⋄ GaN/AlN bilayers for integrated photonics
Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Xavier Checoury, Benjamin Damilano, AND Philippe Boucaud
Opt. Mater. Express, 14,
792, (2024)
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⋄ Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates
M. Takiguchi, S. Sergent, B. Damilano, S. Vézian, S. Chenot, N. Yazigi, P. Heidt, T. Tsuchizawa, T. Yoda, H. Sumikura, A. Shinya, and M. Notomi,
ACS Photonics, 11,
789, (2024)
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⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
J. Appl. Phys., 135,
095702, (2024)
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⋄ Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions
M. GROMOVYI, N. BHAT, H. TRONCHE, P. BALDI, M. EL KURDI, X. CHECOURY, B. DAMILANO, AND P. BOUCAUD
Opt. Express, 31,
31397, (2023)
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⋄ Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films
R. Aristegui, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, I. Paradisanos, C. Robert, X. Marie, B. Urbaszek, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 108,
125421, (2023)
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⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson,
F. Semond, G. Feuillet, and C. Cornet
J. Appl. Phys., 132,
165102, (2022)
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⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593,
126779, (2022)
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⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells
R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 106,
035429, (2022)
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⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil,
J. Appl. Phys., 132,
035302, (2022)
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⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55,
355107, (2022)
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⋄ Porous Nitride LEDs
Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva
ACS Photonics, 9,
1256, (2022)
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⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks
Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47,
1521, (2022)
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⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188,
108210, (2022)
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⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy
B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva
Nanotechnology, 34,
245602, (2022)
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⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes
Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano,
Phys. Stat. Sol. A, 219,
2200055, (2022)
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⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi,
J. Phys. D: Appl. Phys., 55,
355107, (2022)
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⋄ Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization
D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, et al.
J. Appl. Phys., 130 (2),
025704, (2021)
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⋄ Whispering-gallery mode InGaN microdisks on GaN substrates
H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29,
21280, (2021)
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⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12,
3631, (2021)
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⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires
K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0,
0, (2021)
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⋄ DUV LEDs based on AlGaN Quantum Dots
Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686,
116860T, (2021)
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⋄ Bandwidth-unlimited polarization-maintaining metasurfaces
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet
Sci. Adv., 7(5),
eabe1112, (2021)
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⋄ Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
Phys. Rev. B, 103,
045308, (2021)
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⋄ Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
P. Ruterana, M. Morales, N. Chery, T.H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano, and B. Gil
J. Appl. Phys., 128,
223102, (2020)
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⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36,
024001, (2020)
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⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate
B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover
Sci Rep., 10,
18919, (2020)
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⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters
T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie,
N. Nahas, Y. Cordier
J. Cryst. Growth, 552,
125911, (2020)
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⋄ Full InGaN red light emitting diodes
A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A.M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J.C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta
J. Appl. Phys., 128,
135704, (2020)
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⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers
F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117,
121103, (2020)
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⋄ Revealing topological phase in Pancharatnam–Berry metasurfaces using mesoscopic electrodynamics
Z Gao, S. Golla, R. Sawant, V. Osipov, G. Briere, S. Vezian, B. Damilano, P. Genevet and K. E. Dorfman
Nanophotonics, 9(16),
4711, (2020)
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⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45,
4276, (2020)
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⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials
L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras
J. Appl. Phys., 128,
085703, (2020)
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⋄ InGaN islands and thin films grown on epitaxial graphene
C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot
Nanotechnology, 31,
405601, (2020)
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⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet
Nanophotonics, 10(1),
697, (2020)
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⋄ Lasing up to 380 K in a sublimated GaN nanowire
S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi
Appl. Phys. Lett., 116,
223101, (2020)
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⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11,
2651, (2020)
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⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters
G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3,
4054, (2020)
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⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper
Nanotechnology, 31,
465706, (2020)
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⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10,
5642, (2020)
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⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5,
52, (2019)
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⋄ Metasurface orbital angular momentum holography
H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet
Nat. Commun, 10,
2986, (2019)
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⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz
J. Appl. Phys., 126,
224503, (2019)
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⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9,
18095, (2019)
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⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet
J. Cryst. Growth, 526,
125235, (2019)
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⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126,
205701, (2019)
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⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics
S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi
ACS Photonics, 6,12,
3321-3330, (2019)
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⋄ Metasurfaces Orbital Angular Momentum Holography
H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet
Nat. Commun, 10,
2986, (2019)
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⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures
F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova
Nano Lett., 19,
4911, (2019)
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⋄ (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition
V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, and J.-Y. Duboz
AIP. Adv, 9,
055101, (2019)
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⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits
F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27,
11800, (2019)
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⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces
G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14),
1801271, (2019)
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⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,
045007, (2019)
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⋄ Enhanced excitonic emission efficiency in porous GaN
T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies
Sci Rep., 8,
15767, (2018)
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⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel
IEEE Photonic Tech L, 30,
1567, (2018)
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⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5,
3643, (2018)
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⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range
J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33,
075007, (2018)
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⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)
S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil
Superlattices Microstruct., 114,
161, (2018)
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⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate
T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5),
1700399, (2018)
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⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate
B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 255(5),
1700392, (2017)
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⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation
B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25,
33243, (2017)
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⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate
R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 215(9),
1700642, (2017)
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⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer
E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 214,
1600419, (2017)
- Article de conférence
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⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc., 268,3,
305-312, (2017)
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⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red
T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil
Superlattices Microstruct., 113,
129-134, (2017)
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⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission
S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122,
085706, (2017)
- Papier régulier
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⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures
T.H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry
J. Appl. Phys., 122,
063103, (2017)
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⋄ Internal quantum efficiency and Auger recombination in green\, yellow and red InGaN-based light emitters grown along the polar direction
T.H. Ngo, B. Gil, B. Damilano, K. Lekhal, P. de Mierry
Superlattices Microstruct., 103,
245, (2017)
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⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films
J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2,
165, (2017)
- Article de conférence
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⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy
F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances, 2,
189, (2017)
- Article de conférence
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⋄ Recent improvements of flexible GaN-based HEMT technology
S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, Y. Cordier, B. Damilano, G. Tabares Jimenez, A. Ebongue, and V. Hoel
Phys. Stat. Sol. A, 214(4),
1600484, (2017)
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⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation
B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies
J. Cryst. Growth, 477,
262, (2017)
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⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet
J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis,
M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont,
and T. Guillet
Appl. Phys. Lett., 109,
231101, (2016)
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⋄ Ultraviolet light emitting diodes using III-N quantum dots
J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55,
95, (2016)
- Papier invité
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⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN
J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16,
6454, (2016)
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⋄ High temperature electrical transport study of Si-doped AlN
S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux,
B. Damilano, J. Brault
Superlattices Microstruct., 98,
253, (2016)
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⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450,
22, (2016)
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⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes
G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L, 28,
1661, (2016)
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⋄ First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor
S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel
IEEE Electron Device Letters, 37,
553, (2016)
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⋄ Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry
Jpn. J. Appl. Phys., 55,
05FG10, (2016)
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⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55,
05FG06, (2016)
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⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16,
1863, (2016)
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⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth, 434,
25, (2016)
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⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433,
165-171, (2016)
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⋄ Yellow–red emission from (Ga,In)N heterostructures
B. Damilano and B. Gil
J. Phys. D: Appl. Phys., 48,
403001, (2015)
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⋄ Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal and P. De Mierry
Appl. Phys. Lett., 107,
122103, (2015)
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⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118,
024303, (2015)
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⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate
B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212,
2297–2301, (2015)
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⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source
B. Damilano, J. Brault and J. Massies
J. Appl. Phys., 118,
024304, (2015)
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⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
Appl. Phys. Lett., 106,
142101, (2015)
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⋄ Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
T.H. Ngo, D. Rosales, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. de Mierry
Proc. SPIE, 9363,
93630K, (2015)
- Article de conférence
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⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363,
93630Z, (2015)
- Article de conférence
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⋄ Highly resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106,
022401, (2015)
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⋄ The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures
D. Rosales, T.H. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattice Microst, 76,
9-15, (2014)
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⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29,
084001, (2014)
- Papier invité
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⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones
M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116,
034308, (2014)
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⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter
B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G,
8986, (2014)
- Article de conférence - invité
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⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties
S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano
Semicond. Sci. Tech., 29,
035016, (2014)
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⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986,
89860Z, (2014)
- Article de conférence
Article en ligne (HAL) : cliquez ici...
