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Principaux résultats extraits du rapport d'activité 2006-2010 du CRHEA :
H01:
3C-SiC Heteroepitaxy on Silicon substrates
H02:
Graphene growth on 3C-SiC/Si and 6H-SiC
H03:
Strain engineering in GaN structures
H04:
AlGaN/GaN High Electron Mobility Transistors
H05:
Integration of GaN with silicon technology
H06:
Defect reduction in semipolar nitrides by selective epitaxy
H07:
Monolithic white light emitting diodes
H08:
GaN/AlGaN nanostructures: from quantum dots to dashes
H09:
Towards a green laser based on nitrides
H10:
Detectors based on AlGaN
H11:
Dilute nitride (Ga,In)(N,As) : from material to laser diodes
H12:
Strong-coupling at room temperature: GaN and ZnO microcavities
H13:
GaN Nanophotonics on silicon
H14:
Nitrides for micro-nano-resonators
H15:
Growth and characterization of GaN nanowires
H16:
Intrinsic properties of (Zn,Co)O magnetic alloys
H17:
Nonpolar (Zn,Mg)O/ZnO heterostructures
H18:
Heteroepitaxy and Homoepitaxy of ZnO and related alloys
H19:
Quantitative TEM of GaN/(Al0.5,Ga0.5)N quantum dots
H20:
Microstructure of non and semipolar wurtzite heteroepitaxial films
Ressources complémentaires :
Accès au
rapport d'activité 2006-2010
(pdf - 3,3 Mo, en anglais)