Fonctions

---

Activités

---

EPVOM, Nitrures d'éléments III (III-N)

Publications (113)

---

⋄ Highlighting the role of 3C‒SiC in the performance optimization of (Al,Ga)N‒based High‒Electron Mobility Transistors Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean‑Claude De Jaeger, Yvon Cordier Mat Sci Semicon Proc, 171,  107977, (2024) - Papier régulier

⋄ Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN F. Giannazzo, S.E. Panasci, E. Schiliro, G. Greco, F. Roccaforte, G. Sfuncia, G. Nicotra, M. Cannas, S. Agnello, E. Frayssinet, Y. Cordier, A. Michon, A. Koos, B. Pecz Appl. Surf. Sci., 631,  157513, (2023) - Papier régulier

⋄ High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, G. Ducournau, Y. Roelens, Y. Cordier, M. Zaknoune J. Electron. Mat., 52,  5249, (2023) - Papier régulier

⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq, Yassine Fouzi, Ali Abboud, Nicolas Defrance, François Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude De Jaeger, Eric Frayssinet, Yvon Cordier Microelectron Eng, 276,  111998, (2023) - Article de conférence

⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte Microelectron Eng, 276,  112009, (2023) - Article de conférence

⋄ Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications R. Elwaradi, E. Frayssinet, S. Chenot, Y. Bouyer, M. Nemoz, Y. Cordier Microelectron Eng, 277,  112017, (2023) - Article de conférence

⋄ Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet Phys. Stat. Sol. A, 20,  2200841 , (2023) - Papier régulier

⋄ Large area MoS2 films grown on sapphire and GaN substrates by pulsed laser deposition Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová-Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo Nanomaterials, 13,  2837, (2023) - Papier régulier

⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode Atse Julien Eric N'Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong-Viet Phung, Frederic Morancho, Hassan Maher, Dominique Planson Crystals, 13,  713, (2023) - Papier régulier

⋄ Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’Dohi, Heré Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson Microelectronics J, 128,  105575, (2022) - Papier régulier

⋄ A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells P. Quach, A. Jollivet, A. Babichev, N. Isac, M. Morassi, A. Lemaitre, P. A. Yunin, E. Frayssinet, P. de Mierry, M. Jeannin, A. Bousseksou, R. Colombelli, M. Tchernycheva, Y. Cordier, and F. H. Julien Appl. Phys. Lett., 120,  171103, (2022) - Papier régulier

⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier Solid State Electronics, 188,  108210, (2022) - Papier régulier

⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi Opt. Lett., 47,  1521, (2022) - Papier régulier

⋄ Comparison of lasing characteristics of GaN microdisks with different structures Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi J. Phys. D: Appl. Phys., 55,  355107, (2022) - Papier régulier

⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier Mat. Sci. For., 1062,  482-486, (2022) - Article de conférence

⋄ Micro Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson AIP. Adv, 12,  025126, (2022) - Papier régulier

⋄ Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples B. Orfao; G. Di Gioia; B. G. Vasallo; S. Pérez; J. Mateos; Y. Roelens; E. Frayssinet; Y. Cordier; M. Zaknoune; T. González J. Appl. Phys., 132,  044502, (2022) - Papier régulier

⋄ Comparison of lasing characteristics of GaN microdisks with different structures Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi, J. Phys. D: Appl. Phys., 55,  355107, (2022) - Papier régulier

⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès Crystals, 12,  1605, (2022) - Papier régulier

⋄ Fabrication, and DC and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger JVST B, 41,  0122022, (2022) - Papier régulier

⋄ Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in Vertical GaN-on-GaN Schottky Barrier Diodes P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Yvon Cordier and Dominique Planson Micro and Nanostructures, 172,  207433, (2022) - Papier régulier

⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier J. Cryst. Growth, 593,  126779, (2022) - Papier régulier

⋄ Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution N. Al Taradeh, E. Frayssinet, C. Rodriguez, F. Morancho, C. Sonneville, L.-V. Phung, A. Soltani, F. Tendille, Y. Cordier, H. Maher Energies, 12,  4241, (2021) - Papier régulier

