Publications (209)

⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier
Mat. Sci. For., 1062, 482-486, (2022) - Article de conférence

⋄ A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers

P. Shanmugam, L. Iglesias, M. Portail, I. Dufour, D. Certon, D. Alquier, J.F. Michaud
Mat. Sci. For., 1062, 593-597, (2022) - Article de conférence

⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material

M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062, 140-145, (2022) - Article de conférence

⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride

M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062, 84-88, (2022) - Article de conférence

⋄ Designing SiC Based CMUT Structures: An Original Approach and Related Materials Issues

M. Portail, S. Chenot, M. Ghorbanzadeh-Bariran, R. Khazaka, L. Nguyen, D. Alquier and J.F. Michaud
Mat. Sci. For., 1062, 94-98, (2022) - Article de conférence

⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188, 108210, (2022) - Papier régulier

⋄ Stability of the threshold voltage in fluorine-implanted normally‑off AlN/GaN HEMTs co‑integrated with commercial normally‑on GaN HEMT technology

Florent ALBANY, François LECOURT, Ewa WALASIAK, Nicolas DEFRANCE, Arnaud CURUTCHET, Hassan MAHER, Yvon CORDIER, Nathalie LABAT, Nathalie MALBERT
Microelectronics Reliabilty, 126, 114291, (2021) - Article de conférence

⋄ Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

N. Al Taradeh, E. Frayssinet, C. Rodriguez, F. Morancho, C. Sonneville, L.-V. Phung, A. Soltani, F. Tendille, Y. Cordier, H. Maher
Energies, 12, 4241, (2021) - Papier régulier

⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon
Mat. Sci. For., 1004, 132, (2020) - Article de conférence

⋄ Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications

Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon, Mathieu Koudia, Elie Assaf, Antoine Ronda, Paola Castrucci, Maurizio De Crescenzi, Holger Vach, and Mathieu Abel
ACS Appl. Nano Mater., 4, 4462, (2021) - Papier régulier

⋄ Quantum sensing of a coherent single spin excitation in a nuclear ensemble

D. M. Jackson, D. A. Gangloff, J. H. Bodey, L. Zaporski, C. Bachorz, E. Clarke, M. Hugues, C. Le Gall and M. Atatüre
Nat. Phys., 17, 585, (2021) - Papier régulier

⋄ Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem

L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette, F. Vurpillot, E. Giraud, J.F. Carlin, R. Butté, N. Grandjean, N. Gogneau, L. Largeau, F. H. Julien, M. Tchernycheva, J.M. Chauveau and M. Hugues
Microsc. Microanal., 22, 650 - 651, (2016) - Papier régulier

⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,7, 1900760, (2020) - Papier régulier

⋄ In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

P. Dalapati, G. Beainy, E. Di Russo, I. Blum, J. Houard, S. Moldovan, A. Vella, F. Vurpillot, N. Le Biavan, M. Hugues, J.M. Chauveau, and L. Rigutti
Phys. Rev. Applied, 15, 024014, (2021) - Papier régulier

⋄ AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts

Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, Hideto Miyake and Farid Medjdoub
Electronics, 10, 635, (2021) - Papier régulier

⋄ New barrier layer design for the fabrication of GaN-MIS-HEMT Normally-off transistor

F. Cozette, B. Hassan, C. Rodriguez, E. Frayssinet, R. Comyn, F. Lecourt, N. Defrance, N. Labat, F. Boone, A. Soltani, A. Jaouad, Y. Cordier, H. Maher
Semicond. Sci. Tech., 36, 034002, (2020) - Papier régulier

⋄ Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications

F. Giannazzo, E. Schilirò, R. Lo Nigro, P. Prystawko, Y. Cordier
Nitride Semiconductor Tech., , 397, (2020) - Livres et chapitres de livres

⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36, 024001, (2020) - Papier régulier

⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie, N. Nahas, Y. Cordier
J. Cryst. Growth, 552, 125911, (2020) - Papier régulier

⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien
Nanotechnology, 32, 015705, (2020) - Papier régulier

