⋄ High-resolution cathodoluminescence of calcites from the Cold Bokkeveld chondrite: New insights on carbonatation processes in CM parent bodies
Vincent Guigoz, Anthony Seret, Marc Portail, Ludovic Ferrière, Guy Libourel, Harold C. Connolly Jr and Dante S. Lauretta
Meteorit Planet Sci., ,
, (2024)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ InN nanowire solar cells on Si with amorphous Si interlayer deposited by sputtering
M. Sun, R. Gomez, B. Damilano, J.M. Asensi, F.B. Naranjo, S. Valdueza-Felip
Mat Sci Semicon Proc, 176,
108321, (2024)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Multimode Emission in GaN Microdisk Lasers
Monty L. Drechsler, Luca Sung-Min Choi, Farsane Tabataba-Vakili, Felix Nippert, Aris Koulas-Simos, Michael Lorke, Stephan Reitzenstein, Blandine Alloing, Philippe Boucaud, Markus R. Wagner, and Frank Jahnke
Laser Photonics Rev., ,
2400221, (2024)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Perspectives for III-nitride photonic platforms
Philippe Boucaud, Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Antoine Reserbat-Plantey, Minh Tuan Dau, Mohamed Al Khalfioui, Blandine Alloing, Benjamin Damilano and Fabrice Semond
Nano Futures, 8,
022001, (2024)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Van der Waals Epitaxy of Weyl-Semimetal Td‑WTe2
Alexandre Llopez, Frédéric Leroy, Calvin Tagne-Kaegom, Boris Croes, Adrien Michon, Chiara Mastropasqua, Mohamed Al Khalfioui, Stefano Curiotto, Pierre Müller, Andrés Saùl, Bertrand Kierren, Geoffroy Kremer, Patrick Le Fèvre, François Bertran, Yannick Fagot-Revurat, and Fabien Cheynis
ACS Appl. Mater. Interfaces, 16,
20878, (2024)
- Papier régulier
|
⋄ Superlattice Quantum Solid of Dipolar Excitons
Camille Lagoin, Kirk Baldwin, Loren Pfeiffer, and François Dubin
Phys. Rev. Lett., 132,
176001, (2024)
- Papier régulier
|
⋄ Engineering 2D Material Exciton Line Shape with Graphene h-BN Encapsulation
Steffi Y. Woo, Fuhui Shao, Ashish Arora, Robert Schneider, Nianjheng Wu, Andrew J. Mayne, Ching-Hwa Ho, Mauro Och, Cecilia Mattevi, Antoine Reserbat-Plantey, Álvaro Moreno, Hanan Herzig Sheinfux, Kenji Watanabe, Takashi Taniguchi, Steffen Michaelis de Vasconcellos, Frank H. L. Koppens, Zhichuan Niu, Odile Stéphan, Mathieu Kociak, F. Javier García de Abajo, Rudolf Bratschitsch, Andrea Konečná, and Luiz H. G. Tizei
Nano Lett., 24,
11, (2024)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN/AlN bilayers for integrated photonics
Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Xavier Checoury, Benjamin Damilano, AND Philippe Boucaud
Opt. Mater. Express, 14,
792, (2024)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Highlighting the role of 3C‒SiC in the performance optimization of (Al,Ga)N‒based High‒Electron Mobility Transistors
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean‑Claude De Jaeger, Yvon Cordier
Mat Sci Semicon Proc, 171,
107977, (2024)
- Papier régulier
|
⋄ Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates
M. Takiguchi, S. Sergent, B. Damilano, S. Vézian, S. Chenot, N. Yazigi, P. Heidt, T. Tsuchizawa, T. Yoda, H. Sumikura, A. Shinya, and M. Notomi,
ACS Photonics, 11,
789, (2024)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
J. Appl. Phys., 135,
095702, (2024)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Fabrication strategies of flexible light sources based on micro/nano III-nitrideLEDs
Julien Bosch, Christophe Durand, Blandine Alloing, Maria Tchernycheva
Choisir un journal..., ,
, (2024)
- Papier invité
|
⋄ NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors
A. Iovan, A. Pedeches, T. Descamps, H. Rotella, I. Florea, F. Semond, and V. Zwiller
Appl. Phys. Lett., 123,
252602, (2023)
- Papier régulier
|
⋄ Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings
Alexandra Ibanez, Nikita Nikitskiy, Aly Zaiter, Pierre Valvin, Wilfried Desrat, Thomas Cohen, M. Ajmal Khan, Guillaume Cassabois, Hideki Hirayama, Patrice Genevet, Julien Brault, Bernard Gil
J. Appl. Phys., 134,
193103, (2023)
- Papier régulier
|
⋄ Large area MoS2 films grown on sapphire and GaN substrates by pulsed laser deposition
Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová-Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Nanomaterials, 13,
2837, (2023)
- Papier régulier
|
⋄ Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography
Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frederic Georgi, Maxime Hugues, Yvon Cordier, Francois Vurpillot, Lorenzo Rigutti
Appl. Phys. Lett., 123,
162102, (2023)
- Papier régulier
|
⋄ Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics
J. Mehta, I. Abid, R. Elwaradi, Y. Cordier, and F. Medjdoub
Advances in Electrical Engineering, Electronics and Energy, 5,
100263, (2023)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN
F. Giannazzo, S.E. Panasci, E. Schiliro, G. Greco, F. Roccaforte, G. Sfuncia, G. Nicotra, M. Cannas, S. Agnello, E. Frayssinet, Y. Cordier, A. Michon, A. Koos, B. Pecz
Appl. Surf. Sci., 631,
157513, (2023)
- Papier régulier
|
⋄ Silicon diffusion in AlN
V. Bonito Oliva, D. Mangelinck,S. Hagedorn, H. Bracht, K. Irmscher, C. Hartmann,
P. Vennéguès, and M. Albrecht
J. Appl. Phys., 134,
095103, (2023)
- Papier régulier
|
⋄ Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films
R. Aristegui, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, I. Paradisanos, C. Robert, X. Marie, B. Urbaszek, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 108,
125421, (2023)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions
M. GROMOVYI, N. BHAT, H. TRONCHE, P. BALDI, M. EL KURDI, X. CHECOURY, B. DAMILANO, AND P. BOUCAUD
Opt. Express, 31,
31397, (2023)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission
Aly Zaiter, Nikita Nikitskiy, Maud Nemoz, Phuong Vuong, Vishnu Ottapilakkal, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Nanomaterials, 13,
2404, (2023)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate
Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond and Farid Medjdoub
Electronics, 12,
2974, (2023)
- Papier régulier
|
⋄ Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale
Maya Wehbe, Matthew Charles, Kilian Baril, Blandine Alloing, Daniel Pino Munoz, Nabil Labchir, Jesús Zuniga-Perez, Carsten Detlefs, Can Yildirimf and Patrice Gergaud
J. Appl. Cryst., 56,
643, (2023)
- Papier régulier
|
⋄ High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes
Kilian Baril; Pierre-Marie Coulon; Mrad Mrad; Nabil Labchir; Guy Feuillet; Matthew Charles;
Cécile Gourgon; Philippe Vennéguès; Jesus Zuniga-Perez; Blandine Alloing
J. Appl. Phys., 133,
245702, (2023)
- Papier régulier
|
⋄ Epsilon-Near-Zero Enhancement of Nonlinear Responses from Intersubband Transitions in the Mid-Infrared
Geoffrey Barbet, Bo Qiang, Yuhao Jin, Tingting Wu, Patrice Genevet, Qijie Wang, Yu Luo
Adv. Opt. Mater., -,
2202786, (2023)
- Papier régulier
|
⋄ Uniform Huygens metasurfaces with postfabrication phase pattern recording functionality
E Mikheeva, R Colom, P. Genevet, F Bedu, I Ozerov, S Khadir, G Baffou, R Abdeddaim, S Enoch, and J Lumeau
ACS Photonics, 10,
1538, (2023)
- Papier régulier
|
⋄ Crossing of the branch cut: the topological origin of a universal 2π-phase retardation in non-Hermitian metasurfaces
R Colom, E Mikheeva, K Achouri, J Zuniga-Perez, N Bonod, O JF Martin, S Burger, and P Genevet
Laser Photonics Rev., -,
2200976 , (2023)
- Papier régulier
|
⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte
Microelectron Eng, 276,
112009, (2023)
- Article de conférence
|
⋄ High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers
G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, G. Ducournau, Y. Roelens, Y. Cordier, M. Zaknoune
J. Electron. Mat., 52,
5249, (2023)
- Papier régulier
|
⋄ Post-2000 Nonlinear Optical Materials and Measurements: Data Tables and Best Practices
Nathalie Vermeulen, Daniel Espinosa, Adam Ball, John Ballato, Philippe Boucaud, Georges Boudebs, Cecília L. A. V. Campos, Peter Dragic, Anderson S. L. Gomes, Mikko J. Huttunen, Nathaniel Kinsey, Rich Mildren, Dragomir Neshev, Lázaro Padilha, Minhao Pu, Ray Secondo, Eiji Tokunaga, Dmitry Turchinovich, Jingshi Yan, Kresten Yvind, Ksenia Dolgaleva, and Eric W. Van Stryland
J. Phys. Photonics, 5,
035001, (2023)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Marie Lesecq, Yassine Fouzi, Ali Abboud, Nicolas Defrance, François Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude De Jaeger, Eric Frayssinet, Yvon Cordier
Microelectron Eng, 276,
111998, (2023)
- Article de conférence
|
⋄ Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications
R. Elwaradi, E. Frayssinet, S. Chenot, Y. Bouyer, M. Nemoz, Y. Cordier
Microelectron Eng, 277,
112017, (2023)
- Article de conférence
|
⋄ Descriptor engineering in machine learning regression of electronic structure properties for 2D materials
M.T. Dau, M. Al Khalfioui, A. Michon, A. Reserbat-Plantey, S. Vézian and P. Boucaud
Sci Rep., 13,
5426, (2023)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC
Julien Bosch, Lucie Valera, Chiara Mastropasqua, Adrien Michon, Maud Nemoz, Marc Portail, Jesús Zúñiga-Pérez, Maria Tchernycheva, Blandine Alloing, Christophe Durand
Choisir un journal..., 275,
111995, (2023)
- Article de conférence
|
⋄ Super-Reflector Enabled by Non-Interleaved Spin-Momentum-Multiplexed Metasurface
He-Xiu Xu, Guangwei Hu, Xianghong Kong, Yanzhang Shao, Patrice Genevet, and Cheng-Wei Qiu
Light Sci Appl, 12,
78, (2023)
- Papier régulier
|
⋄ Universal Active Metasurfaces for Ultimate Wavefront Molding by Manipulating the Reflection Singularities
Mahmoud Elsawy, Christina Kyrou, Elena Mikheeva, Rémi Colom, Jean-Yves Duboz,Khosro Zangeneh Kamali, Stéphane Lanteri, Dragomir Neshev, and Patrice Genevet
Laser Photonics Rev., 17,
2200880, (2023)
- Papier régulier
|
⋄ Effects of GaN channel downscaling in AlGaN-GaN high electron mobility transistor structures grown on AlN bulk substrate
R. Elwaradi, J. Mehta, T. H. Ngo, M. Nemoz, C. Bougerol, F. Medjdoub, Y. Cordier
J. Appl. Phys., 133,
145705, (2023)
- Papier régulier
|
⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode
Atse Julien Eric N'Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong-Viet Phung, Frederic Morancho, Hassan Maher, Dominique Planson
Crystals, 13,
713, (2023)
- Papier régulier
|
⋄ Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications
Mohamed Bouabdellaoui, Monica Bollani, Marco Salvalaglio, Elie Assaf, Luc Favre ,
Mathieu Abel, Antoine Ronda, Olivier Gourhant, Fabien Deprat, Christophe Duluard,
Anne-Flore Mallet, Philippe Vennegues, Jean-Noel Aqua, Isabelle Berbezier
Appl. Surf. Sci., 630,
157226, (2023)
- Papier régulier
|
⋄ Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic Computing
Xiayang Hua, Jiyuan Zheng, Xu Han, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lin Gan, Mohamed Al Khalfioui, Julien Brault, Lai Wang
ACS Appl. Nano Mater., 6,
8461, (2023)
- Papier régulier
|
⋄ Growth of (10-11) Semipolar GaN-Based Light-Emitting Diode Structures on Silicon-on-Insulator
Beatrice Wannous, Pierre-Marie Coulon, Ludovic Dupré, Fabian Rol, Névine Rochat, Jesus Zuniga-Perez, Philippe Vennéguès, Guy Feuillet, François Templier
Phys. Stat. Sol. B, 260,
2200582, (2023)
- Article de conférence
|
⋄ Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy
Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet
Phys. Stat. Sol. A, 20,
2200841 , (2023)
- Papier régulier
|
⋄ High Al-content AlGaN channel high electron mobility transistors on silicon substrate
J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, and F. Medjdoub
Advances in Electrical Engineering, Electronics and Energy, 3,
100114, (2023)
- Papier régulier
|
⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
APL Materials, 11,
031105, (2023)
- Papier régulier
|
⋄ Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy
Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles
Microelectron Eng, 273,
111964, (2023)
- Article de conférence
|
⋄ Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening
Geoffrey Kreyder, Léa Hermet, Pierre Disseix, François Médard, Martine Mihailovic, François Réveret, Sophie Bouchoule, Christiane Deparis, Jesús Zuñiga-Pérez and Joël Leymarie
Phys. Rev. B, 107,
125307, (2023)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Why and how In composition fluctuations appear in InGaN ?
Jean-Yves Duboz, Wanda Isnard, Jesus Zuniga-Perez, and Jean Massies
J. Cryst. Growth, 603,
127033, (2023)
- Papier régulier
|
⋄ Dual-density waves with neutral and charged dipolar excitons of GaAs bilayers
Camille Lagoin, Stephan Suffit, Kirk Baldwin, Loren Pfeiffer, François Dubin
N. Mat. Nature Materials, 22,
170-174, (2023)
- Papier régulier
|
⋄ Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas
Max Meunier, John J. H. Eng, Zhao Mu, Sebastien Chenot, Virginie Brändli, Philippe de Mierry,
Weibo Gao and Jesús Zúñiga-Pérez
Nanophotonics, 12 (8),
1405-1419, (2023)
- Papier régulier
|
⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN
J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck
Appl. Phys. Lett., 122,
092402, (2023)
- Papier régulier
|
⋄ Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source
O. Romanyuk, J. Brault, I. Gordeev, E. Ukraintsev, J. Houdková, and P. Jiříček
J. Appl. Phys., 133,
035301, (2023)
- Papier régulier
|
⋄ Exploiting extraordinary topological optical forces at bound states in the continuum
Haoye Qin, Yuzhi Shi, Zengping Su , Guodan Wei, Zhanshan Wang, Xinbin Cheng, Ai Qun Liu, Patrice Genevet, Qinghua Song
Sci. Adv., 8,
eade7556, (2022)
- Papier régulier
|
⋄ Spin-decoupling of vertical cavity surface-emitting lasers with complete phase modulation using on-chip integrated Jones matrix metasurfaces
Peinan Ni, Pan Fu, Pei-Pei Chen, Chen Xu, YiYang Xie, Patrice Genevet
Nat. Commun, 13,
7795, (2022)
- Papier régulier
|
⋄ Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in Vertical GaN-on-GaN Schottky Barrier Diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Yvon Cordier and Dominique Planson
Micro and Nanostructures, 172,
207433, (2022)
- Papier régulier
|
⋄ Fabrication, and DC and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes
Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger
JVST B, 41,
0122022, (2022)
- Papier régulier
|
⋄ Interplay of Purcell effect and extraction efficiency in CsPbBr3 quantum dots coupled to Mie resonators
Ruihua He, Max Meunier, Zhaogang Dong, Hongbing Cai, Weibo Gao, Jesus Zuniga-Perez and Xiaogang Liu
Nanoscale Adv., 15,
1652, (2022)
- Papier régulier
|
⋄ Enhanced Sm spin projection in GdxSm1−xN
J. D. Miller, J. F. McNulty, B. J. Ruck, M. Al Khalfioui, S. Vézian, M. Suzuki, H. Osawa, N. Kawamura, and H. J. Trodahl
Phys. Rev. B, 106,
174432, (2022)
- Papier régulier
|
⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth
M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès
Crystals, 12,
1605, (2022)
- Papier régulier
|
⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson,
F. Semond, G. Feuillet, and C. Cornet
J. Appl. Phys., 132,
165102, (2022)
- Papier régulier
|
⋄ Ultra-broadband photoconductivity in twisted graphene heterostructures with large responsivity
H. Agarwal, K. Nowakowski, A. Forrer, A. Principi, R. Bertini, S. Batlle-Porro, A. Reserbat-Plantey, P. Prasad, L. Vistoli, K. Watanabe, T. Taniguchi, A. Bachtold, G. Scalari, R. Krishna Kumar, F. H. L. Koppens
Nat. Photonics, 1,
1, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser
H. Souissi, M. Gromovyi, T. Gueye, C. Brimont, L. Doyennette, D.D Solnyshkov, G. Malpuech, E. Cambril, S. Bouchoule, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, and T. Guillet
Phys. Rev. Applied, 18,
044029, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’Dohi, Heré Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Microelectronics J, 128,
105575, (2022)
- Papier régulier
|
⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593,
126779, (2022)
- Papier régulier
|
⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE
Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing
Cryst. Growth Des., 22,
5206, (2022)
- Papier régulier
|
⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells
R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 106,
035429, (2022)
- Papier régulier
|
⋄ Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
B. Orfao; G. Di Gioia; B. G. Vasallo; S. Pérez; J. Mateos; Y. Roelens; E. Frayssinet; Y. Cordier; M. Zaknoune; T. González
J. Appl. Phys., 132,
044502, (2022)
- Papier régulier
|
⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil,
J. Appl. Phys., 132,
035302, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Optimal Purification of a Spin Ensemble by Quantum-Algorithmic Feedback
Daniel M. Jackson, Urs Haeusler, Leon Zaporski, Jonathan H. Bodey, Noah Shofer, Edmund Clarke, Maxime Hugues, Mete Atatüre, Claire Le Gall, and Dorian A. Gangloff
Phys. Rev. X , 12,
031014, (2022)
- Papier régulier
|
⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55,
355107, (2022)
- Papier régulier
|
⋄ Low-loss GaN-on-insulator platform for integrated photonics
M. GROMOVYI, M. EL KURDI, X. CHECOURY, E. HERTH,F. TABATABA-VAKILI, N. BHAT, A. COURVILLE, F. SEMOND, AND P. BOUCAUD
Opt. Express, 30,
20737, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature
A. Jollivet, P. Quach, M. Tchernycheva, R. Ferreira, E. Di Russo, L. Rigutti, B. Vinter, N. le Biavan, D. Lefebvre, M. Hugues, J. M. Chauveau, and F. H. Julien
Phys. Rev. B, 105,
195143, (2022)
- Papier régulier
|
⋄ Space and Time Modulations of Light with Metasurfaces: Recent Progress and Future Prospects
Elena Mikheeva, Christina Kyrou, Fouad Bentata, Samira Khadir, Sébastien Cueff, and Patrice Genevet
ACS Photonics, -,
-, (2022)
- Papier invité
|
⋄ Vectorial metasurface holography
Qinghua Song, Xingsi Liu, Cheng-Wei Qiu, and Patrice Genevet
Appl. Phys. Rev., 9,
011311 , (2022)
- Papier invité
|
⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks
Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47,
1521, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ The low temperature limit of the excitonic Mott density in GaN: an experimental reassessment
Léo Mallet-Dida, Pierre Disseix, François Réveret, François Médard, Blandine Alloing, Jesús Zúñiga-Pérez and Joël Leymarie
New J. Phys., 24,
033031, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Porous Nitride LEDs
Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva
ACS Photonics, 9,
1256, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/Sapphire template
Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub and Philippe Ferrandis
J. Appl. Phys., 131,
124501, (2022)
- Papier régulier
|
⋄ Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos, T. González
Sensors, 22,
1515, (2022)
- Papier régulier
|
⋄ Micro Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications
Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
AIP. Adv, 12,
025126, (2022)
- Papier régulier
|
⋄ Up to 300 K lasing with GeSn-On-Insulator microdisk resonators
A. Bjelajac, M. Gromovyi, E. Sakat, B. Wang, G. Patriarche, N. Pauc, V. Calvo, P. Boucaud, F. Boeuf, A. Chelnokov, V. Reboud, M. Frauenrath, J.-M. Hartmann, and M. El Kurdi
Opt. Express, 30,
3954, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN
Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Materials, 15,
8602, (2022)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188,
108210, (2022)
- Papier régulier
|
⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material
M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,
140-145, (2022)
- Article de conférence
|
⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes
Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano,
Phys. Stat. Sol. A, 219,
2200055, (2022)
- Papier régulier
|
⋄ Susceptibility synthesis of arbitrary shaped metasurfaces
N. Lebbe, S. Lanteri, S. Y. Golla, and P. Genevet
Phys. Rev. B, 106,
035110, (2022)
- Papier régulier
|
⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy
B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva
Nanotechnology, 34,
245602, (2022)
- Papier régulier
|
⋄ Designing SiC Based CMUT Structures: An Original Approach and Related Materials Issues
M. Portail, S. Chenot, M. Ghorbanzadeh-Bariran, R. Khazaka, L. Nguyen, D. Alquier and J.F. Michaud
Mat. Sci. For., 1062,
94-98, (2022)
- Article de conférence
|
⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride
M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,
84-88, (2022)
- Article de conférence
|
⋄ Inverse design of nanophotonics devices and materials
PR Wiecha, AY Petrov, P Genevet, A Bogdanov
Photonics and Nanostructures, 52,
101084, (2022)
- Papier régulier
|
⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi,
J. Phys. D: Appl. Phys., 55,
355107, (2022)
- Papier régulier
|
⋄ Coulomb blockade: Towards charge control of self-assembled GaN quantum dots at room temperature
C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck
Appl. Phys. Lett., 120,
012105, (2022)
- Papier régulier
|
⋄ Influence of dynamic morphological modifications of atom probe specimens on the intensity of their photoluminescence spectra
E. M. Weikum, P. Dalapati, G. Beainy, J. M. Chauveau, M. Hugues, D. Lefebvre, J. Houard, A. Vella, and L. Rigutti
JOSA B, 40,
1633, (2022)
- Papier régulier
|
⋄ Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations
Harpreet Kaur, Rajesh Sharma, T. Laurent, J. Torres, P. Nouvel, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.-P. Faurie, B. Beaumont
Appl. Phys. A, 128,
144, (2022)
- Papier régulier
|
⋄ A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers
P. Shanmugam, L. Iglesias, M. Portail, I. Dufour, D. Certon, D. Alquier, J.F. Michaud
Mat. Sci. For., 1062,
593-597, (2022)
- Article de conférence
|
⋄ Getting topological photonics out of the laboratory
Matricardi, C., Small, C., Persechini, L., Zhen, B., Redondo, A.B., Szameit, A. and P Genevet,
Nat. Commun, 13,
2249, (2022)
- Papier invité
|
⋄ A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
P. Quach, A. Jollivet, A. Babichev, N. Isac, M. Morassi, A. Lemaitre, P. A. Yunin, E. Frayssinet, P. de Mierry, M. Jeannin, A. Bousseksou, R. Colombelli, M. Tchernycheva, Y. Cordier, and F. H. Julien
Appl. Phys. Lett., 120,
171103, (2022)
- Papier régulier
|
⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier
Mat. Sci. For., 1062,
482-486, (2022)
- Article de conférence
|
⋄ Metasurface-enhanced light detection and ranging technology
Renato Juliano Martins, Emil Marinov, M. Aziz Ben Youssef, Christina Kyrou, Mathilde Joubert, Constance Colmagro, Valentin Gâté, Colette Turbil, Pierre-Marie Coulon, Daniel Turover, Samira Khadir, Massimo Giudici, Charalambos Klitis, Marc Sorel & Patrice Genevet
Nat. Commun, 13,
5724 , (2022)
- Papier régulier
|
⋄ Les métasurfaces optiques pour les lidars à large champ et à haute cadence d’imagerie
RJ Martins, E Marinov, M. Aziz Ben Youssef, C Kyrou, and P Genevet
Photoniques, ,
41-45, (2022)
- ...
|
⋄ Metasurface for complete measurement of polarization Bell state
Zhanjie Gao, Zengping Su, Qinghua Song, Patrice Genevet and Konstantin E. Dorfman
Nanophotonics, --,
0593, (2022)
- Papier régulier
|
⋄ Oxygen Isotope Variations in Mg-rich Olivines from Type I Chondrules in Carbonaceous Chondrites
G. Libourel, K. Nagashima, M. Portail, A.N. Krot
Geochim. Cosmochim. Acta, 319,
73-93, (2022)
- Papier régulier
|
⋄ Aberration-corrected large-scale hybrid metalenses
R Sawant, D Andrén, RJ Martins, S Khadir, R Verre, M Käll, & P Genevet
Optica, 8(11),
1405-1411, (2021)
- Papier régulier
|
⋄ Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy
M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche,J. Zúñiga-Pérez
Superlattices Microstruct., 150,
106801, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells
M.Montes Bajo, J.Tamayo-Arriola, N.Le Biavan, E.Martínez Castellano, D.Lefebvre, M.Hugues, J.-M.Chauveau, A.Hierro
Appl. Surf. Sci., 567,
150816, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GeSnOI mid-infrared laser technology
B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, M. El Kurdi
Light Sci Appl, 10,
232, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck
Phys. Rev. Applied, 16,
054040, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Stability of the threshold voltage in fluorine-implanted normally‑off AlN/GaN HEMTs co‑integrated with commercial normally‑on GaN HEMT technology
Florent ALBANY, François LECOURT, Ewa WALASIAK, Nicolas DEFRANCE, Arnaud CURUTCHET, Hassan MAHER, Yvon CORDIER, Nathalie LABAT, Nathalie MALBERT
Microelectronics Reliabilty, 126,
114291, (2021)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Witnessing quantum correlations in a nuclear ensemble via an electron spin qubit
Dorian A. Gangloff, Leon Zaporski, Jonathan H. Bodey, Clara Bachorz, Daniel M. Jackson, Gabriel
´Ethier-Majcher, Constantin Lang, Edmund Clarke, Maxime Hugues, Claire Le Gall, and Mete Atature
Nat. Phys., 17,
1247, (2021)
- Papier régulier
|
⋄ Plasmonic topological metasurface by encircling an exceptional point
Q. Song, M. Odeh, J. Zúñiga-Pérez, B. Kanté, and P. Genevet
Science, 373,
1133-1137, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Optimization of metasurfaces under geometrical uncertainty using statistical learning
M. M. R. Elsawy, M. Binois, R. Duvigneau, S. Lanteri and P.Genevet
Opt. Express, 29,
29887, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Epitaxial Zn3N2 thin films by molecular beam epitaxy:Structural, electrical and optical properties
P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, and J. Zúñiga-Pérez
J. Appl. Phys., 130,
065104, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Reconstruction of multidimensional nonlinear polarization response of Pancharatnam-Berry metasurfaces
Z. Gao, P.Genevet, G. Li, and K. E. Dorfman
Phys. Rev. B, 104,
054303, (2021)
- Papier régulier
|
⋄ Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization
D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, et al.
