Publications (145)

⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy

B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva
Nanotechnology, 34, 245602, (2022) - Papier régulier

⋄ Coulomb blockade: Towards charge control of self-assembled GaN quantum dots at room temperature

C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck
Appl. Phys. Lett., 120, 012105, (2022) - Papier régulier

⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes

Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano,
Phys. Stat. Sol. A, 219, 2200055, (2022) - Papier régulier

⋄ Comparison of lasing characteristics of GaN microdisks with different structures

Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi,
J. Phys. D: Appl. Phys., 55, 355107, (2022) - Papier régulier

⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 106, 035429, (2022) - Papier régulier

⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil,
J. Appl. Phys., 132, 035302, (2022) - Papier régulier

⋄ Comparison of lasing characteristics of GaN microdisks with different structures

Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55, 355107, (2022) - Papier régulier

⋄ Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature

A. Jollivet, P. Quach, M. Tchernycheva, R. Ferreira, E. Di Russo, L. Rigutti, B. Vinter, N. le Biavan, D. Lefebvre, M. Hugues, J. M. Chauveau, and F. H. Julien
Phys. Rev. B, 105, 195143, (2022) - Papier régulier

⋄ Low-loss GaN-on-insulator platform for integrated photonics

Opt. Express, 30, 20737, (2022) - Papier régulier

⋄ Evidence of Piezoelectric Potential and Screening Effect in Single Highly Doped ZnO: Ga and ZnO: Al Nanowires by Advanced Scanning Probe Microscopy

O. Synhaivskyi, D. Albertini, P. Gaffuri, J.-M. Chauveau, V. Consonni, B. Gautier, G. Bremond
J. Phys. Chem. C, 125, 15373, (2021) - Papier régulier

⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks

Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47, 1521, (2022) - Papier régulier

⋄ Porous Nitride LEDs

Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva
ACS Photonics, 9, 1256, (2022) - Papier régulier

⋄ Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

A. Bjelajac, M. Gromovyi, E. Sakat, B. Wang, G. Patriarche, N. Pauc, V. Calvo, P. Boucaud, F. Boeuf, A. Chelnokov, V. Reboud, M. Frauenrath, J.-M. Hartmann, and M. El Kurdi
Opt. Express, 30, 3954, (2022) - Papier régulier

⋄ Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, et al.
J. Appl. Phys., 130 (2), 025704, (2021) - Papier régulier

⋄ DUV LEDs based on AlGaN Quantum Dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686, 116860T, (2021) - Article de conférence - invité

⋄ GeSnOI mid-infrared laser technology

B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, M. El Kurdi
Light Sci Appl, 10, 232, (2021) - Papier régulier

⋄ Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells

M.Montes Bajo, J.Tamayo-Arriola, N.Le Biavan, E.Martínez Castellano, D.Lefebvre, M.Hugues, J.-M.Chauveau, A.Hierro
Appl. Surf. Sci., 567, 150816, (2021) - Papier régulier

⋄ Proton Energy Loss in GaN

Jean-Yves Duboz,* Julie Zucchi, Eric Frayssinet, Sébastien Chenot, Maxime Hugues, Jean-Claude Grini, and Joël Hérault
Phys. Stat. Sol. B, , 2100167, (2021) - Papier régulier

⋄ Whispering-gallery mode InGaN microdisks on GaN substrates

H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29, 21280, (2021) - Papier régulier

⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0, 0, (2021) - Papier régulier

⋄ Etching of m-plane Zn(Mg)O epitaxial films and its impact on surface leakage currents

Borislav Hinkov, Hanh T Hoang, Maxime Hugues, Jean-Michel Chauveau and Gottfried Strasser
Semicond. Sci. Tech., 36, 035023, (2021) - Papier régulier

⋄ Paper Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

L. Abou-Hamdan, S. Hamyeh, A. Iskandar, R. Tauk, J. Brault, M. Tabbal, P.M. Adam, M. Kazan
Nanotechnology, 32, 115703, (2020) - Papier régulier

⋄ Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template

Hongjian Li, Haojun Zhang, Panpan Li, Matthew Wong, Yi Chao Chow, S. Pinna, J. Klamkin, P. Demierry, J. Speck, S. Nakamura, S. Denbaars
J. Phys. Photonics, 2,3, 031003, (2020) - Papier régulier

⋄ Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
Phys. Rev. B, 103, 045308, (2021) - Papier régulier

⋄ Terahertz Intersubband Electroluminescence from Nonpolar m-Plane ZnO Quantum Cascade Structures

