Nom : Philippe De Mierry
Statut : Chercheur
Grade : CRHC
Équipe(s) : Opto
☎ : +33 4 93 95 7832
Activités
Publications (99)
⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode
Atse Julien Eric N'Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong-Viet Phung, Frederic Morancho, Hassan Maher, Dominique Planson
Crystals, 13, 713, (2023) - Papier régulier⋄ Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’Dohi, Heré Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Microelectronics J, 128, 105575, (2022) - Papier régulier⋄ A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
P. Quach, A. Jollivet, A. Babichev, N. Isac, M. Morassi, A. Lemaitre, P. A. Yunin, E. Frayssinet, P. de Mierry, M. Jeannin, A. Bousseksou, R. Colombelli, M. Tchernycheva, Y. Cordier, and F. H. Julien
Appl. Phys. Lett., 120, 171103, (2022) - Papier régulier⋄ Micro Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications
Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
AIP. Adv, 12, 025126, (2022) - Papier régulier⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck
Phys. Rev. Applied, 16, 054040, (2021) - Papier régulier⋄ Whispering-gallery mode InGaN microdisks on GaN substrates
H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29, 21280, (2021) - Papier régulier⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12, 3631, (2021) - Papier régulier⋄ Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography
L. Amichi, I. Mouton, V. Boureau , E. Di Russo, P. Vennéguès, P. De Mierry, A. Grenier, P.H. Jouneau, C. Bougerol and D. Cooper
Nanotechnology, 31, 045702, (2020) - Papier régulier⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11, 2651, (2020) - Papier régulier⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet
Nanophotonics, 10(1), 697, (2020) - Papier régulier⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping
Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet
Appl. Phys. Express., 13, 115504, (2020) - Papier régulier⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. Chow, P. Li, J. Kearns, A. A. Taylor, P. De Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars
Opt. Express, 27, 24154, (2019) - Papier régulier⋄ Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates
A. Jollivet, M. Tchernycheva, V. Trinité, E. Frayssinet, P. De Mierry, Y. Cordier and F.H. Julien
Appl. Phys. Lett., 115, 261103, (2019) - Papier régulier⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression
R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet
J. Appl. Phys., 125, 035703, (2019) - Papier régulier⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates
M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars
ACS Appl. Mater. Interfaces, 11, 50, 47106-47111, (2019) - Papier régulier⋄ Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers
P. Henning , P. Horenburg, H. Bremers, U. Rossow, F. Tendille, P. Vennégués , P. de Mierry, J. Zúñiga-Pérez , and A. Hangleiter
Appl. Phys. Lett., 115, 202103, (2019) - Papier régulier⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet
J. Cryst. Growth, 526, 125235, (2019) - Papier régulier⋄ Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates
A. Bengoechea-Encabo, S. Albert, M Müller, M–Y. Xie, P Veit, F. Bertram, M. A. Sanchez-Garcia, J. Zúñiga-Pérez, P. de Mierry, J. Christen
Nanotechnology, 28, 365704, (2017) - Papier régulier⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc., 268,3, 305-312, (2017) - Papier régulier⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red
T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil
Superlattices Microstruct., 113, 129-134, (2017) - Papier régulier⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures
T.H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry
J. Appl. Phys., 122, 063103, (2017) - Papier régulier⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire
M. Khoury, H. Li, L. Y. Kuritzky, A.J. Mughal, P. de Mierry, S. Nakamura, J.S. Speck, and S. P. DenBaars
Appl. Phys. Express., 10, 106501, (2017) - Papier régulier⋄ Internal quantum efficiency and Auger recombination in green\, yellow and red InGaN-based light emitters grown along the polar direction
T.H. Ngo, B. Gil, B. Damilano, K. Lekhal, P. de Mierry
Superlattices Microstruct., 103, 245, (2017) - Papier régulier⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates
H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. de Mierry, S. Nakamura, J. S. Speck, S. P. DenBaars
ACS Appl. Mater. Interfaces, 9, 36417, (2017) - Papier régulier⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality
F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109, 082101, (2016) - Papier régulier⋄ Ultraviolet light emitting diodes using III-N quantum dots
J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55, 95, (2016) - Papier invité⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth, 434, 25, (2016) - Papier régulier⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire
P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253, 105-111, (2016) - Papier régulier⋄ Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry
Jpn. J. Appl. Phys., 55, 05FG10, (2016) - Papier régulier⋄ Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates
A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, and M. Grundmann
AIP Adv, 6, 95013, (2016) - Papier régulier⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy
X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua
Phys. Stat. Sol. B, 253(11), 2225-2229, (2016) - Papier régulier⋄ GaN quantum dot polarity determination by X-ray photoelectron diffraction
O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka
Appl. Surf. Sci., 389, 1156, (2016) - Papier régulier⋄ Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire
