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21 publications classées par date - Critères de recherche: Korytov

⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3, 4054, (2020) - Papier régulier
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⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126, 205701, (2019) - Papier régulier
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⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499, 40, (2018) - Papier régulier
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⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33, 075007, (2018) - Papier régulier
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⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122, 085706, (2017) - Papier régulier
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⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55, 05FG06, (2016) - Papier régulier
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⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29, 084001, (2014) - Papier invité
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⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones

M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116, 034308, (2014) - Papier régulier

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398, 23, (2014) - Papier régulier

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986, 89860Z, (2014) - Article de conférence
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⋄ Quantitative determination of compositional profiles using HAADF image simulations

R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa
Phys. Stat. Sol. C, 11, 284, (2014) - Papier régulier

⋄ Plasmon energy from strained GaN quantum wells

M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken
Appl. Phys. Lett., 103, 021901, (2013) - Papier régulier

⋄ Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strainevolution and phase separation

M. Korytov, J.A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.L. Rouvière, and P. Vennégués
J. Appl. Phys., 111, 084309, (2012) - Papier régulier

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109, 053514, (2011) - Papier régulier

⋄ Phase separation in GaN/AlGaN quantum dots

M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès
Appl. Phys. Lett., 95, 141901, (2009) - Papier régulier

⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès
Appl. Phys. Lett., 94, 143105, (2009) - Papier régulier

⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105, 033519, (2009) - Papier régulier

⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c), S2, 897, (2009) - Article de conférence

⋄ Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

P. Vennéguès, J.M. Chauveau, M. Korytov, C. deparis, J. Zúñiga-Pérez, and C. Morhain
J. Appl. Phys., 103, 083525, (2008) - Papier régulier

⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors

R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors, , , (2008) - Article de conférence

⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter
Appl. Phys. Lett., 93, 081116, (2008) - Papier régulier