⋄ Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

M. Bah, D. Valente, M. Lesecq, N. Defrance, M. Garcia Barros, J-C. De Jaeger, E. Frayssinet, R. Comyn, T.H. Ngo, D. Alquier, Y. Cordier
Sci Rep., 10, 14166, (2020) - Papier régulier

⋄ Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating

H. Spisser, A. Grimault-Jacquin, N. Zerounian, A. Aassime, L. Cao, F. Boone, H. Maher, Y. Cordier, F. Aniel
Choisir un journal..., 37, 243 - 257, (2016) - Papier régulier

⋄ Thermodynamical analysis of the shape and size dispersion of In As / In P ( 001 ) quantum dots

A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M. Mérat-Combes, G. Saint-Girons
Phys. Rev. B, 73, 16, (2006) - Papier régulier

⋄ AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology

M. Abou Daher, M. Lesecq, P. Tilmant, N. Defrance, M. Rousseau, Y. Cordier, J.C. De Jaeger, and J.G. Tartarin
JVST B, 38, 033201, (2020) - Papier régulier

⋄ Remote epitaxy using graphene enables growth of stress-free GaN

T Journot, H Okuno, N Mollard, A Michon, R Dagher, P Gergaud, J Dijon, A V Kolobov and B Hyot
Nanotechnology, 30, 505603, (2019) - Papier régulier

⋄ Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching

D. Allioux, A. Belarouci, D. Hudson, E. Magi, M. Sinobad, G. Beaudin, A. Michon, N. Singh, R. Orobtchouk, and C. Grillet
Photonics Res., 6, 5, B74-B81, (2018) - Papier invité

⋄ Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

A. Jollivet, M. Tchernycheva, V. Trinité, E. Frayssinet, P. De Mierry, Y. Cordier and F.H. Julien
Appl. Phys. Lett., 115, 261103, (2019) - Papier régulier

⋄ 2 W/mm power density of an AlGaN/GaN HEMT grown on Free-Standing GaN Substrate at 40 GHz, Semiconductor Science and Technology

M.R. Irekti, M. Lesecq, N. Defrance, E. Okada, E. Frayssinet, Y. Cordier, J.G. Tartarin, J.C. De Jaeger
Semicond. Sci. Tech., 34, 12LT01, (2019) - Papier régulier

⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217, 1900760, (2019) - Papier régulier

⋄ High lateral breakdown voltage in thin channel AlGaN/GaN high electron mobility transistors on AlN/sapphire templates

I. Abid, R. Kabouche, C. Bougerol, J. Pernot, C. Masante, R. Comyn, Y. Cordier, F. Medjdoub
Micromachines , 10, 690, (2019) - Papier régulier

⋄ High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

F. Giannazzo, G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, F. Roccaforte, F. Iucolano, S. Ravesi, E. Frayssinet, A. Michon, Y. Cordier
ACS Appl. Electron. Mater., 1, 2342, (2019) - Papier régulier

⋄ Coherence of a dynamically decoupled quantum-dot hole spin

L. Huthmacher, R. Stockill, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Phys. Rev. B, 97, 241413, (2018) - Papier régulier

⋄ Improving a solid-state qubit through an engineered mesoscopic environment

G. Éthier-Majcher, D. Gangloff, R. Stockill, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Phys. Rev. Lett., 119, 130503, (2017) - Papier régulier

⋄ Phase tuned entangled state generation between distant spin Qubits

R. Stockill, M. J. Stanley, L. Huthmacher, E. Clarke, M. Hugues, A. J. Miller, C. Matthiesen, C. Le Gall, and M. Atatüre
Phys. Rev. Lett., 119, 010503, (2017) - Papier régulier

⋄ Quantum interface of an electron and a nuclear ensemble

D. A. Gangloff, G. Éthier-Majcher, C. Lang, E. V. Denning, J. H. Bodey, D. M. Jackson, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Science, 364 (6435), 62-66, (2019) - Papier régulier