P. Vennéguès, F. Tendille and P. De Mierry
J. Phys. D: Appl. Phys., 48, 325103, (2015) - Papier régulier⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate
F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry
Semicond. Sci. Tech., 30, 065001, (2015) - Papier régulier⋄ Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
T.H. Ngo, D. Rosales, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. de Mierry
Proc. SPIE, 9363, 93630K, (2015) - Article de conférence⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118, 024303, (2015) - Papier régulier⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363, 93630Z, (2015) - Article de conférence⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
Appl. Phys. Lett., 106, 142101, (2015) - Papier régulier⋄ Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal and P. De Mierry
Appl. Phys. Lett., 107, 122103, (2015) - Papier régulier⋄ Selective area growth of GaN nanostructures: A key to produce high-quality (11-20) a-plane pseudo-substrates
S. Albert, A. Bengoechea-Encabo, J. Zúñiga-Pérez, P. de Mierry, P. Val, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 105, 091902, (2014) - Papier régulier⋄ The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures
D. Rosales, T.H. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattice Microst, 76, 9-15, (2014) - Papier régulier⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter
B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G, 8986, (2014) - Article de conférence - invité⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29, 084001, (2014) - Papier invité⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties
S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano
Semicond. Sci. Tech., 29, 035016, (2014) - Papier régulier⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers
Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4, 498-501, (2014) - Article de conférence⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986, 89860Z, (2014) - Article de conférence⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones
M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116, 034308, (2014) - Papier régulier⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth, 404, 177-183, (2014) - Papier régulier⋄ Selective area growth and charcaterization of GaN nanocolumns, with and without an InGaN insertion, on semipolar (11-22) GaN templates
A. Bengoechea-Encabo, S. Albert, J. Zúñiga-Pérez, P. de Mierry, A. Trampert, F. Barbagini, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 103, 241905, (2013) - Papier régulier⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter
B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6, 092105, (2013) - Papier régulier⋄ Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M.P. Chauvat, P. Ruterana, G. Nataf, P. De Mierry, E. Monroy, and F.H. Julien
J. Appl. Phys., 113, 143109, (2013) - Papier régulier⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure
B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz
Phys. Stat. Sol. C, 9, 931, (2012) - Article de conférence⋄ Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
A. Bengoechea-Encabo, S. Albert, M. A. Sanchez-Garcia, L.L. Lopez, S. Estradé, J.M. Rebled, E. Peiro, G. Nataf, P. de Mierry, J. Zúñiga-Pérez, and E. Calleja
J. Cryst. Growth, 353, 1-4, (2012) - Papier régulier⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338, 20, (2012) - Papier régulier⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range
A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110, 084318, (2011) - Papier régulier⋄ The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates
H. Kim-Chauveau, P. de Mierry, J.M. Chauveau and J.Y. Duboz
J. Cryst. Growth, 316, 30, (2011) - Papier régulier⋄ Efficient blocking of planar defects by prismatic stacking faults in semipolar (1122)-GaN layers on m-sapphire by epitaxial lateral overgrowth
B. Lacroix, M.-P. Chauvat, P. Ruterana, G. Nataf, P. de Mierry
Appl. Phys. Lett., 98, 121916, (2011) - Papier régulier⋄ Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes
R. Charash, H. Kim-Chauveau, A. Vajpeyi, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, J.Y. Duboz, and B. Corbett
Phys. Stat. Sol. C, 8, 2378, (2011) - Article de conférence⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching
P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf
Appl. Phys. Lett., 96, 231918, (2010) - Papier régulier⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth
N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett., 5, 1878, (2010) - Article de conférence⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy
N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry
J. Cryst. Growth, 312, 2625, (2010) - Papier régulier⋄ Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding
R. Charash, H. Kim-Chauveau, J.M. Lamy, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J.Y. Duboz, A. Hangleiter and B. Corbett
Appl. Phys. Lett., 98, 201112, (2010) - Papier régulier⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy
P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf
Appl. Phys. Lett., 94, 191903, (2009) - Papier régulier⋄ Substrates for III−Nitride−based Electroluminescent Diodes
P. de Mierry
LEDs for Lighting Applications, Patrick Mottier (CEA, LETI), Editors ISTE Ltd (UK), 29-73, (2009) - Livres et chapitres de livres⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates
P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf
Jpn. J. Appl. Phys., 48, 031002, (2009) - Papier régulier⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy
M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mat. Sci. Eng. B, 165, 42, (2009) - Papier régulier⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90, 101117, (2008) - Papier régulier⋄ In-plane anisotropy characteristics of GaN epilayers grown on A-face sapphire substrates
