A, , 2400963, (2025) - Papier régulier
⋄ Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte AIP. Adv, 14, 105109, (2024) - Papier régulier
⋄ High breakdown voltages on pseudo-vertical p-n diodes by selective area growth of GaN on silicon Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello, Hala El Rammouz, Matthieu Lafossas, Simona Torrengo, Laurent Mendizabal, Alain Gueugnot, Denis Mariolle, Thomas Jalabert, Julien Buckley, Yvon Cordier and Matthew Charles J. Appl. Phys., 136, 175705, (2024) - Papier régulier
⋄ Low-Temperature Epitaxy of Fe3O4 Thin Films on ZnO(0001) and Related Interface Studies Ismail Madaci, Elena Popova, Philippe Vennéguès, François Jomard, Maud Nemoz, Bruno Berini, Christian Morhain, and Yves Dumont Cryst. Growth Des., 24, 8248, (2024) - Papier régulier
⋄ Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi-Vertical GaN-on-Si p-n Diode on 200 mm-Diameter Wafers Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello, Hala El Rammouz, Vishwajeet Maurya, Matthieu Lafossas, Simona Torrengo, Helge Haas, Laurent Mendizabal, Alain Gueugnot, Denis Mariolle, Thomas Jalabert, Julien Buckley,Yvon Cordier, and Matthew Charles Phys. Stat. Sol. A, , 2400059, (2024) - Article de conférence
⋄ Novel Isolation Approach for GaN Based Power Integrated Devices Zahraa Zaidan, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, Luong-Viet Phung, Camille Sonneville, Dominique Planson, Yvon Cordier, Frederic Morancho, Hassan Maher Micromachines , 15, 1223, (2024) - Papier régulier
⋄ Al-rich AlGaN channel high electron mobility transistors on silicon: a relevant approach for high temperature stability of electron mobility Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, and Philippe Ferrandis Advanced Electronic Materials, , 2400069, (2024) - Papier régulier
⋄ Characterization of Very Thin 3C-SiC Epilayers on Si Marcin Zielinski, Marc Bussel, Marc Portail, Adrien Michon, Yvon Cordier Mat. Sci. For., 1124, 97-102, (2024) - Article de conférence
⋄ Mobility extraction via improved resistance partitioning methodology for normally-OFF fully-vertical GaN trench-MOSFETs Valentin Ackermann, Blend Mohamad, Hala El Rammouz, Vishwajeet Maurya, Eric Frayssinet, Yvon Cordier, Matthew Charles, Gauthier Lefevre, Julien Buckley, Bassem Salem Electronics, 13, 2350, (2024) - Papier régulier
⋄ Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates Shikha Kumari, Rashmi Singh, Shivam Kumar, N V L Narasimha Murty, Dominique Planson, Christophe Raynaud, Camille Sonneville, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Hassan Maher, Raphael Sommet, Jean-Christophe Nallatamby and P Vigneshwara Raja Semicond. Sci. Tech., 39, 065016 , (2024) - Papier régulier
⋄ Influence of dynamic morphological modifications of atom probe specimens on the intensity of their photoluminescence spectra E. M. Weikum, P. Dalapati, G. Beainy, J. M. Chauveau, M. Hugues, D. Lefebvre, J. Houard, A. Vella, and L. Rigutti JOSA B, 40, 1633, (2022) - Papier régulier
⋄ Highlighting the role of 3C‒SiC in the performance optimization of (Al,Ga)N‒based High‒Electron Mobility Transistors Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean‑Claude De Jaeger, Yvon Cordier Mat Sci Semicon Proc, 171, 107977, (2024) - Papier régulier
⋄ Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frederic Georgi, Maxime Hugues, Yvon Cordier, Francois Vurpillot, Lorenzo Rigutti Appl. Phys. Lett., 123, 162102, (2023) - Papier régulier
⋄ Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet Phys. Stat. Sol. A, 20, 2200841 , (2023) - Papier régulier
⋄ Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics J. Mehta, I. Abid, R. Elwaradi, Y. Cordier, and F. Medjdoub Advances in Electrical Engineering, Electronics and Energy, 5, 100263, (2023) - Papier régulier
⋄ Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications R. Elwaradi, E. Frayssinet, S. Chenot, Y. Bouyer, M. Nemoz, Y. Cordier Microelectron Eng, 277, 112017, (2023) - Article de conférence
⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte Microelectron Eng, 276, 112009, (2023) - Article de conférence
⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq, Yassine Fouzi, Ali Abboud, Nicolas Defrance, François Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude De Jaeger, Eric Frayssinet, Yvon Cordier Microelectron Eng, 276, 111998, (2023) - Article de conférence
⋄ Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles Microelectron Eng, 273, 111964, (2023) - Article de conférence
⋄ High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, G. Ducournau, Y. Roelens, Y. Cordier, M. Zaknoune J. Electron. Mat., 52, 5249, (2023) - Papier régulier
⋄ High Al-content AlGaN channel high electron mobility transistors on silicon substrate J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, and F. Medjdoub Advances in Electrical Engineering, Electronics and Energy, 3, 100114, (2023) - Papier régulier
⋄ Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in Vertical GaN-on-GaN Schottky Barrier Diodes P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Yvon Cordier and Dominique Planson Micro and Nanostructures, 172, 207433, (2022) - Papier régulier
⋄ Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond and Farid Medjdoub Electronics, 12, 2974, (2023) - Papier régulier
⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode Atse Julien Eric N'Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong-Viet Phung, Frederic Morancho, Hassan Maher, Dominique Planson Crystals, 13, 713, (2023) - Papier régulier
⋄ Effects of GaN channel downscaling in AlGaN-GaN high electron mobility transistor structures grown on AlN bulk substrate R. Elwaradi, J. Mehta, T. H. Ngo, M. Nemoz, C. Bougerol, F. Medjdoub, Y. Cordier J. Appl. Phys., 133, 145705, (2023) - Papier régulier
⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier APL Materials, 11, 031105, (2023) - Papier régulier
⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck Appl. Phys. Lett., 122, 092402, (2023) - Papier régulier

