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NAPOLI - ANR-18-CE24-0022

Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics
S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi
ACS Photonics (2019)

Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúńiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5, (2019)

Selective Area Sublimation of GaN for the Fabrication of Nano-Porous Structures and Arrays of Nanolasers
B. Damilano, S. Vézian, P.M. Coulon, T.H. Ngo, P. Valvin, J. Brault, V. Brandli, M. Portail, P. Shields, J. Massies and B. Gil
ICNS 06-11/07/2019 Seattle – Oral

Displacement Talbot Lithography for Nano-Engineering of III-Nitride Materials
P.M. Coulon, B. Damilano, B. Alloing, S. Walde, J. Enslin, G. Kusch, P. Chausse, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zuniga-Perez, M. Weyers, M. Kneissl, C. Trager-Cowan, R. Martin and P. Shields
ICNS 06-11/07/2019 Seattle – Poster

Selective area sublimation of GaN: from selforganized nanowires and nanoporous materials to ordered nanolaser arrays
B. Damilano
PDI Topical Workshop Epitaxial III-Nitride Semiconductor Nanowires, Berlin, June 6–7, 2019 – Invited Talk

Shaping of GaN using selective area sublimation
B. Damilano, S. Vézian, P.M. Coulon, T.H. Ngo, P. Valvin, J. Brault, V. Brändli, M. Portail, J. Massies, P.A. Shields, B. Gil
Workshop on Compound Semiconductor Devices and Integrated Circuits 2019. 17-19 Jun 2019 Cabourg– Oral

Enhanced excitonic emission efficiency in porous GaN and GaInN-GaN quantum wells grown along the polar direction
Thi Huong Ngo, B. Gil, T.V. Shubina, P. Valvin, B. Damilano, S. Vezian, and J. Massies
Compound Semiconductor Week Nara 19-23/05/2019 – Poster

Top-down nanoporous InGaN/GaN made by selective area sublimation for efficient light emission on Si substrate
B. Damilano, S. Vézian, J. Massies, T.H. Ngo, P. Valvin, T. Shubina, and B. Gil
IWN2018, Kanazawa, 11-16/11/2018– Oral

Influence of lateral confinement on the emission properties of deterministic InGaN quantum discs - from 1D to 3D confinement
S.T. Jagsch, B. Damilano, S. Vézian, A. Hoffmann, J. Massies, and M.R. Wagner
IWN2018, Kanazawa, 11-16/11/2018– Oral

Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, S. Walde, J. Enslin, G. Kusch, P. Chausse, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies
J. Zuniga-Pérez, M. Weyers, M. Kneissl, C. Trager-Cowan, R.W. Martin, and P.A. Shields
IWN2018, Kanazawa, 11-16/11/2018– Oral

Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12, 045007, (2019)

Enhanced Excitonic Emission Efficiency in Porous GaN
T.H. Ngo, B. Gil, T. Shubina, B; Damilano, S. Vézian, P. Valvin, J. Massies
Scientific Reports 8 (1), 15767 (2018)
https://doi.org/10.1038/s41598-018-34185-1

Top-down nanoporous InGaN/GaN made by selective area sublimation for efficient light emission on Si substrate
Oral presentation in IWN2018-Kanazawa 11-16/11/2018
B. Damilano, S. Vézian, J. Massies, T.H. Ngo, P. Valvin, B. Gil, T. Shubina