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⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12, 3631, (2021)
Abstract online (HAL) : click here...

⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11, 2651, (2020)
Abstract online (HAL) : click here...

⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate

T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5), 1700399, (2018)
Abstract online (HAL) : click here...

⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier
J. Appl. Phys., 113, 174501, (2013)

⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier
Appl. Phys. Lett., 102, 093503, (2013)

⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
ECS Solid State Letters, 2, p4, (2012)

⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 )

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Mat. Sci. Eng. B, 52, 2547-2550, (2012)

⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
Semicond. Sci. Tech., 27, 125010, (2012)

⋄ Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria,
Nanotechnology, 23, 395204, (2012)

⋄ Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria
Appl. Phys. Lett., 101, 093505, (2012)

⋄ Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría
Appl. Phys. Lett., 99, 213504, (2011)

⋄ Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings
Microelectronic Engineering, 88 (10), 3140, (2011)

⋄ Ohmic Contact Resistance dependence on Temperature for GaN devices

A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings
Mat. Sci. For., 679-680, 816-819, (2011)

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19, 2683-2688 , (2010)

⋄ 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon
Mat. Sci. For., 645-648, 1207-1210, (2010)

⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance

Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique, 10, 73-77, (2009)

⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C, 6 - S2, 1016-1019, (2009)
Abstract online (HAL) : click here...

⋄ Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahrèche , P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, C. Gaquière, and D. Théron
Appl. Phys. Lett., 94, 233506, (2009)
Abstract online (HAL) : click here...

⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311, 2002-2005, (2009)

⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105, 033701, (2009)

⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration

P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206, 371-374, (2009)

⋄ GaN transistor characteristics at elevated temperatures

A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán
J. Appl. Phys., 106, 074519, (2009)

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2, 715-718, (2009)

⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2, 1020-1023, (2009)

⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth, 310, 948, (2008)
Abstract online (HAL) : click here...

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068, 51-56, (2008)

⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29, 1187-1189, (2008)

⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c), 5 - n°6, 1971-1973, (2008)

⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C

L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron
Appl. Phys. Lett., 92, 043504, (2008)
Abstract online (HAL) : click here...

⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302, 71-74, (2007)

⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies
J. Cryst. Growth, 309, 1–7, (2007)