⋄ ScAlN/GaN-on-Si (111) HEMTs for RF applications

⋄ Modelling and extraction of the specific contact resistance of GaN PiN diodes up to 40 GHz

⋄ ScAlN/GaN high electron mobility transistor heterostructures grown by ammonia source molecular beam epitaxy on Silicon substrate

⋄ Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

⋄ High breakdown voltages on pseudo-vertical p-n diodes by selective area growth of GaN on silicon

⋄ Low-Temperature Epitaxy of Fe3O4 Thin Films on ZnO(0001) and Related Interface Studies

⋄ Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi-Vertical GaN-on-Si p-n Diode on 200 mm-Diameter Wafers

⋄ Novel Isolation Approach for GaN Based Power Integrated Devices

⋄ Al-rich AlGaN channel high electron mobility transistors on silicon: a relevant approach for high temperature stability of electron mobility

⋄ Characterization of Very Thin 3C-SiC Epilayers on Si

⋄ Mobility extraction via improved resistance partitioning methodology for normally-OFF fully-vertical GaN trench-MOSFETs

⋄ Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

⋄ Influence of dynamic morphological modifications of atom probe specimens on the intensity of their photoluminescence spectra

⋄ Highlighting the role of 3C‒SiC in the performance optimization of (Al,Ga)N‒based High‒Electron Mobility Transistors

⋄ Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

⋄ Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

⋄ Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics

⋄ Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications

⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

⋄ Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

⋄ High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

⋄ High Al-content AlGaN channel high electron mobility transistors on silicon substrate

⋄ Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in Vertical GaN-on-GaN Schottky Barrier Diodes

⋄ Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate

⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

⋄ Effects of GaN channel downscaling in AlGaN-GaN high electron mobility transistor structures grown on AlN bulk substrate

⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

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