Nom : Jean-Yves Duboz
Statut : Chercheur
Grade : DR1
Équipe(s) : Opto
☎ : +33 4 93 95 4199
Activités
Publications (102)
⋄ Why and how In composition fluctuations appear in InGaN ?
Jean-Yves Duboz, Wanda Isnard, Jesus Zuniga-Perez, and Jean Massies
J. Cryst. Growth, 603, 127033, (2023) - Papier régulier⋄ Universal Active Metasurfaces for Ultimate Wavefront Molding by Manipulating the Reflection Singularities
Mahmoud Elsawy, Christina Kyrou, Elena Mikheeva, Rémi Colom, Jean-Yves Duboz,Khosro Zangeneh Kamali, Stéphane Lanteri, Dragomir Neshev, and Patrice Genevet
Laser Photonics Rev., 17, 2200880, (2023) - Papier régulier⋄ Coulomb blockade: Towards charge control of self-assembled GaN quantum dots at room temperature
C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck
Appl. Phys. Lett., 120, 012105, (2022) - Papier régulier⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes
Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano,
Phys. Stat. Sol. A, 219, 2200055, (2022) - Papier régulier⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi,
J. Phys. D: Appl. Phys., 55, 355107, (2022) - Papier régulier⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55, 355107, (2022) - Papier régulier⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks
Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47, 1521, (2022) - Papier régulier⋄ DUV LEDs based on AlGaN Quantum Dots
Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686, 116860T, (2021) - Article de conférence - invité⋄ Proton Energy Loss in GaN
Jean-Yves Duboz,* Julie Zucchi, Eric Frayssinet, Sébastien Chenot, Maxime Hugues, Jean-Claude Grini, and Joël Hérault
Phys. Stat. Sol. B, , 2100167, (2021) - Papier régulier⋄ Whispering-gallery mode InGaN microdisks on GaN substrates
H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29, 21280, (2021) - Papier régulier⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45, 4276, (2020) - Papier régulier⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper
Nanotechnology, 31, 465706, (2020) - Papier régulier⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers
F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117, 121103, (2020) - Papier régulier⋄ GaN Schottky diodes for proton beam monitoring
J.-Y. Duboz, J. Zucchi, E. Frayssinet, P. Chalbet, S. Chenot, M. Hugues, J.-C. Grini, R. Trimaud, M. Vidal and J. Hérault
Biomed. Phys. Eng. Express, 5, 025015, (2019) - Papier régulier⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9, 18095, (2019) - Papier régulier⋄ Theoretical estimation of tunnel currents in hetero-junctions: the special case of nitride tunnel junctions
J.Y. Duboz and B. Vinter
J. Appl. Phys., 126, 174501, (2019) - Papier régulier⋄ (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition
V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, and J.-Y. Duboz
AIP. Adv, 9, 055101, (2019) - Papier régulier⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits
F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27, 11800, (2019) - Papier régulier⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces
G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14), 1801271, (2019) - Papier régulier⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12, 045007, (2019) - Papier régulier⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz
J. Appl. Phys., 126, 224503, (2019) - Papier régulier⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5, 3643, (2018) - Papier régulier⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range
J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33, 075007, (2018) - Papier régulier⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111, 131103, (2017) - Papier régulier⋄ Efficient second harmonic generation in low-loss planar GaN waveguides
M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25, 23035-23044, (2017) - Papier régulier⋄ Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators
I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express, 24, 9602, (2016) - Papier régulier⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6, 34191, (2016) - Papier régulier⋄ Low loss GaN waveguides for visible light on Si Substrates
M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public., 9, 14050, (2014) - Papier régulier⋄ GaN/AlGaN superlattices for p contacts in LEDs
J.Y. Duboz
Semicond. Sci. Tech., 29, 035017, (2014) - Papier régulier⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers
J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett., 104, 241113, (2014) - Papier régulier⋄ Advanced photonic and nanophotonic devices, III-nitride semiconductors and their modern devices, éditeur B. Gil, Oxford University Press
J.Y. Duboz
OUP, 10, 330-365, (2013) - Livres et chapitres de livres⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure
B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz
Phys. Stat. Sol. C, 9, 931, (2012) - Article de conférence⋄ High quality factor AlN nanocavities embedded in a photonic crystal waveguide
D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M.J. Rashid, F. Semond, J.Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud
Appl. Phys. Lett., 100, 191104, (2012) - Papier régulier⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338, 20, (2012) - Papier régulier⋄ Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes
R. Charash, H. Kim-Chauveau, A. Vajpeyi, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, J.Y. Duboz, and B. Corbett
Phys. Stat. Sol. C, 8, 2378, (2011) - Article de conférence⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett., 98, 141104, (2011) - Papier régulier⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range
P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett., 32, 1561, (2011) - Papier régulier⋄ The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates
H. Kim-Chauveau, P. de Mierry, J.M. Chauveau and J.Y. Duboz
J. Cryst. Growth, 316, 30, (2011) - Papier régulier⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes
M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron, 46, 1058, (2010) - Papier régulier⋄ X-ray detectors based on GaN Schottky diodes
J.Y. Duboz, E. Frayssinet, S. Chenot, J.L. Reverchon, M. Idir
Appl. Phys. Lett., 97, 163504, (2010) - Papier régulier⋄ Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding
R. Charash, H. Kim-Chauveau, J.M. Lamy, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J.Y. Duboz, A. Hangleiter and B. Corbett
Appl. Phys. Lett., 98, 201112, (2010) - Papier régulier⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures
H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c), S2, 897, (2009) - Article de conférence⋄ Infrared detectors based on InGaAsN/GaAs intersubband transitions
J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien
Appl. Phys. Lett., 94, 022103, (2009) - Papier régulier⋄ Development of thick GaN-on-silicon layers for rectifier applications
H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz
EWMOVPE-XIII, D.14, 343-346, (2009) - Article de conférence - invité⋄ Towards green lasing: ingredients for a green laser diode based on GaInN
A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter
Phys. Stat. Sol. (c), C6 (S2), 792, (2009) - Article de conférence⋄ UV Imaging Based on AlGaN Arrays
J.Y. Duboz, J. Brault, J.P. Truffer, J.A. Robot, K. Robin, J.L. Reverchon
Phys. Stat. Sol. (c), S2, S611, (2009) - Article de conférence⋄ Anomalous photoresponse of GaN X-ray Schottky detectors
J.Y. Duboz, B. Beaumont, J.L. Reverchon and A.D. Wieck
J. Appl. Phys., 105, 114512, (2009) - Papier régulier⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet
J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EAS Publications Series, 37, 207-215, (2009) - Article de conférence⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection
P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett., 30, 1308, (2009) - Papier régulier⋄ Recent ROB developments on wide bandgap based UV sensors
B. Giordanengo, A. Ben Moussa, J.F. Hochedez, A. Soltani, P. de Moor, K. Minouglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zhou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, and H.X. Jiang
EDP_EAS, 37, 199, (2009) - Article de conférence⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging
J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings, 7474, 74741G, (2009) - Article de conférence⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys, 41, 155102, (2008) - Papier régulier⋄ AlGaN photodetectors for applications in the extreme UV range
P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE, 7003, , (2008) - Article de conférence⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities
K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond
Appl. Phys. Lett., 92, 241105, (2008) - Papier régulier⋄ Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
M. Richter, D. Reuter, J.Y. Duboz, A.D. Wieck
PhysicaE, 40, 1891, (2008) - Article de conférence⋄ GaN for x-ray detection
J.Y. Duboz, M. Laügt, H.P.D. Schenk, B. Beaumont, J.L. Reverchon, A.D. Wieck, and T. Zimmerling
Appl. Phys. Lett., 92, 263501, (2008) - Papier régulier⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech., 23, 035020, (2008) - Papier régulier⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots
M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies
Phys. Rev. B, 76 (7), 075335-6, (2007) - Papier régulier⋄ Intersubband transitions in InGaAsN/AlGaAs quantum wells with a high confinement energy
J.Y. Duboz
Phys. Stat. Sol. (c), 7, 2391, (2007) - Article de conférence⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells
M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies
Phys. Rev. B, 75, 045313, (2007) - Papier régulier⋄ AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)
J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications, 6585, 33-40, (2007) - Article de conférence⋄ AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging
J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz
SPIE procedings, 6744, 674417, (2007) - Article de conférence⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46, 12-16, (2007) - Papier régulier⋄ Energy levels and intersubband transitions in InGaAsN/AlGaAs quantum wells
J.Y. Duboz
Phys. Rev. B, 75, 045327, (2007) - Papier régulier⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M.
