Integration
Smaller, faster, more economical: this has been the guiding principle of the semiconductor industry since the first bipolar transistor was manufactured in 1947. Moore’s Law is a perfect example of this, and component performance has continued to improve over the past few decades. Faced with the ever-increasing demands and needs of our societies, devices have become considerably more complex and involve increasingly advanced physical phenomena. Consequently, the concept of integrating different functionalities within a single component has become an essential path for future generations of devices.
The range of intrinsic physical properties of the materials developed by the SEMI team offers a wide variety of possible combinations, as well as the opportunity to integrate them monolithically. Currently, as part of the SPINOXIDE project, in collaboration with researchers from GEMAC in Versailles, we are developing a combination of ZnO/ZnMgO quantum wells and a Fe₃O₄ ferromagnetic layer to create ultra-efficient spin detectors.
One of the team’s goals is to expand the range of applications by developing structures that integrate multiple functionalities. To achieve this, the exceptional piezoelectric and ferroelectric properties of ScAlN will be leveraged, as will the low-temperature superconducting state of NbN. NbN can also be used as an epitaxial metal layer, either buried or on the surface, thereby paving the way for innovative component architectures.
These future systems are being developed in collaboration with various academic research groups (GEMAC, IEF, IJL) as well as within the laboratory through cross-team studies.
Contact ?
