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Efficient (Ga,In)N light emitting diodes can be grown on Si substrate but this requires the use of thick and complex buffer layers (several micrometers) which is a bottleneck for the massive adoption of the Si as a substrate for the epitaxy of nitride semiconductor materials. In NAPOLI we propose to use the simplest possible buffer layer and to improve the material quality after growth by a porosification process based on selective area sublimation.

Nanoporous LED fabrication steps
Figure 1. The different steps for the fabrication of nanoporous light emitting diodes. From left to right: epitaxial growth of the (Ga,In)N/GaN light emitting diode structure on silicon substrate deposition of the self-organized SixNy nanomask, selective area sublimation of the non-masked (Ga,In)N/GaN regions, device processing.
Nanoporous LED fabrication steps
Figure 2. SEM images of porous GaN