J. Appl. Phys., 130 (2),
025704, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution
N. Al Taradeh, E. Frayssinet, C. Rodriguez, F. Morancho, C. Sonneville, L.-V. Phung, A. Soltani, F. Tendille, Y. Cordier, H. Maher
Energies, 12,
4241, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Multiobjective statistical learning optimization of RGB metalens
M. MR Elsawy, A. Gourdin, M. Binois, R. Duvigneau, D. Felbacq, S. Khadir, P.Genevet, S. Lanteri
ACS Photonics, 8, 8,
2498–2508, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Whispering-gallery mode InGaN microdisks on GaN substrates
H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29,
21280, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Evidence of Piezoelectric Potential and Screening Effect in Single Highly Doped ZnO: Ga and ZnO: Al Nanowires by Advanced Scanning Probe Microscopy
O. Synhaivskyi, D. Albertini, P. Gaffuri, J.-M. Chauveau, V. Consonni, B. Gautier, G. Bremond
J. Phys. Chem. C, 125,
15373, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12,
3631, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires
K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0,
0, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications
Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon, Mathieu Koudia, Elie Assaf, Antoine Ronda, Paola Castrucci, Maurizio De Crescenzi, Holger Vach, and Mathieu Abel
ACS Appl. Nano Mater., 4,
4462, (2021)
- Papier régulier
|
⋄ Nanophotonics for light detection and ranging technology
I. Kim, R.J. Martins, J. Jang, T. Badloe, S. Khadir, H.Y. Jung, H. Kim, J. Kim, P. Genevet, J. Rho
Nat. Nanotechnol., ,
, (2021)
- Papier invité
|
⋄ Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry
O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, and R. Schmidt-Grund
Phys. Rev. Research , 3,
013246, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Microstructure of epitaxial Mg3N2 thin films grown by MBE
P. John, P. Vennéguès, H. Rotella, C. Deparis, C. Lichtensteiger, and J. Zúñiga-Pérez
J. Appl. Phys., 129,
095303, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Polarization-insensitive 3D conformal-skin metasurface cloak
He-Xiu Xu, Guangwei Hu, Yanzhao Wang, Chaohui Wang, Mingzhao Wang, Shaojie Wang, Yongjun Huang, Patrice Genevet, , Wei Huang & Cheng-Wei Qiu
Light Sci Appl, 10,
75, (2021)
- Papier régulier
|
⋄ Scattering by lossy anisotropic scatterers: A modal approach
N Kossowski, Parry Y Chen, QJ Wang, P Genevet, Yonatan Sivan
J. Appl. Phys., 129,
113104, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ DUV LEDs based on AlGaN Quantum Dots
Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686,
116860T, (2021)
- Article de conférence - invité
Article en ligne (HAL) : cliquez ici...
|
⋄ AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, Hideto Miyake and Farid Medjdoub
Electronics, 10,
635, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Quantum sensing of a coherent single spin excitation in a nuclear ensemble
D. M. Jackson, D. A. Gangloff, J. H. Bodey, L. Zaporski, C. Bachorz, E. Clarke, M. Hugues, C. Le Gall and M. Atatüre
Nat. Phys., 17,
585, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ On‐Chip Generation of Structured Light Based on Metasurface Optoelectronic Integration
Qiu‐Hua Wang, Pei‐Nan Ni, Yi‐Yang Xie, Qiang Kan, Pei‐Pei Chen, Pan Fu, Jun Deng, Tai‐Lai Jin, Hong‐Da Chen, Ho Wai Howard Lee, Chen Xu and Patrice Genevet
Laser Photonics Rev., 15,3,
2000385, (2021)
- Papier régulier
|
⋄ Etching of m-plane Zn(Mg)O epitaxial films and its impact on surface leakage currents
Borislav Hinkov, Hanh T Hoang, Maxime Hugues, Jean-Michel Chauveau and Gottfried Strasser
Semicond. Sci. Tech., 36,
035023, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
Phys. Rev. B, 103,
045308, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Bandwidth-unlimited polarization-maintaining metasurfaces
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet
Sci. Adv., 7(5),
eabe1112, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Terahertz Intersubband Electroluminescence from Nonpolar m-Plane ZnO Quantum Cascade Structures
B. Meng, B. Hinkov, N. Le Biavan, H.T. Hoang, D. Lefebvre, M. Hugues, D. Stark, M. Franckié, A. Torres-Pardo, J. Tamayo-Arriola, M. M. Bajo, A. Hierro, G. Strasser, J. Faist*, and J.-M. Chauveau*
ACS Photonics, 8,
343–349, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metasurface Optical Characterization Using Quadriwave Lateral Shearing Interferometry
S. Khadir, D. Andrén, R. Verre, Q. Song, S. Monneret, P. Genevet, M. Käll, and G. Baffou
ACS Photonics, 8,2,
603–613, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Dynamic phase manipulation of vertical-cavity surface-emitting lasers via on-chip integration of microfluidic channels
Zhuangzhuang Zhao, Yiyang Xie, Guanzhong Pan, Peinan Ni, Qiuhua Wang, Yibo Dong, Liangchen Hu, Jie Sun, Hongda Chen, Chen Xu, and Patrice Genevet
Opt. Express, 29,
1481, (2021)
- Papier régulier
|
⋄ Backward Phase-Matched Second-Harmonic Generation from Stacked Metasurfaces
T. Stolt, J. Kim, S. Héron, A. Vesala, Y. Yang, J. Mun, M. Kim, M. J. Huttunen, R. Czaplicki, M. Kauranen, J. Rho, and P. Genevet
Phys. Rev. Lett., 126,
033901, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO
N. Temahuki, F. Jomard, A. Lusson, I. Stenger, S. Hassani, J. Chevallier, J.M. Chauveau, C. Morhain and J. Barjon
Appl. Phys. Lett., 118,
102106, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters
P. Dalapati, G. Beainy, E. Di Russo, I. Blum, J. Houard, S. Moldovan, A. Vella, F. Vurpillot, N. Le Biavan, M. Hugues, J.M. Chauveau, and L. Rigutti
Phys. Rev. Applied, 15,
024014, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Reconfigurable Flat Optics with Programmable Reflection Amplitude Using Lithography-Free Phase-Change Materials Ultra Thin Films
S. Cueff, A. Taute, A. Bourgade, J. Lumeau, S. Monfray, Q. Song, P. Genevet, B. Devif, X. Letartre, L. Berguiga
Adv. Opt. Mater., 9,
2001291, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Proton Energy Loss in GaN
Jean-Yves Duboz,* Julie Zucchi, Eric Frayssinet, Sébastien Chenot, Maxime Hugues,
Jean-Claude Grini, and Joël Hérault
Phys. Stat. Sol. B, ,
2100167, (2021)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Magnetoresistance of epitaxial GdN films
T. Maity, H. J. Trodahl, S. Granville, S. Vézian, F. Natali, and B. J. Ruck
J. Appl. Phys., 128,
213901, (2020)
- Papier régulier
|
⋄ Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength
C. Brimont, L. Doyennette, G. Kreyder, F. Réveret, P. Disseix, F. Médard, J. Leymarie, E. Cambril, S. Bouchoule, M. Gromovyi, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, and T. Guillet
Phys. Rev. Applied, 14,
054060, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe
E. Di Russo, P. Dalapati, J. Houard, L. Venturi, I. Blum, S. Moldovan, N. Le Biavan, D. Lefebvre, M. Hugues, J.-M. Chauveau, D. Blavette, B. Deconihout, A. Vella, F. Vurpillot, and L. Rigutti
Nano Lett., 20,
8733, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
P. Ruterana, M. Morales, N. Chery, T.H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano, and B. Gil
J. Appl. Phys., 128,
223102, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ New barrier layer design for the fabrication of GaN-MIS-HEMT Normally-off transistor
F. Cozette, B. Hassan, C. Rodriguez, E. Frayssinet, R. Comyn, F. Lecourt, N. Defrance, N. Labat, F. Boone, A. Soltani, A. Jaouad, Y. Cordier, H. Maher
Semicond. Sci. Tech., 36,
034002, (2020)
- Papier régulier
|
⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36,
024001, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Paper Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity
L. Abou-Hamdan, S. Hamyeh, A. Iskandar, R. Tauk, J. Brault, M. Tabbal, P.M. Adam, M. Kazan
Nanotechnology, 32,
115703, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate
B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover
Sci Rep., 10,
18919, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping
Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet
Appl. Phys. Express., 13,
115504, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots
J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil
Crystals, 10,
1097, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Reflectivity and Photoreflectivity Spectra of Structures with Quantum Wells Based on ZnO
A.M. Klyuev, N.G. Filosofov, A. Yu Serov, V.F. Agekyan, C. Morhain, V.P. Kochereshko
Phys. Solid State, 62(11),
2012-2015, (2020)
- Papier régulier
|
⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters
T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie,
N. Nahas, Y. Cordier
J. Cryst. Growth, 552,
125911, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide bandgap oxide materials
J. Borgersen, L. Vines, Y. K. Frodason, A. Kuznetsov,
H. von Wenckstern, M Grundmann, M. Allen, J. Zúñiga-Pérez and
K. M. Johansen
J. Phys. Cond. Mat., 32,
415704, (2020)
- Papier régulier
|
⋄ Full InGaN red light emitting diodes
A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A.M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J.C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta
J. Appl. Phys., 128,
135704, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Revealing topological phase in Pancharatnam–Berry metasurfaces using mesoscopic electrodynamics
Z Gao, S. Golla, R. Sawant, V. Osipov, G. Briere, S. Vezian, B. Damilano, P. Genevet and K. E. Dorfman
Nanophotonics, 9(16),
4711, (2020)
- Papier régulier
|
⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers
F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117,
121103, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien
Nanotechnology, 32,
015705, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region
A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.M. Hartmann, M. El Kurdi
ACS Photonics, 7,
2713, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Numerical Optimization Methods for Metasurfaces
M.M.R. Elsawy, S. Lanteri, R. Duvigneau, J.A. Fan, P. Genevet
Laser Photonics Rev., 2020,
1900445, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Independent phase modulation for quadruplex polarization channels enabled by chirality-assisted geometric-phase metasurfaces
Yueyi Yuan, Kuang Zhang, Badreddine Ratni, Qinghua Song, Xumin Ding, Qun Wu, Shah Nawaz Burokur & Patrice Genevet
Nat. Commun, 11,
4186, (2020)
- Papier régulier
|
⋄ Nonlocality Induced Cherenkov Threshold
Hu, H., Lin, X., Zhang, J., Liu, D., Genevet, P., Zhang, B., Luo, Y.
Laser Photonics Rev., 2020,
2000149 , (2020)
- Papier régulier
|
⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45,
4276, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials
L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras
J. Appl. Phys., 128,
085703, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies
M. Bah, D. Valente, M. Lesecq, N. Defrance, M. Garcia Barros, J-C. De Jaeger, E. Frayssinet, R. Comyn, T.H. Ngo, D. Alquier, Y. Cordier
Sci Rep., 10,
14166, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy
J. Houard, A. Normand, E. Di Russo, C. Bacchi, P. Dalapati, G. Beainy, S. Moldovan, G. da Costa, F. Delaroche, C. Vaudolon, J.M. Chauveau, Maxime Hugues, D. Blavette, B. Déconihout, A. Vella, F. Vurpillot, L. Rigutti
Rev. Sci. Instrum., 91,
083704, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications
F. Giannazzo, E. Schilirò, R. Lo Nigro, P. Prystawko, Y. Cordier
Nitride Semiconductor Tech., ,
397, (2020)
- Livres et chapitres de livres
|
⋄ InGaN islands and thin films grown on epitaxial graphene
C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot
Nanotechnology, 31,
405601, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon
M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon
Mat. Sci. For., 1004,
132, (2020)
- Article de conférence
|
⋄ Photoassisted chemical smoothing of AlGaN surface after laser lift-off
Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, and Baoping Zhang
JVST B, 38,
042207, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Nickel Oxide-Based Heterostructures with Large band Offsets
R. Karsthof, H. von Wenckstem, J. Zúñiga-Pérez, C. Deparis and M. Grundmann.
Phys. Stat. Sol. B, 257,
1900639, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet
Nanophotonics, 10(1),
697, (2020)
- Papier régulier
|
⋄ Why is it difficult to grow spontaneous ZnO nanowires using molecular beam epitaxy?
V. Sallet, C. Deparis, G. Patriarche, C. Sartel, G. Amiri, J.-M. Chauveau, C. Morhain and J. Zúñiga-Pérez
Nanotechnology, 31,
385601, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Lasing up to 380 K in a sublimated GaN nanowire
S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi
Appl. Phys. Lett., 116,
223101, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template
Hongjian Li, Haojun Zhang, Panpan Li, Matthew Wong, Yi Chao Chow, S. Pinna, J. Klamkin, P. Demierry, J. Speck, S. Nakamura, S. Denbaars
J. Phys. Photonics, 2,3,
031003, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11,
2651, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper
Nanotechnology, 31,
465706, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters
G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3,
4054, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Crystalline magnesium nitride (Mg3N2): From epitaxial growth to fundamental physical properties
P. John, H. Rotella, C. Deparis, G. Monge, F. Georgi, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Phys. Rev. Materials, 4,
054601, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses
E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,7,
1900760, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Charge transfers and charged defects in WSe2/graphene-SiC interfaces
Y. J. Dappe, Y. Almadori, M. T. Dau, C. Vergnaud, M. Jamet, C. Paillet, T. Journot, B. Hyot, P. Pochet, B. Grévin
Nanotechnology, 31,
255709, (2020)
- Papier régulier
|
⋄ Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grutzmacher, M. El Kurdi
Nat. Photonics, 14,
375, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10,
5642, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology
M. Abou Daher, M. Lesecq, P. Tilmant, N. Defrance, M. Rousseau, Y. Cordier, J.C. De Jaeger, and J.G. Tartarin
JVST B, 38,
033201, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Blandine Alloing, Mathieu Leroux, Seoung-Hwan Park, Julien Brault and Yong-Hoon Cho
Nanoscale Adv., 2,
1449-1455, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Luminescence behavior of semipolar (10-11) InGaN/GaN “bow-tie” structures on patterned Si substrates
J. Bruckbauer, C. Trager-Cowan, B. Hourahine, A. Winkelmann, P. Vennéguès, A. Ipsen, X. Yu, X. Zhao, M.J. Wallace, P.R. Edwards, G. Naresh-Kumar, M. Hocker, S. Bauer, R. Müller, J. Bai , K. Thonke, T. Wang, R.W. Martin
J. Appl. Phys., 127,
035705, (2020)
- Papier régulier
|
⋄ Mid-Infrared Grayscale Metasurface Holograms
K. Wu, N. Kossowski, H. Qiu , H. Wang, Q.J. Wang and P. Genevet
Applied Sciences, 10,
552 , (2020)
- Papier régulier
|
⋄ Metasurface-integrated vertical cavity surface-emitting lasers for programmable directional lasing emissions
Y.Y. Xie, P.N. Ni, Q.H. Wang, Q. Kan, G. Briere, P.P. Chen, Z.Z. Zhao, A. Delga, H.R. Ren, H.D. Chen, C. Xu and P. Genevet
Nat. Nanotechnol., 15,
125–130, (2020)
- Papier régulier
|
⋄ Long-lifetime coherence in a quantum emitter induced by a metasurface
E. Lassalle, P. Lalanne, S. Aljunid, P. Genevet, B. Stout, T. Durt, and D. Wilkowski
Phys. Rev. A, 101,
013837, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography
L. Amichi, I. Mouton, V. Boureau , E. Di Russo, P. Vennéguès, P. De Mierry, A. Grenier, P.H. Jouneau, C. Bougerol and D. Cooper
Nanotechnology, 31,
045702, (2020)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metasurface orbital angular momentum holography
H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet
Nat. Commun, 10,
2986, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ 2 W/mm power density of an AlGaN/GaN HEMT grown on Free-Standing GaN Substrate at 40 GHz, Semiconductor Science and Technology
M.R. Irekti, M. Lesecq, N. Defrance, E. Okada, E. Frayssinet, Y. Cordier, J.G. Tartarin, J.C. De Jaeger
Semicond. Sci. Tech., 34,
12LT01, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5,
52, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses
E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,
1900760, (2019)
- Papier régulier
|
⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz
J. Appl. Phys., 126,
224503, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers
P. Henning , P. Horenburg, H. Bremers, U. Rossow, F. Tendille, P. Vennégués , P. de Mierry, J. Zúñiga-Pérez , and A. Hangleiter
Appl. Phys. Lett., 115,
202103, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Impact of tensile strain on low Sn content GeSn lasing
D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. Kurdi, D. Grützmacher, D. Buca
Sci Rep., 9,
259, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Voigt Exceptional Points in an Anisotropic ZnO-Based Planar Microcavity:Square-Root Topology, Polarization Vortices, and Circularity
S. Richter, H. G. Zirnstein, J. Zúñiga-Pérez, E. Krüger, C. Deparis, L. Trefflich, C. Sturm, B. Rosenow, M. Grundmann, and R. Schmidt-Grund
Phys. Rev. Lett., 123,
227401, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates
A. Jollivet, M. Tchernycheva, V. Trinité, E. Frayssinet, P. De Mierry, Y. Cordier and F.H. Julien
Appl. Phys. Lett., 115,
261103, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9,
18095, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates
M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars
ACS Appl. Mater. Interfaces, 11, 50,
47106-47111, (2019)
- Papier régulier
|
⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure
X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li
Phys. Stat. Sol. A, 216(24),
1900655, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics
S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi
ACS Photonics, 6,12,
3321-3330, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Theoretical estimation of tunnel currents in hetero-junctions: the special case of nitride tunnel junctions
J.Y. Duboz and B. Vinter
J. Appl. Phys., 126,
174501, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Al5+αSi5+δN12, a new Nitride compound
R. Dagher, L. Lymperakis, V. Delaye, L. Largeau, A. Michon, J. Brault & P. Vennéguès
Sci Rep., 9,
15907, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet
J. Cryst. Growth, 526,
125235, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Global optimization of metasurface designs using statistical learning methods
M.M.R. Elsawy, S. Lanteri, R. Duvigneau, G. Brière, M. Sabry Mohamed and P. Genevet
Sci Rep., 9,
17918 , (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126,
205701, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Observation of Intersubband Absorption in ZnO Coupled Quantum Wells
B. Meng, J. Tamayo-Arriola, N. Le Biavan, M. Montes Bajo, A. Torres-Pardo, M. Hugues, D. Lefebvre, A. Hierro, J.-M. Chauveau, J. Faist
Phys. Rev. Applied, 054007,
12, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
F. Giannazzo, G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, F. Roccaforte, F. Iucolano, S. Ravesi, E. Frayssinet, A. Michon, Y. Cordier
ACS Appl. Electron. Mater., 1,
2342, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ High lateral breakdown voltage in thin channel AlGaN/GaN high electron mobility transistors on AlN/sapphire templates
I. Abid, R. Kabouche, C. Bougerol, J. Pernot, C. Masante, R. Comyn, Y. Cordier, F. Medjdoub
Micromachines , 10,
690, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Remote epitaxy using graphene enables growth of stress-free GaN
T Journot, H Okuno, N Mollard, A Michon, R Dagher, P Gergaud, J Dijon, A V Kolobov and B Hyot
Nanotechnology, 30,
505603, (2019)
- Papier régulier
|
⋄ Optical Phase Transition in Semiconductor Quantum Metamaterials
A. Hierro, M. Montes Bajo, M. Ferraro, J. Tamayo-Arriola, N. Le Biavan, M. Hugues, J. M. Ulloa, M. Giudici, J.-M. Chauveau, P. Genevet
Phys. Rev. Lett., 123 ,
117401 , (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. Chow, P. Li, J. Kearns, A. A. Taylor, P. De Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars
Opt. Express, 27,
24154, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metasurfaces Orbital Angular Momentum Holography
H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet
Nat. Commun, 10,
2986, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
E. Schilirò, F. Giannazzo, C. Bongiorno, S. Di Franco, G. Greco, F. Roccaforte, P. Prystawko, P. Kruszewski, M. Leszczyński, M. Krysko, A. Michon, Y. Cordier, I. Cora, B. Pecz, H. Gargouri, R. Lo Nigro
Mat Sci Semicon Proc, 97,
35-39, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Hybrid MoS2-gap-mode metasurface photodetectors
P. Ni, A. de Luna Bugallo, X. Yang, V.M. Arellano Arreola, M. Flores Salazar, E. Strupiechonski, B. Alloing, C. Shan, P. Genevet
J. Phys. D: Appl. Phys., 52,
374001, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Kapitza thermal resistance characterization of epitaxial graphene-SiC(0001) interface
G. Hamaoui, R. Dagher, Y. Cordier, A. Michon, S. Potiron, M. Chirtoc, and N. Horny
Appl. Phys. Lett., 114,
1601, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures
F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova
Nano Lett., 19,
4911, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition
V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, and J.-Y. Duboz
AIP. Adv, 9,
055101, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2-Gap-Mode Metasurfaces
P. Ni, A. de Luna Bugallo, V.M. Arellano Arreola, M.F. Salazar, E. Strupiechonski, V. Brändli, R. Sawant, B. Alloing and P. Genevet
ACS Photonics, 6, 7,
1594-1601, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Enhanced Second-Harmonic Generation in a Single Microwire Based on Localized Surface Plasmon
J. Li, H. Zhu, Z. Chen, Y. Huang, H. Zheng, Z. Tang, X. Gui, S. Wang, Z. Tang, P. Ni, and P. Genevet
Phys. Stat. Sol. B, 256,
1900075, (2019)
- Papier régulier
|
⋄ Quantum interface of an electron and a nuclear ensemble
D. A. Gangloff, G. Éthier-Majcher, C. Lang, E. V. Denning, J. H. Bodey, D. M. Jackson, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Science, 364 (6435),
62-66, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces
G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14),
1801271, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits
F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27,
11800, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Role of In in hydrogenation of N-related complexes in GaInNAs
T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux, I.R.Sellers, B.Wang
ACS Appl. Electron. Mater., 1,
461, (2019)
- Papier régulier
|
⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,
045007, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Competition between horizontal and vertical polariton lasing in planar microcavities
O. Jamadi, F. Réveret, D. Solnyshkov, P. Disseix, J. Leymarie, L. Mallet-Dida, C. Brimont, T. Guillet, X. Lafosse, S. Bouchoule, F. Semond, M. Leroux, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. B, 99,
085304, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Excitons in ZnO Quantum Wells
M.N. Bataev, N.G. Filosofov, A. Yu. Serov, V.F. Agekyan, C. Morhain, V.P. Kochereshko
Phys. Solid State, 60,
2628–2633, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Silicene Nanostructures Grown on Graphene Covered SiC (0001) Substrate
I. Berbezier , A. Michon , P. Castrucci , M. Scarselli , M. Salvato , M. Scagliotti and M. De Crescenzi
Int. J. Nanosci., 18,
1940039, (2019)
- Papier régulier
|
⋄ Optimization and uncertainty quantification of gradient index metasurfaces
N. Schmitt, N. Georg, G. Brière, D. Loukrezis, S. Héron, S. Lanteri, C. Klitis, M. Sorel, U. Rômer, H. De Gersem, S. Vézian, and P. Genevet
Opt. Mater. Express, 9,
892-910, (2019)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Mitigating Chromatic Dispersion with Hybrid Optical Metasurfaces
R. Sawant, P. Bhumkar, A.Y. Zhu, P. Ni, F. Capasso, and P. Genevet
Adv. Mater., 31,
1805555, (2019)
- Papier régulier
|
⋄ GaN Schottky diodes for proton beam monitoring
J.-Y. Duboz, J. Zucchi, E. Frayssinet, P. Chalbet, S. Chenot, M. Hugues, J.-C. Grini, R. Trimaud, M. Vidal and J. Hérault
Biomed. Phys. Eng. Express, 5,
025015, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Room Temperature Electrically Driven Ultraviolet Plasmonic Lasers
X. Yang, P.-N Ni, P.-T. Jing, L.-G. Zhang, R.-M. Ma, C.-X. Shan, D.-Z. Shen, and P. Genevet
Adv. Opt. Mater., 7,
1801681, (2019)
- Papier régulier
|
⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon
Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz
J. Cryst. Growth, 507,
220, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition
M. Vermillac, H. Fneich, J. Turlier, M. Cabie, C. Kucera, D. Borschneck, F. Peters, P. Vennéguès, T. Neisius, S. Chaussedent, D. R Neuville, A. Mehdi, J. Ballato, and W. Blanc
Opt. Mater., 87,
74-79, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression
R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet
J. Appl. Phys., 125,
035703, (2019)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
A. Jollivet, B. Hinkov, S. Pirotta, H. Hoang, S. Derelle, J. Jaeck, M. Tchernycheva, R. Colombelli, A. Bousseksou, M. Hugues, N. Le Biavan, J. Tamayo-Arriola, M. Montes Bajo, L. Rigutti, A. Hierro, G. Strasser, J.M. Chauveau, and F. H. Julien
Appl. Phys. Lett., 113,
251104, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Edge-emitting polariton laser and amplifier based on a ZnO waveguide
O. Jamadi, F. reveret, P. Disseix, F. Medard, J. Leymarie, A. Moreau, D. Solnyshkov, C. Deparis, M. Leroux, E. Cambril, S. Bouchoule, J. Zúñiga-Pérez, and G. Malpuech
Light Sci Appl, 7,
82, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Impact-induced chemical fractionation as inferred from hypervelocity impact experiments with silicate projectiles and metallic targets
C. Ganino, G. Libourel, A. Nakamura, S. Jacomet, O. Tottereau, P. Michel
Meteorit Planet Sci., 2306-2326,
53, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Outfitting Next Generation Displays with Optical Metasurfaces
I. Kim, G. Yoon, J. Jang, P. Genevet, K. Tae Nam, and J. Rho
ACS Photonics, 5 (10),
3876–3895, (2018)
- Papier invité
|
⋄ Well-ordered ZnO nanowires with controllable inclination on semipolar ZnO surfaces by chemical bath deposition
T. Cossuet, H. Roussel, J.M. Chauveau, O. Chaix-Pluchery, J.L. Thomassin, E. Appert and Vincent Consonni
Nanotechnology, 29,
475601, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Ga-doping of nonpolar m-plane ZnMgO with high Mg contents
J.Tamayo-Arriola, M.Montes Bajo, N. Le Biavan, D.Lefebvre, A.Kurtz, J.M.Ulloa, M.Hugues, J.M.Chauveau, A.Hierro
J. Alloys and Comp., 766,
436, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499,
40, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Solving thermal issues in tensile-strained Ge microdisks
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, P. Boucaud
Opt. Express, 26,
28376, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metasurfaces: Physics and Applications
F. Ding, P. Genevet and S.I. Bozhevolnyi
Applied Sciences, 8,
1727, (2018)
- Papier invité
|
⋄ Enhanced excitonic emission efficiency in porous GaN
T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies
Sci Rep., 8,
15767, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel
IEEE Photonic Tech L, 30,
1567, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Intentional polarity conversion of AlN epitaxial layers by oxygen
N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès & M. Albrecht
Sci Rep., 8,
14111, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence
M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro
Phys. Rev. Applied, 10,
034022, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Modelling of free-form conformal metasurfaces
K. Wu, P. Coquet, Q. J. Wang and P. Genevet
Nat. Commun, 9,
3494, (2018)
- Papier régulier
|
⋄ Germanium microlasers on metallic pedestals
A Elbaz, M Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, C Baudot, F. Boeuf, P. Boucaud
APL Photonics, 3(10),
106102, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Screening and engineering of colour centres in diamond
T. Lühman,N. Raatz, R. John, M. Lesik, J. Rödiger, M. Portail, D. Wildanger, F. Kleibler, K. Nordlund, A. Zaitsev, J-F. Roch, A. Tallaire, J. Meijer and S. Pezzagna
J. Phys. D: Appl. Phys., 51 (48),
483002, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography
E. Di Russo, F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J.F. Carlin, N. Grandjean, J.M. Chauveau, M. Hugues, I. Blum, W. Lefebvre, F. Vurpillot, D. Blavette, and L. Rigutti
J. Phys. Chem. C, 122,
16704, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Evidence of exciton complexes in non polar ZnO/(Zn,Mg)O A-plane quantum well
M.J. Mohammed Ali, J.M.Chauveau, T.Bretagnon
Superlattices Microstruct., 120,
410, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Multisubband Plasmons in Doped ZnO Quantum Wells
M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J. M. Ulloa, N. Le Biavan, R. Peretti, F. H. Julien, J. Faist, J.M. Chauveau, and A. Hierro
Phys. Rev. Applied, 10,
024005, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Chondrules as direct thermochemical sensors of solar protoplanetary disk gas
G. Libourel, M. Portail
Science_Advances, 4(7),
eaar3321, (2018)
- Papier régulier
|
⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5,
3643, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure
N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès
J. Appl. Phys., 123,
215701, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations
R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon
Cryst. Eng. Comm., 20,
3702-3710, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Coherence of a dynamically decoupled quantum-dot hole spin
L. Huthmacher, R. Stockill, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Phys. Rev. B, 97,
241413, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range
J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33,
075007, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J.-B. Rodriguez, E. Tournié, R. Bernard, A. Létoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, and C. Cornet
Phys. Rev. Materials, 2,
060401(R), (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ γ′ precipitates with a twin orientation relationship to their hosting grainin a γ-γ′ nickel-based superalloy
S. Vernier, J.-M. Franchet, C. Dumont, P. Vennéguès, N. Bozzolo
Scr. Mater., 153,
10, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE
S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215,
1700640, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Loss analysis in nitride deep ultraviolet planar cavity
Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang
J. Nanophotonics, 12,
043504, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching
D. Allioux, A. Belarouci, D. Hudson, E. Magi, M. Sinobad, G. Beaudin, A. Michon, N. Singh, R. Orobtchouk, and C. Grillet
Photonics Res., 6, 5,
B74-B81, (2018)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Time-resolved photoluminescence investigation of (Mg,Zn)O alloy growth on a non-polar plane
M.J. Mohammed Ali, J.M. Chauveau, T. Bretagnon
Superlattices Microstruct., 116,
105, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN
C.-M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, N. Gaston, and F. Natali
J. Appl. Phys., 123,
115106, (2018)
- Papier régulier
|
⋄ Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
A. Hierro, M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J.M. Ulloa, N. Le Biavan, R. Peretti, F. Julien, J. Faist, J.-M. Chauveau
Proc. SPIE, 10533,
105331K, (2018)
- Article de conférence - invité
|
⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)
S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil
Superlattices Microstruct., 114,
161, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Electron transport in heavily doped GdN
T. Maity, H.J. Trodahl, F. Natali, and B.J. Ruck and S. Vézian
Phys. Rev. Materials, 2,
014405, (2018)
- Papier régulier
|
⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers
J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 924,
318-321, (2018)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate
T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5),
1700399, (2018)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs
H. Yacoub, T. Zweipfennig, H. Kalisch, A. Vescan, A. Dadgar,
Matthias Wieneke, Jürgen Bläsing, A. Strittmatter, Stephanie Rennesson,
and Fabrice Semond
Phys. Stat. Sol. A, 2018,
1700638, (2018)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Gallium nitride MEMS resonators: how residual stress impacts design and performances
C. Morelle, D. Théron, J. Derluyn, S. Degroote, M. Germain, V. Zhang, L. Buchaillot, B. Grimbert, P. Tilmant, F. Vaurette, I. Roch-Jeune, V. Brändli, V. Avramovic, E. Okada, M.Faucher
IIEEE DTIP, 24,
371–377, (2018)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett., 111,
231903, (2017)
- Papier régulier
|
⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation
B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25,
33243, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate
B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 255(5),
1700392, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Laser damage of free-standing nanometer membranes
Y. Morimoto, I. Roland, S. Rennesson, F. Semond, P. Boucaud and P. Baum
J. Appl. Phys., 122,
215303, (2017)
- Papier régulier
|
⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer
E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 214,
1600419, (2017)
- Article de conférence
|
⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate
R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 215(9),
1700642, (2017)
- Papier régulier
|
⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors
F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 215(10),
1700653, (2017)
- Papier régulier
|
⋄ Hybrid multiple diffraction in semipolar wurtzite materials: (01-12)-oriented ZnMgO/ZnO heterostructures as an illustration
E. de Prado, M. C. Martinez-Tomas, C. Deparis, V. Munoz-Sanjosé, and J. Zúñiga-Pérez
J. Appl. Cryst., 50,
1165, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polarAlN epitaxial layers
N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht
J. Appl. Phys., 122,
155303, (2017)
- Papier régulier
|
⋄ ZnCdO: Status after 20 years of research
J. Zúñiga-Pérez
Mat Sci Semicon Proc, 69,
36, (2017)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates
M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez
J. Appl. Phys., 122,
105108, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger
Phys. Stat. Sol. A, 10,
1700637, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc., 268,3,
305-312, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red
T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil
Superlattices Microstruct., 113,
129-134, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111,
131103, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref
Current Applied Physics, 17,
1601-1608, (2017)
- Papier régulier
|
⋄ Improving a solid-state qubit through an engineered mesoscopic environment
G. Éthier-Majcher, D. Gangloff, R. Stockill, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Phys. Rev. Lett., 119,
130503, (2017)
- Papier régulier
|
⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates
H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. de Mierry, S. Nakamura, J. S. Speck, S. P. DenBaars
ACS Appl. Mater. Interfaces, 9,
36417, (2017)
- Papier régulier
|
⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire
M. Khoury, H. Li, L. Y. Kuritzky, A.J. Mughal, P. de Mierry, S. Nakamura, J.S. Speck, and S. P. DenBaars
Appl. Phys. Express., 10,
106501, (2017)
- Papier régulier
|
⋄ Interface dipole and band bending in the hybrid p - n heterojunction Mo S 2 / GaN ( 0001 )
H. Henck, Z. Ben Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, F. Sirotti, F. Bertran, P. Le Fevre, S. Berciaud, A. T. Charlie Johnson, E. Lhuilli
Phys. Rev. B, 96,
115312, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures
T.H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry
J. Appl. Phys., 122,
063103, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates
A. Bengoechea-Encabo, S. Albert, M Müller, M–Y. Xie, P Veit, F. Bertram, M. A. Sanchez-Garcia, J. Zúñiga-Pérez, P. de Mierry, J. Christen
Nanotechnology, 28,
365704, (2017)
- Papier régulier
|
⋄ Les Métasurfaces, des composants optiques fonctionnels ultra-minces
P. Genevet, P. Chavel, N. Bonod
Photoniques, 87,
25, (2017)
- Papier invité
|
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission
S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122,
085706, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures
E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
Appl. Phys. Lett., 111,
032108, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Phase tuned entangled state generation between distant spin Qubits
R. Stockill, M. J. Stanley, L. Huthmacher, E. Clarke, M. Hugues, A. J. Miller, C. Matthiesen, C. Le Gall, and M. Atatüre
Phys. Rev. Lett., 119,
010503, (2017)
- Papier régulier
|
⋄ Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation
T. Kaldewey, S. Lüker, A. V. Kuhlmann, S. R. Valentin, J.M. Chauveau, A. Ludwig, A. D. Wieck, D. E. Reiter, T. Kuhn, and R. J. Warburton
Phys. Rev. B, 95,
241306(R), (2017)
- Papier régulier
|
⋄ Use of thulium-doped LaF3 nanoparticles to lower the phonon energy of the thulium's environment in silica-based optical fibres
M. Vermillac, H. Fneich, J.-F. Lupi, J.-B. Tissot, C. Kucera, P. Vennéguès, A. Mehdi, D. R. Neuville, J. Ballato, W. Blanc
Opt. Mater., 68,
24 - 28, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Freestanding dielectric nanohole array metasurface for mid-infrared wavelength applications
J. R. Ong, H. S. Chu, V. H. Chen, A. Y. Zhu, and P. Genevet
Opt. Lett., 42,
2639, (2017)
- Papier régulier
|
⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs
C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers
RSC Adv., 7,
25353, (2017)
- Papier régulier
|
⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut
R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon
Mat. Sci. For., 897,
731 - 734, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ A combined growth process for state-of-the-art GaN on silicon
G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4,
1600449, (2017)
- Papier régulier
|
⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate
G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4,
1600450, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films
J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2,
165, (2017)
- Article de conférence
|
⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing
M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault.