⋄ Silicene Nanostructures Grown on Graphene Covered SiC (0001) Substrate

I. Berbezier , A. Michon , P. Castrucci , M. Scarselli , M. Salvato , M. Scagliotti and M. De Crescenzi
Int. J. Nanosci., 18, 1940039, (2019) - Papier régulier

⋄ Kapitza thermal resistance characterization of epitaxial graphene-SiC(0001) interface

G. Hamaoui, R. Dagher, Y. Cordier, A. Michon, S. Potiron, M. Chirtoc, and N. Horny
Appl. Phys. Lett., 114, 1601, (2019) - Papier régulier

⋄ Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

E. Schilirò, F. Giannazzo, C. Bongiorno, S. Di Franco, G. Greco, F. Roccaforte, P. Prystawko, P. Kruszewski, M. Leszczyński, M. Krysko, A. Michon, Y. Cordier, I. Cora, B. Pecz, H. Gargouri, R. Lo Nigro
Mat Sci Semicon Proc, 97, 35-39, (2019) - Papier régulier

⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers

J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 924, 318-321, (2018) - Article de conférence

⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz
J. Cryst. Growth, 507, 220, (2019) - Papier régulier

⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 214, 1600419, (2017) - Article de conférence

⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE

S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215, 1700640, (2018) - Papier régulier

⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011, 1-5, (2011) - Article de conférence

⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf., 581-584, (2011) - Article de conférence

⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon
Cryst. Eng. Comm., 20, 3702-3710, (2018) - Papier régulier

⋄ Graphene integration with nitride semiconductors for high power and high frequency electronics

F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 214, 1600460, (2016) - Papier régulier

⋄ Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs

H. Yacoub, T. Zweipfennig, H. Kalisch, A. Vescan, A. Dadgar, Matthias Wieneke, Jürgen Bläsing, A. Strittmatter, Stephanie Rennesson, and Fabrice Semond
Phys. Stat. Sol. A, 2018, 1700638, (2018) - Article de conférence

⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate

T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5), 1700399, (2018) - Papier régulier

⋄ Inkjet‐Printed Nanocavities on a Photonic Crystal Template

F. SF Brossard, V. Pecunia, A. J. Ramsay, J. P. Griffiths, M. Hugues, H. Sirringhaus
Adv. Mater., 29(47), 1704425, (2017) - Papier régulier

⋄ A combined growth process for state-of-the-art GaN on silicon

G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600449, (2017) - Papier régulier

⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc., 268,3, 305-312, (2017) - Papier régulier

⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 215(10), 1700653, (2017) - Papier régulier

⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate

R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 215(9), 1700642, (2017) - Papier régulier

⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger
Phys. Stat. Sol. A, 10, 1700637, (2017) - Papier régulier

⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref
Current Applied Physics, 17, 1601-1608, (2017) - Papier régulier

⋄ Anomalous DC and RF Behavior of Virgin AlGaN/AlN/GaN HEMTs

H. Sánchez Martín, O. García, S. Perez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. Gonzalez, J. Mateos, I.Iniguez de la Torre
Semicond. Sci. Tech., 32, 035011, (2017) - Papier régulier

⋄ Recent improvements of flexible GaN-based HEMT technology

S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, Y. Cordier, B. Damilano, G. Tabares Jimenez, A. Ebongue, and V. Hoel
Phys. Stat. Sol. A, 214(4), 1600484, (2017) - Papier régulier

⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes

R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail
Appl. Phys. Lett., 110, 081602, (2017) - Papier régulier

⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4), 1600436, (2017) - Papier régulier

⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction

R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail
J. Appl. Phys., 120, 185306, (2016) - Papier régulier

⋄ Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC

B. Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, J. R. Huntzinger, A. Tiberj, A.-A. Zahab, T. Bauch, P. Lucignano, A. Tagliacozzo, F. Lombardi and F. Tafuri
J. Supercond. Nov. Magn., 29, 1145, (2016) - Papier régulier

⋄ Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions

D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, T. Bauch, A. Michon, A. De Candia, P. Lucignano, F. Lombardi, F. Tafuri, and A. Tagliacozzo
Phys. Rev. B, 94, 054525, (2016) - Papier régulier

