Photo de Virginie Brändli
Name : Virginie Brändli
Status : Engineer
Grade : IECN
Team(s) : SCR Technology platform  MEB
: +33 4 93 95 4213
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Functions


Responsible for the Electronic Lithography (EBL) activity in the SCR team.
Responsible for scanning microscopy (SEM) activity in the SCR team.

Activities


Technology platform (lithography, chemistry, deposit, engraving, characterization)
MEB, EDX

Publications (18)


⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover
Sci Rep., 10,  18919, (2020) - Papier régulier

⋄ Metasurface orbital angular momentum holography

H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet
Nat. Commun, 10,  2986, (2019) - Papier régulier

⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126,  205701, (2019) - Papier régulier

⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet
J. Cryst. Growth, 526,  125235, (2019) - Papier régulier

⋄ Metasurfaces Orbital Angular Momentum Holography

H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet
Nat. Commun, 10,  2986, (2019) - Papier régulier

⋄ Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2-Gap-Mode Metasurfaces

P. Ni, A. de Luna Bugallo, V.M. Arellano Arreola, M.F. Salazar, E. Strupiechonski, V. Brändli, R. Sawant, B. Alloing and P. Genevet
ACS Photonics, 6, 7,  1594-1601, (2019) - Papier régulier

⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14),  1801271, (2019) - Papier régulier

⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,  045007, (2019) - Papier régulier

⋄ Gallium nitride MEMS resonators: how residual stress impacts design and performances

C. Morelle, D. Théron, J. Derluyn, S. Degroote, M. Germain, V. Zhang, L. Buchaillot, B. Grimbert, P. Tilmant, F. Vaurette, I. Roch-Jeune, V. Brändli, V. Avramovic, E. Okada, M.Faucher
IIEEE DTIP, 24,  371–377, (2018) - Article de conférence

⋄ Searching for THz Gunn oscillations in GaN planar nanodiodes

A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangare, M. Faucher, B. Grimbert, V. Brändli, G. Ducournau, and C. Gaquière
J. Appl. Phys., 111,  113705, (2012) - ...

⋄ GaN-based nano rectifiers for THz detection

P. Sangaré, G. Ducournau, B. Grimbert, V. Brändli, M. Faucher, C. Gaquière
IEEE IRMMW, IRMMW - THz 2012,  1-2, (2012) - Article de conférence

⋄ Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

P. Sangaré, G. Ducournau, B.Grimbert, V. Brändli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
J. Phys. D: Appl. Phys., 113,   034305, (2013) - ...

⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011,  1-5, (2011) - Article de conférence

⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf.,  581-584, (2011) - Article de conférence

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477,  262, (2017) - Papier régulier

⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy

P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9,  015502, (2016) - Papier régulier

⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties

P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252,  1096, (2015) - Papier régulier

⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A, 211,  1655-1659, (2014) - Papier régulier

Curriculum