J. Cryst. Growth, 461,
10-15, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Non-metal to metal transition in n-type ZnO single crystal materials
S. Brochen, G. Feuillet, J.L. Santailler, R. Obrecht, M. Lafossas, P. Ferret, J.M. Chauveau,and J. Pernot
J. Appl. Phys., 121,
095704, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system
T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
Appl. Phys. Lett., 110,
131102, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy
F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances, 2,
189, (2017)
- Article de conférence
|
⋄ Intersubband absorption in m-plane ZnO/ZnMgO MQWs
M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, M. Tchernycheva, F. H. Julien, R. Peretti, J. Faist, M. Hugues, J. M. Chauveau, A. Hierro
Proc. SPIE, 10105,
101050O-1, (2017)
- Article de conférence - invité
|
⋄ Internal quantum efficiency and Auger recombination in green\, yellow and red InGaN-based light emitters grown along the polar direction
T.H. Ngo, B. Gil, B. Damilano, K. Lekhal, P. de Mierry
Superlattices Microstruct., 103,
245, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Exceptional points in anisotropic photonic structures: from non-Hermitian physics to possible device applications
M. Grundmann, S. Richter, T. Michalsky, C. Sturm, J. Zúñiga-Pérez, and R. Schmidt-Grund
Proc. SPIE, 10105,
0277-786X, (2017)
- Papier invité
|
⋄ Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber
M. Vermillac, J.-F. Lupi,F. Peters,M. Cabié, P. Vennéguès,C. Kucera, T. Neisius, J. Ballato, W. Blanc
J. Am. Ceram. Soc., 100(5),
1814-1819, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes
M. Grundmann, C. Sturm, C. Kranert, S. Richter, R. Schmidt-Grund, C. Deparis, J. Zúñiga-Pérez
Phys. Stat. Sol. RRL, 11,
1600295, (2017)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes
R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail
Appl. Phys. Lett., 110,
081602, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Recent improvements of flexible GaN-based HEMT technology
S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, Y. Cordier, B. Damilano, G. Tabares Jimenez, A. Ebongue, and V. Hoel
Phys. Stat. Sol. A, 214(4),
1600484, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Excitonic complexes in GaN/(Al,Ga)N quantum dots
D. Elmaghraoui, M. Triki, S. Jaziri, G. Muñoz-Matutano, M. Leroux, J. Martinez-Pastor
J. Phys. Cond. Mat., 29,
105302, (2017)
- Papier régulier
|
⋄ Anomalous DC and RF Behavior of Virgin AlGaN/AlN/GaN HEMTs
H. Sánchez Martín, O. García, S. Perez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. Gonzalez, J. Mateos, I.Iniguez de la Torre
Semicond. Sci. Tech., 32,
035011, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Efficient second harmonic generation in low-loss planar GaN waveguides
M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25,
23035-23044, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Deep-level spectroscopy in metal–insulator–semiconductor structures
A. Kurtz, E. Muñoz, J.M. Chauveau and A. Hierro
J. Phys. D: Appl. Phys., 50,
065104 , (2017)
- Papier régulier
|
⋄ Anisotropic Surface Plasmon Polariton Generation Using Bimodal V‑Antenna Based Metastructures
D. Wintz, A. Ambrosio, A. Y. Zhu, P. Genevet, and F. Capasso
ACS Photonics, 4 (1),
22-27, (2017)
- Papier régulier
|
⋄ Recent advances in planar optics: from plasmonic to dielectric metasurfaces
P. Genevet, F. Capasso, F. Aieta, M. Khorasaninejad, and R. Devlin
Optica, 4 (1),
139-152, (2017)
- Papier régulier
|
⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates
R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski,
T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4),
1600436, (2017)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Ion-induced interdiffusion of surface GaN quantum dots
C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig
Nuclear Instruments and Methods in Physics Research B, 409,
107, (2017)
- Article de conférence
|
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation
B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies
J. Cryst. Growth, 477,
262, (2017)
- Papier régulier
|
⋄ Inkjet‐Printed Nanocavities on a Photonic Crystal Template
F. SF Brossard, V. Pecunia, A. J. Ramsay, J. P. Griffiths, M. Hugues, H. Sirringhaus
Adv. Mater., 29(47),
1704425, (2017)
- Papier régulier
|
⋄ Polarity in GaN and ZnO: Theory, measurements, growth and devices
J. Zúñiga-Pérez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S. Fernandez-Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M. R. Wagner, J. S. Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, and G. Feuillet
Appl. Phys. Rev., 3,
041303, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN quantum dot polarity determination by X-ray photoelectron diffraction
O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka
Appl. Surf. Sci., 389,
1156, (2016)
- Papier régulier
|
⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet
J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis,
M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont,
and T. Guillet
Appl. Phys. Lett., 109,
231101, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth
B. Alloing et J. Zúñiga-Pérez
Mat Sci Semicon Proc, 55,
51, (2016)
- Papier invité
|
⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction
R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail
J. Appl. Phys., 120,
185306, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN
J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16,
6454, (2016)
- Papier régulier
|
⋄ The 2016 oxide electronic materials and oxide interfaces roadmap
M. Lorenz, M. S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F. K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, J. Zúñiga-Pérez, D. J. Rogers, F.
J. Phys. D: Appl. Phys., 49,
433001, (2016)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates
M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez
J. Phys. D: Appl. Phys., 49,
475104, (2016)
- Papier régulier
|
⋄ Ultraviolet light emitting diodes using III-N quantum dots
J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55,
95, (2016)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Graphene integration with nitride semiconductors for high power and high frequency electronics
F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 214,
1600460, (2016)
- Papier régulier
|
⋄ High temperature electrical transport study of Si-doped AlN
S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux,
B. Damilano, J. Brault
Superlattices Microstruct., 98,
253, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx
F. Réveret, L. Bignet, W. Zhigang, X. Lafosse, G. Patriarche, P. Disseix F. Médard, M. Mihailovic, J. Leymarie, J. Zúñiga-Pérez and S. Bouchoule
J. Appl. Phys., 120,
093107, (2016)
- Papier régulier
|
⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6,
34191, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si
P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher
J. Micromech. Microeng., 26,
105015, (2016)
- Papier régulier
|
⋄ Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates
A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, and M. Grundmann
AIP Adv, 6,
95013, (2016)
- Papier régulier
|
⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality
F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109,
082101, (2016)
- Papier régulier
|
⋄ Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions
D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, T. Bauch, A. Michon, A. De Candia, P. Lucignano, F. Lombardi, F. Tafuri, and A. Tagliacozzo
Phys. Rev. B, 94,
054525, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy
X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua
Phys. Stat. Sol. B, 253(11),
2225-2229, (2016)
- Papier régulier
|
⋄ Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder
J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, and M. Leroux
Appl. Phys. Lett., 108,
251904, (2016)
- Papier régulier
|
⋄ Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy
L. Wang, S. Guillemin, J.M. Chauveau, V. Sallet, F. Jomard, R. Brenier, V. Consonni, G. Brémond
Phys. Stat. Sol. C, 13,
576, (2016)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Anisotropic optical properties of a homoepitaxial (Zn, Mg) O/ZnO quantum well grown on a‐plane ZnO substrate
M. Ali, J. Mohammed, J.M. Chauveau, T. Bretagnon
Phys. Stat. Sol. C, 13,
598, (2016)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Superconductivity in the ferromagnetic semiconductor samarium nitride
E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck
Phys. Rev. B, 94,
024106, (2016)
- Papier régulier
|
⋄ Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette, F. Vurpillot, E. Giraud, J.F. Carlin, R. Butté, N. Grandjean, N. Gogneau, L. Largeau, F. H. Julien, M. Tchernycheva, J.M. Chauveau and M. Hugues
Microsc. Microanal., 22,
650 - 651, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
M.D. Neumann, N. Esser, J.M. Chauveau, R. Goldhahn and M. Feneberg
Appl. Phys. Lett., 108,
221105, (2016)
- Papier régulier
|
⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450,
22, (2016)
- Papier régulier
|
⋄ Polarity Control in Group-III Nitrides beyond Pragmatism
S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo,
A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Phys. Rev. Applied, 5,
054004, (2016)
- Papier régulier
|
⋄ First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor
S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel
IEEE Electron Device Letters, 37,
553, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes
G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L, 28,
1661, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC
B. Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, J. R. Huntzinger, A. Tiberj, A.-A. Zahab, T. Bauch, P. Lucignano, A. Tagliacozzo, F. Lombardi and F. Tafuri
J. Supercond. Nov. Magn., 29,
1145, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Traditional and emerging materials for optical metasurfaces
A. Y. Zhu, A. I. Kuznetsov, B. Luk'yanchuk, N. Engheta, and P. Genevet
Nanophotonics, 6(2),
452-471, (2016)
- Papier invité
|
⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For., 858,
137-142, (2016)
- Article de conférence - invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes
Mat. Sci. For., 858,
249-252, (2016)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators
I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express, 24,
9602, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55,
05FG06, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry
Jpn. J. Appl. Phys., 55,
05FG10, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Broadband mode conversion via gradient index metamaterials
H.X. Wang, Y.D. Xu, P. Genevet, J.-H. Jiang, and H.Y. Chen
Sci Rep., 6,
24529 , (2016)
- Papier régulier
|
⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS
R. Comyn, Y. Cordier, S. Chenot, A. Jaouad, H. Maher, V. Aimez
Phys. Stat. Sol. A, 213,
917-924, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO
O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez
Phys. Rev. B, 93,
115205, (2016)
- Papier régulier
|
⋄ Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen
A. Kurtz, A. Hierro, M. Lopez-Ponce, G. Tabares and J.M. Chauveau
Semicond. Sci. Tech., 31,
035010, (2016)
- Papier régulier
|
⋄ Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy
L. Wang, J.M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C Sartel, G. Brémond
Appl. Phys. Lett., 108,
132103, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
A. Hierro, G. Tabares, M. Lopez-Ponce, J. M. Ulloa, A. Kurtz, E. Muñoz, V. Marín-Borrás, V. Muñoz-Sanjose, J.M. Chauveau
Proc. SPIE, 9749,
97490W, (2016)
- Article de conférence - invité
|
⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16,
1863, (2016)
- Papier régulier
|
⋄ Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating
H. Spisser, A. Grimault-Jacquin, N. Zerounian, A. Aassime, L. Cao, F. Boone, H. Maher, Y. Cordier, F. Aniel
Choisir un journal..., 37,
243 - 257, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)”
E. Wimmer, E. Celasco, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. d'Angelo, F. Sirotti, M. Rocca, A. Catellani, G. Galli, L. Douillard, F. Semond, V.Yu. Aristov, P. Soukiassian
Surf Sci Lett, 644,
L170 - L171, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations
M. Grundmann, and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253,
351-360, (2016)
- Papier régulier
|
⋄ Deep-UV nitride-on-silicon microdisk lasers
J. Sellés, C. Brimont, G. Cassabois, P. Valvin, T. Guillet, I. Roland, Y. Zeng, X. Checoury,
P. Boucaud, M. Mexis, F. Semond & B. Gayral
Sci Rep., 6,
21650, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire
P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253,
105-111, (2016)
- Papier régulier
|
⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett., 108,
011608, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy
P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9,
015502, (2016)
- Papier régulier
|
⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433,
165-171, (2016)
- Papier régulier
|
⋄ Measurement of bound states in the continuum by a detector embedded in a photonic crystal
R. Gansch, S. Kalchmair, P. Genevet, T. Zederbauer, H. Detz, A. M Andrews, W. Schrenk, F. Capasso, M. Lončar and G. Strasser
Light Sci Appl, 5,
e16147, (2016)
- Papier régulier
|
⋄ Evidence of multimicrometric coherent γ' precipitates in a hot-forged γ –γ' nickel-based superalloy
M.-A. Charpagne, P. Vennéguès, T. Billot, J.-M. Franchet and N. Bozzolo
J. Microsc., 263,
106, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth, 434,
25, (2016)
- Papier régulier
|
⋄ Controlling electromagnetic fields at boundaries of arbitrary geometries
J.Y.H. Teo, L. J. Wong, C. Molardi, and P. Genevet
Phys. Rev. A, 94,
023820, (2016)
- Papier régulier
|
⋄ Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation
Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud
ACS Photonics, 3,
1240, (2016)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity
R. Hahe, C. Brimont, P. Valvin, T. Guillet, F. Li, M. Leroux, J. Zúñiga-Pérez, X. Lafosse, G. Patriarche, and S. Bouchoule
Phys. Rev. B, 92,
235308, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate
R. Khazaka, E. Bahette, M. Portail, D. Alquier, J.-F. Michaud
Mater. Lett., 160,
28-30, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ AlGaN/GaN High Electron Mobility Transistors grown by Ammonia Source Molecular Beam Epitaxy
Y. Cordier
Gallium Nitride (GaN): Physics, Devices, and Technology, F.Medjdoub, CRC Press,
45-60, (2015)
- Livres et chapitres de livres
|
⋄ Nanoscale calibration of n-type ZnO staircase structures by scanning capacitancemicroscopy
L. Wang, J. Laurent, J.M. Chauveau, V. Sallet, F. Jomard, and G. Brémond
Appl. Phys. Lett., 107,
192101, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier and F. Schopfer
Nat. Nanotechnol., 10,
965–971, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Yellow–red emission from (Ga,In)N heterostructures
B. Damilano and B. Gil
J. Phys. D: Appl. Phys., 48,
403001, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal and P. De Mierry
Appl. Phys. Lett., 107,
122103, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition
R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud
Acta Mater., 98,
336, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Transport of indirect excitons in ZnO quantum wells
Y.Y. Kuznetsova, F. Fedichkin, P. Andreakou, E.V. Calman, L.V. Butov, P.Lefebvre, T. Bretagnon, T. Guillet, M. Vladimirova, C. Morhain,and J.M. Chauveau
Opt. Lett., 40,
3667, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire
P. Vennéguès, F. Tendille and P. De Mierry
J. Phys. D: Appl. Phys., 48,
325103, (2015)
- Papier régulier
|
⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source
B. Damilano, J. Brault and J. Massies
J. Appl. Phys., 118,
024304, (2015)
- Papier régulier
|
⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate
B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212,
2297–2301, (2015)
- Papier régulier
|
⋄ Native point defect energies, densities, and electrostatic repulsion across (Mg,Zn)O alloys
G.M. Foster, J. Perkins, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
Phys. Stat. Sol. A, 212,
1448, (2015)
- Papier invité
|
⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118,
024303, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Comparative studies of n-type 4H-SiC: Raman vs Photoluminescence spectroscopy
P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet
Mat. Sci. For., 821-823,
237-240, (2015)
- Article de conférence
|
⋄ Optical characterization of p-type 4H-SiC epilayers
G. Liaugaudas, D. Dargis, P. Kawasnicki, H. Peyre, R. Arvinte, S. Juillaguet, M. Zielinski, K. Jarašiūnas
Mat. Sci. For., 821-823,
249-252, (2015)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate
F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry
Semicond. Sci. Tech., 30,
065001, (2015)
- Papier régulier
|
⋄ Impact of Mg content on native point defects in MgxZn1-xO (0 <= x <= 0.56)
J. Perkins, G.M. Foster, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
APL Materials, 3,
062801, (2015)
- Papier régulier
|
⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation
M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers
IEEE PVSC, 42,
1-3, (2015)
- Article de conférence
|
⋄ Raman investigation of heavily Al doped 4H-SiC layers grown by CVD
P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski,L. Konczewicz, S. Contreras, J. Camassel and S. Juillaguet
Mat. Sci. For., 806,
51, (2015)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties
P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252,
1096, (2015)
- Papier régulier
|
⋄ Al(Ga)N/GaN High Electron Mobility Transistors on Silicon
Y. Cordier
Phys. Stat. Sol. A, 212,
1049-1058, (2015)
- Papier invité
|
⋄ Epitaxial challenges of GaN on silicon
F. Semond
MRS Bulletin, vol 40,
412-417, (2015)
- Papier invité
|
⋄ Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS
R. Comyn, Y. Cordier, V. Aimez, and H. Maher
Phys. Stat. Sol. A, 212,
1145-1152, (2015)
- Article de conférence
|
⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
Appl. Phys. Lett., 106,
142101, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate
P. Altuntas, F. Lecourt, A. Cutivet, N. Defrance, E. Okada, M. Lesecq, S. Rennesson, A. Agboton, Y. Cordier, V. Hoel, and J.C. De Jaeger
IEEE Electron. Device Lett., 36,
303, (2015)
- Papier régulier
|
⋄ Improved performance in GaInNAs solar cells by hydrogen passivation
M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui
J. Appl. Phys., 106,
141904, (2015)
- Papier régulier
|
⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun, 6,
6806, (2015)
- Papier régulier
|
⋄ Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P.M. Gammon, M.R. Jennings, M. Thomas, C.A. Fisher, Y.K. Sharma, M. Placidi, M. Chmielowska, S. Chenot, M. Porti, M. Nafría and Y. Cordier
Nanotechnology, 26,
115203, (2015)
- Papier régulier
|
⋄ Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
T.H. Ngo, D. Rosales, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. de Mierry
Proc. SPIE, 9363,
93630K, (2015)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy
M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès
J. Cryst. Growth, 419,
88-93, (2015)
- Papier régulier
|
⋄ Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells
G. Tabares, A. Hierro, M. Lopez-Ponce, E. Muñoz, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett., 106,
061114, (2015)
- Papier régulier
|
⋄ Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon
Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral,
C. Brimont, T. Guillet, M. Mexis, F. Semond, and P. Boucaud
Appl. Phys. Lett., 106,
081105, (2015)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363,
93630Z, (2015)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
A. Hierro, G. Tabares, M. Lopez-Ponce, E. Munoz, A Kurtz, B Vinter, J.M. Chauveau
Proc. SPIE, 9364,
93641H, (2015)
- Article de conférence - invité
|
⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers
R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823,
1003, (2015)
- Article de conférence
|
⋄ Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques
G. Liaugaudas, D. Dargis, P. Kwasnicki, R. Arvinte, M. Zielinski, K. Jarašiūnas
J. Phys. D: Appl. Phys., 48,
025103, (2015)
- Papier régulier
|
⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers
R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For., 821-823,
149, (2015)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Highly resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106,
022401, (2015)
- Papier régulier
|
⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect
R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud
Mat. Sci. For., 821-823,
978, (2015)
- Article de conférence
|
⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers
R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre
Mat. Sci. For., 45,
806, (2015)
- Article de conférence
|
⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers
Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A.