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⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films
F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404,
146-151, (2014)
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⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates
J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter
Appl. Phys. Lett., 103,
262104, (2013)
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⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior
D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B, 88,
125437, (2013)
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⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter
B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6,
092105, (2013)
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⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano.
Appl. Phys. Lett., 103,
032102, (2013)
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⋄ GaN doped with beryllium—An effective light converter for white light emitting diodes
H. Teisseyre, M. Bockowski, I. Grzegory, A. Kozanecki, B. Damilano, Y. Zhydachevskii, M. Kunzer, K. Holc, and U.T. Schwarz
Appl. Phys. Lett., 103,
011107, (2013)
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⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission
J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52,
08JG01, (2013)
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⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates
Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau
Appl. Phys. Express, 6,
042101, (2013)
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⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy
S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A, 210,
480-483, (2013)
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⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers
M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau
and P Vennéguès
Semicond. Sci. Tech., 28,
035006, (2013)
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⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth, 363,
282, (2013)
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⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy
N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies
J. Appl. Phys., 114,
053505, (2013)
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⋄ Role of magnetic polarons in ferromagnetic GdN
F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87,
035202, (2013)
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⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate
T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10,
425, (2012)
- Article de conférence
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⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots
J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566,
73, (2012)
- Article de conférence
|
⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure
B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz
Phys. Stat. Sol. C, 9,
931, (2012)
- Article de conférence
|
⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)
D.H. Rich, O. Moshe, B. Damilano, and J. Massies
Phys. Stat. Sol. C, 9,
1011, (2012)
- Article de conférence
|
⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338,
20, (2012)
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⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A, 209,
465, (2012)
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⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses
D. H. Rich, O. Moshe, B. Damilano and J. Massies
AIP. Proceedings, 1399,
453, (2011)
- Article de conférence
|
⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D. H. Rich, B. Damilano, and J. Massies
J. Phys. Cond. Mat., 44,
505101, (2011)
- Papier régulier
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⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range
A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110,
084318, (2011)
- Papier régulier
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⋄ Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D.H. Rich, B. Damilano, and J. Massies
Appl. Phys. Lett., 98,
061903, (2011)
- Papier régulier
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⋄ Blue-green and white color tuning of monolithic light emitting diodes
B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108,
073115, (2010)
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⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies
J. Appl. Phys., 108,
083510, (2010)
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⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19,
2683-2688 , (2010)
- Papier régulier
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⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues,
B. Damilano, and J. Massies
J. Appl. Phys., 108,
033104, (2010)
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⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses
O. Moshe, D.H. Rich, B. Damilano and J. Massies
J. Vac. Sci.Technol.B, 28,
C5E25, (2010)
- Papier régulier
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⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes
M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron, 46,
1058, (2010)
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⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission
Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3,
200983426, (2010)
- Article de conférence
|
⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C, 6,
1424, (2009)
- Article de conférence
|
⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors
Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
Phys. Stat. Sol. C, 6,
1432, (2009)
- Article de conférence
|
⋄ Infrared detectors based on InGaAsN/GaAs intersubband transitions
J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien
Appl. Phys. Lett., 94,
022103, (2009)
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⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79,
035328, (2009)
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⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2,
1020-1023, (2009)
- Article de conférence
|
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246,
845-845, (2009)
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⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105,
033519, (2009)
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⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90,
101117, (2008)
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⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys, 41,
155102, (2008)
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⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29,
1187-1189, (2008)
- Papier régulier
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⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech., 23,
035020, (2008)
- Papier régulier
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⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92,
051911, (2008)
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⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1,
121101, (2008)
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⋄ High doping level in Mg-doped GaN layers grown at low temperature
A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103,
013110, (2008)
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⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations
T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz
J. Appl. Phys., 101,
073510, (2007)
- Papier régulier
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⋄ Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, and B. Damilano
Phys. Rev. B, 75,
075306, (2007)
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⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells
M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies
Phys. Rev. B, 75,
045313, (2007)
- Papier régulier
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⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46,
12-16, (2007)
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⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots
M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies
Phys. Rev. B, 76 (7),
075335-6, (2007)
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⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M.
