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Publications et conférences

Publications

• GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
  Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
  Journal of Crystal Growth, 433 (2016) 165-171, DOI: 10.1016/j.jcrysgro.2015.10.017
• Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
  Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, P. Bouchaib
  Physica Status Solidi C, Article first published online: 26 JAN 2012
• Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
  F.Natali, Y.Cordier, J.Massies, S.Vezian, B.Damilano, M.Leroux
  Physical Review B 79, 035328 (2009)
• Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
  F.Natali, Y.Cordier, C. Chaix, P.Bouchaib
  Journal of Crystal Growth 311 (2009) 2029–2032, doi:10.1016/j.jcrysgro.2008.11.089
• In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
  Y.Cordier, N.Baron, F.Semond, J.Massies, M.Binetti, B.Henninger, M.Besendahl, T.Zettler
  J. Crystal. Growth (301-302) pp.71-74 (2007)
• Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE
  Y.Cordier, F.Semond, J.Massies, M.Leroux, P.Lorenzini, C.Chaix
  J. Cryst. Growth (301/302) 434-436 (2007)
• Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
  Y.Cordier, F.Pruvost, F.Semond, J.Massies, M.Leroux, P.Lorenzini, C.Chaix
  Physica Status Solidi C 3, 2325-2328 (2006)

Conférences

• Comparison of the properties of Group-III nitrides grown by plasma-MBE and ammonia-MBE
  F. Natali, Y. Cordier, J. Massies, B. Damilano, S. Vezian, M. Leroux
  15th European Molecular Beam Epitaxy Workshop, March 8-11, 2009, Zakopane, Poland
• Optical observation of discrete width fluctuations in (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy using either Ga-rich or N-rich growth conditions
  F. Natali, Y. Cordier, J. Massies, S. Vezian, B. Damilano, M. Leroux
  International Workshop on Nitride semiconductors (IWN2008), Montreux (Suisse), 6-10 Octobre 2008
• Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE
  Y.Cordier, F.Pruvost, F.Semond, J.Massies, M.Leroux, P.Lorenzini, C.Chaix
  14th International Conference on Molecular Beam Epitaxy, Tokyo, September 2006
• Optical quality and uniformity assessment of AlGaN/GaN Quantum Wells grown by Ammonia MBE
  Y.Cordier, F.Pruvost, F.Semond, J.Massies, M.Leroux, C.Chaix
  13th European Molecular Beam Epitaxy Workshop, Grindelwald, Switzerland, March 2005
• Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by Ammonia MBE
  Y.Cordier, F.Pruvost, F.Semond, J.Massies, M.Leroux, P.Lorenzini, C.Chaix
  6th International Conference on Nitride Semiconductors (ICNS 6), Bremen, August-September 2005

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