Petrou
J. Appl. Phys., 117,
045705, (2015)
- Papier régulier
|
⋄ 3C-SiC: from electronic to MEMS devices
J.F. Michaud, M. Portail and D. Alquier
Advanced Silicon Carbide Devices and Processing , Edited by E. Saddow and F. La Via,
Intech, ISBN 978-953-51-2168-8, (2015)
- Livres et chapitres de livres
Article en ligne (HAL) : cliquez ici...
|
⋄ 3C-SiC : new interest for MEMS devices
J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier
Mat. Sci. For., 3,
806, (2015)
- Article de conférence
|
⋄ Gallium Nitride as an electromechanical material
M. Rais-Zadeh, V. Gokhale, A. Ansari, M. Faucher, D. Theron, Y. Cordier, L. Buchaillot
IEEE J.MEMS, 23,
1252-1271, (2014)
- Papier régulier
|
⋄ The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures
D. Rosales, T.H. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattice Microst, 76,
9-15, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Low loss GaN waveguides for visible light on Si Substrates
M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public., 9,
14050, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment
M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157,
404, (2014)
- Papier régulier
|
⋄ On the Correlation Between Kink Effect and Effective Mobility in InAlN/GaN HEMTs
P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquiere, J. De Jaeger, E. Frayssinet, Y. Cordier
Proc. of the 9th European Microwave Integrated Circuit Conference, ,
88-91, (2014)
- Article de conférence
|
⋄ Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications
S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
Mat. Sci. For., 806,
81-87, (2014)
- Article de conférence
|
⋄ Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices
O. Arenas, É. Al Alam, A. Thevenot, Y. Cordier, A. Jaouad, V. Aimez, H. Maher, R. Arès and F. Boone
IEE JEDS, 2,
145-148, (2014)
- Papier régulier
|
⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth, 404,
177-183, (2014)
- Papier régulier
|
⋄ Selective area growth of GaN nanostructures: A key to produce high-quality (11-20) a-plane pseudo-substrates
S. Albert, A. Bengoechea-Encabo, J. Zúñiga-Pérez, P. de Mierry, P. Val, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 105,
091902, (2014)
- Papier régulier
|
⋄ Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates
N. Gogneau, A. Ben Gouider Trabelsi, M. Silly, M. Ridene, M. Portail, A. Michon, M. Oueslati, R. Belkhou, F. Sirotti, A. Ouerghi
Nanotechnology, Science and Applications, 85,
7, (2014)
- Papier régulier
|
⋄ Magnetic properties of Gd doped GaN
S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.W. Becker, D. Rogalla, and D. Reuter
Phys. Stat. Sol. B, 251,
1673-1684, (2014)
- Papier régulier
|
⋄ Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy
R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier
J. Appl. Phys., 054304,
116, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29,
084001, (2014)
- Papier invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Magnetoresistance of disordered graphene: From low to high temperatures
B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Phys. Rev. B, 90,
035423, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers
J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett., 104,
241113, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, P. Boucaud
Appl. Phys. Lett., 105,
11104, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones
M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116,
034308, (2014)
- Papier régulier
|
⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells
M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers
IEEE PVSC, 40th PSVC,
0669-0673, (2014)
- Article de conférence
|
⋄ Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics
D. Néel, I. Roland, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, S. Semond, P. Boucaud
Adv. Nat. Sci: Nanosci. Nanotechnol., 5,
023001, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Valence-band orbital character of CdO: A synchrotron-radiation photoelectron spectroscopy and density functional theory study
J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B, 89,
165305, (2014)
- Papier régulier
|
⋄ Rotated domain network in graphene on cubic-SiC(001)
A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov
Nanotechnology, 25,
135605, (2014)
- Papier régulier
|
⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties
P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys., 115,
153504, (2014)
- Papier régulier
|
⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films
Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398,
23, (2014)
- Papier régulier
|
⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter
B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G,
8986, (2014)
- Article de conférence - invité
|
⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104,
071912, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties
S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano
Semicond. Sci. Tech., 29,
035016, (2014)
- Papier régulier
|
⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy
Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau
J. Cryst. Growth, 388,
35, (2014)
- Papier régulier
|
⋄ Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing
B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel,
Phys. Rev. B, 89,
085422, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO
J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D. Hesp, J.M. Kahk, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B, 89,
035203, (2014)
- Papier régulier
|
⋄ Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition
T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G.Ferro, H.B. Weber, M. Krieger
Mat. Sci. For., 778-780,
261, (2014)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986,
89860Z, (2014)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Quantitative determination of compositional profiles using HAADF image simulations
R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa
Phys. Stat. Sol. C, 11,
284, (2014)
- Papier régulier
|
⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers
Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4,
498-501, (2014)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder
W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault
Eur. Phys. J. Appl. Phys., 68,
20102, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN/AlGaN superlattices for p contacts in LEDs
J.Y. Duboz
Semicond. Sci. Tech., 29,
035017, (2014)
- Papier régulier
|
⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications
P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Tech., 29,
115018, (2014)
- Papier régulier
|
⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films
F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404,
146-151, (2014)
- Papier régulier
|
⋄ Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature
A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gruzinskis
Lithuanian Journal of Physics, 54,
58-62, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application
A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A, 211,
1655-1659, (2014)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Selective area growth and charcaterization of GaN nanocolumns, with and without an InGaN insertion, on semipolar (11-22) GaN templates
A. Bengoechea-Encabo, S. Albert, J. Zúñiga-Pérez, P. de Mierry, A. Trampert, F. Barbagini, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 103,
241905, (2013)
- Papier régulier
|
⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates
J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter
Appl. Phys. Lett., 103,
262104, (2013)
- Papier régulier
|
⋄ Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source
C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M. J. Rashid, and F. Semond
Optics Letters, 38,
5059, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Chapter 11: Nitride-based electron devices for high-power/high-frequency applications
Y. Cordier, T. Fujishima, B. Lu, E. Matioli, and T. Palacios
III Nitride Semiconductors and their Modern Devices, 1,
366, (2013)
- Livres et chapitres de livres
|
⋄ Strain evolution in GaN nanowires: from free-surface objects to coalesced templates
M. Hugues, P.A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur, M. Cooke, M. Dineen, A. Di Carlo, D.W.E. Allsopp, and J. Zúñiga-Pérez
J. Appl. Phys., 114,
084307, (2013)
- Papier régulier
|
⋄ Optimization of Al0.29Ga0.71N//GaN High Electron Mobility Transistor heterostructures for high power/frequency performances
S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
IEEE Transactions on Electron Devices, 60,
3105, (2013)
- Papier régulier
|
⋄ Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology
A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, E. Okada, M. Chmielowska, M.R. Ramdani and J.C. De Jaeger
Semicond. Sci. Tech., 28,
094003, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter
B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6,
092105, (2013)
- Papier régulier
|
⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior
D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B, 88,
125437, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Advanced photonic and nanophotonic devices, III-nitride semiconductors and their modern devices, éditeur B. Gil, Oxford University Press
J.Y. Duboz
OUP, 10,
330-365, (2013)
- Livres et chapitres de livres
|
⋄ On the growth of Zn1–xMnxO thin films by plasma-assisted MBE
C. Deparis, C. Morhain, J. Zúñiga-Pérez, J.M. Chauveau, H. Kim-Chauveau, P. Vennéguès, M. Teisseire, B. Vinter
Phys. Stat. Sol. C, 10,
1322, (2013)
- Article de conférence
|
⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods
Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou
Appl. Phys. Lett., 103,
012104, (2013)
- Papier régulier
|
⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano.
Appl. Phys. Lett., 103,
032102, (2013)
- Papier régulier
|
⋄ Plasmon energy from strained GaN quantum wells
M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken
Appl. Phys. Lett., 103,
021901, (2013)
- Papier régulier
|
⋄ Magnetotransport studies of AlGaN/GaN heterostructures with 2 two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination
W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, and Y. Cordier
J. Appl. Phys., 114,
023704, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN doped with beryllium—An effective light converter for white light emitting diodes
H. Teisseyre, M. Bockowski, I. Grzegory, A. Kozanecki, B. Damilano, Y. Zhydachevskii, M. Kunzer, K. Holc, and U.T. Schwarz
Appl. Phys. Lett., 103,
011107, (2013)
- Papier régulier
|
⋄ Thermal Management for High-Power Single-Frequency Tunable Diode-Pumped VECSEL Emitting in the Near- and Mid-IR
M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, A. Garnache
IEEE J Sel Top quantum Electron, 19,
1701108 - 1701108, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Fabrication and characterization of a room-temperature ZnO polariton laser
F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, and J. Zúñiga-Pérez
Appl. Phys. Lett., 102,
191118, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier
J. Appl. Phys., 113,
174501, (2013)
- Papier régulier
|
⋄ Temperature-dependent optical properties of epitaxial CdO thin films determined by spectroscopic ellipsometry and Raman scattering
S.G. Choi, L.M. Gedvilas, S.Y. Hwang, T.J. Kim, Y.D. Kim, J. Zúñiga-Pérez, and V. Munoz-Sanjosé
J. Appl. Phys., 113,
183515, (2013)
- Papier régulier
|
⋄ From excitonic to photonic polariton condensate in a ZnO-based microcavity
F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. Lett., 110,
196406, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission
J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52,
08JG01, (2013)
- Papier régulier
|
⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113,
203501, (2013)
- Papier régulier
|
⋄ Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M.P. Chauvat, P. Ruterana, G. Nataf, P. De Mierry, E. Monroy, and F.H. Julien
J. Appl. Phys., 113,
143109, (2013)
- Papier régulier
|
⋄ Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz
A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, M. Rousseau, M. Chmielowska, M. Ramdani, and J.C. De Jaeger
IEEE Electron Devices Letters, 34,
490, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Terahertz transmission and effective gain measurement of two-dimensional electron gas
R. Sharma, T. Laurent, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Phys. Stat. Sol. A, 210,
1454, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates
N. Defrance, F. Lecourt, Y. Douvry, M. Lesecq, V. Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger
IEEE Transactions on Electron Devices, 60,
1054, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy
R. Oliva, J. Ibañez, L. Artus, R. Cusco, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys., 113,
053514, (2013)
- Papier régulier
|
⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier
Appl. Phys. Lett., 102,
093503, (2013)
- Papier régulier
|
⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates
Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau
Appl. Phys. Express, 6,
042101, (2013)
- Papier régulier
|
⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy
S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A, 210,
480-483, (2013)
- Papier régulier
|
⋄ Room temperature generation of THz radiation in GaN quantum wells structures
A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knapb, Y. Cordier, S. Chenot, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis
Proc. SPIE, 8624,
862409, (2013)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers
M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau
and P Vennéguès
Semicond. Sci. Tech., 28,
035006, (2013)
- Papier régulier
|
⋄ Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons
R. Messina, J.P. Hugonin, J.J. Greffet, F. Marquier, Y. De Wilde, A. Belarouci, L. Frechette, Y. Cordier and P. Ben-Abdallah
Phys. Rev. B, 87,
085421 , (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons
J.H. Buss, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hagele
Appl. Phys. Lett., 103,
092401, (2013)
- Papier régulier
|
⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth, 363,
282, (2013)
- Papier régulier
|
⋄ On the interplay of point defects and Cd in non-polar ZnCdO films
A. Zubiaga, F. Reurings, F. Tuomisto, F. Plazaola, J.A. García, A.Yu. Kuznetsov, W. Egger, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys., 113,
023512, (2013)
- Papier régulier
|
⋄ Temperature dependence of the direct bandgap and transport properties of CdO
S.K. Vasheghani Farahani, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, C.F. McConville, and T.D. Veal
Appl. Phys. Lett., 102,
022102, (2013)
- Papier régulier
|
⋄ Role of magnetic polarons in ferromagnetic GdN
F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87,
035202, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD
A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller,
T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742,
117, (2013)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P. Sangaré, G. Ducournau, B.Grimbert, V. Brändli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
J. Phys. D: Appl. Phys., 113,
034305, (2013)
- ...
Article en ligne (HAL) : cliquez ici...
|
⋄ Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates
T. Bretagnon, L. Beaur, T. Guillet, C. Brimont, M. Gallart, B. Gil, P. Gilliot, C. Morhain
J. Lumin., 136,
355, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors
A. Perez-Tomas, A. Fontserè, S. Sanchez, M.R. Jennings, P.M. Gammon, and Y. Cordier
Appl. Phys. Lett., 102,
023511 , (2013)
- Papier régulier
|
⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy
N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies
J. Appl. Phys., 114,
053505, (2013)
- Papier régulier
|
⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate
J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Microelec. Engineering, 105,
65, (2013)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN-based nano rectifiers for THz detection
P. Sangaré, G. Ducournau, B. Grimbert, V. Brändli, M. Faucher, C. Gaquière
IEEE IRMMW, IRMMW - THz 2012,
1-2, (2012)
- Article de conférence
|
⋄ Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy
E. Gür, G. Tabares, A. Arehart, J.M. Chauveau, A. Hierro, and S.A. Ringel
J. Appl. Phys., 112,
123709, (2012)
- Papier régulier
|
⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate
T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10,
425, (2012)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ On the origin of basal stacking faults in nonpolar wurtzite films epitaxiallygrown on sapphire substrates
P. Vennéguès, J.M. Chauveau, Z. Bougrioua, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 112,
113518, (2012)
- Papier régulier
|
⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
ECS Solid State Letters, 2,
p4, (2012)
- Papier régulier
|
⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 )
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Mat. Sci. Eng. B, 52,
2547-2550, (2012)
- Papier régulier
|
⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance
A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
Semicond. Sci. Tech., 27,
125010, (2012)
- Papier régulier
|
⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates
M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics, 75,
86-92, (2012)
- Papier régulier
|
⋄ Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon
F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux
Superlattice Microst, 52,
541, (2012)
- Papier régulier
|
⋄ Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen
P. Muret, D. Tainoff, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett., 101,
122104, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria,
Nanotechnology, 23,
395204, (2012)
- Papier régulier
|
⋄ Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters
P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson
J. Cryst. Growth, 353,
108, (2012)
- Papier régulier
|
⋄ Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
A. Bengoechea-Encabo, S. Albert, M. A. Sanchez-Garcia, L.L. Lopez, S. Estradé, J.M. Rebled, E. Peiro, G. Nataf, P. de Mierry, J. Zúñiga-Pérez, and E. Calleja
J. Cryst. Growth, 353,
1-4, (2012)
- Papier régulier
|
⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes
P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express, 20,
18707, (2012)
- Papier régulier
|
⋄ Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria
Appl. Phys. Lett., 101,
093505, (2012)
- Papier régulier
|
⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots
J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566,
73, (2012)
- Article de conférence
|
⋄ From strong to weak coupling regime in a single GaN microwire up to room temperature
A. Trichet, F. Médard, J. Zúñiga-Pérez, B. Alloing and M. Richard
New J. Phys., 14,
073004, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Searching for THz Gunn oscillations in GaN planar nanodiodes
A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangare, M. Faucher, B. Grimbert, V. Brändli, G. Ducournau, and C. Gaquière
J. Appl. Phys., 111,
113705, (2012)
- ...
Article en ligne (HAL) : cliquez ici...
|
⋄ Non-linear emission properties of ZnO microcavities
T. Guillet, C. Brimont, P. Valvin, B. Gil, T. Bretagnon, F. Medard, M. Mihailovic, J. Zúñiga-Pérez, F. Semond, S. Bouchoule
Phys. Stat. Sol. C, 9,
1225, (2012)
- Article de conférence - invité
Article en ligne (HAL) : cliquez ici...
|
⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349,
27, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ High quality factor AlN nanocavities embedded in a photonic crystal waveguide
D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M.J. Rashid, F. Semond, J.Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud
Appl. Phys. Lett., 100,
191104, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720,
621, (2012)
- Article de conférence
|
⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)
A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720,
625, (2012)
- Article de conférence
|
⋄ A graphene electron lens
L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken
Appl. Phys. Lett., 100,
153106, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ LO-phonon-assisted polariton lasing in a ZnO-based microcavity
L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet
Phys. Rev. B, 85,
121201, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strainevolution and phase separation
M. Korytov, J.A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.L. Rouvière, and P. Vennégués
J. Appl. Phys., 111,
084309, (2012)
- Papier régulier
|
⋄ Optical investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
L. Béaur, T. Bretagnon, B. Gil, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire and J.M. Chauveau
Phys. Stat. Sol. C, 9,
1320, (2012)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Fabrication and properties of etched GaN nanorods
P. Shields, M. Hugues, J. Zúñiga-Pérez, M. Cooke, M. Dineen, W. Wang, F. Causa, and D. Allsopp
Phys. Stat. Sol. C, 9,
631, (2012)
- Article de conférence
|
⋄ A new approach for AFM cantilever elaboration with 3C-SiC
S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier
Materials Letters , 77,
54, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon
M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys., 111,
053507, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX, 5,
025504, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure
B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz
Phys. Stat. Sol. C, 9,
931, (2012)
- Article de conférence
|
⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV
L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys., 111,
023511, (2012)
- Papier régulier
|
⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib
Phys. Stat. Sol. C, 9,
523-526, (2012)
- Article de conférence
|
⋄ Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process
E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird
Mat. Sci. For., 711,
228-232, (2012)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)
D.H. Rich, O. Moshe, B. Damilano, and J. Massies
Phys. Stat. Sol. C, 9,
1011, (2012)
- Article de conférence
|
⋄ Electromechanical Transconductance Properties of a GaN MEMS Resonator with fully integrated HEMT Transducers
M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, C. Gaquière and D. Théron
JMEMS, 21,
370-378, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, Y. Cordier, and J.C. De Jaeger
Phys. Stat. Sol. C, 9,
1083-1087, (2012)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338,
20, (2012)
- Papier régulier
|
⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition
S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier
Mat. Sci. For., 711,
61, (2012)
- Article de conférence
|
⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers
S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 711,
84, (2012)
- Article de conférence
|
⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si
X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Mat. Sci. For., 711,
154, (2012)
- Article de conférence
|
⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC
J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 711,
179, (2012)
- Article de conférence
|
⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)
A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier,
A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711,
253, (2012)
- Article de conférence
|
⋄ Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
A. Redondo-Cubero , A. Hierro , J.M. Chauveau , K. Lorenz , G. Tabares , N. Franco , E. Alves and E. Muñoz
CrystEngComm, 14,
1637, (2012)
- Papier régulier
|
⋄ High quality factor photonicresonators for nitride quantum dots
T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil,
D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud
Phys. Stat. Sol. B, 249,
449, (2012)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar andsemipolar orientations
P. Vennéguès
Semicond. Sci. Tech., 27,
024004, (2012)
- Papier régulier
|
⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A, 209,
465, (2012)
- Papier régulier
|
⋄ Fabrication and growth of GaN-based micro and nanostructures
B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9,
412-427, (2012)
- Papier invité
|
⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses
D. H. Rich, O. Moshe, B. Damilano and J. Massies
AIP. Proceedings, 1399,
453, (2011)
- Article de conférence
|
⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy
Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau
Appl. Phys. Lett., 99,
261910 , (2011)
- Papier régulier
|
⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D. H. Rich, B. Damilano, and J. Massies
J. Phys. Cond. Mat., 44,
505101, (2011)
- Papier régulier
|
⋄ Hybrid cavity polaritons in a ZnO-perovskite microcavity
G. Lanty, S. Zhang, J.S. Lauret, E. Deleporte, P. Audebert, S. Bouchoule, X. Lafosse, J. Zúñiga-Pérez, F. Semond, D. Lagarde, F. Médard, and J. Leymarie
Phys. Rev. B, 84,
195449, (2011)
- Papier régulier
|
⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain
A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9,
175-178, (2011)
- Article de conférence
|
⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC
X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Nucl. Instr. and Method Phys. Research B, 269,
2020, (2011)
- Papier régulier
|
⋄ Polariton lasing in a hybrid bulk ZnO microcavity
T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 99,
161104, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría
Appl. Phys. Lett., 99,
213504, (2011)
- Papier régulier
|
⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range
P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett., 32,
1561, (2011)
- Papier régulier
|
⋄ Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
L. Béaur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.M. Chauveau
Phys. Rev. B, 84,
165312, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings
Microelectronic Engineering, 88 (10),
3140, (2011)
- Papier régulier
|
⋄ Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition
M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Cryst. Growth, 328,
13, (2011)
- Papier régulier
|
⋄ Nanopendeo coalescence overgrowth of GaN on etched nanorod array
P. Shields, C. Liu, A. Šatka, A. Trampert, J. Zúñiga-Pérez, B. Alloing, D. Haško, F. Uherek, W. Wang, F. Causa, D. Allsopp
Phys. Stat. Sol. C, 8,
2334, (2011)
- Article de conférence
|
⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range
A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110,
084318, (2011)
- Papier régulier
|
⋄ Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap
Appl. Phys. Lett., 99,
082101, (2011)
- Papier régulier
|
⋄ Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
G. Tabares, A. Hierro, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett., 99,
071108, (2011)
- Papier régulier
|
⋄ Voltage controlled terahertz transmission through GaN quantum wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V. Korotyevyev, V. Kochelap
Appl. Phys. Lett., 99,
82101, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection
M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011,
1-5, (2011)
- Article de conférence
|
⋄ Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber
W. Blanc, V. Mauroy, L. Nguyen, S.N.B. Bhaktha, P. Sebbah, B. Pal, B. Dussardier
J. Am. Ceram. Soc., 94,
2315-2318, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Thermal effects in AlGaN/GaN/Si high electron mobility transistors
I. Saidi, Y. Cordier, M. Chmielowska, H. Mejri and H. Maaref
Solid State Electronics, 61,
1-6, (2011)
- Papier régulier
|
⋄ High quality factor of AlN microdisks embedding GaN quantum dot
M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Phys. Stat. Sol. C, 8,
2328, (2011)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Influence of s,p-d and s−p exchange couplings on exciton splitting in Zn1−xMnxO
W. Pacuski,J. Suffczyński, P. Osewski, P. Kossacki, A. Golnik, J.A. Gaj, C. Deparis, C. Morhain, E. Chikoidze, Y. Dumont, D. Ferrand, J. Cibert, T. Dietl
Phys. Rev. B, 84,
35214, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime
L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet
Appl. Phys. Express, 4,
072001, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots
M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Optics Letters, 36,
2203-2205, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ RF Performance of AlGaN/GaN High Electron Mobility Transistors grown on Silicon (110)
D. Marti, C.R. Bolognesi, Y. Cordier, M. Chmielowska, M. Ramdani
Applied Physics Express, 4,
064105, (2011)
- Papier régulier
|
⋄ Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes
R. Charash, H. Kim-Chauveau, A. Vajpeyi, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, J.Y. Duboz, and B. Corbett
Phys. Stat. Sol. C, 8,
2378, (2011)
- Article de conférence
|
⋄ AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud
Appl. Phys. Lett., 98,
261106, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN nanocolumns on sapphire by ammonia-MBE: From self-organizedto site-controlled growth
S. Vézian, B. Alloing and J. Zúñiga-Pérez
J. Cryst. Growth, 323,
326, (2011)
- Article de conférence
|
⋄ Laser emission with excitonic gain in a ZnO planar microcavity
T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 98,
211105 , (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells
J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Morhain, C. Deparis, and B. Vinter
J. Appl. Phys., 109,
102420, (2011)
- Article de conférence - invité
|
⋄ Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy
D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett., 98,
131915, (2011)
- Papier régulier
|
⋄ Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces
E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
J. Appl. Phys., 109,
084511, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett., 98,
141104, (2011)
- Papier régulier
|
⋄ Electron mobility in CdO films
S.K. Vasheghani Farahani, T.D. Veal, P.D.C. King, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
J. Appl. Phys., 109,
073712, (2011)
- Papier régulier
|
⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties
S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109,
053514, (2011)
- Papier régulier
|
⋄ Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates
L. Béaur, T. Bretagnon, C. Brimont, T. Guillet, B. Gil, D. Tainoff, M. Teisseire and J.M. Chauveau
Appl. Phys. Lett., 98,
101913, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Comparison of Fe and Si doping of GaN: An EXAFS and Raman study
M. Katsikini, F. Pinakidoua, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, and T.D. Moustakas
Mat. Sci. Eng. B, 176,
723, (2011)
- Papier régulier
|
⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers
M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf.,
581-584, (2011)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy
E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard
Phys. Stat. Sol. C, 8,
1479-1482, (2011)
- Article de conférence
|
⋄ Efficient blocking of planar defects by prismatic stacking faults in semipolar (1122)-GaN layers on m-sapphire by epitaxial lateral overgrowth
B. Lacroix, M.-P. Chauvat, P. Ruterana, G. Nataf, P. de Mierry
Appl. Phys. Lett., 98,
121916, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments
X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 679-680,
193, (2011)
- Article de conférence
|
⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon
M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For., 679-680,
79, (2011)
- Article de conférence
|
⋄ Growth of GaN based structures on focused ion beam patterned templates
Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.Y. Lo, Y.Y. Hu, A. Ludwig, A.D. Wieck
Phys. Stat. Sol. C, 8,
1516–1519 , (2011)
- Article de conférence
|
⋄ Measurement of Pulsed Current–Voltage Characteristicsof AlGaN/GaN HEMTs from Room Temperature to 15 K
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Acta Phys. Pol. A, 119,
196 - 198, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov and V. Gruzinskis
Acta Physica Polonica A, 119,
107-110, (2011)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates
H. Kim-Chauveau, P. de Mierry, J.M. Chauveau and J.Y. Duboz
J. Cryst. Growth, 316,
30, (2011)
- Papier régulier
|
⋄ Determination of defect content and defect profile in semiconductor heterostructures
A. Zubiaga, J. A. Garcia, F. Plazaola, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Phys.: Conf. Ser., 265,
012004, (2011)
- Article de conférence
|
⋄ Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D.H. Rich, B. Damilano, and J. Massies
Appl. Phys. Lett., 98,
061903, (2011)
- Papier régulier
|
⋄ MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies
M. Lange, C. P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. A, 29,
03A104, (2011)
- Article de conférence
|
⋄ Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
J. Cryst. Growth, 314,
85-91, (2011)
- Papier régulier
|
⋄ Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers
A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla
Phys. Rev. B, 83,
205429, (2011)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Ohmic Contact Resistance dependence on Temperature for GaN devices
A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings
Mat. Sci. For., 679-680,
816-819, (2011)
- Article de conférence
|
⋄ Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime
J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B, 84,
153202, (2011)
- Papier régulier
|
⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett., 98,
011914, (2011)
- Papier régulier
|
⋄ Study of the epitaxial relationships between III-nitrides and M-planesapphire
P. Vennéguès, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 108,
113521, (2010)
- Papier régulier
|
⋄ Epitaxial growth of GdN on silicon substrate using an AlN buffer layer
F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth, 312,
3583, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Blue-green and white color tuning of monolithic light emitting diodes
B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108,
073115, (2010)
- Papier régulier
|
⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97,
171909, (2010)
- Papier régulier
|
⋄ Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111)
A. Ouerghi, R. Belkhou, M. Marangolo, M.G. Silly, S. El Moussaoui, M. Eddrief, L. Travers, M. Portail, F. Sirotti
Appl. Phys. Lett., 97,
161905, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties
A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti
Phys. Rev. B, 82,
125445, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies
J. Appl. Phys., 108,
083510, (2010)
- Papier régulier
|
⋄ Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on r-plane sapphire from 0.74 to 6.45 eV
S.G. Choi, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, A.G. Norman, C.L. Perkins, and D.H. Levi
J. Vac. Sci. Technol. B, 28,
1120, (2010)
- Papier régulier
|
⋄ X-ray detectors based on GaN Schottky diodes
J.Y. Duboz, E. Frayssinet, S. Chenot, J.L. Reverchon, M. Idir
Appl. Phys. Lett., 97,
163504, (2010)
- Papier régulier
|
⋄ Deposited thin SiO2 for gate oxide on n-type and p-type GaN
M. Placidi, A. Constant, A. Fontserè, E. Pausas, I. Cortes, Y. Cordier, N. Mestres, R. Pérez, M.Zabala, J. Millán, P. Godignon and A. Pérez-Tomás
Journal of the Electrochemical Society, 157,
H1008-H1013 , (2010)
- Papier régulier
|
⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19,
2683-2688 , (2010)
- Papier régulier
|
⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth
N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett., 5,
1878, (2010)
- Article de conférence
|
⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy
N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry
J. Cryst. Growth, 312,
2625, (2010)
- Papier régulier
|
⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues,
B. Damilano, and J. Massies
J. Appl. Phys., 108,
033104, (2010)
- Papier régulier
|
⋄ Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
Y. Arroyo-Rojas Dasilva, M.-P. Chauvat, P. Ruterana, L. Lahourcade, E. Monroy, G. Nataf
J. Phys. Cond. Mat., 22,
355802, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates
J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett., 97,
081903, (2010)
- Papier régulier
|
⋄ Carrier transfer and recombination dynamics of a long-lived and visiblerange emission from multi-stacked GaN/AlGaN quantum dots
J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault
Appl. Phys. Lett., 97,
061905, (2010)
- Papier régulier
|
⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities
F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule
J. Appl. Phys., 108,
043508, (2010)
- Papier régulier
|
⋄ Electrical behaviour of lateral Al/n-GaN/Al structures
Z.J. Horvath, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pecza
App. Surf. Science, 256,
5614, (2010)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses
O. Moshe, D.H. Rich, B. Damilano and J. Massies
J. Vac. Sci.Technol.B, 28,
C5E25, (2010)
- Papier régulier
|
⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes
M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron, 46,
1058, (2010)
- Papier régulier
|
⋄ Photoemission of Si 1s --> 2pz transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection
T. Antoni, M. Carras, X. Marcadet, B. Vinter, and V. Berger
Appl. Phys. Lett., 97,
042102-3, (2010)
- Papier régulier
|
⋄ Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range
F. Lecourt, Y. Douvry, N. Defrance, V. Hoel, Y. Cordier, J.C. De Jaeger
Proc. of the 5th European Microwave Integrated Circuits Conference, 2010,
33-36, (2010)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz
J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices, 57,
1497-1503, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Surface band-gap narrowing in quantized electron accumulation layers
P.D.C. King, T.D. Veal, C.F. McConville, J. Zúñiga-Pérez, V. Munõz-Sanjosé, M. Hopkinson, E.D.L. Rienks, M. Fuglsang Jensen, and Ph. Hofmann
Phys. Rev. Lett., 104,
256803, (2010)
- Papier régulier
|
⋄ In-clustering effects in InAIN and InGaN revealed by high pressure studies
I. Gorczyca, T. Suski, A. Kaminska, G. Staszczak, H.P.D. Schenk, N.E. Christensen, A. Svane
Phys. Stat. Sol. A, 207,
1369, (2010)
- Article de conférence
|
⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching
P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf
Appl. Phys. Lett., 96,
231918, (2010)
- Papier régulier
|
⋄ Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
I. Gorczyca, A. Kaminska, G. Staszczak, R. Czernecki, S.P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butté, J.F. Carlin, E. Feltin, N. Grandjean, N.E. Christensen, and A. Svane
Phys. Rev. B, 81,
235206 , (2010)
- Papier régulier
|
⋄ Two-dimensional confined photonic wire resonators: strong light-metter coupling
R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinlander, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, and M. Grundmann
Phys. Stat. Sol. B, 247,
1351, (2010)
- Papier régulier
|
⋄ Luminescence properties of ZnO/Zn1-xCdxO/ZnO double heterostructures
M. Lange, C.P. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Appl. Phys., 107,
093530, (2010)
- Papier régulier
|
⋄ Whispering gallery modes in zinc oxide micro- and nanowires
C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann
Phys. Stat. Sol. B, 247,
1282, (2010)
- Papier régulier
|
⋄ Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN
J. Pedros, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua
Appl. Phys. Lett., 96,
123505, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Epitaxial graphene on Cubic SiC(111)/Si(111) substrate
A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski
Appl. Phys. Lett., 96,
191910, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission
Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3,
200983426, (2010)
- Article de conférence
|
⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation
A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne,
M. Portail, M. Zielinski, E. Collard, D. Alquier
Mat. Sci. Eng. B, 171,
120, (2010)
- Papier régulier
|
⋄ Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers
M. Carras, G. Maisons. B. Simozrag, M. Garcia, O. Parillaud, J. Massies, X. Marcadet
Appl. Phys. Lett., 96,
161105, (2010)
- Papier régulier
|
⋄ Temperature dependence of electron spin relaxation in bulk GaN
J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Phys. Rev. B, 81,
155216, (2010)
- Papier régulier
|
⋄ Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructureof Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy
P. Vennéguès, S. Founta, H. Mariette, and B. Daudin
Jpn. J. Appl. Phys., 49,
040201, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si
X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Appl. Phys. Lett., 96,
142104, (2010)
- Papier régulier
|
⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results
F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule
J. Phys.: Conf. Ser., 210,
012026, (2010)
- Article de conférence
|
⋄ Tuning the lateral density of ZnO nanowires arrays and its applications as physical templates for radial nanowire heterostructures
B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, and M. Grundmann
J. Mater. Chem., 20,
3848, (2010)
- Papier régulier
|
⋄ Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy
R. Cusco, J. Ibanez, N. Domenech-Amador, L. Artus, J. Zúñiga-Pérez, and V. Munoz-Sanjose
J. Appl. Phys., 107,
063519, (2010)
- Papier régulier
|
⋄ GaN quantum dots in (Al,Ga)N-based Microdisks
S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond
J. Phys.: Conf. Ser., 210,
012005, (2010)
- Article de conférence
|
⋄ Self-organized growth of ZnO-based nano- and microstructures
M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann
Phys. Stat. Sol. B, 247,
1265, (2010)
- Papier régulier
|
⋄ Recent advances in surface preparation of silicon carbide and other wide band gap materials
M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail
Mat. Sci. For., 645-648,
753-758, (2010)
- Article de conférence - invité
|
⋄ Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon
F. Natali, N. O.V. Plank, B. M. Ludbroo, J. Richter, T. Minnee, B. J. Ruck, H. J. Trodahl, J. V. Kennedy, L. Hirsch
Jpn. J. Appl. Phys., 49,
025505, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates
P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett., 46,
240, (2010)
- Papier régulier
|
⋄ Thermally induced surface reorganization of 3C-SiC(111) epilayersgrown on silicon substrates
M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski
Mat. Sci. For., 645-648,
155-158, (2010)
- Article de conférence
|
⋄ Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding
R. Charash, H. Kim-Chauveau, J.M. Lamy, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J.Y. Duboz, A. Hangleiter and B. Corbett
Appl. Phys. Lett., 98,
201112, (2010)
- Papier régulier
|
⋄ SiC on SOI resonators: a route for electrically driven MEMS in harshenvironment
M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648,
845-848, (2010)
- Article de conférence
|
⋄ 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon
Mat. Sci. For., 645-648,
1207-1210, (2010)
- Article de conférence
|
⋄ Two-Gap Superconductivity in 2H-NbS(2)
Z. Pribulova, M. Leroux, J. Kacmarcik, C. Marcenat, T. Klein, P. Rodiere, L. Cario, P. Samuely
Acta Phys. Pol. A, 118 (5),
1024, (2010)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses
M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc, 1292,
115, (2010)
- Article de conférence
|
⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature
A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier
AIP Conf Proc, 1292,
51, (2010)
- Article de conférence
|
⋄ Comparison of GaN-Based MOS Structures with Different Interfacial Layer Treatments
E. Al Alam, I. Cortes, M. P. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazzare, Y. Cordier, K. Isoird, F. Olivié
Proc. of the 27th conference on microelectronics, 2010,
459, (2010)
- Article de conférence
|
⋄ Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648,
585-588, (2010)
- Article de conférence
|
⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon
S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier
AIP Conf Proc, 1292,
15, (2010)
- Article de conférence
|
⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation
J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
ACS Appl. Electron. Mater., 1246,
B09-04, (2010)
- Article de conférence
|
⋄ Anisotropic electron spin relaxation in bulk GaN
J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Appl. Phys. Lett., 95,
192107, (2009)
- Papier régulier
|
⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance
Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique, 10,
73-77, (2009)
- Article de conférence
|
⋄ Phase separation in GaN/AlGaN quantum dots
M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès
Appl. Phys. Lett., 95,
141901, (2009)
- Papier régulier
|
⋄ Interfacial properties of AlN and oxidized AlN on Si
M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán.