⋄ Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher
J. Micromech. Microeng., 26, 105015, (2016) - Papier régulier

⋄ Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes
Mat. Sci. For., 858, 249-252, (2016) - Article de conférence

⋄ Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques

G. Liaugaudas, D. Dargis, P. Kwasnicki, R. Arvinte, M. Zielinski, K. Jarašiūnas
J. Phys. D: Appl. Phys., 48, 025103, (2015) - Papier régulier

⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For., 858, 137-142, (2016) - Article de conférence - invité

⋄ Optical characterization of p-type 4H-SiC epilayers

G. Liaugaudas, D. Dargis, P. Kawasnicki, H. Peyre, R. Arvinte, S. Juillaguet, M. Zielinski, K. Jarašiūnas
Mat. Sci. For., 821-823, 249-252, (2015) - Article de conférence

⋄ Comparative studies of n-type 4H-SiC: Raman vs Photoluminescence spectroscopy

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet
Mat. Sci. For., 821-823, 237-240, (2015) - Article de conférence

⋄ Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G.Ferro, H.B. Weber, M. Krieger
Mat. Sci. For., 778-780, 261, (2014) - Article de conférence

⋄ Raman investigation of heavily Al doped 4H-SiC layers grown by CVD

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski,L. Konczewicz, S. Contreras, J. Camassel and S. Juillaguet
Mat. Sci. For., 806, 51, (2015) - Article de conférence

⋄ 3C-SiC: from electronic to MEMS devices

J.F. Michaud, M. Portail and D. Alquier
Advanced Silicon Carbide Devices and Processing , Edited by E. Saddow and F. La Via, Intech, ISBN 978-953-51-2168-8, (2015) - Livres et chapitres de livres

⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

R. Comyn, Y. Cordier, S. Chenot, A. Jaouad, H. Maher, V. Aimez
Phys. Stat. Sol. A, 213, 917-924, (2016) - Papier régulier

⋄ First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor

S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel
IEEE Electron Device Letters, 37, 553, (2016) - Papier régulier

⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett., 108, 011608, (2016) - Papier régulier

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433, 165-171, (2016) - Papier régulier

⋄ AlGaN/GaN High Electron Mobility Transistors grown by Ammonia Source Molecular Beam Epitaxy

Y. Cordier
Gallium Nitride (GaN): Physics, Devices, and Technology, F.Medjdoub, CRC Press, 45-60, (2015) - Livres et chapitres de livres

⋄ Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier and F. Schopfer
Nat. Nanotechnol., 10, 965–971, (2015) - Papier régulier

⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud
Acta Mater., 98, 336, (2015) - Papier régulier

⋄ Al(Ga)N/GaN High Electron Mobility Transistors on Silicon

Y. Cordier
Phys. Stat. Sol. A, 212, 1049-1058, (2015) - Papier invité

⋄ Epitaxial challenges of GaN on silicon

F. Semond
MRS Bulletin, vol 40, 412-417, (2015) - Papier invité

⋄ Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

R. Comyn, Y. Cordier, V. Aimez, and H. Maher
Phys. Stat. Sol. A, 212, 1145-1152, (2015) - Article de conférence

⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For., 821-823, 149, (2015) - Article de conférence

⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun, 6, 6806, (2015) - Papier régulier

⋄ Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P.M. Gammon, M.R. Jennings, M. Thomas, C.A. Fisher, Y.K. Sharma, M. Placidi, M. Chmielowska, S. Chenot, M. Porti, M. Nafría and Y. Cordier
Nanotechnology, 26, 115203, (2015) - Papier régulier

⋄ Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, A. Cutivet, N. Defrance, E. Okada, M. Lesecq, S. Rennesson, A. Agboton, Y. Cordier, V. Hoel, and J.C. De Jaeger
IEEE Electron. Device Lett., 36, 303, (2015) - Papier régulier

⋄ On the Correlation Between Kink Effect and Effective Mobility in InAlN/GaN HEMTs