⋄ Proton Energy Loss in GaN Jean-Yves Duboz,* Julie Zucchi, Eric Frayssinet, Sébastien Chenot, Maxime Hugues, Jean-Claude Grini, and Joël Hérault Phys. Stat. Sol. B, ,  2100167, (2021) - Papier régulier

⋄ Whispering-gallery mode InGaN microdisks on GaN substrates H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi Opt. Express, 29,  21280, (2021) - Papier régulier

⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud Appl. Phys. Lett., 117,  121103, (2020) - Papier régulier

⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover Sci Rep., 10,  18919, (2020) - Papier régulier

⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud Opt. Lett., 45,  4276, (2020) - Papier régulier

⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier Phys. Stat. Sol. A, 217,7,  1900760, (2020) - Papier régulier

⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier Semicond. Sci. Tech., 36,  024001, (2020) - Papier régulier

⋄ Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies M. Bah, D. Valente, M. Lesecq, N. Defrance, M. Garcia Barros, J-C. De Jaeger, E. Frayssinet, R. Comyn, T.H. Ngo, D. Alquier, Y. Cordier Sci Rep., 10,  14166, (2020) - Papier régulier

⋄ New barrier layer design for the fabrication of GaN-MIS-HEMT Normally-off transistor F. Cozette, B. Hassan, C. Rodriguez, E. Frayssinet, R. Comyn, F. Lecourt, N. Defrance, N. Labat, F. Boone, A. Soltani, A. Jaouad, Y. Cordier, H. Maher Semicond. Sci. Tech., 36,  034002, (2020) - Papier régulier

⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie, N. Nahas, Y. Cordier J. Cryst. Growth, 552,  125911, (2020) - Papier régulier

⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud Sci Rep., 9,  18095, (2019) - Papier régulier

⋄ GaN Schottky diodes for proton beam monitoring J.-Y. Duboz, J. Zucchi, E. Frayssinet, P. Chalbet, S. Chenot, M. Hugues, J.-C. Grini, R. Trimaud, M. Vidal and J. Hérault Biomed. Phys. Eng. Express, 5,  025015, (2019) - Papier régulier

⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud Opt. Express, 27,  11800, (2019) - Papier régulier

⋄ High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors F. Giannazzo, G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, F. Roccaforte, F. Iucolano, S. Ravesi, E. Frayssinet, A. Michon, Y. Cordier ACS Appl. Electron. Mater., 1,  2342, (2019) - Papier régulier

⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier Phys. Stat. Sol. A, 217,  1900760, (2019) - Papier régulier

⋄ 2 W/mm power density of an AlGaN/GaN HEMT grown on Free-Standing GaN Substrate at 40 GHz, Semiconductor Science and Technology M.R. Irekti, M. Lesecq, N. Defrance, E. Okada, E. Frayssinet, Y. Cordier, J.G. Tartarin, J.C. De Jaeger Semicond. Sci. Tech., 34,  12LT01, (2019) - Papier régulier

⋄ Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates A. Jollivet, M. Tchernycheva, V. Trinité, E. Frayssinet, P. De Mierry, Y. Cordier and F.H. Julien Appl. Phys. Lett., 115,  261103, (2019) - Papier régulier

⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz J. Cryst. Growth, 507,  220, (2019) - Papier régulier

⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud ACS Photonics, 5,  3643, (2018) - Papier régulier

⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès J. Appl. Phys., 123,  215701, (2018) - Papier régulier

⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier Phys. Stat. Sol. B, 255(5),  1700399, (2018) - Papier régulier

⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel IEEE Photonic Tech L, 30,  1567, (2018) - Papier régulier

⋄ A combined growth process for state-of-the-art GaN on silicon G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond Phys. Stat. Sol. A, 4,  1600449, (2017) - Papier régulier

⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref Current Applied Physics, 17,  1601-1608, (2017) - Papier régulier

⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier Phys. Stat. Sol. A, 214,  1600419, (2017) - Article de conférence

⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger Phys. Stat. Sol. A, 10,  1700637, (2017) - Papier régulier

⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier Phys. Stat. Sol. A, 215(9),  1700642, (2017) - Papier régulier

⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond Phys. Stat. Sol. A, 4,  1600450, (2017) - Papier régulier

⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier Phys. Stat. Sol. A, 215(10),  1700653, (2017) - Papier régulier

⋄ Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher J. Micromech. Microeng., 26,  105015, (2016) - Papier régulier

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz J. Cryst. Growth, 433,  165-171, (2016) - Papier régulier

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond Phys. Stat. Sol. A, 212,  2297–2301, (2015) - Papier régulier

⋄ On the Correlation Between Kink Effect and Effective Mobility in InAlN/GaN HEMTs P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquiere, J. De Jaeger, E. Frayssinet, Y. Cordier Proc. of the 9th European Microwave Integrated Circuit Conference, ,  88-91, (2014) - Article de conférence

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger Phys. Stat. Sol. C, 3-4,  498-501, (2014) - Article de conférence

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi J. Cryst. Growth, 398,  23, (2014) - Papier régulier

⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies Proc. SPIE, 1G,  8986, (2014) - Article de conférence - invité

⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies Appl. Phys. Express., 6,  092105, (2013) - Papier régulier

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès Semicond. Sci. Tech., 28,  035006, (2013) - Papier régulier

⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz Phys. Stat. Sol. C, 9,  931, (2012) - Article de conférence

⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier APEX, 5,  025504, (2012) - Papier régulier

⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck J. Cryst. Growth, 338,  20, (2012) - Papier régulier

⋄ Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson J. Cryst. Growth, 353,  108, (2012) - Papier régulier

⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond J. Appl. Phys., 111,  023511, (2012) - Papier régulier

⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier Phys. Stat. Sol. C, 10,  425, (2012) - Article de conférence

⋄ Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes R. Charash, H. Kim-Chauveau, A. Vajpeyi, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, J.Y. Duboz, and B. Corbett Phys. Stat. Sol. C, 8,  2378, (2011) - Article de conférence

⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet Appl. Phys. Express, 4,  072001, (2011) - Papier régulier

⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof Appl. Phys. Lett., 98,  141104, (2011) - Papier régulier

⋄ Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard J. Cryst. Growth, 314,  85-91, (2011) - Papier régulier

⋄ Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard Phys. Stat. Sol. C, 8,  1479-1482, (2011) - Article de conférence

⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof Electron Dev. Lett., 32,  1561, (2011) - Papier régulier

⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule J. Phys.: Conf. Ser., 210,  012026, (2010) - Article de conférence

⋄ GaN quantum dots in (Al,Ga)N-based Microdisks S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond J. Phys.: Conf. Ser., 210,  012005, (2010) - Article de conférence

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond J. Cryst. Growth, 312 - n° 19,  2683-2688 , (2010) - Papier régulier

⋄ X-ray detectors based on GaN Schottky diodes J.Y. Duboz, E. Frayssinet, S. Chenot, J.L. Reverchon, M. Idir Appl. Phys. Lett., 97,  163504, (2010) - Papier régulier

⋄ Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding R. Charash, H. Kim-Chauveau, J.M. Lamy, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J.Y. Duboz, A. Hangleiter and B. Corbett Appl. Phys. Lett., 98,  201112, (2010) - Papier régulier

⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule J. Appl. Phys., 108,  043508, (2010) - Papier régulier

⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond Applied Physics Express, 2,  051003, (2009) - Papier régulier

⋄ Epitaxial aluminium nitride on patterned silicon J. Moreno, E. Frayssinet, F. Semond et al. Materials Science in Semicond. Processing, 12,  31, (2009) - Article de conférence

⋄ Development of thick GaN-on-silicon layers for rectifier applications H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz EWMOVPE-XIII, D.14,  343-346, (2009) - Article de conférence - invité

⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux Photonics and Nanostructures, 7,  26, (2009) - Article de conférence

⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule Appl. Phys. Lett., 95,  121102, (2009) - Papier régulier

⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir SPIE procedings, 7474,  74741G, (2009) - Article de conférence

⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng Electron Dev. Lett., 30,  1308, (2009) - Papier régulier

⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet Phys. Rev. B, 79,  125302, (2009) - Papier régulier

⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001) Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond Phys. Stat. Sol. C, 6 - S2,  1020-1023, (2009) - Article de conférence

⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary Materials Science in Semiconductor Processing, 12,  16-20, (2009) - Article de conférence

⋄ Interfacial properties of AlN and oxidized AlN on Si M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán. surface science, 604,  63, (2009) - Papier régulier

⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz EAS Publications Series, 37,  207-215, (2009) - Article de conférence

⋄ Molecular Beam Epitaxy of AlN Layers on Si (111) J.C. Moreno, E. Frayssinet, F. Semond et al. MRS symposium proceeding, 1068,  141-145, (2008) - Article de conférence

⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110) Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond IEEE Electron Device Letters, 29,  1187-1189, (2008) - Papier régulier

⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies Applied Physics Express, 1,  121101, (2008) - Papier régulier

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies MRS symposium proceedings, 1068,  51-56, (2008) - Article de conférence

⋄ Highly sensitive strained AlN on Si(111) resonators M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre Sensors and Actuators A: Physical, 150,  64-68, (2008) - Papier régulier

⋄ Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy T.D. Veal, P.D.C. King, S.A. Hatfield, L.R. Bailey, C.F. McConville, B. Martel, J.C. Moreno, E. Frayssinet, F. Semond, and J. Zúñiga-Pérez Appl. Phys. Lett., 93,  202108, (2008) - Papier régulier

⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux Phys. Stat. Sol. (a), 204, n°1,  282-289, (2007) - Article de conférence

⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie Journal de Physique IV, 132,  365-368, (2006) - Article de conférence

⋄ Characterisation of differently grown GaN epilayers by time-resolved four-wave mixing technique K. Jarašiunas, T. Malinauskas, R. Aleksiejunas, M. Sudžius, E. Frayssinet, B. Beaumont, J.P. Faurie and P. Gibart Phys. Stat. Sol. (a), 202, No. 4,  566– 571, (2005) - Article de conférence

⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie Phys. Stat. Sol. (c), 2, No. 7,  2195-2198, (2005) - Article de conférence

⋄ Transmission electron microscopy of GaN layers grown by ELO and micro-ELO techniques B. Pécz, Zs. Makkai, E. Frayssinet, B. Beaumont and P. Gibart Phys. Stat. Sol. (c), 2, No. 4,  1310-1313, (2005) - Article de conférence

⋄ High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density D. Gogova, H. Larsson, A. Kasic, G. Reza Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J.P. Faurie, B. Beaumont and P. Gibart, Jpn. J. Appl. Phys, 44,  1181-1185, (2005) - Papier régulier

⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie J. Cryst. Growth, 278/1-4,  383-386, (2005) - Article de conférence

⋄ Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-UV J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schule, E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart J. Appl. Phys., 95,  8275, (2004) - Papier régulier

⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko Phys. Stat. Sol. (b), 235,  20, (2002) - Article de conférence

⋄ Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures W. Knap, E. Borovitskaya, M.S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewsk, P. Prystawko, M. Leszczynski, I. Grzegory Appl. Phys. Lett., 80,  1228, (2002) - Papier régulier

⋄ Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko Appl. Phys. Lett., 77,  1348, (2000) - Papier régulier

⋄ Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski Mater. Res. Soc. Symp. Proc., 639,  G7.5, (2000) - …

⋄ High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski Mater. Res. Soc. Symp. Proc., 639,  G7.3, (2000) - …

⋄ Infrared studies on GaN single crystals and homoepitaxial layers E. Frayssinet, W. Knap, P. Prystawko, M. Leszczynski, I.Grzegory, T. Suski, B. Beaumont, P. Gibart J. Cryst. Growth, 218,  161, (2000) - …

⋄ High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude Appl. Phys. Lett., 77,  2551, (2000) - Papier régulier

⋄ GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu Appl. Phys. Lett., 76,  3807, (2000) - Papier régulier

Thèse

---

Elaboration et étude d'hétérojonctions GaN/AlGaN déposées sur GaN massif
Thèse soutenue en 2000 à Montpellier 2

Cursus

---