Publications (17)

⋄ Influence of dynamic morphological modifications of atom probe specimens on the intensity of their photoluminescence spectra
E. M. Weikum, P. Dalapati, G. Beainy, J. M. Chauveau, M. Hugues, D. Lefebvre, J. Houard, A. Vella, and L. Rigutti
JOSA B, 40, 1633, (2022) - Papier régulier

⋄ Highlighting the role of 3C‒SiC in the performance optimization of (Al,Ga)N‒based High‒Electron Mobility Transistors
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean‑Claude De Jaeger, Yvon Cordier
Mat Sci Semicon Proc, 171, 107977, (2024) - Papier régulier

⋄ Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography
Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frederic Georgi, Maxime Hugues, Yvon Cordier, Francois Vurpillot, Lorenzo Rigutti
Appl. Phys. Lett., 123, 162102, (2023) - Papier régulier

⋄ Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy
Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet
Phys. Stat. Sol. A, 20, 2200841 , (2023) - Papier régulier

⋄ Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics
J. Mehta, I. Abid, R. Elwaradi, Y. Cordier, and F. Medjdoub
Advances in Electrical Engineering, Electronics and Energy, 5, 100263, (2023) - Papier régulier

⋄ Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications
R. Elwaradi, E. Frayssinet, S. Chenot, Y. Bouyer, M. Nemoz, Y. Cordier
Microelectron Eng, 277, 112017, (2023) - Article de conférence

⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte
Microelectron Eng, 276, 112009, (2023) - Article de conférence

⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Marie Lesecq, Yassine Fouzi, Ali Abboud, Nicolas Defrance, François Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude De Jaeger, Eric Frayssinet, Yvon Cordier
Microelectron Eng, 276, 111998, (2023) - Article de conférence

⋄ Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy
Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles
Microelectron Eng, 273, 111964, (2023) - Article de conférence

⋄ High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers
G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, G. Ducournau, Y. Roelens, Y. Cordier, M. Zaknoune
J. Electron. Mat., 52, 5249, (2023) - Papier régulier

⋄ High Al-content AlGaN channel high electron mobility transistors on silicon substrate
J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, and F. Medjdoub
Advances in Electrical Engineering, Electronics and Energy, 3, 100114, (2023) - Papier régulier

⋄ Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in Vertical GaN-on-GaN Schottky Barrier Diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Yvon Cordier and Dominique Planson
Micro and Nanostructures, 172, 207433, (2022) - Papier régulier

⋄ Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate
Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond and Farid Medjdoub
Electronics, 12, 2974, (2023) - Papier régulier

⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode
Atse Julien Eric N'Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong-Viet Phung, Frederic Morancho, Hassan Maher, Dominique Planson
Crystals, 13, 713, (2023) - Papier régulier

⋄ Effects of GaN channel downscaling in AlGaN-GaN high electron mobility transistor structures grown on AlN bulk substrate
R. Elwaradi, J. Mehta, T. H. Ngo, M. Nemoz, C. Bougerol, F. Medjdoub, Y. Cordier
J. Appl. Phys., 133, 145705, (2023) - Papier régulier

⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
APL Materials, 11, 031105, (2023) - Papier régulier

⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN
J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck
Appl. Phys. Lett., 122, 092402, (2023) - Papier régulier