Nom : Jean Massies
Statut : Chercheur
Grade : DR Emérite
Équipe(s) : Opto
☎ : +33 4 93 95 4214
Activités
Publications (243)
⋄ Why and how In composition fluctuations appear in InGaN ?
Jean-Yves Duboz, Wanda Isnard, Jesus Zuniga-Perez, and Jean Massies
J. Cryst. Growth, 603, 127033, (2023) - Papier régulier⋄ DUV LEDs based on AlGaN Quantum Dots
Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686, 116860T, (2021) - Article de conférence - invité⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters
G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3, 4054, (2020) - Papier régulier⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12, 045007, (2019) - Papier régulier⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126, 205701, (2019) - Papier régulier⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5, 52, (2019) - Papier régulier⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499, 40, (2018) - Papier régulier⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range
J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33, 075007, (2018) - Papier régulier⋄ Enhanced excitonic emission efficiency in porous GaN
T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies
Sci Rep., 8, 15767, (2018) - Papier régulier⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE
S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215, 1700640, (2018) - Papier régulier⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)
S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil
Superlattices Microstruct., 114, 161, (2018) - Papier régulier⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate
B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 255(5), 1700392, (2017) - Papier régulier⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation
B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25, 33243, (2017) - Papier régulier⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation
B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477, 262, (2017) - Papier régulier⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission
S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122, 085706, (2017) - Papier régulier⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450, 22, (2016) - Papier régulier⋄ Ultraviolet light emitting diodes using III-N quantum dots
J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55, 95, (2016) - Papier invité⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16, 1863, (2016) - Papier régulier⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55, 05FG06, (2016) - Papier régulier⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118, 024303, (2015) - Papier régulier⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source
B. Damilano, J. Brault and J. Massies
J. Appl. Phys., 118, 024304, (2015) - Papier régulier⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363, 93630Z, (2015) - Article de conférence⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986, 89860Z, (2014) - Article de conférence⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29, 084001, (2014) - Papier invité⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter
B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G, 8986, (2014) - Article de conférence - invité⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior
D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B, 88, 125437, (2013) - Papier régulier⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter
B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6, 092105, (2013) - Papier régulier⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy
N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies
J. Appl. Phys., 114, 053505, (2013) - Papier régulier⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission
J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52, 08JG01, (2013) - Papier régulier⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth, 363, 282, (2013) - Papier régulier⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)
D.H. Rich, O. Moshe, B. Damilano, and J. Massies
Phys. Stat. Sol. C, 9, 1011, (2012) - Article de conférence⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A, 209, 465, (2012) - Papier régulier⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties
S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109, 053514, (2011) - Papier régulier⋄ Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D.H. Rich, B. Damilano, and J. Massies
Appl. Phys. Lett., 98, 061903, (2011) - Papier régulier⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range
A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110, 084318, (2011) - Papier régulier⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D. H. Rich, B. Damilano, and J. Massies
J. Phys. Cond. Mat., 44, 505101, (2011) - Papier régulier⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses
D. H. Rich, O. Moshe, B. Damilano and J. Massies
AIP. Proceedings, 1399, 453, (2011) - Article de conférence⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies
J. Appl. Phys., 108, 083510, (2010) - Papier régulier⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, and J. Massies
J. Appl. Phys., 108, 033104, (2010) - Papier régulier⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses
O. Moshe, D.H. Rich, B. Damilano and J. Massies
J. Vac. Sci.Technol.B, 28, C5E25, (2010) - Papier régulier⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission
Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3, 200983426, (2010) - Article de conférence⋄ Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers
M. Carras, G. Maisons. B. Simozrag, M. Garcia, O. Parillaud, J. Massies, X. Marcadet
Appl. Phys. Lett., 96, 161105, (2010) - Papier régulier⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes
M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron, 46, 1058, (2010) - Papier régulier⋄ Blue-green and white color tuning of monolithic light emitting diodes
B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108, 073115, (2010) - Papier régulier⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79, 035328, (2009) - Papier régulier⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?
