Conférences

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Conférences

2016

• Fabrication and characterization of AlyGa1-yN based quantum dots for UV emission.
  S. Matta, J. Brault, T. H. Ngo, B. Damilano, A. Courville, M. Nemoz, M. Leroux, J. Massies, B. Gil.
  19th International Conference on Molecular-Beam Epitaxy, Montpellier, France, Sept. 4-9 2016.
• Ultra-Violet Light Emitting Diodes based on III-Nitride Quantum Dots
  J. Brault, S. Matta, T. H. Ngo, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, P. De Mierry, J. Massies, B. Gil.
  19th International Conference on Molecular-Beam Epitaxy, Montpellier, France, Sept. 4-9 2016.
• Designing III-Nitride Quantum Dots for Ultra-Violet Emission
  J.Brault, S. Matta, T. H. Ngo, B. Damilano, M. Leroux, J. Massies, B. Gil.
  33rd Int. Conf. on the Physics of Semiconductors, ICPS2016, Beijing, China, July 31 - Aug 5 2016.
• High temperature electrical transport study of Si-doped AlN
  S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J.Brault.
  33rd Int. Conf. on the Physics of Semiconductors, ICPS2016, Beijing, China, July 31 - Aug 5 2016.
• High Temperature Annealing of MBE grown Mg-doped GaN
  S.Contreras, L. Konczewicz, H. Peyre, S. Juillaguet, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J.Brault.
  33rd Int. Conf. on the Physics of Semiconductors, ICPS2016, Beijing, China, July 31 - Aug 5 2016.
• Epitaxial growth of (Al,Ga)N quantum dots for Ultra-Violet LEDs
  S. Matta, J. Brault, T.-H. Ngo, B. Damilano, A. Courville, M. Leroux, J. Massies, B. Gil.
  Int. workshop on UV materials and devices, Beijing, China, July 27-31 2016
• Boîtes Quantiques pour diodes électroluminescentes UV .
  S. Matta, J. Brault, M. Leroux, B. Damilano, A. Courville, P. Vennéguès, J. Massies.
  JNMO 2016, Saint-Aygulf (83), May 30 – June 01, 2016.
• Diodes électroluminescentes UV à boîtes quantiques GaN .
  J.Brault, S. Matta, M. Leroux, B. Damilano, M. Al Khalfioui, S. Chenot, F. Tendille, A. Courville, P. Vennéguès, P. De Mierry, J. Massies.
  JNMO 2016, Saint-Aygulf (83), May 30 – June 01, 2016.
• Chemical Vapor deposition of graphene on AlN templates on SiC and sapphire in propane-nitrogen atmosphere
  R. Dagher, S. Matta, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, J. Brault, Y. Cordier, and A. Michon.
  E-MRS 2016, Spring Meeting, Symposia L - Wide bandgap materials for electron devices, Lille, May 2 – 6, 2016.

Présentation invitée:

• UV Light Emitting Diodes using Self-Assembled (Al,Ga)N Quantum Dots
  J. Brault (oral invité), S. Matta, T. H. Ngo, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, J. Massies, B. Gil.
  Int. workshop on UV materials and devices, Beijing, China, July 27-31 2016.
• (Al,Ga)N based quantum dot heterostructures grown by molecular beam epitaxy for the fabrication of UV LEDs
  J. Brault, B. Damilano, A. Courville, M. Al Khalfioui, M. Leroux, S. Chenot, S. Matta, P. Vennéguès, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon and B. Gil.
  SPIE 2016, Gallium Nitride Materials and Devices XI, San Francisco, USA, February 15 – 18, 2016.

2015

• Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
  Julien Sellés; Daniel Rosales; Bernard Gil; Guillaume Cassabois; Thierry Guillet; Julien Brault; Benjamin Damilano; Philippe Vennéguès; Philippe de Mierry; Jean Massies.
  Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630Z (13 March 2015); doi: 10.1117/12.2076284
• Optical properties of small Al0.1Ga0.9N/Al0.5Ga0.5N polar quantum dots.
  D. Rosales , T.- H. Ngo , J. Brault , S. Matta , B. Damilano, M. Leroux , B. Gil.
  ISGN-6, International Symposium on theGrowth of III-Nitrides, Hamamatsu, Japan, Nov. 8-11 2015

Présentation invitée:

• III-Nitride Quantum Dot Based Light Emitting Diodes for UV emission.
  J. Brault, B. Damilano, A. Courville, M. Al Khalfioui, M. Leroux, S. Chenot, P. Vennéguès, P. DeMierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil.
  11th conference on Lasers and Electro-Optics Pacific Rim CLEO-PR 2015, Busan, Korea, August 24-28, 2015
• Self-assembled Nitride Quantum Dots for UV Light Emitting Diodes.
  J. Brault, B. Damilano, A. Courville, M. Al Khalfioui, M. Leroux, S. Chenot, P. Vennéguès, P. DeMierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil.
  ICNS-11, International Conference on Nitride Semiconductors, Beijing, China, Aug. 30-Sept. 04 2015
• Growth of AlyGa1-yN Quantum Dots by Molecular Beam Epitaxy for UV Light Emitting Diode Designs.
  J. Brault, S. Matta, B. Damilano, M. Leroux, M. Korytov, P. Vennéguès, M. Al Khalfioui, P. De Mierry, J. Massies, D. Rosales, T.-H. Ngo, B. Gil.
  ISGN-6, International Symposium on the Growth of III-Nitrides, Hamamatsu, Japan, Nov. 8-11 2015