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Principaux résultats extraits du rapport d'activité 2006-2010 du CRHEA :

• H01: 3C-SiC Heteroepitaxy on Silicon substrates
• H02: Graphene growth on 3C-SiC/Si and 6H-SiC
• H03: Strain engineering in GaN structures
• H04: AlGaN/GaN High Electron Mobility Transistors
• H05: Integration of GaN with silicon technology
• H06: Defect reduction in semipolar nitrides by selective epitaxy
• H07: Monolithic white light emitting diodes
• H08: GaN/AlGaN nanostructures: from quantum dots to dashes
• H09: Towards a green laser based on nitrides
• H10: Detectors based on AlGaN
• H11: Dilute nitride (Ga,In)(N,As) : from material to laser diodes
• H12: Strong-coupling at room temperature: GaN and ZnO microcavities
• H13: GaN Nanophotonics on silicon
• H14: Nitrides for micro-nano-resonators
• H15: Growth and characterization of GaN nanowires
• H16: Intrinsic properties of (Zn,Co)O magnetic alloys
• H17: Nonpolar (Zn,Mg)O/ZnO heterostructures
• H18: Heteroepitaxy and Homoepitaxy of ZnO and related alloys
• H19: Quantitative TEM of GaN/(Al0.5,Ga0.5)N quantum dots
• H20: Microstructure of non and semipolar wurtzite heteroepitaxial films

Ressources complémentaires :

• Accès au rapport d'activité 2006-2010 (pdf - 3,3 Mo, en anglais)