P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquiere, J. De Jaeger, E. Frayssinet, Y. Cordier
Proc. of the 9th European Microwave Integrated Circuit Conference, , 88-91, (2014) - Article de conférence

⋄ Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
Mat. Sci. For., 806, 81-87, (2014) - Article de conférence

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers

Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4, 498-501, (2014) - Article de conférence

⋄ Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices

O. Arenas, É. Al Alam, A. Thevenot, Y. Cordier, A. Jaouad, V. Aimez, H. Maher, R. Arès and F. Boone
IEE JEDS, 2, 145-148, (2014) - Papier régulier

⋄ Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder

W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault
Eur. Phys. J. Appl. Phys., 68, 20102, (2014) - Papier régulier

⋄ Gallium Nitride as an electromechanical material

M. Rais-Zadeh, V. Gokhale, A. Ansari, M. Faucher, D. Theron, Y. Cordier, L. Buchaillot
IEEE J.MEMS, 23, 1252-1271, (2014) - Papier régulier

⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Tech., 29, 115018, (2014) - Papier régulier

⋄ Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gruzinskis
Lithuanian Journal of Physics, 54, 58-62, (2014) - Papier régulier

⋄ Magnetic properties of Gd doped GaN

S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.W. Becker, D. Rogalla, and D. Reuter
Phys. Stat. Sol. B, 251, 1673-1684, (2014) - Papier régulier

⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A, 211, 1655-1659, (2014) - Papier régulier

⋄ Magnetoresistance of disordered graphene: From low to high temperatures

B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Phys. Rev. B, 90, 035423, (2014) - Papier régulier

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398, 23, (2014) - Papier régulier

⋄ Rotated domain network in graphene on cubic-SiC(001)

A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov
Nanotechnology, 25, 135605, (2014) - Papier régulier

⋄ Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel,
Phys. Rev. B, 89, 085422, (2014) - Papier régulier

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104, 071912, (2014) - Papier régulier

⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
Semicond. Sci. Tech., 27, 125010, (2012) - Papier régulier

⋄ Chapter 11: Nitride-based electron devices for high-power/high-frequency applications

Y. Cordier, T. Fujishima, B. Lu, E. Matioli, and T. Palacios
III Nitride Semiconductors and their Modern Devices, 1, 366, (2013) - Livres et chapitres de livres

⋄ Room temperature generation of THz radiation in GaN quantum wells structures

A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knapb, Y. Cordier, S. Chenot, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis
Proc. SPIE, 8624, 862409, (2013) - Article de conférence

⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate

T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10, 425, (2012) - Article de conférence

⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
ECS Solid State Letters, 2, p4, (2012) - Papier régulier

⋄ Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors

A. Perez-Tomas, A. Fontserè, S. Sanchez, M.R. Jennings, P.M. Gammon, and Y. Cordier
Appl. Phys. Lett., 102, 023511 , (2013) - Papier régulier

⋄ Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

N. Defrance, F. Lecourt, Y. Douvry, M. Lesecq, V. Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 1054, (2013) - Papier régulier

⋄ Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons

R. Messina, J.P. Hugonin, J.J. Greffet, F. Marquier, Y. De Wilde, A. Belarouci, L. Frechette, Y. Cordier and P. Ben-Abdallah
Phys. Rev. B, 87, 085421 , (2013) - Papier régulier

⋄ Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, M. Rousseau, M. Chmielowska, M. Ramdani, and J.C. De Jaeger
IEEE Electron Devices Letters, 34, 490, (2013) - Papier régulier

⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier
Appl. Phys. Lett., 102, 093503, (2013) - Papier régulier

⋄ Terahertz transmission and effective gain measurement of two-dimensional electron gas

R. Sharma, T. Laurent, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Phys. Stat. Sol. A, 210, 1454, (2013) - Papier régulier

⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier
J. Appl. Phys., 113, 174501, (2013) - Papier régulier

⋄ Magnetotransport studies of AlGaN/GaN heterostructures with 2 two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination

W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, and Y. Cordier
J. Appl. Phys., 114, 023704, (2013) - Papier régulier