A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311, 3278, (2009) - Papier régulier⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105, 033519, (2009) - Papier régulier⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246, 845-845, (2009) - Papier régulier⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311, 2002-2005, (2009) - Article de conférence⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C, 6, 1424, (2009) - Article de conférence⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105, 033701, (2009) - Papier régulier⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors
N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2, 715-718, (2009) - Article de conférence⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors
Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
Phys. Stat. Sol. C, 6, 1432, (2009) - Article de conférence⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92, 051911, (2008) - Papier régulier⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth, 310, 948, (2008) - Article de conférence⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities
F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett., 92, 042119, (2008) - Papier régulier⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech., 23, 035020, (2008) - Papier régulier⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding
S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli
J. Appl. Phys., 103, 123112, (2008) - Papier régulier⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001)
S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett., 92, 23111, (2008) - Papier régulier⋄ High doping level in Mg-doped GaN layers grown at low temperature
A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103, 013110, (2008) - Papier régulier⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90, 101117, (2008) - Papier régulier⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities
F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies
Phys. Rev. B, 77, 195303, (2008) - Papier régulier⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068, 51-56, (2008) - Article de conférence⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys, 41, 155102, (2008) - Papier régulier⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1, 121101, (2008) - Papier régulier⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M.
M. Hugues, B. Damilano, J.Y. Duboz, J. Massies
Phys. Rev. B, 75, 115337, (2007) - Papier régulier⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE
Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth, 301-302, 434-436, (2007) - Article de conférence⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source
S. Vézian, A. Le Louarn and J. Massies
J. Cryst. Growth, 303, 419, (2007) - Papier régulier⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c), 4, n°7, 2670-2673, (2007) - Article de conférence⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46, 12-16, (2007) - Papier régulier⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302, 71-74, (2007) - Article de conférence⋄ Monolithic white light emitting diodes with a broad emission spectrum
A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 57-60, (2007) - Article de conférence⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots
R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 183-186, (2007) - Article de conférence⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells
M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies
Phys. Rev. B, 75, 045313, (2007) - Papier régulier⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations
T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz
J. Appl. Phys., 101, 073510, (2007) - Papier régulier⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification
S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, No. 11, 2843-2848, (2007) - Papier régulier⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime
F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst, 41, 376, (2007) - Article de conférence⋄ InAs/AlAsSb based quantum cascade lasers
X. Marcadet, C. Renard, M. Carras, M. Garcia, J. Massies
Appl. Phys. Lett., 91, 161104, (2007) - Papier régulier⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication
S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007, 96-99, (2007) - Article de conférence⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies
J. Cryst. Growth, 309, 1–7, (2007) - Papier régulier⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots
M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies
Phys. Rev. B, 76 (7), 075335-6, (2007) - Papier régulier⋄ Polariton emission in GaN microcavities
M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst, 41, 284, (2007) - Article de conférence⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon
I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson
Phys. Rev. B, 73, 033304, (2006) - Papier régulier⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst, (40), 359-362, (2006) - Article de conférence⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c), 3, N°6, 2325-2328, (2006) - Article de conférence⋄ AlGaN/GaN HEMTs on (001) silicon substrates
S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett., 42, 117-118, (2006) - Papier régulier⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates
Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132, 365-368, (2006) - Article de conférence⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature
I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson
Phys. Stat. Sol. (b), 243(7), 1639, (2006) - Article de conférence⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate
M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck
Appl. Phys. Lett., 88, 231902, (2006) - Papier régulier⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm
M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies
Appl. Phys. Lett., 88, 91111, (2006) - Papier régulier⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate
M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3848, (2006) - Article de conférence⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm
M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3979, (2006) - Article de conférence⋄ Diodes électroluminescentes blanches pour l'éclairage
B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique, , 86, (2006) - Livres et chapitres de livres⋄ Structural characterisation of Sb-based heterostructures by X-ray scattering methods
C. Renard, O. Durand, X. Marcadet, J. Massies, O. Parillaud
Applied Surface Science, 253, 112, (2006) - Article de conférence⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications
M. Richter, B. Damilano, J. Massies, and J.Y. Duboz
Mater. Res. Soc. Symp. Proc., 891, 0891-EE03-29.1, (2006) - Article de conférence⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy
S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40, 295-299, (2006) - Article de conférence⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots
T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11), 113304-1-4, (2006) - Papier régulier⋄ On the determination of the structural parameters of GaxIn1-xAs/AlAsySb1-y superlattices by X-ray diffraction
C. Renard, X. Marcadet, J. Massies
J. Cryst. Growth, 297, 272, (2006) - Papier régulier⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature
I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B, 74, 193308, (2006) - Papier régulier⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4, 393-396, (2005) - Article de conférence⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well
M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro
Electron. Lett., 41 No.10, 595, (2005) - Papier régulier⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy
S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett., 87, 133505, (2005) - Papier régulier⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja
Appl. Phys. Lett., 86, 071105, (2005) - Papier régulier⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy
A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies
IEEE Photon. Techno. Letters, 17, Issue: 6, 1142-1144, (2005) - Papier régulier⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers
B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro
Proc. SPIE Int. Soc. Opt. Eng., 5840, 781, (2005) - Article de conférence⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert
Proc. SPIE Int. Soc. Opt. Eng., 5840, 81, (2005) - Article de conférence⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE
A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies
Proc. SPIE Int. Soc. Opt. Eng., 5840, 72, (2005) - Article de conférence⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing
M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC, 151(5), 433-436, (2005) - Article de conférence⋄ Submicron periodic poling and chemical patterning of GaN
S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies
Appl. Phys. Lett., 87, 062106, (2005) - Papier régulier⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2187-2190, (2005) - Article de conférence⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71, 75311, (2005) - Papier régulier⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4, 383-386, (2005) - Article de conférence⋄ Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates
C. Renard, X. Marcadet, J. Massies Et O. Parillaud
J. Cryst. Growth, 278, 193, (2005) - Papier régulier⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm
J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies
Appl. Phys. Lett., 87, 251109, (2005) - Papier régulier⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures
J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, 864, 579-584, (2005) - Article de conférence⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett., 87, 021102, (2005) - Papier régulier⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111)
N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys, 44, 4902, (2005) - Papier régulier⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7, 2195-2198, (2005) - Article de conférence⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs
Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2720-2723, (2005) - Article de conférence⋄ Surface morphology of AlN and size dispersion of GaN quantum dots
A. Matsuse, N. Grandjean, B. Damilano Et J. Massies
J. Cryst. Growth, 274, 387, (2005) - Papier régulier⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy
B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies
IEE Proc.-Optoelectron., 151, No. 5, 433-436, (2004) - Article de conférence⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12, 2779-2782, (2004) - Article de conférence⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride
S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234, 445, (2004) - Article de conférence⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties
M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257, 259-262, (2004) - Article de conférence⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates
A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4, 167-169, (2004) - Papier régulier⋄ Polarity inversion of GaN(0001) by a high Mg doping
S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies
J. Cryst. Growth, 269, 249, (2004) - Papier régulier⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69, 125329, (2004) - Papier régulier⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36, 659, (2004) - Article de conférence⋄ Phonon deformation potential in hexagonal GaN
F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69, 155215, (2004) - Papier régulier⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy
F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm., 132, 679, (2004) - Papier régulier⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature
F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc., 798, 613-18, (2004) - Article de conférence⋄ Potentialities of GaN-based microcavities in strong coupling regime at room temperature
N. Ollier, F. Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond, J. Massies
Superlattices Microstruct., 34, 599-606, (2004) - Papier régulier⋄ Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation
P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, J. Massies
Phys. Rev. B, 69, 35307, (2004) - Papier régulier⋄ Electronic structure of wurtzite and zinc-blende AlN
P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette
Eur. Phys. J. B, 42, 351, (2004) - Papier régulier⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96, 180, (2004) - Papier régulier⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density
R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7), 626-628, (2003) - Papier régulier⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68, 205301, (2003) - Papier régulier⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems
A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc., 743, L5.5, (2003) - Article de conférence⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett., 82, 499, (2003) - Papier régulier⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm
K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies
Appl. Phys. Lett., 82, 868, (2003) - Papier régulier⋄ In surface segregation in InGaN/GaN quantum wells
A. Dussaigne, B. Damilano, N. Grandjean, J. Massies
J. Cryst. Growth, 251, 471, (2003) - Papier régulier⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys., 22(2), 77-82, (2003) - Papier régulier⋄ Atomic structure of pyramidal defects in Mg-doped GaN
P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68, 235214, (2003) - Papier régulier⋄ Origins of GaN(0001) Surface Reconstructions