B. Meng, B. Hinkov, N. Le Biavan, H.T. Hoang, D. Lefebvre, M. Hugues, D. Stark, M. Franckié, A. Torres-Pardo, J. Tamayo-Arriola, M. M. Bajo, A. Hierro, G. Strasser, J. Faist*, and J.-M. Chauveau*
ACS Photonics, 8, 343–349, (2021) - Papier régulier

⋄ A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy

J. Houard, A. Normand, E. Di Russo, C. Bacchi, P. Dalapati, G. Beainy, S. Moldovan, G. da Costa, F. Delaroche, C. Vaudolon, J.M. Chauveau, Maxime Hugues, D. Blavette, B. Déconihout, A. Vella, F. Vurpillot, L. Rigutti
Rev. Sci. Instrum., 91, 083704, (2020) - Papier régulier

⋄ Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

P. Ruterana, M. Morales, N. Chery, T.H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano, and B. Gil
J. Appl. Phys., 128, 223102, (2020) - Papier régulier

⋄ Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

E. Di Russo, P. Dalapati, J. Houard, L. Venturi, I. Blum, S. Moldovan, N. Le Biavan, D. Lefebvre, M. Hugues, J.-M. Chauveau, D. Blavette, B. Deconihout, A. Vella, F. Vurpillot, and L. Rigutti
Nano Lett., 20, 8733, (2020) - Papier régulier

⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil
Crystals, 10, 1097, (2020) - Papier régulier

⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping

Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet
Appl. Phys. Express., 13, 115504, (2020) - Papier régulier

⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover
Sci Rep., 10, 18919, (2020) - Papier régulier

⋄ Full InGaN red light emitting diodes

A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A.M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J.C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta
J. Appl. Phys., 128, 135704, (2020) - Papier régulier

⋄ Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.M. Hartmann, M. El Kurdi
ACS Photonics, 7, 2713, (2020) - Papier régulier

⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers

F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117, 121103, (2020) - Papier régulier

⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras
J. Appl. Phys., 128, 085703, (2020) - Papier régulier

⋄ Photoassisted chemical smoothing of AlGaN surface after laser lift-off

Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, and Baoping Zhang
JVST B, 38, 042207, (2020) - Papier régulier

⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45, 4276, (2020) - Papier régulier

⋄ Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, P. Boucaud
Appl. Phys. Lett., 105, 11104, (2014) - Papier régulier

⋄ Observation of Intersubband Absorption in ZnO Coupled Quantum Wells

B. Meng, J. Tamayo-Arriola, N. Le Biavan, M. Montes Bajo, A. Torres-Pardo, M. Hugues, D. Lefebvre, A. Hierro, J.-M. Chauveau, J. Faist
Phys. Rev. Applied, 054007, 12, (2019) - Papier régulier

⋄ Lasing up to 380 K in a sublimated GaN nanowire

S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi
Appl. Phys. Lett., 116, 223101, (2020) - Papier régulier

⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3, 4054, (2020) - Papier régulier

⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper
Nanotechnology, 31, 465706, (2020) - Papier régulier

⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10, 5642, (2020) - Papier régulier

⋄ Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grutzmacher, M. El Kurdi
Nat. Photonics, 14, 375, (2020) - Papier régulier

⋄ A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Blandine Alloing, Mathieu Leroux, Seoung-Hwan Park, Julien Brault and Yong-Hoon Cho
Nanoscale Adv., 2, 1449-1455, (2020) - Papier régulier

⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz
J. Appl. Phys., 126, 224503, (2019) - Papier régulier

⋄ Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates

A. Bengoechea-Encabo, S. Albert, M Müller, M–Y. Xie, P Veit, F. Bertram, M. A. Sanchez-Garcia, J. Zúñiga-Pérez, P. de Mierry, J. Christen
Nanotechnology, 28, 365704, (2017) - Papier régulier

⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire

M. Khoury, H. Li, L. Y. Kuritzky, A.J. Mughal, P. de Mierry, S. Nakamura, J.S. Speck, and S. P. DenBaars
Appl. Phys. Express., 10, 106501, (2017) - Papier régulier

⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. de Mierry, S. Nakamura, J. S. Speck, S. P. DenBaars
ACS Appl. Mater. Interfaces, 9, 36417, (2017) - Papier régulier

⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9, 18095, (2019) - Papier régulier

⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li
Phys. Stat. Sol. A, 216(24), 1900655, (2019) - Papier régulier

⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126, 205701, (2019) - Papier régulier

⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics

S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi
ACS Photonics, 6,12, 3321-3330, (2019) - Papier régulier