surface science, 604,
63, (2009)
- Papier régulier
|
⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection
P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett., 30,
1308, (2009)
- Papier régulier
|
⋄ Single-ion anisotropy in Mn-doped diluted magnetic semiconductors
A. Savoyant, A. Stepanov, R. Kuzian, C. Deparis, C. Morhain, and K. Grasza
Phys. Rev. B, 80,
115203, (2009)
- Papier régulier
|
⋄ In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates
P. Vennéguès, T. Zhu, Z. Bougrioua, D. Martin, J. Zúñiga-Pérez, and N. Grandjean
Jpn. J. Appl. Phys., 48,
090211, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 95,
121102, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging
J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings, 7474,
74741G, (2009)
- Article de conférence
|
⋄ Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms
F. Reveret, P. Disseix, J. Leymarie, F. Semond F et al.
Solid State Com., 150,
122, (2009)
- Papier régulier
|
⋄ Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers
M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al-Suleiman, A. El-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, H.S. Kwack, J. Gu
Nanotechnology, 20,
332001, (2009)
- Papier régulier
|
⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions
S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett., 95,
081903, (2009)
- Papier régulier
|
⋄ Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications
H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, A. Dadgar, and A. Krost
J. Cryst. Growth, 311,
3984, (2009)
- Papier régulier
|
⋄ Al and Ti/Al contacts on n-GaN
L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua
Vacuum, 84,
228, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors
Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
Phys. Stat. Sol. C, 6,
1432, (2009)
- Article de conférence
|
⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C, 6,
1424, (2009)
- Article de conférence
|
⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)
Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C, 6 - S2,
1016-1019, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev
J. Appl. Phys., 105,
073703, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy
P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf
Appl. Phys. Lett., 94,
191903, (2009)
- Papier régulier
|
⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption
F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet
Phys. Rev. B, 79,
125302, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel
Mat. Sci. For., 615-617,
49, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates
P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf
Jpn. J. Appl. Phys., 48,
031002, (2009)
- Papier régulier
|
⋄ Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires
B. Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, and M. Grundmann
Nanotechnology, 20,
305701, (2009)
- Papier régulier
|
⋄ Optical investigations of bulk and multi-quantum well nitride-based microcavities
F. Reveret, F. Medard, P. Disseix, F. Semond et al.
Optical Materials, 31,
505, (2009)
- Article de conférence
|
⋄ Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
M. Marinova, T. Robert, S. Juillaguet, I. Tsiaoussis, N. Frangis, E. Polychroniadis, J. Camassel, T. Chassagne
Phys. Stat. Sol. A, 206,
1924-1930, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E.K. Polychroniadis and J. Camassel
Mat. Sci. For., 615-617,
339-342, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet
J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EAS Publications Series, 37,
207-215, (2009)
- Article de conférence
|
⋄ Catalytic unzipping of carbon nanotubes to few-layer graphene sheets undermicrowaves irradiation
I. Janowska , O. Ersen , T. Jacob, P. Vennéguès, D. Bégin, M.J. Ledoux, C. Pham-Huu
Applied Catalysis A:General, 371,
22-30, (2009)
- Papier régulier
|
⋄ Recent ROB developments on wide bandgap based UV sensors
B. Giordanengo, A. Ben Moussa, J.F. Hochedez, A. Soltani, P. de Moor, K. Minouglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zhou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, and H.X. Jiang
EDP_EAS, 37,
199, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ UV Imaging Based on AlGaN Arrays
J.Y. Duboz, J. Brault, J.P. Truffer, J.A. Robot, K. Robin, J.L. Reverchon
Phys. Stat. Sol. (c), S2,
S611, (2009)
- Article de conférence
|
⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration
P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206,
371-374, (2009)
- Papier régulier
|
⋄ Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga-Pérez, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. B, 27,
1780, (2009)
- Article de conférence
|
⋄ Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations
P.D.C. King, T.D. Veal, A. Schleife, J. Zúñiga-Pérez, B. Martel, P.H. Jefferson, F. Fuchs, V. Munoz-Sanjosé, F. Bechstedt, and C.F. McConville
Phys. Rev. B, 79,
205205, (2009)
- Papier régulier
|
⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities
F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux
Photonics and Nanostructures, 7,
26, (2009)
- Article de conférence
|
⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures
S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond
Applied Physics Express, 2,
051003, (2009)
- Papier régulier
|
⋄ Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces
O. Copie, V. Garcia, C. Bödefeld, C. Carrétéro, M. Bibes, G. Herranz, E. Jacquet, J.L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffrès, and A. Barthélémy
Phys. Rev. Lett., 102,
216804-4, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?
A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311,
3278, (2009)
- Papier régulier
|
⋄ Anomalous photoresponse of GaN X-ray Schottky detectors
J.Y. Duboz, B. Beaumont, J.L. Reverchon and A.D. Wieck
J. Appl. Phys., 105,
114512, (2009)
- Papier régulier
|
⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For., 600-603,
1277-1280, (2009)
- Article de conférence
|
⋄ Substrates for III−Nitride−based Electroluminescent Diodes
P. de Mierry
LEDs for Lighting Applications, Patrick Mottier (CEA, LETI), Editors ISTE Ltd (UK),
29-73, (2009)
- Livres et chapitres de livres
|
⋄ Epitaxial aluminium nitride on patterned silicon
J. Moreno, E. Frayssinet, F. Semond et al.
Materials Science in Semicond. Processing, 12,
31, (2009)
- Article de conférence
|
⋄ Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein
J. Stat. Mech., 1,
P01046, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells
T. Laurent, P. Nouvel, J. Torres, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, J.P. Faurie, B. Beaumont, E. Starikov, P. Shiktorov, V. Gruzinskis
Journal of Physics : Conference Series, 193,
012094, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Analysis of the C-V characteristic SiO2/GaN MOS capacitors
I. Cortes, E. Al-Alam, M.P. Besland, P. Regreny, F. Morancho, A. Cazarré, Y. Cordier, A. Goullet and K. Isoird
Proc. 7th Spanish Conference on Electron Devices, 7,
254-257, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing, 12,
16-20, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors
N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2,
715-718, (2009)
- Article de conférence
|
⋄ Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
F. Natali, Y. Cordier, C. Chaix, P. Bouchaib
J. Cryst. Growth, 311,
2029-2032, (2009)
- Article de conférence
|
⋄ Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-wells
T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux
Proc. 29th Int. Conf. Physics of Seminconductors ICPS, 1199,
191, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Infrared detectors based on InGaAsN/GaAs intersubband transitions
J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien
Appl. Phys. Lett., 94,
022103, (2009)
- Papier régulier
|
⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311,
2002-2005, (2009)
- Article de conférence
|
⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2,
1020-1023, (2009)
- Article de conférence
|
⋄ (Zn, Mg)O/ZnO based heterostructures grown by molecular beam epitaxy on sapphire: polar vs non-polar
J.M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zúñiga-Pérez, and B. Vinter
Microelectronics Journal, 40,
512, (2009)
- Article de conférence - invité
|
⋄ Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
P.D.C. King, T.D. Veal, P.H. Jefferson, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
Phys. Rev. B, 79,
035203, (2009)
- Papier régulier
|
⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79,
035328, (2009)
- Papier régulier
|
⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105,
033701, (2009)
- Papier régulier
|
⋄ Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahrèche , P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, C. Gaquière, and D. Théron
Appl. Phys. Lett., 94,
233506, (2009)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ GaN transistor characteristics at elevated temperatures
A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán
J. Appl. Phys., 106,
074519, (2009)
- Papier régulier
|
⋄ High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel, Y. Cordier
Mat. Sci. Eng. B, 165-1-2,
1-4, (2009)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy
M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mat. Sci. Eng. B, 165,
9, (2009)
- Papier régulier
|
⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon
M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Mat. Sci. For., 615-617,
169, (2009)
- Article de conférence
|
⋄ Development of thick GaN-on-silicon layers for rectifier applications
H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz
EWMOVPE-XIII, D.14,
343-346, (2009)
- Article de conférence - invité
|
⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy
M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mat. Sci. Eng. B, 165,
42, (2009)
- Papier régulier
|
⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures
H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c), S2,
897, (2009)
- Article de conférence
|
⋄ Towards green lasing: ingredients for a green laser diode based on GaInN
A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter
Phys. Stat. Sol. (c), C6 (S2),
792, (2009)
- Article de conférence
|
⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates
M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
J. Appl. Phys., 105,
083505, (2009)
- Papier régulier
|
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246,
845-845, (2009)
- Papier régulier
|
⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105,
033519, (2009)
- Papier régulier
|
⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy
M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès
Appl. Phys. Lett., 94,
143105, (2009)
- Papier régulier
|
⋄ Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds
E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez
Nanotechnology, 20,
065701, (2009)
- Papier régulier
|
⋄ Optical and excitonic properties of ZnO films
M. Mihailovic, A. L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D. A. Buell, F. Semond, C. Morhain, and J. Zúñiga-Pérez
Optical Matérials, 31,
532, (2009)
- Article de conférence
|
⋄ Highly sensitive strained AlN on Si(111) resonators
M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre
Sensors and Actuators A: Physical, 150,
64-68, (2008)
- Papier régulier
|
⋄ Growth and Characterization of Non-Polar (Zn,Mg)O/ZnO Quantum Wells and Multiple Quantum Wells
J.M. Chauveau, B. Vinter, M. Laugt, M. Teisseire, P. Vennéguès, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Kor. Phys. Soc., 53(5),
2934, (2008)
- Article de conférence
|
⋄ Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics
S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang
J. Cryst. Growth, 311,
2087-2090, (2008)
- Article de conférence
|
⋄ Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices
H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau
J. Cryst. Growth, 311,
2091-2095, (2008)
- Article de conférence
|
⋄ Performance of Unstuck Γ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10GHz
J.C. Gerbedoen, A.Soltani, N. Defrance, M. Rousseau, C. Gaquiere, J.C. De Jaeger, S. Joblot, Y. Cordier
European Microwave Integrated Circuits Conference, 2008,
330-333, (2008)
- Article de conférence
|
⋄ Gallium Nitride: A Nanoscale Study Using Electron Microscopy and Associated techniques
M. Benaissa and P. Vennéguès
Sains Malaysiana, 37(3),
255-259, (2008)
- Article de conférence - invité
|
⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90,
101117, (2008)
- Papier régulier
|
⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys, 41,
155102, (2008)
- Papier régulier
|
⋄ Mosaicity and stress effects on luminescence properties of GaNMosaicity and stress effects on luminescence properties of GaN
A. Toure, A. Bchetnia, T.A. Lafford, Z.Benzarti, I. Halidou, Z. Bougrioua, B. El Jani
Phys. Stat. Sol. A, 208,
2042, (2008)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Structural and optical properties of Zn(1-x)CdxO solid solutions grown on ZnO substrates by using MOCVD
A. Lusson, N. Hanèche, V. Sallet, P. Galtier, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, S. Agouram, J.A. Bastos Segura, E. Leroy
J. Kor. Phys. Soc., 53,
158, (2008)
- Article de conférence
|
⋄ Magnesium diffusion profile in GaN grown by MOVPE
Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani
J. Cryst. Growth, 310,
3274, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre
J. Cryst. Growth, 310,
3174-3182, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Luminescence upconversion in GaAs quantum wells
S. Eshlaghi, W. Worthoff, A.D. Wieck, and D. Suter
Phys. Rev. B, 77,
245317, (2008)
- Papier régulier
|
⋄ Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory
R. Bardoux, T. Guillet, B. Gil, P. Levebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,
235315, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory
R. Bardoux, T.y Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,
235315, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities
K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond
Appl. Phys. Lett., 92,
241105, (2008)
- Papier régulier
|
⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities
F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies
Phys. Rev. B, 77,
195303, (2008)
- Papier régulier
|
⋄ Structural and electrical properties of Au and Ti/Au contacts to n-type GaN
L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua
Vacuum, 82,
794, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ AlGaN photodetectors for applications in the extreme UV range
P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE, 7003,
, (2008)
- Article de conférence
|
⋄ Mechanism of mobility increase of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma irradiation
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N; Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev
J. Appl. Phys., 103,
083707, (2008)
- Papier régulier
|
⋄ Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
M. Richter, D. Reuter, J.Y. Duboz, A.D. Wieck
PhysicaE, 40,
1891, (2008)
- Article de conférence
|
⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth, 310,
948, (2008)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN
O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, Y. André
Phys. Rev. B, 77,
045206, (2008)
- Papier régulier
|
⋄ Magnetotransport in Gd-implanted wurtzite GaN/AlxGa1−xN high electron mobility transistor structures
F.Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A.D. Wieck
Appl. Phys. Lett., 92,
112111, (2008)
- Papier régulier
|
⋄ Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities
K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond
Semicond. Sci. Tech., 8,
045008, (2008)
- Papier régulier
|
⋄ Band gap narrowing and radiative efficiency of silicon doped GaN
H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, and D.H. Rich
J. Appl. Phys., 103,
103502, (2008)
- Papier régulier
|
⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode
T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf
Electron. Lett., 44,
231, (2008)
- Papier régulier
|
⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92,
051911, (2008)
- Papier régulier
|
⋄ High doping level in Mg-doped GaN layers grown at low temperature
A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103,
013110, (2008)
- Papier régulier
|
⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities
F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett., 92,
042119, (2008)
- Papier régulier
|
⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech., 23,
035020, (2008)
- Papier régulier
|
⋄ Strong light-matter coupling in GaN-based microcavities grown on silicon substrates
F. Semond, I.R. Sellers, N. Ollier et al.
MRS proceedings, 1068,
95-100, (2008)
- Article de conférence
|
⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C
L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron
Appl. Phys. Lett., 92,
043504, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Les substrats pour les diodes électroluminescentes de type III−nitrures
P. de Mierry
Les diodes electroluminescentes pour l eclairage, P. Mottier, Hermès, ISBN 978-2-7462-2097-3,
49−90, (2008)
- Livres et chapitres de livres
|
⋄ Electronic structure of single-crystal rocksalt CdO studied by soft x-ray spectroscopies and ab initio calculations
L.F.J. Piper, A. DeMasi, K.E. Smith, A. Schleife, F. Fuchs, F. Bechstedt, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Phys. Rev. B, 77,
125204, (2008)
- Papier régulier
|
⋄ Composition analysis of semiconductor quantum wells by energy filtered convergent beam electron diffraction
D. Jacob, J.M. Zuo, A. Lefebvre, Y. Cordier
Ultramicroscopy, 108,
358–366, (2008)
- Papier régulier
|
⋄ Molecular Beam Epitaxy of AlN Layers on Si (111)
J.C. Moreno, E. Frayssinet, F. Semond et al.
MRS symposium proceeding, 1068,
141-145, (2008)
- Article de conférence
|
⋄ Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity
F. Stokker-Cheregi, A. Vinattieri, M. Colocci, F. Semond et al.
Phys. Stat. Sol. C, 5,
2257, (2008)
- Article de conférence
|
⋄ Strong coupling in bulk GaN microcavities grown on silicon
F. Reveret, I.R. Sellers, P. Disseix, F. Semond et al.
Phys. Stat. Sol. C, 4,
108-111, (2008)
- Article de conférence
|
⋄ Dry etching of N-face GaN using two high-density plasma etch techniques
F. Rizzi, K. Bejtka, F. Semond et al.
Phys. Stat. Sol. C, 4,
200-203, (2008)
- Article de conférence
|
⋄ Bandgap and effective mass of epitaxial cadmium oxide
P.H. Jefferson, S.A. Hatfield, T.D. Veal, P.D.C. King, C.F. McConville, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Appl. Phys. Lett., 92,
022101, (2008)
- Papier régulier
|
⋄ Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy
P. Vennéguès, J.M. Chauveau, M. Korytov, C. deparis, J. Zúñiga-Pérez, and C. Morhain
J. Appl. Phys., 103,
083525, (2008)
- Papier régulier
|
⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29,
1187-1189, (2008)
- Papier régulier
|
⋄ Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy
L.F.J. Piper, L. Colakerol, P.D.C. King, A. Schleife, J. Zúñiga-Pérez, P.A. Glans, T. Learmonth, A. Federov, T.D. Veal, F. Fuchs, V. Muñoz-Sanjosé, F. Bechstedt, C.F. McConville and K.E. Smith
Phys. Rev. B, 78,
165127, (2008)
- Papier régulier
|
⋄ In-plane anisotropy characteristics of GaN epilayers grown on A-face sapphire substrates
HJ. Kim-Chauveau, P. De Mierry, H. Cabane, and D. Gindhart
J. Appl. Phys., 104,
113516, (2008)
- Papier régulier
|
⋄ Interface structure and anisotropic strain relaxation of non polar wurtzite (11-20) and (10-10) orientations: ZnO epilayers grown on sapphire
J.M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Appl. Phys., 104,
073535, (2008)
- Papier régulier
|
⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
J. Cryst. Growth, 310,
4417–4423, (2008)
- Papier régulier
|
⋄ Residual strain in nonpolar a-plane Zn(1−x)MgxO (0< x <0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells
J.M. Chauveau, J. Vives, J. Zúñiga-Pérez, M. Laügt, M. Teisseire, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett., 93,
231911, (2008)
- Papier régulier
|
⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates
R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c), 5 - n°6,
1971-1973, (2008)
- Article de conférence
|
⋄ Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy
J.M. Chauveau, M. Laügt, P. Vennéguès, M. Teisseire, B. Lo, C. Deparis, C. Morhain, and B. Vinter
Semicond. Sci. Tech., 23 (3),
035005, (2008)
- Papier régulier
|
⋄ Thickness and substrate effects on AlN thin film growth at room temperature
B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
Eur. Phys. J. Appl. Phys., 43(3),
309-313, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si
A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier
Mater. Res. Soc. Symp. Proc., 1068,
1068-C07-09, (2008)
- Article de conférence
|
⋄ Anomalous Hall Effect in Gd-Implanted Wurtzite AlxGa1-N-x/GaN High Electron Mobility Transistor Structures
F.Y Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck
Materials Research Society Symposium Proceedings, 1111,
61-69, (2008)
- Article de conférence
|
⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068,
51-56, (2008)
- Article de conférence
|
⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
ACS Appl. Electron. Mater., 1068,
C04-05, (2008)
- Article de conférence
|
⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1,
121101, (2008)
- Papier régulier
|
⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001)
S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett., 92,
23111, (2008)
- Papier régulier
|
⋄ GaN for x-ray detection
J.Y. Duboz, M. Laügt, H.P.D. Schenk, B. Beaumont, J.L. Reverchon, A.D. Wieck, and T. Zimmerling
Appl. Phys. Lett., 92,
263501, (2008)
- Papier régulier
|
⋄ Characterization of non-polar ZnO layers with positron annihilation spectroscopy
A. Zubiaga, F. Tuomisto, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Acta Physica Polonica A, 114,
1457, (2008)
- Article de conférence
|
⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors
R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors, ,
, (2008)
- Article de conférence
|
⋄ Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
T.D. Veal, P.D.C. King, S.A. Hatfield, L.R. Bailey, C.F. McConville, B. Martel, J.C. Moreno, E. Frayssinet, F. Semond, and J. Zúñiga-Pérez
Appl. Phys. Lett., 93,
202108, (2008)
- Papier régulier
|
⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates
M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier
Mater. Res. Soc. Symp. Proc., 1069,
1069-D07-09, (2008)
- Article de conférence
|
⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding
S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli
J. Appl. Phys., 103,
123112, (2008)
- Papier régulier
|
⋄ Comparison of GaInN laser structures grown on different substrates
A.D. Dräger, D. Fuhrmann, C. Netzel, U. Rossow, H.P.D. Schenk, and A. Hangleiter
Phys. Stat. Sol. (c), 5,
2277, (2008)
- Article de conférence
|
⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates
M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Mat. Sci. For., 600-603,
207-210, (2008)
- Article de conférence
|
⋄ Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy
W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, and
A.D. Wieck
Appl. Phys. Lett., 92,
193111, (2008)
- Papier régulier
|
⋄ Symmetry of wurtzite nanostructures with the c-axis in the layer plane
P. Tronc and P. Vennéguès
Phys. Rev. B, 77,
075336, (2008)
- Papier régulier
|
⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire
T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux
Phys. Rev. B, 77,
075308, (2008)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne
Phys. Stat. Sol. (c), 5, No. 6,
1983–1985, (2008)
- Article de conférence
|
⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN
H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter
Appl. Phys. Lett., 93,
081116, (2008)
- Papier régulier
|
⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates
M. Portail, M. Nemoz, M. Zielinski, T. Chassagne
Mat. Sci. For., 600-603,
231, (2008)
- Article de conférence
|
⋄ Low electron mobility of field-effect transistor determined by modulated magnetoresistance
R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki
J. Appl. Phys., 102,
103701 , (2007)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging
J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz
SPIE procedings, 6744,
674417, (2007)
- Article de conférence
|
⋄ Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates
A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier
Mat. Sci. For., 556-557,
721, (2007)
- Article de conférence
|
⋄ Trends in nitrogen doping for 3C-SiC films on silicon
M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel
Mat. Sci. For., 556-557,
207, (2007)
- Article de conférence
|
⋄ Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy
P. Muret, J. Pernot, M. Azize, Z. Bougrioua
J. Appl. Phys., 102,
053701, (2007)
- Papier régulier
|
⋄ Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy
H.P.D. Schenk, P. Demolon, S. Ndiaye, M. Laügt, T. Gühne, Z. Bougrioua, P. de Mierry, J.Y. Duboz, A.D. Dräger, C. Netzel, and A. Hangleiter
Proc. Int. Workshop Nitride Based Nanostruct., ,
127, (2007)
- Article de conférence
|
⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication
S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007,
96-99, (2007)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells
T. Guillet, T. Bretagnon, T. Taliercio, P. Lefebvre, B. Gil, C. Morhain, X.D. Tang
Superlattice Microst, 41,
352, (2007)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Magnetic properties of single crystalline Zn1-xCoxO thin films
P. Sati, S. Schafer, C. Morhain, C. Deparis, A. Stepanov
Superlattice Microst, 42,
191, (2007)
- Article de conférence
|
⋄ Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells
T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, C. Morhain
Appl. Phys. Lett., 90,
201912, (2007)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations
T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz
J. Appl. Phys., 101,
073510, (2007)
- Papier régulier
|
⋄ (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer
F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, and R.W. Martin
Appl. Phys. Lett., 90,
111112, (2007)
- Papier régulier
|
⋄ Antiferromagnetic Interactions in Single Crystalline Zn1-xCoxO Thin Films
P. Sati, C. Deparis, C. Morhain, S. Schafer, and A. Stepanov
Phys. Rev. Lett., 98 (13),
137204-4, (2007)
- Papier régulier
|
⋄ Magnetotransport characterization of AlGaN/GaN interfaces
R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Phys. Stat. Sol. A, 204,
586, (2007)
- Article de conférence
|
⋄ Deuterium Out-diffusion Kinetics in Magnesium-doped GaN
J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage
Mat. Res. Soc. Symp. Proc., 994,
F03-22, (2007)
- Article de conférence
|
⋄ Energy levels and intersubband transitions in InGaAsN/AlGaAs quantum wells
J.Y. Duboz
Phys. Rev. B, 75,
045327, (2007)
- Papier régulier
|
⋄ Cathodoluminescence investigation of stacking faults extension in 4H-SiC
S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Phys. Stat. Sol. A, 204,
2222-2228, (2007)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Screening the built-in electric field in 4H silicon carbide stacking faults
S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Appl. Phys. Lett., 90,
111902, (2007)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells
M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies
Phys. Rev. B, 75,
045313, (2007)
- Papier régulier
|
⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302,
71-74, (2007)
- Article de conférence
|
⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE
Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth, 301-302,
434-436, (2007)
- Article de conférence
|
⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M.