M. Hugues, B. Damilano, J.Y. Duboz, J. Massies
Phys. Rev. B, 75,
115337, (2007)
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⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots
R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1,
183-186, (2007)
- Article de conférence
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⋄ Monolithic white light emitting diodes with a broad emission spectrum
A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1,
57-60, (2007)
- Article de conférence
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⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate
M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c), 3,
3848, (2006)
- Article de conférence
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⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm
M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c), 3,
3979, (2006)
- Article de conférence
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⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate
M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck
Appl. Phys. Lett., 88,
231902, (2006)
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⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots
T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11),
113304-1-4, (2006)
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⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications
M. Richter, B. Damilano, J. Massies, and J.Y. Duboz
Mater. Res. Soc. Symp. Proc., 891,
0891-EE03-29.1, (2006)
- Article de conférence
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⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm
M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies
Appl. Phys. Lett., 88,
91111, (2006)
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⋄ Diodes électroluminescentes blanches pour l'éclairage
B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique, ,
86, (2006)
- Livres et chapitres de livres
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⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm
J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies
Appl. Phys. Lett., 87,
251109, (2005)
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⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert
Proc. SPIE Int. Soc. Opt. Eng., 5840,
81, (2005)
- Article de conférence
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⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71,
75311, (2005)
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⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE
A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies
Proc. SPIE Int. Soc. Opt. Eng., 5840,
72, (2005)
- Article de conférence
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⋄ Light-ion beam analysis for microelectronic applications
L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon
Nucl Inst and MethodB, 240,
265, (2005)
- Article de conférence
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⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja
Appl. Phys. Lett., 86,
071105, (2005)
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⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers
B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro
Proc. SPIE Int. Soc. Opt. Eng., 5840,
781, (2005)
- Article de conférence
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⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy
A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies
IEEE Photon. Techno. Letters, 17, Issue: 6,
1142-1144, (2005)
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⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well
M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro
Electron. Lett., 41 No.10,
595, (2005)
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⋄ Surface morphology of AlN and size dispersion of GaN quantum dots
A. Matsuse, N. Grandjean, B. Damilano Et J. Massies
J. Cryst. Growth, 274,
387, (2005)
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⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing
M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC, 151(5),
433-436, (2005)
- Article de conférence
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⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36,
659, (2004)
- Article de conférence
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⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12,
2779-2782, (2004)
- Article de conférence
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⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy
B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies
IEE Proc.-Optoelectron., 151, No. 5,
433-436, (2004)
- Article de conférence
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⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties
M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257,
259-262, (2004)
- Article de conférence
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⋄ Spectroscopy of the electron states in self-organized GaN/AlN quantum dots
A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean
Phys. Stat. Sol. (c), 1, Issue 6,
1456-1460, (2004)
- Article de conférence
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⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96,
180, (2004)
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⋄ Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean
J. Cryst. Growth, 262, Issues 1-4,
145-150, (2004)
- Article de conférence
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⋄ Optical and structural characterization of self-organized stacked GaN/AlN quantum dots
G. Salviati, F. Rossi, N. Armani, V. Grillo, O. Martinez, A. Vinattieri, B. Damilano, A. Matsuse, N. Grandjean
J. Phys.: Condens. Matter, 16(2),
S115-26, (2004)
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⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector
D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys, 42, Part 2, No. 12B,
L1509, (2003)
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⋄ Atomic structure of pyramidal defects in Mg-doped GaN
P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68,
235214, (2003)
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⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68,
205301, (2003)
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⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), 0(7),
2666-2669, (2003)
- Article de conférence
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⋄ Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers
S. Kret, G. Maciejewski, P. Dluzewski, P. Ruterana, N. Grandjean, and B. Damilano
Materials Chemistry and Physics, 81,
273, (2003)
- Article de conférence
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⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4,
811-815, (2003)
- Article de conférence
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⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots
A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang
Physica E, 17,
60, (2003)
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⋄ In surface segregation in InGaN/GaN quantum wells
A. Dussaigne, B. Damilano, N. Grandjean, J. Massies
J. Cryst. Growth, 251,
471, (2003)
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⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells
A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E, 17,
64, (2003)
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⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm
K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies
Appl. Phys. Lett., 82,
868, (2003)
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⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett., 82,
499, (2003)
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⋄ Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
J.L. Bubendorff, N. Grandjean, B. Damilano, M. Troyon
J. Cryst. Growth, 247,
284, (2003)
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⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots
A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin
Mater. Res. Soc. Symp. Proc., 7,
169, (2003)
- Article de conférence
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⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters
D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666,
178, (2003)
- Article de conférence