⋄ Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

P. Henning , P. Horenburg, H. Bremers, U. Rossow, F. Tendille, P. Vennégués , P. de Mierry, J. Zúñiga-Pérez , and A. Hangleiter
Appl. Phys. Lett., 115, 202103, (2019) - Papier régulier

⋄ Theoretical estimation of tunnel currents in hetero-junctions: the special case of nitride tunnel junctions

J.Y. Duboz and B. Vinter
J. Appl. Phys., 126, 174501, (2019) - Papier régulier

⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials

P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5, 52, (2019) - Papier régulier

⋄ (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, and J.-Y. Duboz
AIP. Adv, 9, 055101, (2019) - Papier régulier

⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. Chow, P. Li, J. Kearns, A. A. Taylor, P. De Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars
Opt. Express, 27, 24154, (2019) - Papier régulier

⋄ Optical Phase Transition in Semiconductor Quantum Metamaterials

A. Hierro, M. Montes Bajo, M. Ferraro, J. Tamayo-Arriola, N. Le Biavan, M. Hugues, J. M. Ulloa, M. Giudici, J.-M. Chauveau, P. Genevet
Phys. Rev. Lett., 123 , 117401 , (2019) - Papier régulier

⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova
Nano Lett., 19, 4911, (2019) - Papier régulier

⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits

F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27, 11800, (2019) - Papier régulier

⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence

M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro
Phys. Rev. Applied, 10, 034022, (2018) - Papier régulier

⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12, 045007, (2019) - Papier régulier

⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression

R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet
J. Appl. Phys., 125, 035703, (2019) - Papier régulier

⋄ GaN Schottky diodes for proton beam monitoring

J.-Y. Duboz, J. Zucchi, E. Frayssinet, P. Chalbet, S. Chenot, M. Hugues, J.-C. Grini, R. Trimaud, M. Vidal and J. Hérault
Biomed. Phys. Eng. Express, 5, 025015, (2019) - Papier régulier

⋄ Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells

A. Jollivet, B. Hinkov, S. Pirotta, H. Hoang, S. Derelle, J. Jaeck, M. Tchernycheva, R. Colombelli, A. Bousseksou, M. Hugues, N. Le Biavan, J. Tamayo-Arriola, M. Montes Bajo, L. Rigutti, A. Hierro, G. Strasser, J.M. Chauveau, and F. H. Julien
Appl. Phys. Lett., 113, 251104, (2018) - Papier régulier

⋄ Universal description of III-V/Si epitaxial growth processes

I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J.-B. Rodriguez, E. Tournié, R. Bernard, A. Létoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, and C. Cornet
Phys. Rev. Materials, 2, 060401(R), (2018) - Papier régulier

⋄ Enhanced excitonic emission efficiency in porous GaN

T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies
Sci Rep., 8, 15767, (2018) - Papier régulier

⋄ Solving thermal issues in tensile-strained Ge microdisks

A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, P. Boucaud
Opt. Express, 26, 28376, (2018) - Papier régulier

⋄ Well-ordered ZnO nanowires with controllable inclination on semipolar ZnO surfaces by chemical bath deposition

T. Cossuet, H. Roussel, J.M. Chauveau, O. Chaix-Pluchery, J.L. Thomassin, E. Appert and Vincent Consonni
Nanotechnology, 29, 475601, (2018) - Papier régulier

⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel
IEEE Photonic Tech L, 30, 1567, (2018) - Papier régulier

⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5, 3643, (2018) - Papier régulier

⋄ Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells

A. Hierro, M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J.M. Ulloa, N. Le Biavan, R. Peretti, F. Julien, J. Faist, J.-M. Chauveau
Proc. SPIE, 10533, 105331K, (2018) - Article de conférence - invité

⋄ Evidence of exciton complexes in non polar ZnO/(Zn,Mg)O A-plane quantum well

M.J. Mohammed Ali, J.M.Chauveau, T.Bretagnon
Superlattices Microstruct., 120, 410, (2018) - Papier régulier

⋄ Time-resolved photoluminescence investigation of (Mg,Zn)O alloy growth on a non-polar plane

M.J. Mohammed Ali, J.M. Chauveau, T. Bretagnon
Superlattices Microstruct., 116, 105, (2018) - Papier régulier

⋄ Ga-doping of nonpolar m-plane ZnMgO with high Mg contents

J.Tamayo-Arriola, M.Montes Bajo, N. Le Biavan, D.Lefebvre, A.Kurtz, J.M.Ulloa, M.Hugues, J.M.Chauveau, A.Hierro
J. Alloys and Comp., 766, 436, (2018) - Papier régulier

