Epitaxy center - Overview
The Epitaxy Division brings together the various crystal growth activities that form the core of the research conducted at CRHEA. It consists of researchers, faculty members, and engineers who are experts in epitaxy. They work daily with epitaxy reactors primarily dedicated to the growth of semiconductors (materials with high bandgap energy, 2D materials, and materials for photovoltaics). The various pieces of equipment are grouped into two platforms distinguished by the type of epitaxy method: molecular beam epitaxy (MBE, 8 reactors) and chemical vapor deposition (CVD, 6 reactors). In addition, the platform is equipped with a high-temperature N2 annealing furnace (1700°C).
The center has three objectives:
- Develop state-of-the-art structures based on high-bandgap materials (Al, Ga, In-N, Zn, Mg-O, and SiC) for applications in electronics (transistors, diodes, and sensors), optoelectronics (LEDs and lasers), and photonics (metasurfaces and photonic circuits) on various host substrates (primarily sapphire and silicon).
- Develop new materials for photovoltaics, such as (Zn,Mg)-N and halogenated perovskites of the Cs(Pb/Sn)Br type.
- Exploring the epitaxy of 2D materials (graphene, BN, transition metal dichalcogenides—TMDs) as well as van der Waals heterostructures.
MBE Epitaxy Platform
Nitrides of Group III elements
Four reactors installed between 1994 and 2007 and one reactor provided by Riber Sa in 2018.
For the epitaxy of Al,Ga,In-N materials on substrates up to 8 inches in diameter.
Each reactor is equipped with in-situ monitoring instruments: pyrometry, reflectometry, and RHEED.
Summary of MBE Equipment
* The carbon footprint of some of the reactors was estimated based on costs (purchase costs including depreciation and operating costs)
entered into the following purchase simulator:
https://apps.labos1point5.org/purchases-simulator
Pricing
Prices are listed exclusive of tax and in euros. They vary depending on the applicant’s status: a private company, an academic institution (university, other public research institution, etc.), or a CNRS unit. The base rate is established by taking into account all costs associated with producing a standard epitaxial sample. This “base” rate may be adjusted depending on the complexity of the requested sample and/or the calibrations required for its production. For all requests, please email a detailed description of the desired sample structure to the platform managers.Stéphane Vézian and Eric Frayssinet.
These rates do not include the supply of substrates, which may be provided by customers. If not, the cost of the substrates will be billed separately.
