CNRS-CRHEA | Publications

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⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance

Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique, 10, 73-77, (2009)

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2, 715-718, (2009)

⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth, 310, 948, (2008)
Abstract online (HAL) : click here...

⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c), 5 - n°6, 1971-1973, (2008)

⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C

L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron
Appl. Phys. Lett., 92, 043504, (2008)
Abstract online (HAL) : click here...

⋄ Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki
J. Appl. Phys., 102, 103701 , (2007)
Abstract online (HAL) : click here...

⋄ Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

P. Muret, J. Pernot, M. Azize, Z. Bougrioua
J. Appl. Phys., 102, 053701, (2007)

⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C

⋄ Low electron mobility of field-effect transistor determined by modulated magnetoresistance

⋄ Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

⋄ Magnetotransport characterization of AlGaN/GaN interfaces

⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

⋄ Photoelectric properties of highly excited GaN-Fe epilayers grown by modulation- and continuous-doping techniques

⋄ Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors

⋄ Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study

⋄ Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures

⋄ Quantum and transport lifetimes of two-dimentional electrons gas in AlGaN/GaN heterostructures

⋄ Carrier profiles in Fe doped GaN layers grown by MOVPE

⋄ Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

⋄ Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

⋄ Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures

⋄ Failure analysis of a cascade laser structure by electrostatic force microscopy

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