⋄ Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

E. Di Russo, F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J.F. Carlin, N. Grandjean, J.M. Chauveau, M. Hugues, I. Blum, W. Lefebvre, F. Vurpillot, D. Blavette, and L. Rigutti
J. Phys. Chem. C, 122, 16704, (2018) - Papier régulier

⋄ Multisubband Plasmons in Doped ZnO Quantum Wells

M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J. M. Ulloa, N. Le Biavan, R. Peretti, F. H. Julien, J. Faist, J.M. Chauveau, and A. Hierro
Phys. Rev. Applied, 10, 024005, (2018) - Papier régulier

⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499, 40, (2018) - Papier régulier

⋄ Loss analysis in nitride deep ultraviolet planar cavity

Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang
J. Nanophotonics, 12, 043504, (2018) - Papier régulier

⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33, 075007, (2018) - Papier régulier

⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil
Superlattices Microstruct., 114, 161, (2018) - Papier régulier

⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 255(5), 1700392, (2017) - Papier régulier

⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25, 33243, (2017) - Papier régulier

⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600450, (2017) - Papier régulier

⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions

N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett., 111, 231903, (2017) - Papier régulier

⋄ Laser damage of free-standing nanometer membranes

Y. Morimoto, I. Roland, S. Rennesson, F. Semond, P. Boucaud and P. Baum
J. Appl. Phys., 122, 215303, (2017) - Papier régulier

⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111, 131103, (2017) - Papier régulier

⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red

T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil
Superlattices Microstruct., 113, 129-134, (2017) - Papier régulier

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477, 262, (2017) - Papier régulier

⋄ Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25, 23035-23044, (2017) - Papier régulier

⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122, 085706, (2017) - Papier régulier

⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

T.H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry
J. Appl. Phys., 122, 063103, (2017) - Papier régulier

⋄ Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures

E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
Appl. Phys. Lett., 111, 032108, (2017) - Papier régulier

⋄ Intersubband absorption in m-plane ZnO/ZnMgO MQWs

M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, M. Tchernycheva, F. H. Julien, R. Peretti, J. Faist, M. Hugues, J. M. Chauveau, A. Hierro
Proc. SPIE, 10105, 101050O-1, (2017) - Article de conférence - invité

⋄ Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation

T. Kaldewey, S. Lüker, A. V. Kuhlmann, S. R. Valentin, J.M. Chauveau, A. Ludwig, A. D. Wieck, D. E. Reiter, T. Kuhn, and R. J. Warburton
Phys. Rev. B, 95, 241306(R), (2017) - Papier régulier

⋄ Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
Appl. Phys. Lett., 110, 131102, (2017) - Papier régulier

⋄ Non-metal to metal transition in n-type ZnO single crystal materials

S. Brochen, G. Feuillet, J.L. Santailler, R. Obrecht, M. Lafossas, P. Ferret, J.M. Chauveau,and J. Pernot
J. Appl. Phys., 121, 095704, (2017) - Papier régulier

⋄ Deep-level spectroscopy in metal–insulator–semiconductor structures

A. Kurtz, E. Muñoz, J.M. Chauveau and A. Hierro
J. Phys. D: Appl. Phys., 50, 065104 , (2017) - Papier régulier

⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet
Appl. Phys. Lett., 109, 231101, (2016) - Papier régulier

⋄ Ultraviolet light emitting diodes using III-N quantum dots

J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55, 95, (2016) - Papier invité

⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6, 34191, (2016) - Papier régulier

⋄ GaN quantum dot polarity determination by X-ray photoelectron diffraction

O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka
Appl. Surf. Sci., 389, 1156, (2016) - Papier régulier

⋄ High temperature electrical transport study of Si-doped AlN

S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault
Superlattices Microstruct., 98, 253, (2016) - Papier régulier

⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality

F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109, 082101, (2016) - Papier régulier

⋄ Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud
ACS Photonics, 3, 1240, (2016) - Papier régulier

⋄ Anisotropic optical properties of a homoepitaxial (Zn, Mg) O/ZnO quantum well grown on a‐plane ZnO substrate

M. Ali, J. Mohammed, J.M. Chauveau, T. Bretagnon
Phys. Stat. Sol. C, 13, 598, (2016) - Article de conférence

⋄ Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy

L. Wang, S. Guillemin, J.M. Chauveau, V. Sallet, F. Jomard, R. Brenier, V. Consonni, G. Brémond
Phys. Stat. Sol. C, 13, 576, (2016) - Article de conférence

