Photo de Julien Brault
Nom : Julien Brault
Statut : Chercheur
Grade : DR2
Équipe(s) : Opto   
: +33 4 93 95 4108

Activités


Responsable de l'équipe Opto

Hétérostructures et dispositifs à base de semi-conducteurs III-N fabriqués par épitaxie sous jets moléculaires :

Principaux projets développés :

  • Développements des matériaux à base d’(Al,Ga)N pour l’opto-électronique
    • Hétéro-épitaxie d’AlN sur substrat de saphir (EJM, EPVOM) pour composants UV
    • Dopage p de l’AlGaN pour LEDs et lasers, transistors pour circuits de communication RF
      (Projets : ANR Labex GANEX APOGEE 2020-24, PRCE NANOGANUV 2015-19 et EDGaN 2016-20)
  • Couches actives (Al,Ga)N nanostructurées à fort rendement quantique interne
    • Ingénierie de nanostructures AlGaN : boîtes/fils/puits quantiques
    • Développement de la croissance épitaxiale sur surfaces à « hauts indices de Miller »
    • Procédés d’intégration monolithique par EJM sur substrats saphir
      (Projets : ANR PRCE NANOGANUV 2015-19 et Labex GANEX APOGEE 2020-24)
  • Ingénierie d’hétérostructures quantiques pour nouveaux composants dans l’ultra-violet
    • Etude et développement de jonctions tunnels AlGaN
    • Diodes et lasers à base de nanostructures AlGaN (LEDs à forts EQE, VCSELs)
    • Photodétecteurs à avalanche à structure périodique nanométrique à fort gain linéaire
      (Projets : ANR PRC DUVET 2018-21 et Labex GANEX APOGEE 2020-24)

Publications (85)


⋄ (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Aly Zaiter, Nikita Nikitskiy, Maud Nemoz, Phuong Vuong, Vishnu Ottapilakkal, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Nanomaterials, 13,  2404, (2023) - Papier régulier

⋄ Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic Computing

Xiayang Hua, Jiyuan Zheng, Xu Han, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lin Gan, Mohamed Al Khalfioui, Julien Brault, Lai Wang
ACS Appl. Nano Mater., 6,  8461, (2023) - Papier régulier

⋄ Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

O. Romanyuk, J. Brault, I. Gordeev, E. Ukraintsev, J. Houdková, and P. Jiříček
J. Appl. Phys., 133,  035301, (2023) - Papier régulier

⋄ Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings

Alexandra Ibanez, Nikita Nikitskiy, Aly Zaiter, Pierre Valvin, Wilfried Desrat, Thomas Cohen, M. Ajmal Khan, Guillaume Cassabois, Hideki Hirayama, Patrice Genevet, Julien Brault, Bernard Gil
J. Appl. Phys., 134,  193103, (2023) - Papier régulier

⋄ Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Materials, 15,  8602, (2022) - Papier régulier

⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy

B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva
Nanotechnology, 34,  245602, (2022) - Papier régulier

⋄ Coulomb blockade: Towards charge control of self-assembled GaN quantum dots at room temperature

C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck
Appl. Phys. Lett., 120,  012105, (2022) - Papier régulier

⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593,  126779, (2022) - Papier régulier

⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188,  108210, (2022) - Papier régulier

⋄ DUV LEDs based on AlGaN Quantum Dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686,  116860T, (2021) - Article de conférence - invité

⋄ A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Blandine Alloing, Mathieu Leroux, Seoung-Hwan Park, Julien Brault and Yong-Hoon Cho
Nanoscale Adv., 2,  1449-1455, (2020) - Papier régulier

⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3,  4054, (2020) - Papier régulier

⋄ Photoassisted chemical smoothing of AlGaN surface after laser lift-off

Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, and Baoping Zhang
JVST B, 38,  042207, (2020) - Papier régulier

⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras
J. Appl. Phys., 128,  085703, (2020) - Papier régulier

⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien
Nanotechnology, 32,  015705, (2020) - Papier régulier

⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil
Crystals, 10,  1097, (2020) - Papier régulier

⋄ Paper Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

L. Abou-Hamdan, S. Hamyeh, A. Iskandar, R. Tauk, J. Brault, M. Tabbal, P.M. Adam, M. Kazan
Nanotechnology, 32,  115703, (2020) - Papier régulier

⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36,  024001, (2020) - Papier régulier

⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126,  205701, (2019) - Papier régulier

⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li
Phys. Stat. Sol. A, 216(24),  1900655, (2019) - Papier régulier

⋄ Al5+αSi5+δN12, a new Nitride compound

R. Dagher, L. Lymperakis, V. Delaye, L. Largeau, A. Michon, J. Brault & P. Vennéguès
Sci Rep., 9,  15907, (2019) - Papier régulier

⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel
IEEE Photonic Tech L, 30,  1567, (2018) - Papier régulier

⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499,  40, (2018) - Papier régulier

⋄ Loss analysis in nitride deep ultraviolet planar cavity

Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang
J. Nanophotonics, 12,  043504, (2018) - Papier régulier

⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33,  075007, (2018) - Papier régulier

⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil
Superlattices Microstruct., 114,  161, (2018) - Papier régulier

⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122,  085706, (2017) - Papier régulier

⋄ Interface dipole and band bending in the hybrid p - n heterojunction Mo S 2 / GaN ( 0001 )

H. Henck, Z. Ben Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, F. Sirotti, F. Bertran, P. Le Fevre, S. Berciaud, A. T. Charlie Johnson, E. Lhuilli
Phys. Rev. B, 96,  115312, (2017) - Papier régulier

⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4),  1600436, (2017) - Papier régulier

⋄ Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25,  23035-23044, (2017) - Papier régulier

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477,  262, (2017) - Papier régulier

⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault.
J. Cryst. Growth, 461,  10-15, (2017) - Papier régulier

⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16,  1863, (2016) - Papier régulier

⋄ Ultraviolet light emitting diodes using III-N quantum dots

J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55,  95, (2016) - Papier invité

⋄ GaN quantum dot polarity determination by X-ray photoelectron diffraction

O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka
Appl. Surf. Sci., 389,  1156, (2016) - Papier régulier

⋄ High temperature electrical transport study of Si-doped AlN

S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault
Superlattices Microstruct., 98,  253, (2016) - Papier régulier

⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L, 28,  1661, (2016) - Papier régulier

⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55,  05FG06, (2016) - Papier régulier

⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

B. Damilano, J. Brault and J. Massies
J. Appl. Phys., 118,  024304, (2015) - Papier régulier

⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118,  024303, (2015) - Papier régulier

⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363,  93630Z, (2015) - Article de conférence

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212,  2297–2301, (2015) - Papier régulier

⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones

M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116,  034308, (2014) - Papier régulier

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986,  89860Z, (2014) - Article de conférence

⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29,  084001, (2014) - Papier invité

⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter

B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G,  8986, (2014) - Article de conférence - invité

⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau
J. Cryst. Growth, 388,  35, (2014) - Papier régulier

⋄ Plasmon energy from strained GaN quantum wells

M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken
Appl. Phys. Lett., 103,  021901, (2013) - Papier régulier

⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth, 363,  282, (2013) - Papier régulier

⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52,  08JG01, (2013) - Papier régulier

⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano.
Appl. Phys. Lett., 103,  032102, (2013) - Papier régulier

⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy

N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies
J. Appl. Phys., 114,  053505, (2013) - Papier régulier

⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6,  092105, (2013) - Papier régulier

⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior

D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B, 88,  125437, (2013) - Papier régulier

⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates

J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter
Appl. Phys. Lett., 103,  262104, (2013) - Papier régulier

⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates

Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau
Appl. Phys. Express, 6,  042101, (2013) - Papier régulier

⋄ Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process

E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird
Mat. Sci. For., 711,  228-232, (2012) - Article de conférence

⋄ Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strainevolution and phase separation

M. Korytov, J.A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.L. Rouvière, and P. Vennégués
J. Appl. Phys., 111,  084309, (2012) - Papier régulier

⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A, 209,  465, (2012) - Papier régulier

⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots

J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566,  73, (2012) - Article de conférence

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109,  053514, (2011) - Papier régulier

⋄ Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces

E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
J. Appl. Phys., 109,  084511, (2011) - Papier régulier

⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy

Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau
Appl. Phys. Lett., 99,  261910 , (2011) - Papier régulier

⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110,  084318, (2011) - Papier régulier

⋄ Blue-green and white color tuning of monolithic light emitting diodes

B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108,  073115, (2010) - Papier régulier

⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3,  200983426, (2010) - Article de conférence

⋄ Carrier transfer and recombination dynamics of a long-lived and visiblerange emission from multi-stacked GaN/AlGaN quantum dots

J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault
Appl. Phys. Lett., 97,  061905, (2010) - Papier régulier

⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105,  033519, (2009) - Papier régulier

⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet

J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EAS Publications Series, 37,  207-215, (2009) - Article de conférence

⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging

J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings, 7474,  74741G, (2009) - Article de conférence

⋄ Phase separation in GaN/AlGaN quantum dots

M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès
Appl. Phys. Lett., 95,  141901, (2009) - Papier régulier

