Growth of graphene and BN using high-temperature CVD
Graphene and boron nitride (BN) have in common the need for high growth temperatures.
Based on its expertise in high-temperature CVD (chemical vapour deposition) growth of SiC,
the CRHEA has been developing an original method for growing graphene on SiC by CVD under hydrogen since 2010.
The presence of hydrogen can have a strong influence on growth and can, depending on the growth and cooling conditions,
lead to the formation of layers with azimuthal disorder or to monocrystalline layers on a hydrogenated interface.
Other conditions can lead to the growth of a monocrystalline layer (on a buffer layer) whose thickness is self-limited to a monolayer,
making it possible to grow uniform films on 2" SiC substrates.
These large-area graphene monolayers are mainly used as surfaces for the van der Waals growth of 2D or 3D materials,
but also for applications in electrical metrology.
Epitaxial graphene on a 2-inch diameter 6H-SiC substrate: morphology (left) and phase image (right) in AFM tapping. The yellow areas in the phase image reveal the presence of a second layer of graphene, with the rest of the surface covered by a single monolayer.
Growth facilities CVD « R1 » : horizontal hot walls 2" CVD reactor. Built in 2000 for SiC growth, it has also been used since 2010 for graphene growth.
CVD « R5 » : horizontal hot walls 2" CVD reactor. This is the twin reactor of R1, but adapted to V-elements for BN and AlN growth at high temperature.
Responsible : Adrien Michon (CR)
Short biography :
- 2007, PhD at LPN*: MOVPE growth of InAs/InP quantum dots
- post-doc at IEF*: unipolar vertical transport in nitrides
- post-doc at LPN*: technology of electrically pumped GaAs VECSELs
- 2010 : 2010: CR at CRHEA: graphene growth on SiC
*now C2N
Selected publications :
- A. Michon et al., Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition, Applied
Physics Letters 97, 171909 (2010)
- B. Jabakhanji et al., Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation
and annealing, Physical Review B 89, 085422 (2014)
- R. Ribeiro-Palau et al., Quantum Hall resistance standard in graphene devices under relaxed experimental conditions,
Nature Nanotechnology 10, 965 (2015)
- R. Dagher et al., A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations,
Cryst. Eng. Comm., 20, 3702 (2018)
- C. Mastropasqua et al., Self-limited monolayer graphene growth on SiC with propane-hydrogen CVD, npj 2D Mat. Appl. 9, 32 (2025)
Contact ?