M. Hugues, B. Damilano, J.Y. Duboz, J. Massies
Phys. Rev. B, 75,
115337, (2007)
- Papier régulier
|
⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission
Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux
Phys. Stat. Sol. (a), 204, n°1,
282-289, (2007)
- Article de conférence
|
⋄ Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain
J. Cryst. Growth, 301-302,
366-9, (2007)
- Article de conférence
|
⋄ Intersubband transitions in InGaAsN/AlGaAs quantum wells with a high confinement energy
J.Y. Duboz
Phys. Stat. Sol. (c), 7,
2391, (2007)
- Article de conférence
|
⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46,
12-16, (2007)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ From evidence of strong light-matter coupling to polariton emission in GaN microcavities
I.R Sellers, F. Semond, M. Zamfirescu et al.
Phys. Stat. Sol. B, 244,
1882-1886, (2007)
- Article de conférence
|
⋄ Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer
F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond et al.
Superlattice Microst, 41,
414-418, (2007)
- Article de conférence
|
⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties
M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c), 4, No. 1,
137-140, (2007)
- Article de conférence
|
⋄ Electric-field screening effects in the micro-photoluminescence spectra of as-grown stacking faults in 4H-SiC
S. Juillaguet, T. Guillet, R. Bardoux, J. Camassel and T. Chassagne
Mat. Sci. For., 556-557,
351-354, (2007)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole
R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al.
Physics of semiconductors, B893,
941-942, (2007)
- Article de conférence
|
⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c), 4, n°7,
2670-2673, (2007)
- Article de conférence
|
⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots
M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies
Phys. Rev. B, 76 (7),
075335-6, (2007)
- Papier régulier
|
⋄ Polariton emission in GaN microcavities
M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,
284, (2007)
- Article de conférence
|
⋄ Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, and B. Damilano
Phys. Rev. B, 75,
075306, (2007)
- Papier régulier
|
⋄ Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers
A. Zubiaga, J.A. García, F. Plazaola, F. Tuomisto, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Phys. Rev. B, 75,
205305, (2007)
- Papier régulier
|
⋄ InAs/AlAsSb based quantum cascade lasers
X. Marcadet, C. Renard, M. Carras, M. Garcia, J. Massies
Appl. Phys. Lett., 91,
161104, (2007)
- Papier régulier
|
⋄ AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)
J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications, 6585,
33-40, (2007)
- Article de conférence
|
⋄ Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu
Applied Physics A: Materials Science and Processing, 88 (1),
65-9, (2007)
- Article de conférence
|
⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification
S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, No. 11,
2843-2848, (2007)
- Papier régulier
|
⋄ Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns
Z. Bougrioua, P. Gibart, E. Calleja, A. Trampert, J. Ristic, M. Utrera, G. Nataf
J. Cryst. Growth, 309,
113-120, (2007)
- Papier régulier
|
⋄ Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
A. Soltani, A. BenMoussa, S. Touati, V. Hoël, J.C. De Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M.A. Djouadi, C. Dua
Diamond and Related Materials, 16,
262–266, (2007)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Photoelectric properties of highly excited GaN-Fe epilayers grown by modulation- and continuous-doping techniques
Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarasiunas
J. Cryst. Growth, 300,
228-232, (2007)
- Article de conférence
|
⋄ Anisotropic morphology of nonpolar a-plane quantum dots and quantum wells
S. Founta, C. Bougerol, H. Mariette, B. Daudin and P. Vennéguès
J. Appl. Phys., 102,
074304, (2007)
- Papier régulier
|
⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies
J. Cryst. Growth, 309,
1–7, (2007)
- Papier régulier
|
⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime
F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,
376, (2007)
- Article de conférence
|
⋄ Monolithic white light emitting diodes with a broad emission spectrum
A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1,
57-60, (2007)
- Article de conférence
|
⋄ ZnO micro-pillar resonators with coaxial Bragg reflectors
R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm,
J. Lenzner, and M. Grundmann
AIP Conference Proceedings, 893,
1137-1138, (2007)
- Article de conférence
|
⋄ Energetically deep defect centers in vapor-phase grown zinc oxide
T. Frank, G. Pensl, R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás,V. Muñoz-Sanjosé, T. Ohshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann and B. Meyer
Appl. Phys. A, 88,
141, (2007)
- Article de conférence
|
⋄ All-optical characterisation of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE grown GaN
T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, A. Kakanakova, E. Janzen, D. Gogova, B. Monemar, M. Heuken
J. Cryst. Growth, 300,
223-227, (2007)
- Article de conférence
|
⋄ X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)
L.F.J. Piper, P.H. Jefferson, T.D. Veal, C.F.C. McConville, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Superlattice Microst, 42,
197, (2007)
- Article de conférence
|
⋄ Fabrication of monocrystalline 3C-SiC resonators for MHz frequency applications
M. Placidi, P. Godignon, N. Mestres, G. Abadal, G. Ferro, A. Leycuras, T. Chassagne
Sensors and Actuators B, ,
, (2007)
- Article de conférence
|
⋄ Nanogoniometry with Scanning Force Microscopy: A Model Study of CdTe Thin Films
E. Palacios-Lidón, L. Guanter, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and J. Colchero
Small, 3,
474, (2007)
- Papier régulier
|
⋄ Formation and rupture of Schottky nanocontacts on ZnO nanocolumns
B. Pérez-García, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, J. Colchero, and E. Palacios-Lidón
Nano Letters, 7,
1505, (2007)
- Papier régulier
|
⋄ Electron Scattering Spectroscopy by High Magnetic Field in Mid-Infrared Quantum Cascade Lasers
A. Leuliet, A. Wade, A. Vasanelli, G. Fedorov, D. Smirnov, M. Giovannini, J. Faist, G. Bastard, B. Vinter, and C. Sirtori
ICPS, AIP Conference Proceedings, 893,
497-498, (2007)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy
P. Vennéguès, Z. Bougrioua and T. Guehne
Jpn. J. Appl. Phys, 46, n° 7A,
4089, (2007)
- Papier régulier
|
⋄ Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions
M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel
Phys. Stat. Sol. (a), 204,
981, (2007)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Ordered growth of tilted ZnO nanowires: morphological, structural and optical charcaterization
J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann
Nanotechnology, 18,
195303, (2007)
- Papier régulier
|
⋄ Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) andsemipolar (11-22) GaN in relation to microstructural characterization
T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux
J. Appl. Phys., 101,
113101, (2007)
- Papier régulier
|
⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source
S. Vézian, A. Le Louarn and J. Massies
J. Cryst. Growth, 303,
419, (2007)
- Papier régulier
|
⋄ X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy
C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé
Appl. Phys. A, 88,
61, (2007)
- Article de conférence
|
⋄ Nanoscale determination of surface orientation and electrostatic properties of ZnO thin films
J. Zúñiga-Pérez, E. Palacios-Lidón, V. Muñoz-Sanjosé, and J. Colchero
Appl. Phys. A, 88,
77, (2007)
- Article de conférence
|
⋄ Structural and morphological characterization of ZnO films grown on GaAs substrates by MOCVD
S. Agouram, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
Appl. Phys. A, 88,
83, (2007)
- Article de conférence
|
⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots
R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1,
183-186, (2007)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate
M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c), 3,
3848, (2006)
- Article de conférence
|
⋄ Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
Y.H. Cho, H. S. Kwack, B.J. Kwon, J. Barjon, J. Brault, B. Daudin, Le Si Dang
Appl. Phys. Lett., 89,
251914, (2006)
- Papier régulier
|
⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm
M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c), 3,
3979, (2006)
- Article de conférence
|
⋄ Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors
M. Sakowicz, R. Tauk, J. Lusakowski, A. Tiberj, W. Knap, Z. Bougrioua, M. Azize, P. Lorenzini, K. Karpierz, M. Grynberg
J. Appl. Phys., 100,
113726, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects
R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B, 74,
195319, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Growth of Ag thin films on ZnO(000-1) investigated by AES and STM
E. Duriau, S. Agouram, C. Morhain, T. Seldrum, R. Sporken, J. Dumont
App. Surf. Science, 253,
549, (2006)
- Papier régulier
|
⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature
I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B, 74,
193308, (2006)
- Papier régulier
|
⋄ Spin-exchange interaction in ZnO-based quantum wells
B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J.A. Sans, T. Taliercio, and C. Morhain
Phys. Rev. B, 74,
153302, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate
M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck
Appl. Phys. Lett., 88,
231902, (2006)
- Papier régulier
|
⋄ Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates
F. Tinjod, P. de Mierry, D. Lancefield, S. Chenot, E. Virey, J.L. Stone-Sundberg, M.R. Kokta, D. Pauwels
Phys. Stat. Sol. (c), (6),
2199-202, (2006)
- Article de conférence
|
⋄ Thermodynamical analysis of the shape and size dispersion of In As / In P ( 001 ) quantum dots
A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M. Mérat-Combes, G. Saint-Girons
Phys. Rev. B, 73,
16, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates
Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132,
365-368, (2006)
- Article de conférence
|
⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots
T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11),
113304-1-4, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Magneto-optical spectroscopy of (Zn,Co)O epilayers
W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, P. Kossacki, C. Morhain
Phys. Stat. Sol. B, 243,
863, (2006)
- Article de conférence
|
⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c), 3, N°6,
2325-2328, (2006)
- Article de conférence
|
⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst, (40),
359-362, (2006)
- Article de conférence
|
⋄ HIGH TEMPERATURE PULSED MEASUREMENTS OF AlGaN/GaN HEMTs ON HIGH RESISTIVE Si(111) SUBSTRATE
M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry, and C. Gaquiere
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 48, No. 11,
2303-2305, (2006)
- Papier régulier
|
⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications
M. Richter, B. Damilano, J. Massies, and J.Y. Duboz
Mater. Res. Soc. Symp. Proc., 891,
0891-EE03-29.1, (2006)
- Article de conférence
|
⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature
I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson
Phys. Stat. Sol. (b), 243(7),
1639, (2006)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon
I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson
Phys. Rev. B, 73,
033304, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Role of elastic scattering mechanisms in GaInAs/AlInAs quantum cascade lasers
A. Vasanelli, A. Leuliet, C. Sirtori, A. Wade, G. Fedorov, D. Smirnov, G. Bastard, B. Vinter, M. Giovannini, and J. Faist
Appl. Phys. Lett., 89 (17),
172120-3, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots
M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
Appl. Phys. Lett., 89,
231903, (2006)
- Papier régulier
|
⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm
M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies
Appl. Phys. Lett., 88,
91111, (2006)
- Papier régulier
|
⋄ Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer
K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux
Appl. Phys. Lett., 89,
191912, (2006)
- Papier régulier
|
⋄ Solar blind AlGaN photodetectors with a very high spectral selectivity
J.Y. Duboz , N. Grandjean, A. Dussaigne, M. Mosca, J.L. Reverchon, P.G. Verly, R.H. Simpson
Eur. Phys. J. Appl. Phys., 33,
5, (2006)
- Papier régulier
|
⋄ Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications
E. Feltin, J.F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean
Appl. Phys. Lett., 88,
051108, (2006)
- Papier régulier
|
⋄ Sensitivity of synchrotron radiation x-ray diffraction to the chemical ordering in epitaxial perovskite multilayers
M. Nemoz, E. Dooryhee, J.L. Hodeau, C. Dubourdieu, H. Roussel, P. Bayle-Guillemaud
J. Appl. Phys., 100,
124110, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Field-effect-modulated SAW devices on AlGaN/GaN heterostructures
J. Pedros, R. Cuerdo, F. Calle, J. Grajal, J.L. Martinez-Chacon, Z. Bougrioua
IEEE Ultrasonics Symposium, 2006,
273-276, (2006)
- Article de conférence
|
⋄ Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells
T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, X.D. Tang
J. Cryst. Growth, 287,
12, (2006)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Generation-recombination reduction in InAsSb photodiodes
M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger
Semicond. Sci. Tech., 21 (12),
1720-3, (2006)
- Papier régulier
|
⋄ AlGaN/GaN HEMTs on (001) silicon substrates
S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett., 42,
117-118, (2006)
- Papier régulier
|
⋄ Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co
P. Sati, R. Hayn, R. Kuzian, S. Regnier, S. Schafer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, Z. Golacki
Phys. Rev. Lett., 96,
017203-4, (2006)
- Papier régulier
|
⋄ Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study
B. Boudjelida, I. Gee, J. Evans-Freeman, S.A. Clark, M. Azize, J.M. Bethoux, and P. de Mierry
Phys. Stat. Sol. C, 3,
1823, (2006)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Room temperature Strong coupling in low finesse GaN microcavities
I.R. Sellers, F. Semond, M. Leroux, et al.
MRS symposium, 892,
485-490, (2006)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grownon Si(100)
G. Ferro, T. Chassagne, A. Leycuras, F. Cauwet, Y. Monteil
Chem. Vap. Deposition, 12,
483–488, (2006)
- Papier régulier
|
⋄ Investigation of the interface properties of MOVPE grown AlGaN/GaN highelectron mobility transistor (HEMT) structures on sapphire
T. Aggerstam, S. Lourdudoss, H.H. Radamson, M. Sjödin, P. Lorenzini, D.C. Look
Thin Solid Films, 515,
705–707, (2006)
- Article de conférence
|
⋄ An AlGaN Based Linear Array for UV Solar Blind Imaging from 240 nm to 280 nm
G. Mazzeo, J.L. Reverchon, J.Y. Duboz, A. Dussaigne
IEEE Sensors Journal, 6(4),
957-63, (2006)
- Papier régulier
|
⋄ Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion
A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos
Mat. Sci. For., 527-529,
1059, (2006)
- Article de conférence
|
⋄ Characterization of structural defects in GaN films grown on sapphire substrates
P. Vennéguès, F. Mathal, and Z. Bougrioua
Phys. Stat. Sol. (c), 3/6,
1658-1661, (2006)
- Article de conférence
|
⋄ Structural evaluation of GaN/sapphire grownby epitaxial lateral overgrowth by X-ray microdiffraction
M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, and P. Gibart
Phys. Stat. Sol. (b), 243, No. 7,
1545–1550, (2006)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Epitaxial orientation of III-Nitrides grown on R-plane sapphire by metalorganic-vapor-phase-epitaxy
P. Vennéguès and Z. Bougrioua
Appl. Phys. Lett., 89,
111915, (2006)
- Papier régulier
|
⋄ Effect of the s,p-d exchange interaction on the excitons in Zn1-xCoxO epilayers
W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, J. A. Gaj, P. Kossacki, and C. Morhain
Phys. Rev. B, 73 (3),
035214-13, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Application of LTPL Investigation Methods to CVD-Grown SiC
J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud
Chem. Vap. Deposition, 12,
549–556, (2006)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Stress relaxation during the growth of 3C-SiC/Si thin films
M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Appl. Phys. Lett., 89,
131906, (2006)
- Papier régulier
|
⋄ Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques
T. Malinauskas, K. Jarasiunas, S. Miasojedovas, S. Jursenas, B. Beaumont, P. Gibart
Appl. Phys. Lett., 88,
202109, (2006)
- Papier régulier
|
⋄ Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE
V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès
Phys. Stat. Sol. (c), 3, No.6,
1548, (2006)
- Article de conférence
|
⋄ On the determination of the structural parameters of GaxIn1-xAs/AlAsySb1-y superlattices by X-ray diffraction
C. Renard, X. Marcadet, J. Massies
J. Cryst. Growth, 297,
272, (2006)
- Papier régulier
|
⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy
S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40,
295-299, (2006)
- Article de conférence
|
⋄ Cylindric resonators with coaxial Bragg reflectors
R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch,
J. Lenzner, and M. Grundmann
Proc. SPIE, 6038,
603827, (2006)
- Article de conférence
|
⋄ Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire
T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye,
M. Teisseire, L. Nguyen, and P. Gibart
Mater. Res. Soc. Symp. Proc., 955,
0955-I12-04, (2006)
- Article de conférence
|
⋄ Structural characterisation of Sb-based heterostructures by X-ray scattering methods
C. Renard, O. Durand, X. Marcadet, J. Massies, O. Parillaud
Applied Surface Science, 253,
112, (2006)
- Article de conférence
|
⋄ Diodes électroluminescentes blanches pour l'éclairage
B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique, ,
86, (2006)
- Livres et chapitres de livres
|
⋄ Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire
M. Lorenz, R. Johne, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voss, and J. Gutowski
Appl. Phys. Lett., 89,
243510, (2006)
- Papier régulier
|
⋄ Properties of (InGa)As/GaAs QW (1200 nm) facet-coated edge-emitting diode laser
T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, J. Kovác, Jr., R. Schmidt-Grund,
B. Rheinländer, and D. Pudis
Laser Physics, 16,
441, (2006)
- Papier régulier
|
⋄ Optoelectronic properties of GaN epilayers in the region of yellow luminescence
C. Grazzi, H.P. Strunk, A. Castaldini, A. Cavallini, H.P.D. Schenk, and P. Gibart
J. Appl. Phys., 100,
073711, (2006)
- Papier régulier
|
⋄ Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells
C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B, 72 (24),
241305-4, (2005)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm
J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies
Appl. Phys. Lett., 87,
251109, (2005)
- Papier régulier
|
⋄ Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures
P. Lorenzini, Z. Bougrioua, A. Tiberj, R. Tauk, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Appl. Phys. Lett., 87,
232107, (2005)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Quantum and transport lifetimes of two-dimentional electrons gas in AlGaN/GaN heterostructures
P. Lorenzini, Z. Bougrioua, A. Tiberj, R. Tauk, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Appl. Phys. Lett., 87,
232107, (2005)
- Papier régulier
|
⋄ Status of AlGaN based Focal Plane Arrays for UV solar blind detection
J.L. Reverchon, G. Mazzeo, A. Dussaigne, J.Y. Duboz
Proc. SPIE, 5964,
596402, (2005)
- Article de conférence
|
⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy
S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett., 87,
133505, (2005)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert
Proc. SPIE Int. Soc. Opt. Eng., 5840,
81, (2005)
- Article de conférence
|
⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett., 87,
021102, (2005)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Carrier profiles in Fe doped GaN layers grown by MOVPE
M. Azize, Z. Bougrioua, P. Girard, and P. Gibart
Phys. Stat. Sol. (c), 2, 5,
2153-2156, (2005)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs
Z. Bougrioua, M. Azize, A. Jimenez, A.F. Braña, P. Lorenzini, B. Beaumont, E. Muñoz, and P. Gibart
Phys. Stat. Sol. (c), 2, 7,
2424-2428, (2005)
- Article de conférence
|
⋄ LP MOVPE growth and characterization of high Al content AlxGa1−xN epilayers
C. Touzi, F. Omnès, B. El Jani and P. Gibart
J. Cryst. Growth, 279,
31-36, (2005)
- Papier régulier
|
⋄ Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator
A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennéguès and J. Stoemenos
J. Electrochem. Soc., 152(4),
G259-65, (2005)
- Papier régulier
|
⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71,
75311, (2005)
- Papier régulier
|
⋄ Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügt, H. Haas
Phys. Stat. Sol. (a), 202, No. 4,
536-544, (2005)
- Article de conférence
|
⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures
J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, 864,
579-584, (2005)
- Article de conférence
|
⋄ High temperature electrical investigations of (Al,Ga)N/GaN heterostructures - Hall sensor applications
C. Consejo, S. Contreras, L. Konczewiez, P. Lorenzini, Y. Cordier, C. Skierbiszewski, J.L. Robert
Phys. Stat. Sol. (c), (4),
1438-43, (2005)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7,
2195-2198, (2005)
- Article de conférence
|
⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs
Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,
2720-2723, (2005)
- Article de conférence
|
⋄ Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A. Diforte-Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 30 (2),
77-82, (2005)
- Papier régulier
|
⋄ Interface band gap engineering in InAsSb photodiodes
M. Carras, J. L. Reverchon, G. Marre, C. Renard, B. Vinter, X. Marcadet, and V. Berger
Appl. Phys. Lett., 87 (10),
102103-3, (2005)
- Papier régulier
|
⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE
A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies
Proc. SPIE Int. Soc. Opt. Eng., 5840,
72, (2005)
- Article de conférence
|
⋄ Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells
C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu
Superlattice Microst, 38,
455-463, (2005)
- Article de conférence - invité
|
⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja
Appl. Phys. Lett., 86,
071105, (2005)
- Papier régulier
|
⋄ Single-Transverse-Mode InGaAsP/InP Edge-Emitting Bipolar Cascade Laser
F. Dross, F. Van Dijk, O. Parillaud, B. Vinter, and N. Vodjdani
IEEE J. Quant. Electr., 41,
1356-60, (2005)
- Papier régulier
|
⋄ Characterisation of differently grown GaN epilayers by time-resolved four-wave mixing technique
K. Jarašiunas, T. Malinauskas, R. Aleksiejunas, M. Sudžius, E. Frayssinet, B. Beaumont, J.P. Faurie and P. Gibart
Phys. Stat. Sol. (a), 202, No. 4,
566– 571, (2005)
- Article de conférence
|
⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4,
383-386, (2005)
- Article de conférence
|
⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers
B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro
Proc. SPIE Int. Soc. Opt. Eng., 5840,
781, (2005)
- Article de conférence
|
⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy
A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies
IEEE Photon. Techno. Letters, 17, Issue: 6,
1142-1144, (2005)
- Papier régulier
|
⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4,
393-396, (2005)
- Article de conférence
|
⋄ Light-ion beam analysis for microelectronic applications
L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon
Nucl Inst and MethodB, 240,
265, (2005)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well
M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro
Electron. Lett., 41 No.10,
595, (2005)
- Papier régulier
|
⋄ Optoelectronica (en russe/in Russian)
E. Rosencher & B. Vinter
Technosphera, Moskva, ,
1-592, (2005)
- Livres et chapitres de livres
|
⋄ Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennéguès, A. Leycuras
Mat. Sci. For., 483-485,
213-216, (2005)
- Article de conférence
|
⋄ Transmission electron microscopy of GaN layers grown by ELO and micro-ELO techniques
B. Pécz, Zs. Makkai, E. Frayssinet, B. Beaumont and P. Gibart
Phys. Stat. Sol. (c), 2, No. 4,
1310-1313, (2005)
- Article de conférence
|
⋄ Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities
K. Bejtka, F. Rizzi, P. R. Edwards, R.W. Martin, E. Gu, M.D. Dawson, I.M. Watson, I.R. Sellers, F. Semond
Phys. Stat. Sol. (a), 202,
2648, (2005)
- Papier régulier
|
⋄ AlGaInN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques
G. Blume, T.J.C. Hosea, S.J. Sweeney, P. de Mierry, D. Lancefield
IEEE Proceedings Optoelectronics., 152(2),
118-24, (2005)
- Article de conférence
|
⋄ Anisotropy-induced polarization mixture of surface acoustic waves in GaN/c-sapphire heterostructures
J. Pedros, F. Calle, J. Grajal, R.J. Jimenez Rioboo, Y. Takagaki, K.H. Ploog and Z. Bougrioua
Phys. Rev. B, 72,
075306, (2005)
- Papier régulier
|
⋄ First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger and C. Gaquière
IEE Microwave and Optical Technology Letters, 46, 4,
311-315, (2005)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Control of 3C–SiC/Si wafer bending by the “checker‐board” carbonization method
T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet, J. Camassel
Phys. Stat. Sol. (a), 202, No. 4,
524–530, (2005)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Behaviour of the 3C-SiC(100) c(2×2) (C-terminated) and 3×2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures
M. Portail, S. Saada, S. Delclos, J.C. Arnault, P. Soukiassian, P. Bergonzo, T. Chassagne, A. Leycuras
Phys. Stat. Sol. (a), 202, No. 11,
2234-2239, (2005)
- Article de conférence
|
⋄ Origin of Below Band-Gap Photoluminescence from GaN Quantum Dots in AlN Matrix
K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A. Yu. Nikitin, M. Teisseire, N. Grandjean, G. Neu, and P. Tronc
AIP Conference Proceedings, 772,
719, (2005)
- Article de conférence
|
⋄ Spin Carrier Exchange Interactions in (Ga,Mn)N and (Zn,Co)O Wide Band Gap Diluted Magnetic Semiconductor Epilayers
D. Ferrand, S. Marcet, W. Pacuski, E. Gheeraert, P. Kossacki, J.A. Gaj, J. Cibert, C. Deparis, H. Mariette, and C. Morhain
Journal of Superconductivity and Novel Magnetism, 18,
15, (2005)
- Article de conférence
|
⋄ High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
D. Gogova, H. Larsson, A. Kasic, G. Reza Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J.P. Faurie, B. Beaumont and P. Gibart,
Jpn. J. Appl. Phys, 44,
1181-1185, (2005)
- Papier régulier
|
⋄ High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN
D. Cai, F. Xu, J. Kang, P. Gibart and B. Beaumont
Appl. Phys. Lett., 86,
211917, (2005)
- Papier régulier
|
⋄ Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laugt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels
J. Cryst. Growth, 285(4),
450-8, (2005)
- Papier régulier
|
⋄ Faceting and structural anisotropy of nanopatterned CdO (110) layers
J. Zúñiga-Pérez, C. Martinez-Tomas, V. Muñoz-Sanjosé, C. Munuera, C. Ocal, M. Laügt
J. Appl. Phys., 98,
034311, (2005)
- Papier régulier
|
⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)
S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth, 280,
44-53, (2005)
- Papier régulier
|
⋄ Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures
P. Vennéguès, Z. Bougrioua, J.M. Bethoux, M. Azize, O. Tottereau
J. Appl. Phys., 97,
4912, (2005)
- Papier régulier
|
⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing
M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC, 151(5),
433-436, (2005)
- Article de conférence
|
⋄ Free energy and capture cross section of the E2 trap in n-type GaN
J. Pernot, C. Ulzhöfer, P. Muret, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a), 202, No. 4,
609-613, (2005)
- Article de conférence
|
⋄ Ductile relaxation in cracked metal-organis chemical-vapor-deposition-grown AlGaN films on GaN
J.M. Bethoux and P. Vennéguès
J. Appl. Phys., 97,
123504, (2005)
- Papier régulier
|
⋄ Solar blind detectors based on AlGan grown on sapphire
J.Y. Duboz, N. Grandjean, F. Omnès, J.L. Reverchon, M. Mosca
Phys. Stat. Sol. (c), N3,
964-971, (2005)
- Article de conférence - invité
|
⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities
H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski
Proc. 9th Ann. Nanophys. Nanoel. Symp., ,
338-339, (2005)
- Article de conférence
|
⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111)
N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys, 44,
4902, (2005)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Submicron periodic poling and chemical patterning of GaN
S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies
Appl. Phys. Lett., 87,
062106, (2005)
- Papier régulier
|
⋄ Surface morphology of AlN and size dispersion of GaN quantum dots
A. Matsuse, N. Grandjean, B. Damilano Et J. Massies
J. Cryst. Growth, 274,
387, (2005)
- Papier régulier
|
⋄ Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates
C. Renard, X. Marcadet, J. Massies Et O. Parillaud
J. Cryst. Growth, 278,
193, (2005)
- Papier régulier
|
⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,
2187-2190, (2005)
- Article de conférence
|
⋄ Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulkcrystals and heterostructures of GaN
K. Jarašiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudžius, S. Miasojedovas, S. Juršenas, A. Žukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, and B. Beaumont
Phys. Stat. Sol. (c), 2, No. 3,
1006– 1009, (2005)
- Article de conférence
|
⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy
F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm., 132,
679, (2004)
- Papier régulier
|
⋄ Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC
A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos
Electrochem. Solid-State Lett., 7,
F93, (2004)
- Papier régulier
|
⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36,
659, (2004)
- Article de conférence
|
⋄ Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs
A. Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laügt
Microelectronics Journal, 35:11,
875-880, (2004)
- Papier régulier
|
⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12,
2779-2782, (2004)
- Article de conférence
|
⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy
B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies
IEE Proc.-Optoelectron., 151, No. 5,
433-436, (2004)
- Article de conférence
|
⋄ Potentialities of GaN-based microcavities in strong coupling regime at room temperature
N. Ollier, F. Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond, J. Massies
Superlattices Microstruct., 34,
599-606, (2004)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Optical properties of edge emitting semiconductor laser diodes with coated Bragg mirror