M. Hugues, B. Damilano, J.Y. Duboz, J. Massies
Phys. Rev. B, 75, 115337, (2007) - Papier régulier⋄ Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy
H.P.D. Schenk, P. Demolon, S. Ndiaye, M. Laügt, T. Gühne, Z. Bougrioua, P. de Mierry, J.Y. Duboz, A.D. Dräger, C. Netzel, and A. Hangleiter
Proc. Int. Workshop Nitride Based Nanostruct., , 127, (2007) - Article de conférence⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations
T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz
J. Appl. Phys., 101, 073510, (2007) - Papier régulier⋄ Solar blind AlGaN photodetectors with a very high spectral selectivity
J.Y. Duboz , N. Grandjean, A. Dussaigne, M. Mosca, J.L. Reverchon, P.G. Verly, R.H. Simpson
Eur. Phys. J. Appl. Phys., 33, 5, (2006) - Papier régulier⋄ An AlGaN Based Linear Array for UV Solar Blind Imaging from 240 nm to 280 nm
G. Mazzeo, J.L. Reverchon, J.Y. Duboz, A. Dussaigne
IEEE Sensors Journal, 6(4), 957-63, (2006) - Papier régulier⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate
M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck
Appl. Phys. Lett., 88, 231902, (2006) - Papier régulier⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm
M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies
Appl. Phys. Lett., 88, 91111, (2006) - Papier régulier⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm
M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3979, (2006) - Article de conférence⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications
M. Richter, B. Damilano, J. Massies, and J.Y. Duboz
Mater. Res. Soc. Symp. Proc., 891, 0891-EE03-29.1, (2006) - Article de conférence⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate
M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3848, (2006) - Article de conférence⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE
A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies
Proc. SPIE Int. Soc. Opt. Eng., 5840, 72, (2005) - Article de conférence⋄ Light-ion beam analysis for microelectronic applications
L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon
Nucl Inst and MethodB, 240, 265, (2005) - Article de conférence⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja
Appl. Phys. Lett., 86, 071105, (2005) - Papier régulier⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well
M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro
Electron. Lett., 41 No.10, 595, (2005) - Papier régulier⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy
A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies
IEEE Photon. Techno. Letters, 17, Issue: 6, 1142-1144, (2005) - Papier régulier⋄ Status of AlGaN based Focal Plane Arrays for UV solar blind detection
J.L. Reverchon, G. Mazzeo, A. Dussaigne, J.Y. Duboz
Proc. SPIE, 5964, 596402, (2005) - Article de conférence⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert
Proc. SPIE Int. Soc. Opt. Eng., 5840, 81, (2005) - Article de conférence⋄ Solar blind detectors based on AlGan grown on sapphire
J.Y. Duboz, N. Grandjean, F. Omnès, J.L. Reverchon, M. Mosca
Phys. Stat. Sol. (c), N3, 964-971, (2005) - Article de conférence - invité⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing
M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC, 151(5), 433-436, (2005) - Article de conférence⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm
J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies
Appl. Phys. Lett., 87, 251109, (2005) - Papier régulier⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers
B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro
Proc. SPIE Int. Soc. Opt. Eng., 5840, 781, (2005) - Article de conférence⋄ Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
M. Mosca, J.L. Reverchon, F. Omnès, J.Y. Duboz
J. Appl. Phys., 95, 4367, (2004) - Papier régulier⋄ Multilayer (Al,Ga)N structures for solar-blind detection
M. Mosca, J.L. Reverchon, N. Grandjean, J.Y. Duboz