⋄ Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, E. Okada, M. Chmielowska, M.R. Ramdani and J.C. De Jaeger
Semicond. Sci. Tech., 28, 094003, (2013) - Papier régulier

⋄ Optimization of Al0.29Ga0.71N//GaN High Electron Mobility Transistor heterostructures for high power/frequency performances

S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 3105, (2013) - Papier régulier

⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A, 210, 480-483, (2013) - Papier régulier

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742, 117, (2013) - Article de conférence

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113, 203501, (2013) - Papier régulier

⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Microelec. Engineering, 105, 65, (2013) - Papier régulier

⋄ Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process

E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird
Mat. Sci. For., 711, 228-232, (2012) - Article de conférence

⋄ Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, Y. Cordier, and J.C. De Jaeger
Phys. Stat. Sol. C, 9, 1083-1087, (2012) - Article de conférence

⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy

Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib
Phys. Stat. Sol. C, 9, 523-526, (2012) - Article de conférence

⋄ Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria,
Nanotechnology, 23, 395204, (2012) - Papier régulier

⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 )

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Mat. Sci. Eng. B, 52, 2547-2550, (2012) - Papier régulier

⋄ Electromechanical Transconductance Properties of a GaN MEMS Resonator with fully integrated HEMT Transducers

M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, C. Gaquière and D. Théron
JMEMS, 21, 370-378, (2012) - Papier régulier

⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys., 111, 023511, (2012) - Papier régulier

⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics, 75, 86-92, (2012) - Papier régulier

⋄ Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria
Appl. Phys. Lett., 101, 093505, (2012) - Papier régulier

⋄ Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces

E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
J. Appl. Phys., 109, 084511, (2011) - Papier régulier

⋄ Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime

J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B, 84, 153202, (2011) - Papier régulier

⋄ Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría
Appl. Phys. Lett., 99, 213504, (2011) - Papier régulier

⋄ Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings
Microelectronic Engineering, 88 (10), 3140, (2011) - Papier régulier

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)

A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720, 625, (2012) - Article de conférence

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720, 621, (2012) - Article de conférence

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349, 27, (2012) - Papier régulier

⋄ A graphene electron lens

L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken
Appl. Phys. Lett., 100, 153106, (2012) - Papier régulier

⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys., 111, 053507, (2012) - Papier régulier

⋄ A new approach for AFM cantilever elaboration with 3C-SiC

S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier
Materials Letters , 77, 54, (2012) - Papier régulier

⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX, 5, 025504, (2012) - Papier régulier

⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC

X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Nucl. Instr. and Method Phys. Research B, 269, 2020, (2011) - Papier régulier

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9, 175-178, (2011) - Article de conférence

⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)

A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711, 253, (2012) - Article de conférence

⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC

J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 711, 179, (2012) - Article de conférence

⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si

X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Mat. Sci. For., 711, 154, (2012) - Article de conférence

⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers

S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 711, 84, (2012) - Article de conférence

⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition

S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier
Mat. Sci. For., 711, 61, (2012) - Article de conférence

⋄ Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap
Appl. Phys. Lett., 99, 082101, (2011) - Papier régulier

⋄ RF Performance of AlGaN/GaN High Electron Mobility Transistors grown on Silicon (110)

D. Marti, C.R. Bolognesi, Y. Cordier, M. Chmielowska, M. Ramdani
Applied Physics Express, 4, 064105, (2011) - Papier régulier

⋄ Thermal effects in AlGaN/GaN/Si high electron mobility transistors

I. Saidi, Y. Cordier, M. Chmielowska, H. Mejri and H. Maaref
Solid State Electronics, 61, 1-6, (2011) - Papier régulier

⋄ Deposited thin SiO2 for gate oxide on n-type and p-type GaN

M. Placidi, A. Constant, A. Fontserè, E. Pausas, I. Cortes, Y. Cordier, N. Mestres, R. Pérez, M.Zabala, J. Millán, P. Godignon and A. Pérez-Tomás
Journal of the Electrochemical Society, 157, H1008-H1013 , (2010) - Papier régulier