J. Kovác, F. Uherek, D. Pudis, V. Gottschalch, G. Leibiger, T. Gühne, and B. Rheinländer
IEEE conference proceedings, ,
, (2004)
- Article de conférence
|
⋄ Efficiency optimization of p-type doping in GaN:Mg layers grown by Molecular-Beam Epitaxy
F. B. Naranjo, E. Calleja, Z. Bougrioua, A. Trampert, X. Kong, K. H. Ploog
J. Cryst. Growth, 270, issues 3-4,
815-823, (2004)
- Papier régulier
|
⋄ Anisotropic propagation of surface acoustic waves on nitride layers
J. Pedrós, F. Calle, J. Grajal, R.J. Jiménez Riobóo, C. Prieto, J.L. Pau, J. Pereiro, M. Hermann, M. Eickhoff and Z. Bougrioua,
Superlattice Microst, 36, Issues 4-6,
815-823, (2004)
- Article de conférence
|
⋄ Performances of AlGaN/GaN HEMTs in Planar Technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger, C. Gaquière
Proc. 12th GaAs and other Comp. Sem. Appl. Symp., ,
303-306, (2004)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Polarity inversion of GaN(0001) by a high Mg doping
S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies
J. Cryst. Growth, 269,
249, (2004)
- Papier régulier
|
⋄ Highly regular nanometer-sized hexagonal pipes in 6H-SiC
W. Wulfhekel, D. Sander, S. Nitsche, A. Leycuras and M. Hanbücken
Applied Physics A, 79,
411-413 1, (2004)
- Papier régulier
|
⋄ Electrical characterisation of hole traps in n-type GaN
F. D. Auret, W. E. Meyer, L. Wu, M. Hayes, M. J. Legodi, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a), 201(10),
2271-2276, (2004)
- Article de conférence
|
⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties
M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257,
259-262, (2004)
- Article de conférence
|
⋄ Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors
R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A.D. Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 27(1-3),
293-6, (2004)
- Papier régulier
|
⋄ Multilayer (Al,Ga)N structures for solar-blind detection
M. Mosca, J.L. Reverchon, N. Grandjean, J.Y. Duboz
IEEE J. Selec. Topics in Quant. Electronics, 10,
752, (2004)
- Papier régulier
|
⋄ GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties
C. Grazzi, A. Castaldini, A. Cavallini, H.P.D. Schenk, P. Gibart, and H. P. Strunk
Eur. Phys. J. Appl. Phys., 27,
193, (2004)
- Papier régulier
|
⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride
S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234,
445, (2004)
- Article de conférence
|
⋄ Plastic relaxation through buried cracks in AlGaN/GaN heterostructures
J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry
Eur. Phys. J. Appl. Phys., 257,
263-265, (2004)
- Papier régulier
|
⋄ Structural reorganisation of vicinal surfaces on 6H-SiC(0001) induced by hot hydrogen etching
W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras, M. Hanbucken
Applied Surface Science, 234 (1-4),
251-255, (2004)
- Papier régulier
|
⋄ Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes
J. M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J. L. Sánchez-Rojas, and E. Calleja
Appl. Phys. Lett., 85,
40, (2004)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-UV
J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schule, E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart
J. Appl. Phys., 95,
8275, (2004)
- Papier régulier
|
⋄ Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pecz, P. Gibart, B. Beaumont
J. Appl. Phys., 96,
799-806, (2004)
- Papier régulier
|
⋄ Thermal characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and an pulsed I-V measurements
R. Aubry, J.C. Jacquet, C. Dua, H. Gérard, B. Dessertenne, M.A. Di Forte-Poisson, Y. Cordier and S.L. Delage
Mat. Sci. For., 457-460,
1625-1628, (2004)
- Article de conférence
|
⋄ Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown Si (100) substrates
T. Chassagne, G. Ferro, H. Haas, A. Leycuras, H. Mank, Y. Monteil
Mat. Sci. For., 457-460,
265-268, (2004)
- Article de conférence
|
⋄ Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal
T. Chassagne, A. Leycuras, C. Balloud, P. Arcade, H. Peyre, S. Juillaguet
Mat. Sci. For., 457-460,
273-276, (2004)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Low frequency noise behavior in GaN HEMT's on silicon substrate
L. Bary, E. Angeli, A. Rennane, G. Soubercaze-Pun, J.G. Tartarin, A. Minko, V. Hoel, Y. Cordier, C. Dua, R. Plana, J. Graffeuil
Proc. SPIE, 5470,
286-295, (2004)
- Article de conférence
|
⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96,
180, (2004)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Phonon deformation potential in hexagonal GaN
F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,
155215, (2004)
- Papier régulier
|
⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates
A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4,
167-169, (2004)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy
H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, S. Grzanka, M. Krysko, P. Prystawko, P. Wisniewski, M. Leszczynski, G. Franssen, J. Muszalski, T. Suski, and P. Perlin
Phys. Stat. Sol. (c), 1,
193, (2004)
- Article de conférence
|
⋄ Spectroscopy of the electron states in self-organized GaN/AlN quantum dots
A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean
Phys. Stat. Sol. (c), 1, Issue 6,
1456-1460, (2004)
- Article de conférence
|
⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,
125329, (2004)
- Papier régulier
|
⋄ Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
M. Mosca, J.L. Reverchon, F. Omnès, J.Y. Duboz
J. Appl. Phys., 95,
4367, (2004)
- Papier régulier
|
⋄ Internal photoemission in solar blind AlGaN Schottky barrier photodiodes
J.Y. Duboz, N. Grandjean, F. Omnès, M. Mosca, J.L. Reverchon
Appl. Phys. Lett., 86,
063511, (2004)
- Papier régulier
|
⋄ From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction
T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié
Phys. Rev. B, 69,
073303, (2004)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean
J. Cryst. Growth, 262, Issues 1-4,
145-150, (2004)
- Article de conférence
|
⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature
F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc., 798,
613-18, (2004)
- Article de conférence
|
⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects
C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu
Phys. Stat. Sol. (b), 241 (3),
631, (2004)
- Article de conférence
|
⋄ Regular step formation on concave-shaped surfaces on 6H–SiC(0 0 0 1)
W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras and M. Hanbücken,
Surf. Sci., 550,
8, (2004)
- Papier régulier
|
⋄ Electronic properties of deep defects in n-type GaN
P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron
Superlattice Microst, 36,
435-443, (2004)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Symmetry aspects of exciton–exciton interactions and biexciton transitions in wurtzite semiconductor structures
P. Tronc, Yu. E. Kitaev, V. P. Smirnov, M. Jacobson, G. Neu
Phys. Stat. Sol. (b), 241,
321, (2004)
- Article de conférence
|
⋄ Optical and structural characterization of self-organized stacked GaN/AlN quantum dots
G. Salviati, F. Rossi, N. Armani, V. Grillo, O. Martinez, A. Vinattieri, B. Damilano, A. Matsuse, N. Grandjean
J. Phys.: Condens. Matter, 16(2),
S115-26, (2004)
- Papier régulier
|
⋄ High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD
J.Y.Duboz, J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès,
Mater. Res. Soc. Symp. Proc., 798,
47-51, (2004)
- Article de conférence
|
⋄ Electronic structure of wurtzite and zinc-blende AlN
P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette
Eur. Phys. J. B, 42,
351, (2004)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation
P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, J. Massies
Phys. Rev. B, 69,
35307, (2004)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Metal organic vapour phase epitaxy of GaN and lateral overgrowth
P. Gibart
Reports on Progress in Physics, 67(5),
667-715, (2004)
- Papier régulier
|
⋄ Origin of power fluctuations in GaN resonant-cavity light-emitting diodes
B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, M.A. Poisson
Optics Express, 12,
736, (2004)
- Papier régulier
|
⋄ Atomic structure of pyramidal defects in Mg-doped GaN
P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68,
235214, (2003)
- Papier régulier
|
⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector
D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys, 42, Part 2, No. 12B,
L1509, (2003)
- Papier régulier
|
⋄ Isoelecrtonic traps in heavily doped GaAs:(In,N)
R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié
Phys. Rev. B, 68,
235202, (2003)
- Papier régulier
|
⋄ 60-GHz high power performance In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMTs on GaAs
M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte and D. Théron
IEEE Electron Device Letters, 24 N°12,
724–726, (2003)
- Papier régulier
|
⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), 0(7),
2666-2669, (2003)
- Article de conférence
|
⋄ Indium surface segregation in AlSb and GaSb
C. Renard, X. Marcadet, J. Massies, I. Prévot, R. Bisaro, P. Galtier
J. Cryst. Growth, 259,
69, (2003)
- Papier régulier
|
⋄ Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy
H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen
J. Cryst. Growth, 258,
232, (2003)
- Papier régulier
|
⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68,
205301, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Atomic structure determination of the Si-rich beta -SiC(001) 3*2 surface by grazing-incidence x-ray diffraction: a stress-driven reconstruction
M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, M. Noblet, S. Chiang, F. Semond
Phys. Rev. B, 68(16),
165321-1-8, (2003)
- Papier régulier
|
⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94,
6499, (2003)
- Papier régulier
|
⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy
H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche
Appl. Phys. Lett., 83,
5139, (2003)
- Papier régulier
|
⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon
N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B, 68(15),
153313, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Cubic SiC surface structure studied by X-ray diffraction
M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, L. Di-Cioccio, T. Billion
Mat. Sci. For., 433-436,
571-4, (2003)
- Article de conférence
|
⋄ Failure analysis of a cascade laser structure by electrostatic force microscopy
M. Azize, P. Girard, M. Teisseire, A. Baranov and A. Joullie
Journal of Vaccum Science Technology B, 21(5),
10.1116/1.1609478, (2003)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Origins of GaN(0001) Surface Reconstructions
S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541,
242, (2003)
- Papier régulier
|
⋄ An X-ray and TEM study of inhomogeneous ordering in AlxGa1-xN layers grown by MOCVD
M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
J. of Physics and Chemistry of Solids, 64,
1653-1656, (2003)
- Article de conférence
|
⋄ Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction
H. Enriquez, M. D'angelo, V.Yu. Aristov, V. Derycke, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond
J. Vac. Sci. Technol. B, 21(4),
1881-5, (2003)
- Papier régulier
|
⋄ Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers
S. Kret, G. Maciejewski, P. Dluzewski, P. Ruterana, N. Grandjean, and B. Damilano
Materials Chemistry and Physics, 81,
273, (2003)
- Article de conférence
|
⋄ Carrier mobility versus carrier density in AlGaN/GaN quantum wells
J.L. Farvacque and Z. Bougrioua
Phys. Rev. B, 68,
035335, (2003)
- Papier régulier
|
⋄ Annealing effects on the crystal structure of GaInNAs quantum wells with large in and N content grown by molecular beam epitaxy
A. Hierro, J.M. Ulloa, J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, A. Guzman, J.L. Sanchez-Rojas, E. Calleja
J. Appl. Phys., 94,
2319, (2003)
- Papier régulier
|
⋄ UV metal semiconductor metal detectors
J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès, F. Semond, J.Y. Duboz, L. Hirsch
Proc. of NATO Conference, ,
, (2003)
- Article de conférence
|
⋄ Influence of high excitation on excitonic states in GaN/AlGaN quantum wells
D-K. Nelsion, M-A. Jacobson, N. Grandjean, J. Massies, P. Bigenwald, A. Kavokin
Proc. SPIE, 5023,
, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Improved AlGaN/GaN High Electron Mobility Transistors using AlN interlayers
A. Jiménez, Z. Bougrioua, J. M. Tirado, A. F. Braña, E. Calleja, E. Muñoz, I. Moerman
Appl. Phys. Lett., 82,
4827, (2003)
- Papier régulier
|
⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys., 22(2),
77-82, (2003)
- Papier régulier
|
⋄ Detailed interpretation of electron transport in n-GaN
C. Mavroidis, J. J. Harris, M. J. Kappers, C. J. Humphreys, Z. Bougrioua
J. Appl. Phys., 93,
9095, (2003)
- Papier régulier
|
⋄ Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
J.M. Chauveau, A. Trampert, K.H. Ploog, M.A. Pinault, E. Tournié
Appl. Phys. Lett., 82,
3451, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots
A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang
Physica E, 17,
60, (2003)
- Papier régulier
|
⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density
R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7),
626-628, (2003)
- Papier régulier
|
⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells
A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E, 17,
64, (2003)
- Papier régulier
|
⋄ Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, K. Du, K.H. Ploog
J. Cryst. Growth, 251,
383, (2003)
- Papier régulier
|
⋄ Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys
O. Pages, T. Tite, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Appl. Phys. Lett., 82,
2808, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates
N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys., 93(9),
5222-5226, (2003)
- Papier régulier
|
⋄ In surface segregation in InGaN/GaN quantum wells
A. Dussaigne, B. Damilano, N. Grandjean, J. Massies
J. Cryst. Growth, 251,
471, (2003)
- Papier régulier
|
⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4,
811-815, (2003)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
Y. Cordier, P. Lorenzini, J.M. Chauveau, D. Ferré, Y. Androussi, J. Dipersio, D. Vignaud, J.L.Codron
J. Cryst. Growth, 251, Issues 1-4,
822-826, (2003)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
J.M. Chauveau, Y. Cordier, H.J. Kim, D. Ferré, Y. Androussi and J. Di Persio
J. Cryst. Growth, 251, Issues 1-4,
112-117, (2003)
- Article de conférence
|
⋄ LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys
T. Tite, O. Pages, M. Ajjoun, J.P. Laurenti, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Solid State Electronics, 47,
455, (2003)
- Papier régulier
|
⋄ Photoluminescence spectroscopie of Ga(In)NAs quantum wells for emission at 1.5 µm
M.A Pinault, E. Tournié
Solid State Electronics, 47,
477, (2003)
- Papier régulier
|
⋄ Ordering in undoped hexagonal AlxGa1-xN grown on sapphire (0001) with 0.09 < x < 0.247
M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
Phys. Stat. Sol. (b), 236 No 3,
729-739, (2003)
- Papier régulier
|
⋄ Power Results at 4GHz of AlGaN/GaN HEMTs on High Resistive Silicon (111) substrate
N. Vellas, C. Gaquière, A. Minko, V. Hoël, J.C. De Jaeger, Y. Cordier, and F. Semond
IEEE Microwave and Wireless Components Letters, 13, n°3,
99-101, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
J.M. Chauveau, Y. Androussi, A. Lefebvre, J. Di Persio, and Y. Cordier
J. Appl. Phys., 93, Issue 7,
4219-4225, (2003)
- Papier régulier
|
⋄ GaN based UV photodetectors
F. Omnès, E. Monroy
Nitride Semiconductors, Handbook on Materials and Devices, 13,
, (2003)
- Livres et chapitres de livres
|
⋄ GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 mm
E. Tournié, M.A. Pinault, M. Laügt, J.M. Chauveau, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 82,
1845, (2003)
- Papier régulier
|
⋄ Wide-bandgap semiconductor ultraviolet detectors
E. Monroy, F. Omnès, F. Calle
Semicond. Sci. Tech., 18,
R33, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Evidence of an impurity band at an n-GaN/sapphire interface
C. Mavroidis, J.J. Harris, R.B. Jackman, Z. Bougrioua, I. Moerman
Diamond and Related Materials, 12, issues 3-7,
1127–1132, (2003)
- Article de conférence
|
⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm
K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies
Appl. Phys. Lett., 82,
868, (2003)
- Papier régulier
|
⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)
F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9),
1386, (2003)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ RBS studies of AlGaN/AlN Bragg reflectors
L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a), 195, No.3,
502-507, (2003)
- Article de conférence
|
⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities
N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a), 195, No.3,
543-550, (2003)
- Article de conférence
|
⋄ High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures
Ch. Consejo, L. Konczewicz, S. Contreras, S. Lepkowsky, M. Zielinski, J.L. Robert, P. Lorenzini, Y. Cordier
Phys. Stat. Sol. (b), 235 (2),
232-237, (2003)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
J.L. Bubendorff, N. Grandjean, B. Damilano, M. Troyon
J. Cryst. Growth, 247,
284, (2003)
- Papier régulier
|
⋄ Photodétecteurs pour l'ultraviolet
F. Omnès, E. Monroy
Détecteurs optoélectroniques, 6,
171-204, (2003)
- Livres et chapitres de livres
|
⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters
D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666,
178, (2003)
- Article de conférence
|
⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys., 93(1),
400-9, (2003)
- Papier régulier
|
⋄ Les nitrures d’éléments III
M. Leroux
Matériaux pour l’Optoélectronique, ,
, (2003)
- Livres et chapitres de livres
|
⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett., 82,
499, (2003)
- Papier régulier
|
⋄ Engineering of an Insulating Buffer and Use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures
Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, E.T. Palacios, F. Calle, M. Leroux
Phys. Stat. Sol. (a), 195, No. 1,
93, (2003)
- Article de conférence
|
⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon
J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42,
118, (2003)
- Papier régulier
|
⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems
A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc., 743,
L5.5, (2003)
- Article de conférence
|
⋄ Wide-bandgap semiconductor ultraviolet photodetectors (Topical review)
E. Monroy, F. Omnès, F. Calle
Semicond. Sci. Tech., 18,
R33-R51, (2003)
- Papier régulier
|
⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots
A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin
Mater. Res. Soc. Symp. Proc., 7,
169, (2003)
- Article de conférence
|
⋄ Solar blind AlGaN Metal-Semiconducteur-Metal Devices for High Performance Flame Detection
M. Mosca, J.L. Reverchon, N. Grandjean, F. Omnès, J.Y. Duboz, I. Ribet, M. Tauvy
Mater. Res. Soc. Symp. Proc., 764,
C4-4-1, (2003)
- Article de conférence
|
⋄ Incorporation of Dielectric Layers into the Processing of III-Nitride Based Heterostructure Field Effect Transistors
D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bhir and J. Salzman
J. Electron. Mat., 32, 5,
355, (2003)
- Papier régulier
|
⋄ Indium distribution inside quantum wells: The effect of growth interruption in MBE
A.M. Sanchez, P. Ruterana, S. Kret, P. Dluzewski, G. Maciejewski, N. Grandjean, B. Damilano
Mater. Res. Soc. Symp. Proc., 743,
L5.6, (2003)
- Article de conférence
|
⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1,
61, (2002)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures
G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko
Phys. Stat. Sol. (b), 235,
20, (2002)
- Article de conférence
|
⋄ Vibrational evidence for percolative effect in Zn1-xBexSe/GaAs
O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b), 229,
25, (2002)
- …
|
⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon
M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234,
887, (2002)
-
|
⋄ Influence of surface treatments on DC performance of GaN-based HFETs
T.D. Mistele, T. Rotter, Z. Bougrioua, M. Marso, H. Roll, H. Klausing, F. Fedler, O.K. Semchinova, J. Aderhold, I. Moerman, J. Graul
Phys. Stat. Sol. (a), 194 N°2,
452, (2002)
-
|
⋄ Relation between microstructure and 2DEG properties in AlGaN/GaN structures
B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b), 234 N°3,
830, (2002)
- …
|
⋄ Silicon effect on GaN surface morphology
Z. Benzarti, I. Halidou, O. Tottereau, T. Boufaden, B. El Jani
Microelectronics Journal, 33(11),
995-998, (2002)
- …
|
⋄ Free carrier mobility in AlGaN/GaN quantum wells
J.L. Farvacque, Z. Bougrioua, F. Carosella, I. Moerman
J. Phys.: Condens. Matter, 14,
13319, (2002)
- Papier régulier
|
⋄ Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andres
Phys. Stat. Sol. (a), 188,
307, (2002)
- …
|
⋄ 200 Mbit/s Data Transmission through 100 Meters of Plastic Optical Fibre with Nitride LEDs
M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont, and K. Panzer
Electron. Lett., 38,
1457, (2002)
- Papier régulier
|
⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92,
5602, (2002)
- Papier régulier
|
⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)
F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys, 41(10B),
L1140-2, (2002)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart
Appl. Phys. Lett., 75,
2587, (2002)
- Papier régulier
|
⋄ High responsivity submicron metal-semiconductor-metal ultraviolet detectors
T. Palacios, E. Monroy, F. Calle, F. Omnès
Appl. Phys. Lett., 81,
3198, (2002)
- Papier régulier
|
⋄ High linearity performances of GaN HEMT devices on silicon substrate at GHz
N. Vellas, C. Caquiere, Y. Guhel, M. Werquin, F. Bue, R. Aubry, S. Delage, F. Semond, J.C. De Jaeger
IEEE Electron Device Letters, 23(8),
461, (2002)
- Papier régulier
|
⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN
M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192,
394, (2002)
- Article de conférence
|
⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes
S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a), 192(1),
139-143, (2002)
- …
|
⋄ Vertical cavity InGaN LEDs grown by MOVPE
P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a), 192,
335, (2002)
- Article de conférence
|
⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate
V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38,
750, (2002)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Impact of the defects on the electrical and optical properties of AlGaN ultraviolet detectors
M. Hanzaz, A. Bouhdada, P. Gibart, F. Omnès
J. Appl. Phys., 92(1),
13, (2002)
- Papier régulier
|
⋄ Atomic force microscopy study of the polymer growth in a polymer stabilized liquid crystal
H. Guillard, P. Sixou, O. Tottereau
Polym. Adv. Technol., 13,
491, (2002)
- …
|
⋄ Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction
P.A. Shields, R.J. Nicholas, K. Takashina, N. Grandjean, J. Massies
Phys. Rev. B, 65,
195320, (2002)
- Papier régulier
|
⋄ Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures
A. Jimenez, E. Calleja, E. Muñoz, M. Varela, C. Ballesteros, U. Jahn, K. Ploog, F. Omnès, P.Gibart
Mat. Sci. Eng. B, 93,
64, (2002)
- …
|
⋄ In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies
Mat. Sci. Eng. B, 93,
150, (2002)
-
|
⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN
P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93,
224, (2002)
- Article de conférence
|
⋄ Assessment of GaN metal-semiconductor-metal for high-energy ultraviolet photodetection
E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, J.F. Hochedez
Appl. Phys. Lett., 80,
1902, (2002)
- Papier régulier
|
⋄ Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate
S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy
Electron. Lett., 38 N°8,
389, (2002)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Full Si wafer conversion into bulk 3C-SiC
A. Leycuras, O. Tottereau, P. Vicente, L. Falkovsky, P. Girard, J. Camassel
Mat. Sci. For., 389-393,
147, (2002)
- …
Article en ligne (HAL) : cliquez ici...
|
⋄ Photoluminescence of GaN microcrystallites prepared by a new solvothermal process
C. Collado, G. Goglio, G. Demazeau, A.S. Barriere, L. Hirsch, M. Leroux
Mat. Res. Bull., 37,
841, (2002)
-
Article en ligne (HAL) : cliquez ici...
|
⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector
L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91,
6095, (2002)
- Papier régulier
|
⋄ Modelling and spectroscopy of GaN microcavities
N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 190,
187, (2002)
- Article de conférence
|
⋄ Recent progress of the BOLD investigation towards UV detectors for the ESA Solar Orbiter
J.F. Hochedez, J. Alvarez, F.D. Auret, P. Bergonzo, M.C. Castex, A. Deneuville, J.M. Defise, B. Fleck, P. Gibart, S.A. Goodman, O. Hainaut, J.P. Kleider, P. Lemaire, J. Manca, E. Monroy, E. Muñoz, P. Muret, M. Nesladek, F. Omnès, E. Pace, J.L. Pau, V. Ral
Diamond and Related Materials, 11,
427, (2002)
-
|
⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a), 190,
149, (2002)
-
|
⋄ Exciton oscillator strength in GaN/AlGaN quantum wells
M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Stat. Sol. (a), 190,
129, (2002)
-
|
⋄ Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,
135, (2002)
-
|
⋄ The GaN yellow luminescence center observed using optoelectronic modulation spectroscopy
C.H. Chiu, F. Omnès, C. Caquiere, P. Gibart, J.G. Swanson
Journ. of Physics D, 35,
609, (2002)
- Papier régulier
|
⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells
A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,
87, (2002)
- Article de conférence
|
⋄ Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
W. Knap, E. Borovitskaya, M.S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewsk, P. Prystawko, M. Leszczynski, I. Grzegory
Appl. Phys. Lett., 80,
1228, (2002)
- Papier régulier
|
⋄ Structure and morphology of concave-shaped surfaces on 6H-SiC(0001) after H2 etching
F. Dulot, L. Mansour, A. Leycuras, W. Wulfhekel, D. Sander, F. Arnaud D'avitaya, M. Hanbucken
Applied Surface Science, 187,
219, (2002)
- …
|
⋄ Raman scattering in GaN pillar arrays
F. Demangeot, J. Gleize, J. Frandon, M.A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, N. Grandjean
J. Appl. Phys., 91,
2866, (2002)
- Papier régulier
|
⋄ Properties of a hole trap in n-type hexagonal GaN
P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
J. Appl. Phys., 91(5),
2998, (2002)
- Papier régulier
|
⋄ Vibrational evidence for percolative effect in ZnBeSe
O. Pages, M. Aijoun, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B, 65,
035213, (2002)
- Papier régulier
|
⋄ Displaced substitutional phosphorus acceptors in zinc selenide
D. Wolverson, J.J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, K. Ohkawa, D. Hommel, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b), 229,
257, (2002)
- …
|
⋄ Self compensation of the phosphorus acceptor in ZnSe
D. Seghier, H. Gislasson, C. Morhain, M. Teisseire, E. Tournié, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229,
251, (2002)
- …
|
⋄ Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers
C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229,
881, (2002)
- …
|
⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE
Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett., 38(2),
91, (2002)
- Papier régulier
|
⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire
F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie
Phys. Stat. Sol. (b), 229,
931, (2002)
- Article de conférence
|
⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,
155, (2002)
- Article de conférence
|
⋄ AlGaN/GaN HEMTS: material, processing, and characterization
F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdu, Z. Bougrioua, I. Moerman
J Mater Sci, 14, n° 5/7,
271–277, (2002)
-
|
⋄ Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films
R.J. Jimenez Rioboo, E. Rodriguez-Canas, M. Vila, C. Prieto, F. Calle, T. Palacios, M.A. Sanchez, F. Omnès, O. Ambacher, B. Assouar, E. Elmazria
J. Appl. Phys., 92(11),
6869, (2002)
- Papier régulier
|
⋄ Interplay between Ga-N and Al-N sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy
A.L. Alvarez, F. Calle, E. Monroy, J.L.Pau, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, F. Omnès, P. Gibart, P.R. Hageman
J. Appl. Phys., 92(1),
223, (2002)
- Papier régulier
|
⋄ Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N
E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F.J. Sanchez, M.T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman
Semicond. Sci. Tech., 17,N°9,
L47, (2002)
- Papier régulier
|
⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett., 80,
428, (2002)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers
C. Mavroidis, J.J. Harris, R.B. Jackman, I. Harrison, N.J. Ansell, Z. Bougrioua, I. Moerman
J. Appl. Phys., 91,
9835, (2002)
- Papier régulier
|
⋄ Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation
S.P. Lepkowski, T. Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies
J. Appl. Phys., 91,
9622, (2002)
- Papier régulier
|
⋄ Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)
D. Sander, W. Wulfhekel, M. Hanbucken, S. Nitsche, J.P. Palmari, F. Dulot, F.A. D'avitaya, A. Leycuras
Appl. Phys. Lett., 81 (19),
3570-3572, (2002)
- Papier régulier
|
⋄ Evidence for alloy formation in dilute GaAs:N compounds
E. Tournié, G. Neu, M. Teisseire, M.A. Pinault, M. Laügt
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171,
27, (2002)
- Article de conférence
|
⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy
H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett., 80,
174, (2002)
- Papier régulier
|
⋄ Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
I. Prevot, B. Vinter, X. Marcadet, J. Massies
Appl. Phys. Lett., 81,
3362, (2002)
- Papier régulier
|
⋄ Growth of gallium nitride epitaxial layers by metal organics vapour phase epitaxy and applications
B. Beaumont, F. Omnès, P. De Mierry, P. Gibart
Vide Science, Technique et Applications, 3-4,
553, (2002)
- …
|
⋄ Sub-micron technology in group-III nitrides : application to electronic devices
T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnès, Z.Bougrioua, E. Muñoz
Proc. 11th Europ.Heterostructure Technology Work., ,
, (2002)
- …
|
⋄ AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments
D. Mistele, T. Rotter, Z. Bougrioua, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul
Mater. Res. Soc. Symp. Proc., 693,
I6.51.1, (2002)
- …
|
⋄ Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors
T. Palacios, E. Monroy, F. Calle, F. Omnès
Proc. of the IEEE Device Research Conf., ,
141, (2002)
- …
|
⋄ On the effect of high Mg doping on the polarity of GaN
P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean
Institute of Physics Conferences Series, n°169,
307, (2002)
- Article de conférence
|
⋄ Nuclear microprobe analysis of GaN bases light emitting diodes
L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz
Phys. Stat. Sol. (a), 188,
171, (2001)
- …
Article en ligne (HAL) : cliquez ici...
