Publications

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Publications

 

2017

• Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing
  M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault
  J. Cryst. Growth 461, 10 (2017)

 

2016

• Shape and coarsening dynamics of strained islands
  G. Schifani, T. Frisch, M. Argentina, J.-N. Aqua
  Phys. Rev E 94, 042808 (2016)
• High temperature electrical transport study of Si-doped AlN
  S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault.
  Superlattices and Microstructures 98, 253 (2016).
• Investigation of AlyGa1-yN / Al0.5Ga0.5N QD Properties for the Design of UV Emitters
  J. Brault, S. Matta, T.-H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil.
  Japanese Jour. of Appl. Phys. 55, 05FG06 (2016).
• Ultraviolet light emitting diodes using III-N quantum dots
  Julien Brault, Samuel Matta, Thi-Huong Ngo, Daniel Rosales, Mathieu Leroux, Benjamin Damilano, Mohamed Al Khalfioui, Florian Tendille, Sébastien Chenot, Philippe De Mierry, Jean Massies, Bernard Gil.
  Materials Science in Semiconductor Processing, March 2016.

2015

• Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source
  B. Damilano, J. Brault and J. Massies.
  J. Appl. Phys. 118, 024304 (2015)
• Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
  Julien Sellés; Daniel Rosales; Bernard Gil; Guillaume Cassabois; Thierry Guillet; Julien Brault; Benjamin Damilano; Philippe Vennéguès; Philippe de Mierry; Jean Massies.
  Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630Z (13 March 2015); doi: 10.1117/12.2076284

2014

• Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0. 5N quantum dots: strong effect of capping layer and atmospheric condition 
  J.-H. Kim, D. Elmaghraoui, M. Leroux, M. Korytov, P. Vennéguès, S. Jaziri, J. Brault, Y.-H. Cho.
  Nanotechnology 25, 305703 (2014)
• Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots 
  D. Elmaghraoui, M. Triki, S. Jaziri, M. Leroux, J. Brault.
  Phys. 116, 014301 (2014)
• Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11-22) ones
  M. Leroux, J. Brault, A. Kahouli, D. Elmaghraoui, B. Damilano, P. de Mierry, M. Korytov, J.-H. Kim, Y.-H. Cho.
  J. Appl. Phys. 116, 034308 (2014)
• High radiative efficiency GaN nanostructures for UV emission
  J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot,P. Vennéguès, B. Vinter, P. de Mierry, A. Kahouli, J. Massies, T. Bretagnon, B. Gil.
  (June 2014)
• Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
  J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. de Mierry, A. Kahouli, J. Massies, T. Bretagnon, B. Gil.
  Semicond. Sci. Technol. 29 084001 (2014)

2013

• Growth and self-organization of SiGe nanostructures 
  J.-N. Aqua, I. Berbezier, L. Favre, T. Frisch, A. Ronda.
  Phys. Rev. B 88, 125437 (2013)
• Excitons in nitride heterostructures: From zero- to one-dimensional behavior
  D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M. V. Durnev, A. V. Kavokin.
  Phys. Rev. B 88, 125437 (2013)
• Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy 
  S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, B. Damilano.
  Appl. Phys. Lett. 103, 032102 (2013)
• AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission
  Julien Brault, Benjamin Damilano, Borge Vinter, Philippe Vennéguès, Mathieu Leroux, Abdelkarim Kahouli, Jean Massies.
  Jpn. J. Appl. Phys. 52, 08JG01 (2013)
• Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
  J. Brault, B.Damilano, A.Kahouli, S.Chenot, M.Leroux, B.Vinter, J.Massies.
  J. Cryst. Growth 363, 282 (2013)