Photo de Stéphane Vézian
Nom : Stéphane Vézian
Statut : Ingénieur
Grade : IR1
Équipe(s) : Nano Spintronique  
: +33 4 93 95 4223

Fonctions


Co-responsable de la thématique Spintronique

Activités


Étude physico-chimique des surfaces de semi-conducteurs à grand gap par RHEED, LEED, XPS, AFM et STM.
Épitaxie de semi-conducteurs par MBE, Nitrures d'éléments III (III-N) et terres rares nitrurés.
Réalisation de nanostructures, nanofils, métasurfaces III-N par sublimation sélective.

Publications (78)


⋄ Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates

M. Takiguchi, S. Sergent, B. Damilano, S. Vézian, S. Chenot, N. Yazigi, P. Heidt, T. Tsuchizawa, T. Yoda, H. Sumikura, A. Shinya, and M. Notomi,
ACS Photonics, 0,  0, (2024) - Papier régulier

⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
J. Appl. Phys., 135,  095702, (2024) - Papier régulier

⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
APL Materials, 11,  031105, (2023) - Papier régulier

⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck
Appl. Phys. Lett., 122,  092402, (2023) - Papier régulier

⋄ Descriptor engineering in machine learning regression of electronic structure properties for 2D materials

M.T. Dau, M. Al Khalfioui, A. Michon, A. Reserbat-Plantey, S. Vézian and P. Boucaud
Sci Rep., 13,  5426, (2023) - Papier régulier

⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593,  126779, (2022) - Papier régulier

⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188,  108210, (2022) - Papier régulier

⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil,
J. Appl. Phys., 132,  035302, (2022) - Papier régulier

⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes

Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano,
Phys. Stat. Sol. A, 219,  2200055, (2022) - Papier régulier

⋄ Enhanced Sm spin projection in GdxSm1−xN

J. D. Miller, J. F. McNulty, B. J. Ruck, M. Al Khalfioui, S. Vézian, M. Suzuki, H. Osawa, N. Kawamura, and H. J. Trodahl
Phys. Rev. B, 106,  174432, (2022) - Papier régulier

⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy

B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva
Nanotechnology, 34,  245602, (2022) - Papier régulier

⋄ Porous Nitride LEDs

Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva
ACS Photonics, 9,  1256, (2022) - Papier régulier

⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12,  3631, (2021) - Papier régulier

⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0,  0, (2021) - Papier régulier

⋄ Bandwidth-unlimited polarization-maintaining metasurfaces

Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet
Sci. Adv., 7(5),  eabe1112, (2021) - Papier régulier

⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11,  2651, (2020) - Papier régulier

⋄ Lasing up to 380 K in a sublimated GaN nanowire

S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi
Appl. Phys. Lett., 116,  223101, (2020) - Papier régulier

⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10,  5642, (2020) - Papier régulier

⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper
Nanotechnology, 31,  465706, (2020) - Papier régulier

⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption

Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet
Nanophotonics, 10(1),  697, (2020) - Papier régulier

⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36,  024001, (2020) - Papier régulier

⋄ InGaN islands and thin films grown on epitaxial graphene

C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot
Nanotechnology, 31,  405601, (2020) - Papier régulier

⋄ Magnetoresistance of epitaxial GdN films

T. Maity, H. J. Trodahl, S. Granville, S. Vézian, F. Natali, and B. J. Ruck
J. Appl. Phys., 128,  213901, (2020) - Papier régulier

⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14),  1801271, (2019) - Papier régulier

⋄ Metasurface orbital angular momentum holography

H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet
Nat. Commun, 10,  2986, (2019) - Papier régulier

⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,  045007, (2019) - Papier régulier

⋄ Metasurfaces Orbital Angular Momentum Holography

H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet
Nat. Commun, 10,  2986, (2019) - Papier régulier

⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials

P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5,  52, (2019) - Papier régulier

⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics

S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi
ACS Photonics, 6,12,  3321-3330, (2019) - Papier régulier

⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz
J. Appl. Phys., 126,  224503, (2019) - Papier régulier

⋄ Optimization and uncertainty quantification of gradient index metasurfaces

N. Schmitt, N. Georg, G. Brière, D. Loukrezis, S. Héron, S. Lanteri, C. Klitis, M. Sorel, U. Rômer, H. De Gersem, S. Vézian, and P. Genevet
Opt. Mater. Express, 9,  892-910, (2019) - Papier invité

⋄ Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN

C.-M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, N. Gaston, and F. Natali
J. Appl. Phys., 123,  115106, (2018) - Papier régulier