⋄ ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

A. Hierro, G. Tabares, M. Lopez-Ponce, J. M. Ulloa, A. Kurtz, E. Muñoz, V. Marín-Borrás, V. Muñoz-Sanjose, J.M. Chauveau
Proc. SPIE, 9749, 97490W, (2016) - Article de conférence - invité

⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses

D. H. Rich, O. Moshe, B. Damilano and J. Massies
AIP. Proceedings, 1399, 453, (2011) - Article de conférence

⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots

J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566, 73, (2012) - Article de conférence

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986, 89860Z, (2014) - Article de conférence

⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363, 93630Z, (2015) - Article de conférence

⋄ Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

M.D. Neumann, N. Esser, J.M. Chauveau, R. Goldhahn and M. Feneberg
Appl. Phys. Lett., 108, 221105, (2016) - Papier régulier

⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L, 28, 1661, (2016) - Papier régulier

⋄ Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L. Wang, J.M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C Sartel, G. Brémond
Appl. Phys. Lett., 108, 132103, (2016) - Papier régulier

⋄ Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry
Jpn. J. Appl. Phys., 55, 05FG10, (2016) - Papier régulier

⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55, 05FG06, (2016) - Papier régulier

⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth, 434, 25, (2016) - Papier régulier

⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

B. Damilano, J. Brault and J. Massies
J. Appl. Phys., 118, 024304, (2015) - Papier régulier

⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth, 404, 177-183, (2014) - Papier régulier

⋄ The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures

D. Rosales, T.H. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattice Microst, 76, 9-15, (2014) - Papier régulier

⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter

B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G, 8986, (2014) - Article de conférence - invité

⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)

D.H. Rich, O. Moshe, B. Damilano, and J. Massies
Phys. Stat. Sol. C, 9, 1011, (2012) - Article de conférence

⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)

O. Moshe, D. H. Rich, B. Damilano, and J. Massies
J. Phys. Cond. Mat., 44, 505101, (2011) - Papier régulier

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109, 053514, (2011) - Papier régulier

⋄ The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates

H. Kim-Chauveau, P. de Mierry, J.M. Chauveau and J.Y. Duboz
J. Cryst. Growth, 316, 30, (2011) - Papier régulier

⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth

N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett., 5, 1878, (2010) - Article de conférence

⋄ Blue-green and white color tuning of monolithic light emitting diodes

B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108, 073115, (2010) - Papier régulier

⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies
J. Appl. Phys., 108, 083510, (2010) - Papier régulier

⋄ Mosaicity and stress effects on luminescence properties of GaNMosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T.A. Lafford, Z.Benzarti, I. Halidou, Z. Bougrioua, B. El Jani
Phys. Stat. Sol. A, 208, 2042, (2008) - Article de conférence

⋄ Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua
Vacuum, 84, 228, (2009) - Article de conférence

⋄ Electrical behaviour of lateral Al/n-GaN/Al structures

Z.J. Horvath, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pecza
App. Surf. Science, 256, 5614, (2010) - Article de conférence

⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, and J. Massies
J. Appl. Phys., 108, 033104, (2010) - Papier régulier

⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

O. Moshe, D.H. Rich, B. Damilano and J. Massies
J. Vac. Sci.Technol.B, 28, C5E25, (2010) - Papier régulier

⋄ Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study

B. Boudjelida, I. Gee, J. Evans-Freeman, S.A. Clark, M. Azize, J.M. Bethoux, and P. de Mierry
Phys. Stat. Sol. C, 3, 1823, (2006) - Article de conférence

⋄ 200 Mbit/s Data Transmission through 100 Meters of Plastic Optical Fibre with Nitride LEDs

M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont, and K. Panzer
Electron. Lett., 38, 1457, (2002) - Papier régulier

⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors

Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
Phys. Stat. Sol. C, 6, 1432, (2009) - Article de conférence

⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C, 6, 1424, (2009) - Article de conférence

⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3, 200983426, (2010) - Article de conférence

⋄ AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging

J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz
SPIE procedings, 6744, 674417, (2007) - Article de conférence

⋄ In-plane anisotropy characteristics of GaN epilayers grown on A-face sapphire substrates

HJ. Kim-Chauveau, P. De Mierry, H. Cabane, and D. Gindhart
J. Appl. Phys., 104, 113516, (2008) - Papier régulier

⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties

M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c), 4, No. 1, 137-140, (2007) - Article de conférence

⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm

M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3979, (2006) - Article de conférence

⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate

M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3848, (2006) - Article de conférence