Bandeau OptoTeraGaN



The consortium, which regroups two academic and one industrial laboratories, has been assembled to gather the broad range of expertise required for the success of the project. One key point is the quality of the material for the envisioned complex device structures. The consortium regroups experts on high quality nitride growth and technology using the two-most advanced techniques, namely ammonia-MBE and MOVPE at CRHEA. UPSud/IEF brings its expertise on nitride intersubband devices, on THz QCLs and on device processing. III-V Lab provides its expertise on transport modeling of quantum cascade devices, grating design and QCD processing and characterization.

The three partners have a long track record of collaboration on ISB devices: CRHEA and UPSud/IEF have collaborated on the investigation of ISB transitions in GaN polar quantum dots and semi-polar QWs (ANR Blanc COSNI) as well as on GaN/AlGaN resonant tunneling devices (ANR Blanc TRANSNIT 2006-2009). III-V Lab and UPSud/IEF have collaborated on plasmonic QCL investigation in various III-V semiconductors (ANR P2N Metalguide and GOSPEL). In case of success, the present project OptoTeraGaN will trigger new opportunities for further support by the Labex GaNex and possible developments with other partners of the network


Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
Rue Bernard Gregory
Sophia Antipolis
F-06560 Valbonne, FRANCE
Tél. +33(0)4 9395 4200 - Fax +33(0)4 9395 8361
Direction du Laboratoire : Jean Yves Duboz
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For more than 16 years, CRHEA has been involved in the study of III-nitrides semiconductors. At present, three MOVPE and 4 MBE sets are dedicated to these materials. Their present expertise covers the hetero-epitaxy of nitrides on Silicon (111), (110) and (100) orientations, on sapphire with different crystallographic orientations, including non-polar and semi-polar GaN and the realization of electron devices and light-emitting devices on these templates as well as on Si.
CRHEA will provide its expertise in MOVPE and NH3-MBE growth of III-nitride materials with one NH3-MBE reactor and two MOVPE reactors used in this project. The main investigators will be P. de Mierry, M. Hugues, E. Frayssinet and Y. Cordier (coordinator).

Institut d'Electronique Fondamentale
Bât 220, rue André Ampère - Université Paris-Sud
Centre scientifique d'Orsay F-91405 O9rsau cedex, France
Tél. : +33 (0)1 69 15 65 10 - Fax : +33 (0)1 69 15 40 50
Direction du Laboratoire : André De Lustrac
Logo Institut d'Electronique Fondamentale

The “Institut d’Electronique Fondamentale” is a joint research unit of CNRS and University of Paris-Sud (UMR 8622). Within the Photonic Department led by F. Julien, the Nanophotonit team has pioneered the research on III-nitride intersubband devices in 2002 and is now recognized as a world-class expert in this field with over 95 peer-reviewed dedicated publications, 46 invited and plenary talks, 105 presentations to international conferences/workshops and 2 patents.
Complete device processing will be realized on site using the state-of-the-art nano-fabrication clean-room facility of CTU-IEF-Minerve, which is one of the seven major clean-room facilities within the RENATECH network. The main investigators will be F. Julien, M. Tchernycheva, A. Bousseksou, E. Warde and N. Isac.

III-5 Lab
Campus de Polytechnique
1 Avenus Augustin Fresnel
F-91767 Palaiseau cedex, FRANCE
Tél. +33 (0)1 69 41 55 00
Fax +33 (0)1 69 41 57 38
Logo III-V Lab

III-V Lab is an industrial Research Laboratory, initially created in 2004 by Alcatel-Lucent and Thales. Alcatel-Lucent is one of the leaders in communication technologies (mobile, fixed, IP and optics technologies), applications and services, while Thales is a major electronic systems company acting in areas such as defense, aerospace, airlines security and safety, information technology, and transportation.
III-V Lab conducts R& D activities in the field of micro/nano-electronics and photonics semiconductor components, its facilities include 4,000 m² of clean rooms, advanced material synthesis (MOVPE, MBE), advanced material processing (RIE, ICP, CAIBE, IBE), measuring and modelling facilities. The main investigators will be V. Trinité, J.-L. Reverchon and P. Bois.

Agence Nationale de la Recherche
50, avenue Daumesnil
75012 PARIS
Tél:01 78 09 80 00
Président Directeur Général : Michael Matlosz
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ANR provides funding for project-based research in all fields of science - for both basic and applied research - to public research organisations and universities, as well as to private companies (including SMEs). Employing a method based on competitive peer reviews compliant with international standards, ANR provides the scientific community with instruments and programmes promoting creativity and openness, and stimulate new ideas and partnerships, particularly between academia and industry. Its activity also contributes to enhancing the competitiveness and the influence of French research in Europe and across the world. Since 2010, ANR has also been the lead manager of the Investments for the Future programme in the field of higher education and research, in charge of project selection, funding and monitoring.

A public body under the authority of the Ministry of research, ANR was created in two phases:

The Decree of March 24, 2014 sets out the agency’s missions and introduces a new governance model. ANR's activities aim at:

The main challenges the ANR works on are part of the European Strategic Agenda. ANR has designed and deployed a range of funding instruments to satisfy both the project-based funding needs of the research communities and the public policy for research and innovation in France.