⋄ Electron transport in heavily doped GdN

T. Maity, H.J. Trodahl, F. Natali, and B.J. Ruck and S. Vézian
Phys. Rev. Materials, 2,  014405, (2018) - Papier régulier

⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 255(5),  1700392, (2017) - Papier régulier

⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25,  33243, (2017) - Papier régulier

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477,  262, (2017) - Papier régulier

⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films

J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2,  165, (2017) - Article de conférence

⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances, 2,  189, (2017) - Article de conférence

⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16,  6454, (2016) - Papier régulier

⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16,  1863, (2016) - Papier régulier

⋄ Superconductivity in the ferromagnetic semiconductor samarium nitride

E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck
Phys. Rev. B, 94,  024106, (2016) - Papier régulier

⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)

S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450,  22, (2016) - Papier régulier

⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers

R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823,  1003, (2015) - Article de conférence

⋄ Highly resistive epitaxial Mg-doped GdN thin films

C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106,  022401, (2015) - Papier régulier

⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films

F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404,  146-151, (2014) - Papier régulier

⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment

M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157,  404, (2014) - Papier régulier

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104,  071912, (2014) - Papier régulier

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742,  117, (2013) - Article de conférence

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113,  203501, (2013) - Papier régulier

⋄ Role of magnetic polarons in ferromagnetic GdN

F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87,  035202, (2013) - Papier régulier

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)

A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720,  625, (2012) - Article de conférence

⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)

A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711,  253, (2012) - Article de conférence

⋄ Fabrication and growth of GaN-based micro and nanostructures

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9,  412-427, (2012) - Papier invité

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720,  621, (2012) - Article de conférence

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349,  27, (2012) - Papier régulier

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9,  175-178, (2011) - Article de conférence

⋄ GaN nanocolumns on sapphire by ammonia-MBE: From self-organizedto site-controlled growth

S. Vézian, B. Alloing and J. Zúñiga-Pérez
J. Cryst. Growth, 323,  326, (2011) - Article de conférence

⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett., 98,  011914, (2011) - Papier régulier

⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97,  171909, (2010) - Papier régulier

⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells

F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79,  035328, (2009) - Papier régulier

⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311,  3278, (2009) - Papier régulier

⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001)

S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett., 92,  23111, (2008) - Papier régulier

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068,  51-56, (2008) - Article de conférence

⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source

S. Vézian, A. Le Louarn and J. Massies
J. Cryst. Growth, 303,  419, (2007) - Papier régulier

⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells

F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71,  75311, (2005) - Papier régulier

⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,  125329, (2004) - Papier régulier

⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects

C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu
Phys. Stat. Sol. (b), 241 (3),  631, (2004) - Article de conférence

⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36,  659, (2004) - Article de conférence

⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234,  445, (2004) - Article de conférence

⋄ Origins of GaN(0001) Surface Reconstructions

S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541,  242, (2003) - Papier régulier

⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire

F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie
Phys. Stat. Sol. (b), 229,  931, (2002) - Article de conférence

⋄ Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers

C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229,  881, (2002) - …

⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie
J. Appl. Phys., 90,  5115, (2001) - Papier régulier

⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties

B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth, 227/228,  466, (2001) - …

⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates

F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie
Appl. Phys. Lett., 79,  194, (2001) - Papier régulier

⋄ Surface morphology of GaN grown by molecular beam epitaxy

S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82,  56, (2001) - …

⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61,  7618, (2000) - Papier régulier

⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett., 77,  2189, (2000) - Papier régulier

Contrats en cours


Contrats terminés


⋄ Kiwi

Semiconductor based spintronics: can rare-earth nitrides and group II -nitrides get it together (Prestation de service)
Projet International  CRHEA, Univ. Welligton (2014 - 2017)

⋄ Superconducting and Computing

Thin-film preparation to support Magnetic Memory for Superconducting and Computing (CCR)
Projet International  CRHEA, Univ. Victoria Wellington (NZ) (2019 - 2020)

Encadrements en cours


Encadrements terminés


Thèse


Application de la microscopie à sonde locale à l'étude de la surface de GaN(0001)
Thèse soutenue en octobre 2000 au CRHEA

Prix Pierre Favard décerné par la société française de microscopie (2001)

Cursus


Licence et maîtrise de Physique de l’Université de Nice Sophia Antipolis (1994-1995)
DEA physique et génie des matériaux de l’Université de Nice Sophia Antipolis (1996)