⋄ UV Imaging Based on AlGaN Arrays

J.Y. Duboz, J. Brault, J.P. Truffer, J.A. Robot, K. Robin, J.L. Reverchon
Phys. Stat. Sol. (c), S2,  S611, (2009) - Article de conférence

⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès
Appl. Phys. Lett., 94,  143105, (2009) - Papier régulier

⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246,  845-845, (2009) - Papier régulier

⋄ High doping level in Mg-doped GaN layers grown at low temperature

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103,  013110, (2008) - Papier régulier

⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92,  051911, (2008) - Papier régulier

⋄ Thickness and substrate effects on AlN thin film growth at room temperature

B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
Eur. Phys. J. Appl. Phys., 43(3),  309-313, (2008) - Papier régulier

⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001)

S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett., 92,  23111, (2008) - Papier régulier

⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90,  101117, (2008) - Papier régulier

⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding

S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli
J. Appl. Phys., 103,  123112, (2008) - Papier régulier

⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1,  121101, (2008) - Papier régulier

⋄ AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging

J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz
SPIE procedings, 6744,  674417, (2007) - Article de conférence

⋄ Monolithic white light emitting diodes with a broad emission spectrum

A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1,  57-60, (2007) - Article de conférence

⋄ Diodes électroluminescentes blanches pour l'éclairage

B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique, ,  86, (2006) - Livres et chapitres de livres

⋄ Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides

Y.H. Cho, H. S. Kwack, B.J. Kwon, J. Barjon, J. Brault, B. Daudin, Le Si Dang
Appl. Phys. Lett., 89,  251914, (2006) - Papier régulier

Contrats en cours


⋄ DOPALGAN (2022 - 2027)

p-doping engineering of AlGaN materials (ANR) - Projet National
Partenaires:

Contrats terminés


⋄ NanoGaNUV (2015 - 2019)

Fabrication, Modélisation, Caractérisation de Nanostructures AlGaN Auto-Assemblées pour Emetteurs UV (ANR) - Projet National
Partenaires: CRHEA, L2C, INLN, INSP, RIBER S.A

⋄ Optique Non-linéaire dans des Guide guides d’onde AlGaN à gradient d’indice (2019 - 2019)

Optique Non-linéaire dans l'AlGaN (Fédération Doeblin) - Projet National
Partenaires: INPHYNI, CRHEA

Encadrements en cours


Antoine Barbier-Cueil (Doctorant)
Nikita Nikitskiy (Doctorant)
Aly Zaiter (Doctorant)

Encadrements terminés


Samuel Matta (Doctorant) (2018)
YuanYang Xia (Doctorant) (2013)
Maxim Korytov (Post-Doc après thèse CRHEA) (2017)
Joël Edouard Nkeck (Stagiaire) (2017)
Takfarinas Belayel (Stagiaire) (2016)
François Mondain (Stagiaire) (2015)
Gaétano Randazzo (Stagiaire) (2014)
Alain Abou Khalil (Stagiaire) (2014)
Antoine Ogereau (Stagiaire) (2011)

Parcours professionnel


2002-2004 : LIMMS/CNRS-IIS, Institute of Industrial Science, University of Tokyo, Japan - Chercheur associé

Nanotechnologie de composants microélectroniques Si :

  • Nano-cristaux Si (croissance par CVD, propriétés structurales)
  • Réalisation de diodes MOS et transistors : étude des propriétés de transport

2000-2002 : Equipe Mixte CEA-CNRS "Nanophysique & Semiconducteurs" IRIG, GRENOBLE, France – Chercheur post-doc

Matériaux semiconducteurs à grande bande interdite (nitrures et carbure de silicium) :

  • Hétéro-épitaxie III-N (mécanismes de croissance, ingénierie de contraintes)
  • Propriétés structuraes & optiques (applications aux lasers UV)

1997-2000 : Laboratoire d’Electronique, Optoélectronique et Microsystèmes – LEOM, INLN, Ecole Centrale de LYON, France – doctorat

Nanotechnologie des matériaux III-V (phosphures et arséniures) :

  • Hétéro-épitaxie, fabrication et caractérisation de boîtes et fils quantiques
  • Applications aux photodétecteurs et lasers (micro-disques) pour l’infra-rouge

Diplômes


1997-2000 : Laboratoire d’Electronique, Optoélectronique et Microsystèmes – LEOM, INLN, Ecole Centrale de LYON, France

Thèse de doctorat en Sciences des Matériaux et Optoélectronique

1992-1997 : Université Claude Bernard, LYON, France

Diplôme d’études approfondies en Science des Matériaux et Maîtrise de Physique