9 enregistrements
classés par date
- Critères de recherche : Kim-Chauveau
| Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters |
| P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson |
| J. Cryst. Growth 353 (2012) 108 - Papier régulier |
| |
| Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure |
| B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.-M. Lamy, M. Akhter, P. P. Maaskant, E. Frayssinet, P. de Mierry, and J.-Y. Duboz |
| Phys. Stat. Sol. C 9 (2012) 931 - Article de conférence |
| |
| Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes |
| H. Kim-Chauveau,E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck |
| J. Cryst. Growth 338 (2012) 20 - Papier régulier |
| |
| Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes |
| Ragh Charash, Hyonju Kim-Chauveau, Agam Vajpeyi, Mahbub Akther, Pleun P. Maaskant,
Eric Frayssinet, Philippe de Mierry, Jean-Yves Duboz, and Brian Corbett |
| Phys. Stat. Sol. C 8 (2011) 2378 - Article de conférence |
| |
| Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells |
| J.-M. Chauveau, M. Teisseire,H. Kim-Chauveau, C. Morhain, C. Deparis,
and B. Vinter |
| J. Appl. Phys. 109 (2011) 102420 - Article de conférence - invité |
| |
| The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates |
| H. Kim-Chauveau, P. de Mierry, J.-M. Chauveau and J.-Y. Duboz |
| J. Cryst. Growth 316 (2011) 30 - Papier régulier |
| |
| Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates |
| J.-M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Deparis, C. Morhain, and B. Vinter |
| Appl. Phys. Lett. 97 (2010) 081903 - Papier régulier |
| |
| Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding |
| R. Charash, H. Kim-Chauveau, J-M. Lamy, M. Akther, P. P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J-Y. Duboz, A. Hangleiter and B. Corbett |
| Appl. Phys. Lett. 98 (2010) 201112 - Papier régulier |
| |
| In-plane anisotropy characteristics of GaN epilayers grown on A-face sapphire substrates |
| HJ. Kim-Chauveau, P. De Mierry, H. Cabane, and D. Gindhart |
| J. Appl. Phys 104 (2008) 113516 - Papier régulier |
| |
