Name : Denis Lefebvre
Status :
Grade : IR2
Team(s) : Opto
☎ : +33 4 93 95 4205
Functions
Activities
MBE, ZnO
Publications (68)
⋄ Influence of dynamic morphological modifications of atom probe specimens on the intensity of their photoluminescence spectra E. M. Weikum, P. Dalapati, G. Beainy, J. M. Chauveau, M. Hugues, D. Lefebvre, J. Houard, A. Vella, and L. Rigutti |
⋄ Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films R. Aristegui, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, I. Paradisanos, C. Robert, X. Marie, B. Urbaszek, S. Chenot, Y. Cordier, and B. Damilano |
⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
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⋄ Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature A. Jollivet, P. Quach, M. Tchernycheva, R. Ferreira, E. Di Russo, L. Rigutti, B. Vinter, N. le Biavan, D. Lefebvre, M. Hugues, J. M. Chauveau, and F. H. Julien |
⋄ Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells M.Montes Bajo, J.Tamayo-Arriola, N.Le Biavan, E.Martínez Castellano, D.Lefebvre, M.Hugues, J.-M.Chauveau, A.Hierro |
⋄ Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette, F. Vurpillot, E. Giraud, J.F. Carlin, R. Butté, N. Grandjean, N. Gogneau, L. Largeau, F. H. Julien, M. Tchernycheva, J.M. Chauveau and M. Hugues |
⋄ Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
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⋄ Terahertz Intersubband Electroluminescence from Nonpolar m-Plane ZnO Quantum Cascade Structures B. Meng, B. Hinkov, N. Le Biavan, H.T. Hoang, D. Lefebvre, M. Hugues, D. Stark, M. Franckié, A. Torres-Pardo, J. Tamayo-Arriola, M. M. Bajo, A. Hierro, G. Strasser, J. Faist*, and J.-M. Chauveau* |
⋄ Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe E. Di Russo, P. Dalapati, J. Houard, L. Venturi, I. Blum, S. Moldovan, N. Le Biavan, D. Lefebvre, M. Hugues, J.-M. Chauveau, D. Blavette, B. Deconihout, A. Vella, F. Vurpillot, and L. Rigutti |
⋄ Observation of Intersubband Absorption in ZnO Coupled Quantum Wells B. Meng, J. Tamayo-Arriola, N. Le Biavan, M. Montes Bajo, A. Torres-Pardo, M. Hugues, D. Lefebvre, A. Hierro, J.-M. Chauveau, J. Faist |
⋄ Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, J. Massies |
⋄ Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory R. Bardoux, T.y Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond |
⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova |
⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro |
⋄ Ga-doping of nonpolar m-plane ZnMgO with high Mg contents J.Tamayo-Arriola, M.Montes Bajo, N. Le Biavan, D.Lefebvre, A.Kurtz, J.M.Ulloa, M.Hugues, J.M.Chauveau, A.Hierro |
⋄ Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography E. Di Russo, F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J.F. Carlin, N. Grandjean, J.M. Chauveau, M. Hugues, I. Blum, W. Lefebvre, F. Vurpillot, D. Blavette, and L. Rigutti |
⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau |
⋄ Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
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⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz |
⋄ Transport of indirect excitons in ZnO quantum wells Y.Y. Kuznetsova, F. Fedichkin, P. Andreakou, E.V. Calman, L.V. Butov, P.Lefebvre, T. Bretagnon, T. Guillet, M. Vladimirova, C. Morhain,and J.M. Chauveau |
⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez |
⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier |
⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller,
T. Chassagne, M. Zielinski, M. Portail |
⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail |
⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001) A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel |
⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier |
⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier |
⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail |
⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111) A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier,
A. Tiberj, T. Chassagne, M. Zielinski |
⋄ Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells T. Guillet, T. Bretagnon, T. Taliercio, P. Lefebvre, B. Gil, C. Morhain, X.D. Tang |
⋄ Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, C. Morhain |
⋄ Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, X.D. Tang |
⋄ Spin-exchange interaction in ZnO-based quantum wells B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J.A. Sans, T. Taliercio, and C. Morhain |
⋄ Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al. |
⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond |
⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies |
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies |
⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies |
⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies |
⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies |
⋄ Composition analysis of semiconductor quantum wells by energy filtered convergent beam electron diffraction D. Jacob, J.M. Zuo, A. Lefebvre, Y. Cordier |
⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck |
⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies |
⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies |
⋄ Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
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⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies |
⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies |
⋄ From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié |
⋄ Isoelecrtonic traps in heavily doped GaAs:(In,N) R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié |
⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy J.M. Chauveau, Y. Androussi, A. Lefebvre, J. Di Persio, and Y. Cordier |
⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
⋄ Optical properties of self-assembled InGaN/GaN quantum dots T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies |
⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J. |
⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies |
⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald |
⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht |
Curriculum
