Fonctions

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Responsable de l'activité lithographie électronique (EBL) dans l'équipe SCR.
Responsable de l'activité microscopie à balayage (MEB) dans l'équipe SCR.

Activités

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Plateforme de technologie (lithographie, chimie, dépôt, gravure, caractérisation)
MEB-EDX

Publications (20)

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⋄ Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas Max Meunier, John J. H. Eng, Zhao Mu, Sebastien Chenot, Virginie Brändli, Philippe de Mierry, Weibo Gao and Jesús Zúñiga-Pérez Nanophotonics, 12 (8),  1405-1419, (2023) - Papier régulier

⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson, F. Semond, G. Feuillet, and C. Cornet J. Appl. Phys., 132,  165102, (2022) - Papier régulier

⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover Sci Rep., 10,  18919, (2020) - Papier régulier

⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields Appl. Phys. Express., 12,  045007, (2019) - Papier régulier

⋄ Metasurface orbital angular momentum holography H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet Nat. Commun, 10,  2986, (2019) - Papier régulier

⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil J. Appl. Phys., 126,  205701, (2019) - Papier régulier

⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet J. Cryst. Growth, 526,  125235, (2019) - Papier régulier

⋄ Metasurfaces Orbital Angular Momentum Holography H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet Nat. Commun, 10,  2986, (2019) - Papier régulier

⋄ Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2-Gap-Mode Metasurfaces P. Ni, A. de Luna Bugallo, V.M. Arellano Arreola, M.F. Salazar, E. Strupiechonski, V. Brändli, R. Sawant, B. Alloing and P. Genevet ACS Photonics, 6, 7,  1594-1601, (2019) - Papier régulier

⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet Adv. Opt. Mater., 7(14),  1801271, (2019) - Papier régulier

⋄ Gallium nitride MEMS resonators: how residual stress impacts design and performances C. Morelle, D. Théron, J. Derluyn, S. Degroote, M. Germain, V. Zhang, L. Buchaillot, B. Grimbert, P. Tilmant, F. Vaurette, I. Roch-Jeune, V. Brändli, V. Avramovic, E. Okada, M.Faucher IIEEE DTIP, 24,  371–377, (2018) - Article de conférence

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies J. Cryst. Growth, 477,  262, (2017) - Papier régulier

⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez Appl. Phys. Express., 9,  015502, (2016) - Papier régulier

⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez Phys. Stat. Sol. B, 252,  1096, (2015) - Papier régulier

⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron Phys. Stat. Sol. A, 211,  1655-1659, (2014) - Papier régulier

⋄ Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels P. Sangaré, G. Ducournau, B.Grimbert, V. Brändli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González J. Phys. D: Appl. Phys., 113,   034305, (2013) - ...

⋄ Searching for THz Gunn oscillations in GaN planar nanodiodes A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangare, M. Faucher, B. Grimbert, V. Brändli, G. Ducournau, and C. Gaquière J. Appl. Phys., 111,  113705, (2012) - ...

⋄ GaN-based nano rectifiers for THz detection P. Sangaré, G. Ducournau, B. Grimbert, V. Brändli, M. Faucher, C. Gaquière IEEE IRMMW, IRMMW - THz 2012,  1-2, (2012) - Article de conférence

⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot IEEE MEMS, 24th MEMS Int. Conf.,  581-584, (2011) - Article de conférence

⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin IEEE FCS, 2011,  1-5, (2011) - Article de conférence

Membre du conseil de Laboratoire
Démonstration pour la fête de la science

Formation sur les techniques de microscopie optique, microscopie électronique et de lithographie électronique

Cursus

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2008: Bac+5 Institut d'Administration des Entreprises de Grenoble France Master Professionnel : Management - Ingénierie de l'Innovation.
2007: Bac+5 Université Joseph Fourier de Grenoble France Master Professionnel : Ingénierie des Couches Minces.