S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541, 242, (2003) - Papier régulier⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon
N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B, 68(15), 153313, (2003) - Papier régulier⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), 0(7), 2666-2669, (2003) - Article de conférence⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots
A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin
Mater. Res. Soc. Symp. Proc., 7, 169, (2003) - Article de conférence⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4, 811-815, (2003) - Article de conférence⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys., 93(1), 400-9, (2003) - Papier régulier⋄ Influence of high excitation on excitonic states in GaN/AlGaN quantum wells
D-K. Nelsion, M-A. Jacobson, N. Grandjean, J. Massies, P. Bigenwald, A. Kavokin
Proc. SPIE, 5023, , (2003) - Papier régulier⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector
D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys, 42, Part 2, No. 12B, L1509, (2003) - Papier régulier⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters
D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666, 178, (2003) - Article de conférence⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells
A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E, 17, 64, (2003) - Papier régulier⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates
N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys., 93(9), 5222-5226, (2003) - Papier régulier⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities
N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a), 195, No.3, 543-550, (2003) - Article de conférence⋄ RBS studies of AlGaN/AlN Bragg reflectors
L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a), 195, No.3, 502-507, (2003) - Article de conférence⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)
F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9), 1386, (2003) - Papier régulier⋄ Indium surface segregation in AlSb and GaSb
C. Renard, X. Marcadet, J. Massies, I. Prévot, R. Bisaro, P. Galtier
J. Cryst. Growth, 259, 69, (2003) - Papier régulier⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon
J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42, 118, (2003) - Papier régulier⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots
A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang
Physica E, 17, 60, (2003) - Papier régulier⋄ In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies
Mat. Sci. Eng. B, 93, 150, (2002) -⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1, 61, (2002) - Article de conférence⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon
M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234, 887, (2002) -⋄ Modelling and spectroscopy of GaN microcavities
N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 190, 187, (2002) - Article de conférence⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett., 80, 428, (2002) - Papier régulier⋄ Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
I. Prevot, B. Vinter, X. Marcadet, J. Massies
Appl. Phys. Lett., 81, 3362, (2002) - Papier régulier⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector
L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91, 6095, (2002) - Papier régulier⋄ Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation
S.P. Lepkowski, T. Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies
J. Appl. Phys., 91, 9622, (2002) - Papier régulier⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes
S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a), 192(1), 139-143, (2002) - …⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)
F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys, 41(10B), L1140-2, (2002) - Papier régulier⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells
A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 87, (2002) - Article de conférence⋄ Exciton oscillator strength in GaN/AlGaN quantum wells
M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Stat. Sol. (a), 190, 129, (2002) -⋄ Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 135, (2002) -⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a), 190, 149, (2002) -⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 155, (2002) - Article de conférence⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92, 5602, (2002) - Papier régulier⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate
V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38, 750, (2002) - Papier régulier⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE
Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett., 38(2), 91, (2002) - Papier régulier⋄ Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction
P.A. Shields, R.J. Nicholas, K. Takashina, N. Grandjean, J. Massies
Phys. Rev. B, 65, 195320, (2002) - Papier régulier⋄ Dielectric microcavity in GaN/Si
J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a), 183, 35, (2001) - …⋄ Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells
D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 129, (2001) - …⋄ Optical properties of self-assembled InGaN/GaN quantum dots
T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 22, (2001) - …⋄ Modeling of absorption and emission spectra of InGaN layers grown by MBE
L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies
Mat. Sci. Eng. B, 82, 71, (2001) - …⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Mat. Sci. Eng. B, 82, 140, (2001) - …⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia
T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Sol. Stat. Comm., 117, 445, (2001) - Papier régulier⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy
P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78, 1252, (2001) - Papier régulier⋄ High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy
F. Semond, P. Lorenzini, N. Grandjean, J. Massies
Appl. Phys. Lett., 82, 335, (2001) - Papier régulier⋄ Photoconductance measurements and Stokes shift in InGaN alloys
J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 197, (2001) - …⋄ Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells
B. Damilano, N. Grandjean, C. Pernot, J. Massies
Jpn. J. Appl. Phys, 40, L918, (2001) - …⋄ Group-III nitride quantum heterostructures grown by molecular beam epitaxy
N. Grandjean, B. Damilano, J. Massies
J. Phys.: Condens. Matter, 13, 6945, (2001) - Papier régulier⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78, 1538, (2001) - Papier régulier⋄ GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy
N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Semicond. Sci. Tech., 16, 358, (2001) - Papier régulier⋄ Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy
L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 139, (2001) - …⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B, 82, 256, (2001) - …⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible spectrum
