
Nom : Emmanuel Beraudo
Statut : Ingénieur
Grade : IEHC
Équipe(s) : Nano (50%) Hygiène et sécurité Atelier
☎ : +33 4 93 95 4221
Fonctions
Responsable technique batis MOCVD / Responsable mécanique (conception - atelier) / Gestion de projet / Assistant de Prévention
Mots- clés
Publications (8)
⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers
M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28, 035006, (2013) - Papier régulier⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes
P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express, 20, 18707, (2012) - Papier régulier⋄ Fabrication and growth of GaN-based micro and nanostructures
B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9, 412-427, (2012) - Papier invité⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett., 98, 011914, (2011) - Papier régulier⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates
P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf
Jpn. J. Appl. Phys., 48, 031002, (2009) - Papier régulier⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode
T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf
Electron. Lett., 44, 231, (2008) - Papier régulier⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties
M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c), 4, No. 1, 137-140, (2007) - Article de conférence⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)
S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth, 280, 44-53, (2005) - Papier régulier