Nom : Mohamed Al Khalfioui
Statut : Maître de conférences
Grade : MC
Équipe(s) : Nano
☎ : +33 4 93 95 4215
Fonctions
Activités
Publications (33)
⋄ Descriptor engineering in machine learning regression of electronic structure properties for 2D materials
M.T. Dau, M. Al Khalfioui, A. Michon, A. Reserbat-Plantey, S. Vézian and P. Boucaud
Sci Rep., 13, 5426, (2023) - Papier régulier⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN
J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck
Appl. Phys. Lett., 122, 092402, (2023) - Papier régulier⋄ Enhanced Sm spin projection in GdxSm1−xN
J. D. Miller, J. F. McNulty, B. J. Ruck, M. Al Khalfioui, S. Vézian, M. Suzuki, H. Osawa, N. Kawamura, and H. J. Trodahl
Phys. Rev. B, 106, 174432, (2022) - Papier régulier⋄ DUV LEDs based on AlGaN Quantum Dots
Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686, 116860T, (2021) - Article de conférence - invité⋄ Epitaxial Zn3N2 thin films by molecular beam epitaxy:Structural, electrical and optical properties
P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, and J. Zúñiga-Pérez
J. Appl. Phys., 130, 065104, (2021) - Papier régulier⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots
J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil
Crystals, 10, 1097, (2020) - Papier régulier⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials
L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras
J. Appl. Phys., 128, 085703, (2020) - Papier régulier⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126, 205701, (2019) - Papier régulier⋄ Role of In in hydrogenation of N-related complexes in GaInNAs
T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux, I.R.Sellers, B.Wang
ACS Appl. Electron. Mater., 1, 461, (2019) - Papier régulier⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure
X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li
Phys. Stat. Sol. A, 216(24), 1900655, (2019) - Papier régulier⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range
J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33, 075007, (2018) - Papier régulier⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE
S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215, 1700640, (2018) - Papier régulier⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499, 40, (2018) - Papier régulier⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs
C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers
RSC Adv., 7, 25353, (2017) - Papier régulier⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films
J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2, 165, (2017) - Article de conférence⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN
J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16, 6454, (2016) - Papier régulier⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450, 22, (2016) - Papier régulier⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55, 05FG06, (2016) - Papier régulier⋄ High temperature electrical transport study of Si-doped AlN
S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault
Superlattices Microstruct., 98, 253, (2016) - Papier régulier⋄ Ultraviolet light emitting diodes using III-N quantum dots
J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55, 95, (2016) - Papier invité⋄ Improved performance in GaInNAs solar cells by hydrogen passivation
M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui
J. Appl. Phys., 106, 141904, (2015) - Papier régulier⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers
Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A. Petrou
J. Appl. Phys., 117, 045705, (2015) - Papier régulier⋄ Highly resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106, 022401, (2015) - Papier régulier⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation
M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers
IEEE PVSC, 42, 1-3, (2015) - Article de conférence⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells
M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers
IEEE PVSC, 40th PSVC, 0669-0673, (2014) - Article de conférence⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods
Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou
Appl. Phys. Lett., 103, 012104, (2013) - Papier régulier⋄ Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy
D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett., 98, 131915, (2011) - Papier régulier⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, and J. Massies
J. Appl. Phys., 108, 033104, (2010) - Papier régulier⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes
M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron, 46, 1058, (2010) - Papier régulier⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C, 6, 1424, (2009) - Article de conférence⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys, 41, 155102, (2008) - Papier régulier⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech., 23, 035020, (2008) - Papier régulier⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing
M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC, 151(5), 433-436, (2005) - Article de conférence
Contrats en cours
⋄ Croissant
Croissance et caractérisation de matériaux TMDs (AAP REGION - GENERAL)
Projet Régional UCA, CRHEA (2021 - 2023)
Contrats terminés
Encadrements en cours
Encadrements terminés
Fabien Roze (Stagiaire) (2012)
Post-doc
Thèse
Cursus
