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4 publications classées par date - Critères de recherche: Elias

⋄ ScAlN/GaN high electron mobility transistor heterostructures grown by ammonia source molecular beam epitaxy on Silicon substrate

C. Elias, S. Chenot, F. Bartoli, M. Hugues and Y. Cordier
Phys. Stat. Sol. A, , 2400963, (2025) - Papier régulier
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⋄ Ammonia-MBE growth of ScAlN for high power/high frequency electronics

Yvon CORDIER, Maxime HUGUES, Caroline ELIAS, Sébastien CHENOT, Florian BARTOLI, Aimeric COURVILLE, Philippe VENNEGUES
Proc. SPIE, 13366, 1336602, (2025) - Papier invité

⋄ Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frederic Georgi, Maxime Hugues, Yvon Cordier, Francois Vurpillot, Lorenzo Rigutti
Appl. Phys. Lett., 123, 162102, (2023) - Papier régulier

⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
APL Materials, 11, 031105, (2023) - Papier régulier