Patents (9)


Main avec index What do A1, A2, A3 and B codes mean after a publication number
X
  • A publication A1 is a request of european patent published with the research report
  • A document A2 matches this request published without the research report
  • The the research report is published later as document A3
  • The issued patent est publié as document B
X
  • Une publication A1 est une demande de brevet européen publiée avec le rapport de recherche
  • Un document A2 correspond à cette demande publiée sans le rapport de recherche
  • Le rapport de recherche est publié plus tard en tant que document A3
  • Le brevet délivré est publié en tant que document B

CN106460229 (A)
22/02/2017

Doped rare earth nitride materials and devices comprising same

F. Natali, B.J. Ruck, H.J. Trodahl, S. Vézian
EP3127146 (A2), EP3127146 (A4), JP2017511294 (A), KR20170005409 (A), US2017022632 (A1), WO2015152737 (A2), WO2015152737 (A3)


FR3032064 (B1)
09/03/2018

Optoelectronic device and method for manufacturing same

J. Zúñiga-Pérez, S. Scaringella, B. Amstatt
EP3248227 (A1), FR3032064 (A1), WO2016116703 (A1), US2018277717 (A1)


FR3048002 (A1)
25/08/2017

Method making it possible to obtain a semi-polar nitride layer on a crystalline substrate

G. Feuillet, M. Khoury, P. Vennéguès, J. Zúñiga-Pérez
US2018182622 (A1)


FR3037713 (B1)
09/06/2017

Method making it possible to obtain on a crystalline substrate a semipolar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminum (Al)

M. Khoury, G. Feuillet, P. Vennéguès, J. Zúñiga-Pérez
EP3311394 (A1), FR3037711 (A1), FR3037713 (A1), US2018182622 (A1), JP2018520977 (A), WO2016202899 (A1)


FR3048002 (A1)

A method for obtaining a low defect semipolar nitride layer on a crystalline substrate

G. Feuillet, M. Khoury, P. Vennéguès, J. Zúñiga-Pérez
WO2017144429 (A1)



G. Feuillet, B. Mathieu, J. Zúñiga-Pérez, B. Alloing, V. Brändli


US11139167
05/10/2021

Growth of semipolar GaN on facetted silicon pilar-like structures for Led

J. Zúñiga-Pérez, P. Vennéguès, G. Feuillet


US2018327929 (A1)
15/11/2018

Method for producing nanostructures

S. Vézian, B. Damilano, J. Brault
CN107849735 (A), EP3307927 (A1), FR3037341 (A1), JP2018526230 (A), JP6772192 (B2), KR20180017124 (A), US11085130 (B2), WO2016198341 (A1)


WO2020254695 (A1)
24/12/2020

Process for producing nitride tiles each intended to form an electronic or optoelectronic device

G. Feuillet, B. Alloing, H. Bono, R. Dagher, J. Zúñiga-Pérez, M. Charles, J. Buckley, R. Escoffier
FR3097681 (A1), FR3097681 (B1)