B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 224, (2001) - …⋄ Surface morphology of GaN grown by molecular beam epitaxy
S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82, 56, (2001) - …⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111)
F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 183, 163, (2001) - …⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization
M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For., 353-356, 795, (2001) - …⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties
B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth, 227/228, 466, (2001) - …⋄ Potentialities of GaN-based microcanivities grown on silicon substrates
N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 188, 519, (2001) - …⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields
M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 61, (2001) - …⋄ In-situ etching at InGaAs/GaAs quantum well interfaces
E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia
J. Cryst. Growth, 222, 471, (2001) - …⋄ Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes
M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 228, 129, (2001) - …⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect
P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b), 228, 65, (2001) - …⋄ Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 839, (2001) - …⋄ Micro-Raman study of wurtzite AlN layers grown on Si(111)
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond, J. Massies
Phys. Stat. Sol. (a), 188, 511, (2001) - …⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 325, (2001) - …⋄ Nuclear microprobe analysis of GaN bases light emitting diodes
L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz
Phys. Stat. Sol. (a), 188, 171, (2001) - …⋄ Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure
A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux
Phys. Rev. B, 89, 3775, (2001) - Papier régulier⋄ Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies
J. Appl. Phys., 89, 1070, (2001) - Papier régulier⋄ Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 224, 53, (2001) - …⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields
D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 851, (2001) - …⋄ Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect
M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Rev. B, 64, 121304, (2001) - Papier régulier⋄ Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies
Appl. Phys. Lett., 79, 1483, (2001) - Papier régulier⋄ Direct signature of strained GaN quantum dots by Raman scattering
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 79, 686, (2001) - Papier régulier⋄ Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies
P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
Phys. Rev. B, 63, 245319, (2001) - Papier régulier⋄ Impact ionization of excitons in an electric field in GaN
D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart
J. Phys.: Condens. Matter, 13, 7043, (2001) - Papier régulier⋄ Magneto-photoluminescence of AlGaN/GaN quantum wells
P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
J. Cryst. Growth, 230 (3-4), 487, (2001) - …⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy, 202, 212, (2001) - …⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Phys. Rev. B, 64, 115319, (2001) - Papier régulier⋄ GaN and InGaN quantum dots grown by MBE : from UV to red light emission
N. Grandjean, B. Damilano, J. Massies
Proc. of Int. Workshop on Nitride Semiconductors, , 1002, (2000) - …⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K
B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie
Appl. Phys. Lett., 77, 1268, (2000) - Papier régulier⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate
N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
J. Appl. Phys., 88, 183, (2000) - Papier régulier⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett., 77, 2189, (2000) - Papier régulier⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films, 380, 195, (2000) - …⋄ Growth of gallium nitride epitaxial layers and applications
B. Beaumont, P. Gibart, N. Grandjean, J. Massies
C.R. Acad. Sci. Paris, 1, série IV, 35, (2000) - …⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)
S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61, 7618, (2000) - Papier régulier⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range
B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science, 164, 241, (2000) - …⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
N. Grandjean, B. Damilano, J. Massies S. Dalmasso
Sol. Stat. Comm., 113, 495, (2000) - Papier régulier⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures
P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Mater. Res. Soc. Symp. Proc., 639, G9.8, (2000) - …⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180, 363, (2000) - …⋄ Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry
L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies,
Jpn. J. Appl. Phys, 39, 20, (2000) - Papier régulier⋄ Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies
Thin Solid Films, 364, 156, (2000) - …⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures
M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald
Phys. Stat. Sol. (a), 178, 101, (2000) - …⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 180, 127, (2000) - …⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots
A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 180, 375, (2000) - …⋄ Surface kinetics of GaN evaporation and growth by molecular beam epitaxy
S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano
Surf. Sci., 450, 191, (2000) - …⋄ Signature of GaN-AlN quantum dots by nonresonant Raman scattering
J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 77, 2174, (2000) - Papier régulier⋄ High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates
E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude
Appl. Phys. Lett., 77, 2551, (2000) - Papier régulier⋄ Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies
Sol. Stat. Comm., 115, 575, (2000) - …⋄ Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures
E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639, G7.5, (2000) - …⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red
Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc., 639, G10.1.1-11, (2000) - Article de conférence - invité⋄ High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates
W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639, G7.3, (2000) - …
Contrats en cours
Contrats terminés
Encadrements en cours
Encadrements terminés
YuanYang Xia (Doctorant) (2013) Abdelkarim Kahouli (Doctorant) (2012) Nasser Kriouche (Doctorant) (2011) Arnaud Le Louarn (Doctorant) (2006) Sébastien Pezzagna (Doctorant) (2005) Franck Natali (Doctorant) (2003) Magali Mesrine (Doctorant) (1999)
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