NbN and superconducting junctions
Having mastered the epitaxial growth of III-N/NbN/III-N heterostructures, the team is investigating the role of epitaxy in the development of high-efficiency single-photon detectors based on nanoribbons
Molecular beam epitaxy of NbN thin films on a Si(111) silicon substrate via an AlN buffer layer
Members of the team are depositing thin layers of NbN via epitaxy to improve the performance of single-photon detectors.
The figure on the left shows, via AFM imaging, the surface morphology of the NbN films as a function of growth temperature and NH3 flow rate.
The figure on the right plots resistance versus temperature and reveals a critical temperature of approximately 11 K.
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