IEEE J. Selec. Topics in Quant. Electronics, 10, 752, (2004) - Papier régulier⋄ Internal photoemission in solar blind AlGaN Schottky barrier photodiodes
J.Y. Duboz, N. Grandjean, F. Omnès, M. Mosca, J.L. Reverchon
Appl. Phys. Lett., 86, 063511, (2004) - Papier régulier⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy
B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies
IEE Proc.-Optoelectron., 151, No. 5, 433-436, (2004) - Article de conférence⋄ High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD
J.Y.Duboz, J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès,
Mater. Res. Soc. Symp. Proc., 798, 47-51, (2004) - Article de conférence⋄ Solar blind AlGaN Metal-Semiconducteur-Metal Devices for High Performance Flame Detection
M. Mosca, J.L. Reverchon, N. Grandjean, F. Omnès, J.Y. Duboz, I. Ribet, M. Tauvy
Mater. Res. Soc. Symp. Proc., 764, C4-4-1, (2003) - Article de conférence⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon
J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42, 118, (2003) - Papier régulier⋄ UV metal semiconductor metal detectors
J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès, F. Semond, J.Y. Duboz, L. Hirsch
Proc. of NATO Conference, , , (2003) - Article de conférence⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92, 5602, (2002) - Papier régulier⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector
L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91, 6095, (2002) - Papier régulier⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 325, (2001) - …⋄ Nuclear microprobe analysis of GaN bases light emitting diodes
L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz
Phys. Stat. Sol. (a), 188, 171, (2001) - …⋄ Photoconductance measurements and Stokes shift in InGaN alloys
J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 197, (2001) - …⋄ Dielectric microcavity in GaN/Si
J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a), 183, 35, (2001) - …⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B, 82, 256, (2001) - …⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180, 363, (2000) - …⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films, 380, 195, (2000) - …
Contrats en cours
⋄ GaNeXT (2020 - 2024)
Réseau de laboratoires français travaillant sur les nitrures d’éléments III (AlInGaN) - Prolongement de GaNeX (Labex) - Projet National
Partenaires: CRHEA, INAC-IRIG/NEEL, IEMN, L2C, LETI, Institut Pascal, LAAS, UMI GT-CNRS, CIMAP, IEMN, Ampère, GREMAN, IMS, G2ELAB, ...⋄ MATRIX (2022 - 2025)
Matrice de diodes GaN pour l'imagerie de protons (ANR) - Projet National
Partenaires: Centre Antoine Lacassagne, West German Proton Therapy Center Essen, Ruhr-Universität Bochum⋄ SWEET (2022 - 2027)
SUB-WAVELENGTH Electro Optic Systems (ANR) - Projet National
Partenaires: CRHEA, INRIA, NAPATECHNOLOGYContrats terminés
⋄ Duvet (2017 - 2022)
Jonction tunnel GaN (ANR) - Projet National
Partenaires: CRHEA, IEMN, LETI⋄ Blanc total (2012 - 2017)
Réalisation de diodes électroluminescentes pour l'éclairage (IA) - Projet National
Partenaires: CRHEA, Aledia, CEA, Lfoundry, Ledpower⋄ Nano2022 (2019 - 2022)
Projet Nano 2022 (Convention Recherche Innovation/DGE - ST) - Projet National
Partenaires: CRHEA, DGE⋄ Ganex (2012 - 2019)
Réseau de laboratoires français travaillant sur les nitrures d’éléments III (AlInGaN) (Labex) - Projet National
Partenaires: CRHEA, IEMN, CIMAP, LPN, IEF, LPS, UMI-GT, IMN, GREMAN, IMS, Inst. PASCAL, Ampere, LETI, INAC/NEEL, G2Lab, CEMES, Laas, L2C
Encadrements en cours
Matilde Siviero (Doctorant) Encadrements terminés
Victor Fan Arcara (Doctorant) (2020) Feng Li (Doctorant) (2013) Sylvain Sergent (Doctorant) (2010) Pierre Demolon (Doctorant) (2010) Tobias Guehne (Doctorant) (2008) Jean-Marc Béthoux (Doctorant) (2004) Shirley Prado de la Cruz (Stagiaire) (2021) Wanda Isnard (Stagiaire) (2020) Julie Zucchi (Stagiaire) (2018) Rémy Claveau (Stagiaire) (2012)
Post-doc
Thèse
Cursus
