The consortium is constituted by 4 partners CRHEA, L2C, CIMAP, and C2N which are public research laboratories from the CNRS and French universities.

CRHEA, Valbonne, is mainly involved in the epitaxial growth of semiconductor materials (GaN, ZnO, SiC) for applications in electronics and optoelectronics. The main scientists involved in the project are B. Damilano (coordinator), S. Vézian, E. Frayssinet, J. Brault, V. Brändli and J. Massies. CRHEA is essentially in charge of the fabrication of the GaN-based epitaxial structures and the fabrication of the nanoporous layers by selective area sublimation and also of their basic characterization.

L2C, Montpellier, is specialized in the measurement and the analysis of the optical properties of semiconductors. The scientists involved in the project are B. Gil (local responsible), G. Cassabois, P. Valvin. L2C measures the photoluminescence (time-resolved, power dependence, temperature dependence) of nanoporous GaN layers and (Ga,In)N/GaN quantum well structures in order to determine the carrier dynamics in such structures and in particular the internal quantum efficiency.

CIMAP, Caen. For the last 10 years, the group PM2E of CIMAP has been developing tools for the structural and chemical investigation of materials using transmission electron microscopy (P. Ruterana, M.P. Chauvat), combined with atomistic structural and electronic properties modeling (J. Chen, V. Hounkpati). The role of CIMAP is the structural analysis of the nanoporous layers made by selective area sublimation to determine the mechanisms behind the material quality improvement. The investigations are mainly carried out by using a double CS corrected 200 KV TEM, providing 0.8 Å spatial resolution, atomic resolution EDS and EELS. Quantitative X-ray reflectivity (XRR) analysis using synchrotron radiation or X-ray laboratory microsource as well as grazing incidence small angle X-ray scattering (SAXS) are carried out in order to precisely measure the layers pore sizes and porosity (M. Morales).

C2N, Orsay, is specialized in nanosciences and nanotechnologies with advanced semiconductor characterization and fabrication tools. The efforts of C2N in this project are coordinated by M. Tchernycheva, other participants will be F. Julien, N. Isac, O. Mauguin and a recruited poctdoc fellow. C2N is in charge of the LED process and characterization. Specific processes using p-contact based on transparent conductive oxides, but also on Ag-nanowires or graphene electrodes are adapted to nanoporous layers. Also, ALD passivation of the pore inner surface are implemented to reduce eventual surface recombinations and current leakages.