CNRS-CRHEA | Publications

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10 publications classées par date - Critères de recherche: Khoury

⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck
Phys. Rev. Applied, 16, 054040, (2021) - Papier régulier
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⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates

M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars
ACS Appl. Mater. Interfaces, 11, 50, 47106-47111, (2019) - Papier régulier

⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. Chow, P. Li, J. Kearns, A. A. Taylor, P. De Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars
Opt. Express, 27, 24154, (2019) - Papier régulier
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⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger
Phys. Stat. Sol. A, 10, 1700637, (2017) - Papier régulier
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⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez
J. Appl. Phys., 122, 105108, (2017) - Papier régulier
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⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire

M. Khoury, H. Li, L. Y. Kuritzky, A.J. Mughal, P. de Mierry, S. Nakamura, J.S. Speck, and S. P. DenBaars
Appl. Phys. Express., 10, 106501, (2017) - Papier régulier

⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. de Mierry, S. Nakamura, J. S. Speck, S. P. DenBaars
ACS Appl. Mater. Interfaces, 9, 36417, (2017) - Papier régulier

⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates

⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire

⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates

⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates

⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers

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