|
⋄ Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers
C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b), 228,
579, (2001)
- …
|
⋄ Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy
H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche
Phys. Stat. Sol. (a), 188,
537, (2001)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
|
⋄ Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe
J.J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel,E. Tournié, J.P. Faurie
Phys. Rev. B, 64,
205-206, 1, (2001)
- Papier régulier
|
⋄ Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,
839, (2001)
- …
|
⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields
D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,
851, (2001)
- …
|
⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect
P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b), 228,
65, (2001)
- …
|
⋄ Reliability of Schottky contacts on AlGaN
E. Monroy, F. Calle, T. Palacios, J. Sanchez-Osorio, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana
Phys. Stat. Sol. (a), 188,
367, (2001)
- …
|
⋄ Minority Carrier Diffusion Lengths in silicon doped gallium nitride thin films measured by electron beam induced current
C. Grazzi, M. Albrecht, H.P. Strunk, Z. Bougrioua, I. Moerman
Solid State Phenomena, 82-84,
807, (2001)
- …
|
⋄ Donor spectroscopy in wurtzite GaN heterostructures
G. Neu, M. Teisseire-Doninelli, C. Morhain
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171,
19, (2001)
- Article de conférence
|
⋄ MBE-grown high-quality (Al,Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs
S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Semicond. Sci. Tech., 16,
913, (2001)
- Papier régulier
|
⋄ High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE
S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 79,
2136, (2001)
- Papier régulier
|
⋄ Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultra-violet photodetection
F. Vigué, E. Tournié, J.P. Faurie
IEEE J. Quant. Electr., 37(9),
1146, (2001)
- Papier régulier
|
⋄ Deuterium diffusion in Mg-doped GaN layers grown by MOVPE
P. Theys, Z. Teukam, F. Jomard, P. De Mierry, A.Y. Polyakov, M. Barbe
Semicond. Sci. Tech., 16,
L53, (2001)
- Papier régulier
|
⋄ Free-carrier effects in gallium n itride epilayers : valence-band dispersion
P.A. Shields, R.J. Nicholas, F.M. Peeters, B. Beaumont, P. Gibart
Phys. Rev. B, 64,
081203, (2001)
- Papier régulier
|
⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Phys. Rev. B, 64,
115319, (2001)
- Papier régulier
|
⋄ Guided elastic waves in GaN on sapphire
S. Camou, Th. Pastureaud, H.P.D. Schenk, S. Ballandras, and V. Laude
Electron. Lett., 37,
1053, (2001)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates
F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie
Appl. Phys. Lett., 79,
194, (2001)
- Papier régulier
|
⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties
B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth, 227/228,
466, (2001)
- …
|
⋄ Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy
E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart
Jpn. J. Appl. Phys, 40,
L738, (2001)
- …
|
⋄ Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy
P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
Mat. Sci. Eng. B, 82,
91, (2001)
- …
|
⋄ Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 224,
53, (2001)
- …
|
⋄ Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : spectroscopic characterization and dislocation contrasts
S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart
J. Appl. Phys., 89,
3736, (2001)
- Papier régulier
|
⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,
1538, (2001)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications
F. Semond, Y. Cordier, N. Grandjean et al.
Phys. Stat. Sol. (a), 188 (2),
501-510, (2001)
- Article de conférence - invité
|
⋄ Dielectric microcavity in GaN/Si
J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a), 183,
35, (2001)
- …
|
⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields
M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183,
61, (2001)
- …
|
⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111)
F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 183,
163, (2001)
- …
|
⋄ Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Daudin, N. Grandjean
Phys. Stat. Sol. (a), 183,
157, (2001)
- …
|
⋄ Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells
D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183,
129, (2001)
- …
|
⋄ Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy
L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183,
139, (2001)
- …
|
⋄ Zn(MgBe)Se ultraviolet photodetectors
F. Vigué, J.P. Faurie
J. Electron. Mat., 30,
662, (2001)
- …
|
⋄ Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors
G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet
Physica B, 302-303,
39, (2001)
- …
|
⋄ (Al,Ga)N ultraviolet detectors on sapphire and Si substrates
E. Muñoz, E. Monroy, J.L. Pau, F. Calle, M.A. Sanchez, E. Calleja, F. Omnès, B. Beaumont, P. Gibart
Proc. WOCSDICE, ,
XV-5, (2001)
- …
|
⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie
J. Appl. Phys., 90,
5115, (2001)
- Papier régulier
|
⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia
T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Sol. Stat. Comm., 117,
445, (2001)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ 2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE
Z. Bougrioua, J.L. Farvaque, I. Moerman, F. Carosella
Phys. Stat. Sol. (b), 228,
625, (2001)
- …
|
⋄ Raman study of ZnxBe1-xSe solid solutions
O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, O. Gorochov, C. Chauvet, E. Tournié, J.P. Faurie
Optical Matérials, 17(1-2),
323, (2001)
- …
|
⋄ Group-III nitride quantum heterostructures grown by molecular beam epitaxy
N. Grandjean, B. Damilano, J. Massies
J. Phys.: Condens. Matter, 13,
6945, (2001)
- Papier régulier
|
⋄ Silicon nitride passivation effects on GaN MESFET
C. Gaquiere, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, J.C. De Jaeger, F. Omnès
Proc. WOCSDICE, ,
VIII-11, (2001)
- …
|
⋄ Growth of GaN on (111) Si : a route towards self-supported GaN
H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart
J. Cryst. Growth, 231,
329, (2001)
- …
|
⋄ Influence of alloy stability on the photoluminescence properties of GaAs//GaAs quantum wells grown by molecular-beam epitaxy
M.A. Pinault, E. Tournié
Appl. Phys. Lett., 79,
3404, (2001)
- Papier régulier
|
⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization
M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For., 353-356,
795, (2001)
- …
|
⋄ Surface morphology of GaN grown by molecular beam epitaxy
S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82,
56, (2001)
- …
|
⋄ Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart
Mat. Sci. Eng. B, 82,
163, (2001)
- Article de conférence
|
⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible spectrum
B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82,
224, (2001)
- …
|
⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B, 82,
256, (2001)
- …
|
⋄ On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells
M.A. Pinault, E. Tournié
Appl. Phys. Lett., 78(11),
1562, (2001)
- Papier régulier
|
⋄ Core structure of dislocations in GaN revealed by transmission electron microscopy
T. Remmele, M. Albrecht, H.P. Strunk, A.T. Blumenau, M.I. Heggie, J. Elsner. T. Frauenheim, H.P.D. Schenk, and P. Gibart
Proc. Royal Microsc. Soc. Conf., ,
323-326, (2001)
- Article de conférence
|
⋄ Epitaxial Lateral Overgrowth of GaN on Silicon (111)
E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart
Phys. Stat. Sol. (a), 188,
733, (2001)
- Article de conférence
|
⋄ Stress control in GaN grown on silicon(111) by MOPVE
E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart
Appl. Phys. Lett., 79,
3220, (2001)
- Papier régulier
|
⋄ Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells
B. Damilano, N. Grandjean, C. Pernot, J. Massies
Jpn. J. Appl. Phys, 40,
L918, (2001)
- …
|
⋄ GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy
N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Semicond. Sci. Tech., 16,
358, (2001)
- Papier régulier
|
⋄ Epitaxial Lateral overgrowth of GaN
B. Beaumont, P. Vennéguès, P. Gibart
Phys. Stat. Sol. (b), 227,
1-43, (2001)
- Papier régulier
|
⋄ Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes
F. Vigué, E. Tournié, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Appl. Phys. Lett., 78(11),
4190, (2001)
- Papier régulier
|
⋄ Crack-free thick GaN layers on silicon(111) by MOVPE
E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart
Phys. Stat. Sol. (a), 188,
531, (2001)
- Article de conférence
|
⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE
H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle
Phys. Stat. Sol. (a), 188,
899, (2001)
- Article de conférence
|
⋄ Donor and donor bound-exciton spectroscopy in wurtzite GaN heterostructures
M. Teisseire, G. Neu, C. Morhain
Phys. Stat. Sol. (b), 228,
501, (2001)
- …
|
⋄ Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices
F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras
Ann. Chim. Sci. Mater., 26,
177, (2001)
- Article de conférence
|
⋄ Wide band-gap ZnMgBeSe alloys grown onto GaAs by molecular-beam epitaxy
E. Tournié, F. Vigué, M. Laügt, J.P. Faurie
J. Cryst. Growth, 223,
461, (2001)
- …
|
⋄ Micro-Raman study of wurtzite AlN layers grown on Si(111)
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond, J. Massies
Phys. Stat. Sol. (a), 188,
511, (2001)
- …
|
⋄ Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies
P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
Phys. Rev. B, 63,
245319, (2001)
- Papier régulier
|
⋄ Impact ionization of excitons in an electric field in GaN
D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart
J. Phys.: Condens. Matter, 13,
7043, (2001)
- Papier régulier
|
⋄ III nitrides and UV detection
E. Muñoz, E. Monroy, J.L. Pau, F. Calle, F. Omnès, P. Gibart
J. Phys.: Condens. Matter, 13(32),
7115, (2001)
- Papier régulier
|
⋄ Magneto-photoluminescence of AlGaN/GaN quantum wells
P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
J. Cryst. Growth, 230 (3-4),
487, (2001)
- …
|
⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy, 202,
212, (2001)
- …
|
⋄ Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect
M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Rev. B, 64,
121304, (2001)
- Papier régulier
|
⋄ AlGaN-based UV photodetectors
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Cryst. Growth, 230 (3-4),
537, (2001)
- …
|
⋄ Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure
A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux
Phys. Rev. B, 89,
3775, (2001)
- Papier régulier
|
⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,
325, (2001)
- …
|
⋄ Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes
M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 228,
129, (2001)
- …
|
⋄ Phonon-assisted optical transitions in GaN with impurities and defects
P. Tronc, Yu. E. Kitaev, G. Wang, M.F. Limonov, G. Neu
Physica B, 302-303,
291, (2001)
- …
|
⋄ Raman mapping of epitaxial lateral overgrown GaN : stress at the coalescence boundary
M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart
J. Appl. Phys., 90,
3656, (2001)
- Papier régulier
|
⋄ Heterostructure field effect transistor types with novel gate dielectrics
D. Mistele, T. Rotter, Z. Bougrioua, K.S. Rover, F. Fedler, H. Klausing, J. Stemmer, O.K. Semchinova, J. Aderhold, J. Graul
Phys. Stat. Sol. (a), 188, N°1,
225, (2001)
- …
|
⋄ High temperature nitride sources for plastic optical fibre data buses
B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi
Proc. Tenth Int’l Plastic Optic Fibres Conf., 10,
81-87, (2001)
- Article de conférence
|
⋄ High quality p+-n+ GaAs tunnel junction diode grown by atmospheric pressure MOVPE
L. Beji, B. El Jani, P. Gibart
Phys. Stat. Sol. (a), 183,
273, (2001)
- …
|
⋄ High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy
F. Semond, P. Lorenzini, N. Grandjean, J. Massies
Appl. Phys. Lett., 82,
335, (2001)
- Papier régulier
|
⋄ Excitonic properties of ZnS quantum wells
B. Urbaszek, C.M. Townsley, X. Tang, C. Morhain, A. Balocchi, K.A. Prior, R.J. Nicholas, B.C. Cavenett
Phys. Rev. B, 64(15),
155321, (2001)
- Papier régulier
|
⋄ New form of ordering in AlGaN
P. Ruterana, G. De Saint-Jores, F. Omnès
Mat. Sci. Eng. B, 82,
203, (2001)
- …
|
⋄ Potentialities of GaN-based microcanivities grown on silicon substrates
N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 188,
519, (2001)
- …
|
⋄ Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : time evolution with low energy electron beam
S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart, J.D. Ganiere, K. Leifer
J. Appl. Phys., 89,
7966, (2001)
- Papier régulier
|
⋄ Optical properties of self-assembled InGaN/GaN quantum dots
T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82,
22, (2001)
- …
|
⋄ Modeling of absorption and emission spectra of InGaN layers grown by MBE
L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies
Mat. Sci. Eng. B, 82,
71, (2001)
- …
|
⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Mat. Sci. Eng. B, 82,
140, (2001)
- …
|
⋄ Application and performance of GaN based UV detectors
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
Phys. Stat. Sol. (a), 185(1),
91, (2001)
- …
|
⋄ Diamond UV detectors for future solar physics missions
J.F. Hochedez, P. Bergonzo, M.C. Castex, P. Dhez, O. Hainaut, M. Sacchi, J. Alvarez, H. Boyer, A. Deneuville, P. Gibart, B. Guizard, J.P. Kleider, P. Lemaire, C. Mer, E. Monroy, E. Muñoz, P. Muret, F. Omnès, J.L. Pau, V. Ralchenko, D. Tromson, E. Verwicht
Diamond and Related Materials, 10(3-7),
673, (2001)
- …
|
⋄ Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
P. Ruterana, G. De Saint Jores, M. Laügt, F. Omnès, E. Bellet-Amalric
Appl. Phys. Lett., 78(3),
344, (2001)
- Papier régulier
|
⋄ Strain state in GaN epilayers from optical experiments
E. Deleporte, C. Guenaud, M. Voos, B. Beaumont, P. Gibart
J. Appl. Phys., 89,
1116, (2001)
- Papier régulier
|
⋄ Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies
Appl. Phys. Lett., 79,
1483, (2001)
- Papier régulier
|
⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy
P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,
1252, (2001)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Characterization of electron-irradiated n-GaN
S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, P. Gibart
Appl. Phys. Lett., 78(11),
1538, (2001)
- Papier régulier
|
⋄ In-situ etching at InGaAs/GaAs quantum well interfaces
E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia
J. Cryst. Growth, 222,
471, (2001)
- …
|
⋄ Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies
J. Appl. Phys., 89,
1070, (2001)
- Papier régulier
|
⋄ Direct signature of strained GaN quantum dots by Raman scattering
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 79,
686, (2001)
- Papier régulier
|
⋄ Quantum beats of free and bound excitons in GaN
K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kkuwata-Gonokami, B. Beaumont, P. Gibart
Appl. Phys. Lett., 79,
1097, (2001)
- Papier régulier
|
⋄ Finite element analysis of epitaxial lateral overgrown GaN : voids at the coalescence boundary
M. Benyoucef, M. Kuball, G. Hill, M. Wisnom, B. Beaumont, P. Gibart
Appl. Phys. Lett., 79,
4127, (2001)
- Papier régulier
|
⋄ Photoconductance measurements and Stokes shift in InGaN alloys
J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82,
197, (2001)
- …
|
⋄ Native vacancies in N-doped and undoped ZnSe layers studied by positron annihilation
P. Desgardin, J. Oila, K. Saarinen, P. Hautojarvi, E. Tournié, J.P. Faurie, C. Corbel
Phys. Rev. B, 62,
15711, (2000)
- Papier régulier
|
⋄ TEM study of crystal defects in ZnSe/GaAs(001) epilayers
S. Lavagne, C. Levade, G. Canderschaeve, J. Crestou, E. Tournié, J.P. Faurie
J. Phys.: Condens. Matter, 12(49),
10287, (2000)
- Papier régulier
|
⋄ Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC
P. Vennéguès, H. Lahrèche
Appl. Phys. Lett., 77,
4310, (2000)
- Papier régulier
|
⋄ Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers
E. Tournié, G. Neu, M. Teisseire, J.P. Faurie, H. Pelletier, B. Theys
Phys. Rev. B, 62(19),
12868, (2000)
- Papier régulier
|
⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN
P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett., 77,
880, (2000)
- Papier régulier
|
⋄ (Al,Ga)N Ultraviolet Photodetectors and Applications
E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnès, P. Gibart
Phys. Stat. Sol. (a), 180,
293, (2000)
- …
|
⋄ ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range
F. Vigué, A. Bouille, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (a), 181(1),
301, (2000)
- …
|
⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 180,
127, (2000)
- …
|
⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures
M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald
Phys. Stat. Sol. (a), 178,
101, (2000)
- …
|
⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate
N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
J. Appl. Phys., 88,
183, (2000)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
|
⋄ Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties
C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie
Journal Electron. Mater., 29(6),
883, (2000)
- …
|
⋄ Réalisation de structures photoniques avancées
D. Peyrade, F. Carcenac, L. Manin, V. Thierry-Mieg, N. Grandjean, D. Coquillat, R. Legros, Y. Chen
J. Phys. IV France, 10,
8-125, (2000)
- …
|
⋄ Modeling of the spectral response of the AlxGa1-xN p-n junction photodetectors
M. Hanzaz, A. Bouhdada, E. Monroy, E. Muñoz, P. Gibart, F. Omnès
Eur. Phys. J. Appl. Phys., 11,
29, (2000)
- …
|
⋄ Growth of CVD thin films and thick LPE 3C-SiC in a specially designed reactor
A. Leycuras
Mat. Sci. For., 338-342,
241, (2000)
- …
|
⋄ High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO
H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart
Diamond and Related Materials, 9,
452, (2000)
- …
|
⋄ High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-ultraviolet spectral range
F. Vigue, P. De Mierry, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Electron. Lett., 36,
826, (2000)
- Papier régulier
|
⋄ Nature of the bandgap of Zn1-xBexSe alloys
C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B, 61,
5332, (2000)
- Papier régulier
|
⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films, 380,
195, (2000)
- …
|
⋄ GaN and InGaN quantum dots grown by MBE : from UV to red light emission
N. Grandjean, B. Damilano, J. Massies
Proc. of Int. Workshop on Nitride Semiconductors, ,
1002, (2000)
- …
|
⋄ Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN
G. Neu, M. Teisseire, N. Grandjean, H. Lahrèche, B. Beaumont, I. Grzegory, S. Porowski, P. Tronc
Proc. Int. Conf. on the Physics of Semiconductors, ,
, (2000)
- …
|
⋄ Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation
H.P.D. Schenk, M. Leroux, and P. De Mierry
J. Appl. Phys., 88,
1525, (2000)
- Papier régulier
|
⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range
B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science, 164,
241, (2000)
- …
|
⋄ AlxGa1-xN-based UV photodetectors and waveguides
F. Omnès, E. Monroy, B. Beaumont, E. Doghèche, F. Calle, E. Muñoz, P. Gibart
Proc. of Compound Semiconductor Power Transistors, 2000-1,
205, (2000)
- …
|
⋄ Green electroluminescent (Ga,InAl)N LEDs grown on Si(111)
S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux
Electron. Lett., 36(20),
1728, (2000)
- Papier régulier
|
⋄ AlGaN based structures on sapphire for visible blind Schottky barrier UV photodetectors : towards high performance device applications
F. Omnès, E. Monroy, B. Beaumont, F. Calle, E. Muñoz, P. Gibart
Proc. SPIE, 3948,
234, (2000)
- …
|
⋄ ZnSe-based Schottky barrier photodetectors
F. Vigué, E. Tournié, J.P. Faurie
Electron. Lett., 36(25),
352, (2000)
- Papier régulier
|
⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett., 77,
2189, (2000)
- Papier régulier
|
⋄ Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films
M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai
Appl. Phys. Lett., 77,
2115, (2000)
- Papier régulier
|
⋄ Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers
G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko
Appl. Phys. Lett., 77,
1348, (2000)
- Papier régulier
|
⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K
B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie
Appl. Phys. Lett., 77,
1268, (2000)
- Papier régulier
|
⋄ Growth of gallium nitride epitaxial layers and applications
B. Beaumont, P. Gibart, N. Grandjean, J. Massies
C.R. Acad. Sci. Paris, 1, série IV,
35, (2000)
- …
|
⋄ Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range
F. Vigué, E. Tournié, J.P. Faurie
Appl. Phys. Lett., 76,
242, (2000)
- Papier régulier
|
⋄ Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular- beam epitaxy
G. Neu, E. Tournié, C. Morhain, M. Teisseire, J.P. Faurie
Phys. Rev. B, 61,
15789, (2000)
- Papier régulier
|
⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)
S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61,
7618, (2000)
- Papier régulier
|
⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180,
363, (2000)
- …
|
⋄ ZnSe-based heterostructures for blue-green lasers
J.P. Faurie, E. Tournié
CR. Acad. Sci. Paris, 1, série IV,
23, (2000)
- …
|
⋄ Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001)
C. Chauvet, E. Tournié, J.P. Faurie
J. Cryst. Growth, 214/215,
95, (2000)
- …
|
⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
N. Grandjean, B. Damilano, J. Massies S. Dalmasso
Sol. Stat. Comm., 113,
495, (2000)
- Papier régulier
|
⋄ Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods
P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart
J. Appl. Phys., 87(12),
4175, (2000)
- Papier régulier
|
⋄ Hydrogen/deuterium : a probe to investigate carrier-compensation in ZnSe:N
E. Tournié, H. Pelletier, G. Neu, B. Theys, A. Lusson, M. Teisseire, C. Chauvet, J.P. Faurie
J. Cryst. Growth, 214/215,
507, (2000)
- …
|
⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures
P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Mater. Res. Soc. Symp. Proc., 639,
G9.8, (2000)
- …
|
⋄ High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates
E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude
Appl. Phys. Lett., 77,
2551, (2000)
- Papier régulier
|
⋄ Comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN
B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahrèche, F. Omnès
J. Electron. Mat., 29,
603, (2000)
- …
|
⋄ Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN
F.K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Muñoz
J. Electron. Mat., 29,
1351, (2000)
- …
|
⋄ Infrared studies on GaN single crystals and homoepitaxial layers
E. Frayssinet, W. Knap, P. Prystawko, M. Leszczynski, I.Grzegory, T. Suski, B. Beaumont, P. Gibart
J. Cryst. Growth, 218,
161, (2000)
- …
|
⋄ Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements
A.F. Brana, A.F. Diaz-Paniagua, F. Batallan, J.A. Garrido, E. Muñoz, F. Omnès
J. Appl. Phys., 88(2),
932, (2000)
- Papier régulier
|
⋄ Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes
E. Monroy, F. Calle, J.L. Pau, F.J. Sanchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Appl. Phys., 88(2),
2081, (2000)
- Papier régulier
|
⋄ Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies
Sol. Stat. Comm., 115,
575, (2000)
- …
|
⋄ Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures
E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639,
G7.5, (2000)
- …
|
⋄ Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)
H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart
J. Cryst. Growth, 217,
13, (2000)
- Papier régulier
|
⋄ Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation
K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean
Mater. Res. Soc. Symp. Proc., 639,
G9.11, (2000)
- …
|
⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red
Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc., 639,
G10.1.1-11, (2000)
- Article de conférence - invité
|
⋄ AlGaN photodiodes for monitoring the solar UV radiation
E. Muñoz, E. Monroy, F. Calle, F. Omnès, P. Gibart
Journal of Geophysical Research, 105,
4865, (2000)
- …
|
⋄ Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN
P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra
MRS Internet J. Nitride Semicond. Res., 5,
8, (2000)
- Papier régulier
|
⋄ AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment
T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude
Proc. IEEE Ultrason. Symp., 1,
293-297, (2000)
- Article de conférence
|
⋄ Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy
H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart
J. Appl. Phys., 87,
577, (2000)
- Papier régulier
|
⋄ High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates
W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639,
G7.3, (2000)
- …
|
⋄ Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation
A. Amokrane, S. Dassonneville, B. Sieber, J.L. Farvaque, B. Beaumont, V. Bousquet, P. Gibart, J.D. Ganiere, K. Leifer
J. Phys.: Condens. Matter, 12,
10271, (2000)
- Papier régulier
|
⋄ Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum
A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire
J. Cryst. Growth, 209,
435, (2000)
- …
|
⋄ Study of the band alignment in (Zn,Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy
C. Guenaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, J.P. Faurie
J. Appl. Phys., 87,
1863, (2000)
- Papier régulier
|
⋄ Modeling of the spectral response of the AlxGa1-xN Schottky barrier ultraviolet photodetectors
A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, E. Muñoz
J. Appl. Phys., 87(12),
8286, (2000)
- Papier régulier
|
⋄ Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry
L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies,
Jpn. J. Appl. Phys, 39,
20, (2000)
- Papier régulier
|
⋄ Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies
Thin Solid Films, 364,
156, (2000)
- …
|
⋄ Low-noise metal-insulator-semiconductor UV photodiodes based on GaN
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès
Electron. Lett., 36(25),
2096, (2000)
- Papier régulier
|
⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots
A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 180,
375, (2000)
- …
|
⋄ AlxGa1-xN based UV visible –blind photodetector applications
F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart
Opto-Electronics Review, 8(1),
43, (2000)
- …
|
⋄ Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films
Y. Xin, J.I. Arslan, S. Sivananthan, N.D. Browning, S.J. Pennycook, F. Omnès, B. Beaumont, J.P. Faurie, P. Gibart
Appl. Phys. Lett., 76,
466, (2000)
- Papier régulier
|
⋄ Optically detected magneto resonance mapping on the yellow luminescence in GaN
K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart
Appl. Phys. Lett., 76,
1828, (2000)
- Papier régulier
|
⋄ GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates
M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu
Appl. Phys. Lett., 76,
3807, (2000)
- Papier régulier
|
⋄ Surface kinetics of GaN evaporation and growth by molecular beam epitaxy
S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano
Surf. Sci., 450,
191, (2000)
- …
|
⋄ A Raman study of ZnxBe1-xSe alloy (100) epitaxial layers
O. Pages, M. Ajjouin, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Appl. Phys. Lett., 77,
519, (2000)
- Papier régulier
|
⋄ Signature of GaN-AlN quantum dots by nonresonant Raman scattering
J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 77,
2174, (2000)
- Papier régulier
|
⋄ Time response analysis of ZnSe-based Schottky barrier photodetectors
E. Monroy, F. Vigue, F. Calle, E. Muñoz and J.P. Faurie,
Appl. Phys. Lett., 77,
2761, (2000)
- Papier régulier
|
⋄ GaAs/GaAs twist-bonding for compliant substrates : interface structure and epitaxial growth
G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.C. Harmand, F. Glas
Applied Surface Science, 164,
15, (2000)
- …
|
⋄ Giant Atomic Swirl in Graphene Bilayers with Biaxial Heterostrain
F. Mesple, N.R. Walet, G. Trambly de Laissardière, F. Guinea, D. Dosenovic, H. Okuno, C. Paillet, A. Michon, C. Chapelier,
and V.T. Renard
Adv. Mater., ,
2306312, (203)
- Papier régulier
|
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