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⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon
J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42,
118, (2003)
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⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems
A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc., 743,
L5.5, (2003)
- Article de conférence
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⋄ Indium distribution inside quantum wells: The effect of growth interruption in MBE
A.M. Sanchez, P. Ruterana, S. Kret, P. Dluzewski, G. Maciejewski, N. Grandjean, B. Damilano
Mater. Res. Soc. Symp. Proc., 743,
L5.6, (2003)
- Article de conférence
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⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1,
61, (2002)
- Article de conférence
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⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92,
5602, (2002)
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⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN
M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192,
394, (2002)
- Article de conférence
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⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes
S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a), 192(1),
139-143, (2002)
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⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN
P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93,
224, (2002)
- Article de conférence
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⋄ In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies
Mat. Sci. Eng. B, 93,
150, (2002)
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⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector
L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91,
6095, (2002)
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⋄ Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,
135, (2002)
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⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a), 190,
149, (2002)
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⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,
155, (2002)
- Article de conférence
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⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett., 80,
428, (2002)
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⋄ On the effect of high Mg doping on the polarity of GaN
P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean
Institute of Physics Conferences Series, n°169,
307, (2002)
- Article de conférence
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⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect
P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b), 228,
65, (2001)
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⋄ Nuclear microprobe analysis of GaN bases light emitting diodes
L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz
Phys. Stat. Sol. (a), 188,
171, (2001)
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⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Phys. Rev. B, 64,
115319, (2001)
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⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties
B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth, 227/228,
466, (2001)
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⋄ Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 224,
53, (2001)
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⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,
1538, (2001)
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⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields
M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183,
61, (2001)
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⋄ Group-III nitride quantum heterostructures grown by molecular beam epitaxy
N. Grandjean, B. Damilano, J. Massies
J. Phys.: Condens. Matter, 13,
6945, (2001)
- Papier régulier
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⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible spectrum
B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82,
224, (2001)
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⋄ Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells
B. Damilano, N. Grandjean, C. Pernot, J. Massies
Jpn. J. Appl. Phys, 40,
L918, (2001)
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⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B, 82,
256, (2001)
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⋄ Photoconductance measurements and Stokes shift in InGaN alloys
J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82,
197, (2001)
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⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy
P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,
1252, (2001)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
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⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy, 202,
212, (2001)
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⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,
325, (2001)
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⋄ Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes
M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 228,
129, (2001)
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⋄ Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy
L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183,
139, (2001)
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⋄ Direct signature of strained GaN quantum dots by Raman scattering
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 79,
686, (2001)
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⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate
N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
J. Appl. Phys., 88,
183, (2000)
- Papier régulier
Article en ligne (HAL) : cliquez ici...
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⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures
P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Mater. Res. Soc. Symp. Proc., 639,
G9.8, (2000)
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⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range
B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science, 164,
241, (2000)
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⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180,
363, (2000)
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⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K
B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie
Appl. Phys. Lett., 77,
1268, (2000)
- Papier régulier
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⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films, 380,
195, (2000)
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⋄ GaN and InGaN quantum dots grown by MBE : from UV to red light emission
N. Grandjean, B. Damilano, J. Massies
Proc. of Int. Workshop on Nitride Semiconductors, ,
1002, (2000)
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⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots
A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 180,
375, (2000)
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⋄ Signature of GaN-AlN quantum dots by nonresonant Raman scattering
J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 77,
2174, (2000)
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⋄ Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation
K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean
Mater. Res. Soc. Symp. Proc., 639,
G9.11, (2000)
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⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red
Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc., 639,
G10.1.1-11, (2000)
- Article de conférence - invité
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⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
N. Grandjean, B. Damilano, J. Massies S. Dalmasso
Sol. Stat. Comm., 113,
495, (2000)
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⋄ Surface kinetics of GaN evaporation and growth by molecular beam epitaxy
S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano
Surf. Sci., 450,
191, (2000)
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Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