⋄ Ohmic Contact Resistance dependence on Temperature for GaN devices

A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings
Mat. Sci. For., 679-680, 816-819, (2011) - Article de conférence

⋄ 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon
Mat. Sci. For., 645-648, 1207-1210, (2010) - Article de conférence

⋄ Growth of GaN based structures on focused ion beam patterned templates

Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.Y. Lo, Y.Y. Hu, A. Ludwig, A.D. Wieck
Phys. Stat. Sol. C, 8, 1516–1519 , (2011) - Article de conférence

⋄ Comparison of GaN-Based MOS Structures with Different Interfacial Layer Treatments

E. Al Alam, I. Cortes, M. P. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazzare, Y. Cordier, K. Isoird, F. Olivié
Proc. of the 27th conference on microelectronics, 2010, 459, (2010) - Article de conférence

⋄ Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov and V. Gruzinskis
Acta Physica Polonica A, 119, 107-110, (2011) - Article de conférence

⋄ Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range

F. Lecourt, Y. Douvry, N. Defrance, V. Hoel, Y. Cordier, J.C. De Jaeger
Proc. of the 5th European Microwave Integrated Circuits Conference, 2010, 33-36, (2010) - Article de conférence

⋄ Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla
Phys. Rev. B, 83, 205429, (2011) - Papier régulier

⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon

M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For., 679-680, 79, (2011) - Article de conférence

⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses

M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc, 1292, 115, (2010) - Article de conférence

⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon

S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier
AIP Conf Proc, 1292, 15, (2010) - Article de conférence

⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature

A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier
AIP Conf Proc, 1292, 51, (2010) - Article de conférence

⋄ Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
J. Cryst. Growth, 314, 85-91, (2011) - Papier régulier

⋄ Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy

E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard
Phys. Stat. Sol. C, 8, 1479-1482, (2011) - Article de conférence

⋄ Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

M. Katsikini, F. Pinakidoua, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, and T.D. Moustakas
Mat. Sci. Eng. B, 176, 723, (2011) - Papier régulier

⋄ Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth, 312, 3583, (2010) - Papier régulier

⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation

J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
ACS Appl. Electron. Mater., 1246, B09-04, (2010) - Article de conférence

⋄ Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties

A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti
Phys. Rev. B, 82, 125445, (2010) - Papier régulier

⋄ Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111)

A. Ouerghi, R. Belkhou, M. Marangolo, M.G. Silly, S. El Moussaoui, M. Eddrief, L. Travers, M. Portail, F. Sirotti
Appl. Phys. Lett., 97, 161905, (2010) - Papier régulier

⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97, 171909, (2010) - Papier régulier

⋄ Electric-field screening effects in the micro-photoluminescence spectra of as-grown stacking faults in 4H-SiC

S. Juillaguet, T. Guillet, R. Bardoux, J. Camassel and T. Chassagne
Mat. Sci. For., 556-557, 351-354, (2007) - Article de conférence

⋄ 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?

T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E.K. Polychroniadis and J. Camassel
Mat. Sci. For., 615-617, 339-342, (2009) - Article de conférence

⋄ Screening the built-in electric field in 4H silicon carbide stacking faults

S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Appl. Phys. Lett., 90, 111902, (2007) - Papier régulier

⋄ Cathodoluminescence investigation of stacking faults extension in 4H-SiC

S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Phys. Stat. Sol. A, 204, 2222-2228, (2007) - Papier régulier

⋄ Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition

M. Marinova, T. Robert, S. Juillaguet, I. Tsiaoussis, N. Frangis, E. Polychroniadis, J. Camassel, T. Chassagne
Phys. Stat. Sol. A, 206, 1924-1930, (2009) - Papier régulier

⋄ Magnetotransport characterization of AlGaN/GaN interfaces

R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Phys. Stat. Sol. A, 204, 586, (2007) - Article de conférence

⋄ Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

P. Muret, J. Pernot, M. Azize, Z. Bougrioua
J. Appl. Phys., 102, 053701, (2007) - Papier régulier

⋄ Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki
J. Appl. Phys., 102, 103701 , (2007) - Papier régulier