HJ. Kim-Chauveau, P. De Mierry, H. Cabane, and D. Gindhart
J. Appl. Phys., 104, 113516, (2008) - Papier régulier⋄ Les substrats pour les diodes électroluminescentes de type III−nitrures
P. de Mierry
Les diodes electroluminescentes pour l eclairage, P. Mottier, Hermès, ISBN 978-2-7462-2097-3, 49−90, (2008) - Livres et chapitres de livres⋄ Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy
H.P.D. Schenk, P. Demolon, S. Ndiaye, M. Laügt, T. Gühne, Z. Bougrioua, P. de Mierry, J.Y. Duboz, A.D. Dräger, C. Netzel, and A. Hangleiter
Proc. Int. Workshop Nitride Based Nanostruct., , 127, (2007) - Article de conférence⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties
M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c), 4, No. 1, 137-140, (2007) - Article de conférence⋄ Deuterium Out-diffusion Kinetics in Magnesium-doped GaN
J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage
Mat. Res. Soc. Symp. Proc., 994, F03-22, (2007) - Article de conférence⋄ Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates
F. Tinjod, P. de Mierry, D. Lancefield, S. Chenot, E. Virey, J.L. Stone-Sundberg, M.R. Kokta, D. Pauwels
Phys. Stat. Sol. (c), (6), 2199-202, (2006) - Article de conférence⋄ Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study
B. Boudjelida, I. Gee, J. Evans-Freeman, S.A. Clark, M. Azize, J.M. Bethoux, and P. de Mierry
Phys. Stat. Sol. C, 3, 1823, (2006) - Article de conférence⋄ AlGaInN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques
G. Blume, T.J.C. Hosea, S.J. Sweeney, P. de Mierry, D. Lancefield
IEEE Proceedings Optoelectronics., 152(2), 118-24, (2005) - Article de conférence⋄ Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laugt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels
J. Cryst. Growth, 285(4), 450-8, (2005) - Papier régulier⋄ Origin of power fluctuations in GaN resonant-cavity light-emitting diodes
B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, M.A. Poisson
Optics Express, 12, 736, (2004) - Papier régulier⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties
M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257, 259-262, (2004) - Article de conférence⋄ Plastic relaxation through buried cracks in AlGaN/GaN heterostructures
J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry
Eur. Phys. J. Appl. Phys., 257, 263-265, (2004) - Papier régulier⋄ Atomic structure of pyramidal defects in Mg-doped GaN
P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68, 235214, (2003) - Papier régulier⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94, 6499, (2003) - Papier régulier⋄ Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart
Appl. Phys. Lett., 75, 2587, (2002) - Papier régulier⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN
P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93, 224, (2002) - Article de conférence⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN
M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192, 394, (2002) - Article de conférence⋄ Growth of gallium nitride epitaxial layers by metal organics vapour phase epitaxy and applications
B. Beaumont, F. Omnès, P. De Mierry, P. Gibart
Vide Science, Technique et Applications, 3-4, 553, (2002) - …⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy
H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett., 80, 174, (2002) - Papier régulier⋄ Vertical cavity InGaN LEDs grown by MOVPE
P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a), 192, 335, (2002) - Article de conférence⋄ 200 Mbit/s Data Transmission through 100 Meters of Plastic Optical Fibre with Nitride LEDs
M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont, and K. Panzer
Electron. Lett., 38, 1457, (2002) - Papier régulier⋄ Deuterium diffusion in Mg-doped GaN layers grown by MOVPE
P. Theys, Z. Teukam, F. Jomard, P. De Mierry, A.Y. Polyakov, M. Barbe
Semicond. Sci. Tech., 16, L53, (2001) - Papier régulier⋄ Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy
E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart
Jpn. J. Appl. Phys, 40, L738, (2001) - …⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE
H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle
Phys. Stat. Sol. (a), 188, 899, (2001) - Article de conférence⋄ Crack-free thick GaN layers on silicon(111) by MOVPE
E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart
Phys. Stat. Sol. (a), 188, 531, (2001) - Article de conférence⋄ Stress control in GaN grown on silicon(111) by MOPVE
E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart
Appl. Phys. Lett., 79, 3220, (2001) - Papier régulier⋄ Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart
Mat. Sci. Eng. B, 82, 163, (2001) - Article de conférence⋄ High temperature nitride sources for plastic optical fibre data buses
B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi
Proc. Tenth Int’l Plastic Optic Fibres Conf., 10, 81-87, (2001) - Article de conférence⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN
P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett., 77, 880, (2000) - Papier régulier⋄ Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN
P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra
MRS Internet J. Nitride Semicond. Res., 5, 8, (2000) - Papier régulier⋄ Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation
H.P.D. Schenk, M. Leroux, and P. De Mierry
J. Appl. Phys., 88, 1525, (2000) - Papier régulier⋄ Green electroluminescent (Ga,InAl)N LEDs grown on Si(111)
S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux
Electron. Lett., 36(20), 1728, (2000) - Papier régulier
Contrats en cours
Contrats terminés
Encadrements en cours
Encadrements terminés
Florian Tendille (Doctorant) (2015)
Post-doc
Thèse
Cursus
