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⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates

P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf
Jpn. J. Appl. Phys., 48, 031002, (2009)

⋄ Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy

P. Vennéguès, Z. Bougrioua and T. Guehne
Jpn. J. Appl. Phys, 46, n° 7A, 4089, (2007)