⋄ Mechanism of mobility increase of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma irradiation

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N; Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev
J. Appl. Phys., 103, 083707, (2008) - Papier régulier

⋄ Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein
J. Stat. Mech., 1, P01046, (2009) - Papier régulier

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19, 2683-2688 , (2010) - Papier régulier

⋄ Interfacial properties of AlN and oxidized AlN on Si

M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán.
surface science, 604, 63, (2009) - Papier régulier

⋄ Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates

P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett., 46, 240, (2010) - Papier régulier

⋄ Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang
J. Cryst. Growth, 311, 2087-2090, (2008) - Article de conférence

⋄ Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices

H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau
J. Cryst. Growth, 311, 2091-2095, (2008) - Article de conférence

⋄ AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices, 57, 1497-1503, (2010) - Papier régulier

⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne, M. Portail, M. Zielinski, E. Collard, D. Alquier
Mat. Sci. Eng. B, 171, 120, (2010) - Papier régulier

⋄ Anomalous Hall Effect in Gd-Implanted Wurtzite AlxGa1-N-x/GaN High Electron Mobility Transistor Structures

F.Y Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck
Materials Research Society Symposium Proceedings, 1111, 61-69, (2008) - Article de conférence

⋄ Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

T. Laurent, P. Nouvel, J. Torres, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, J.P. Faurie, B. Beaumont, E. Starikov, P. Shiktorov, V. Gruzinskis
Journal of Physics : Conference Series, 193, 012094, (2009) - Article de conférence

⋄ Analysis of the C-V characteristic SiO2/GaN MOS capacitors

I. Cortes, E. Al-Alam, M.P. Besland, P. Regreny, F. Morancho, A. Cazarré, Y. Cordier, A. Goullet and K. Isoird
Proc. 7th Spanish Conference on Electron Devices, 7, 254-257, (2009) - Article de conférence

⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing, 12, 16-20, (2009) - Article de conférence

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2, 715-718, (2009) - Article de conférence

⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2, 1020-1023, (2009) - Article de conférence

⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C, 6 - S2, 1016-1019, (2009) - Article de conférence

⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For., 600-603, 1277-1280, (2009) - Article de conférence

⋄ Performance of Unstuck Γ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10GHz

J.C. Gerbedoen, A.Soltani, N. Defrance, M. Rousseau, C. Gaquiere, J.C. De Jaeger, S. Joblot, Y. Cordier
European Microwave Integrated Circuits Conference, 2008, 330-333, (2008) - Article de conférence

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068, 51-56, (2008) - Article de conférence

⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
ACS Appl. Electron. Mater., 1068, C04-05, (2008) - Article de conférence

⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication

S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007, 96-99, (2007) - Article de conférence

⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance

Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique, 10, 73-77, (2009) - Article de conférence

⋄ GaN transistor characteristics at elevated temperatures

A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán
J. Appl. Phys., 106, 074519, (2009) - Papier régulier

⋄ High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel, Y. Cordier
Mat. Sci. Eng. B, 165-1-2, 1-4, (2009) - Article de conférence

⋄ Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahrèche , P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, C. Gaquière, and D. Théron
Appl. Phys. Lett., 94, 233506, (2009) - Papier régulier

⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105, 033701, (2009) - Papier régulier

⋄ Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source

F. Natali, Y. Cordier, C. Chaix, P. Bouchaib
J. Cryst. Growth, 311, 2029-2032, (2009) - Article de conférence

⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311, 2002-2005, (2009) - Article de conférence

⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si

X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Appl. Phys. Lett., 96, 142104, (2010) - Papier régulier

⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett., 95, 081903, (2009) - Papier régulier

⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c), 5 - n°6, 1971-1973, (2008) - Article de conférence

⋄ Thickness and substrate effects on AlN thin film growth at room temperature

B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
Eur. Phys. J. Appl. Phys., 43(3), 309-313, (2008) - Papier régulier