| From excitonic to photonic polariton condensate in a ZnO-based microcavity |
| Feng Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech |
| Phys. Rev. Lett. 110 (2013) 196406 - Papier régulier |
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| Temperature-dependent optical properties of epitaxial CdO thin films determined by spectroscopic ellipsometry and Raman scattering |
| S. G. Choi, L. M. Gedvilas, S. Y. Hwang, T. J. Kim, Y. D. Kim, J. Zúñiga-Pérez, and V. Munoz-Sanjose |
| J. Appl. Phys. 113 (2013) 183515 - Papier régulier |
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| AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission |
| Julien Brault, Benjamin Damilano, Borge Vinter, Philippe Vennéguès, Mathieu Leroux, Abdelkarim Kahouli, and Jean Massies |
| Jpn. J. Appl. Phys. 52 (2013) 08JG01 - Papier régulier |
| |
| Blue Light-Emitting Diodes Grown on ZnO Substrates |
| Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht,I.-C. Robin,J.L.Santailler, G. Feuillet,J.-M. Chauveau |
| Appl. Phys. Express 6 (2013) 042101 - Papier régulier |
| |
| High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy |
| R. Oliva, J. Ibañez, L. Artus, R. Cusco, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé |
| J. Appl. Phys. 113 (2013) 053514 - Papier régulier |
| |
| Imaging and counting threading
dislocations in c-oriented epitaxial
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| M Khoury, A Courville, B Poulet, M Teisseire, E Beraudo,
M J Rashid, E Frayssinet, B Damilano, F Semond, O Tottereau
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| Semicond. Sci. Tech. 28 (2013) 035006 - Papier régulier |
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| Role of magnetic polarons in ferromagnetic GdN |
| F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vezian, B. Damilano, Y. Cordier, F. Semond and C. Meyer |
| Phys. Rev. B 87 (2013) 035202 - Papier régulier |
| |
| Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes |
| J. Brault, B.Damilano, A.Kahouli, S.Chenot, M.Leroux, B.Vinter, J.Massies |
| J. Cryst. Growth 363 (2013) 282 - Papier régulier |
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| Temperature dependence of the direct bandgap and transport properties of CdO |
| S. K. Vasheghani Farahani, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, C. F. McConville, and T. D. Veal
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| Appl. Phys. Lett. 102 (2013) 022102 - Papier régulier |
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| Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate |
| J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier |
| Microelec. Engineering 105 (2013) 65 - Papier régulier |
| |
| On the interplay of point defects and Cd in non-polar ZnCdO films |
| A. Zubiaga, F. Reurings, F. Tuomisto, F. Plazaola, J. A. García, A. Yu. Kuznetsov, W. Egger, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé |
| J. Appl. Phys. 113 (2013) 023512 - Papier régulier |
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| Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy |
| Emre Gür, G. Tabares, A. Arehart, J. M. Chauveau, A. Hierro, and S. A. Ringel |
| J. Appl. Phys. 112 (2012) 123709 - Papier régulier |
| |
| On the origin of basal stacking faults in nonpolar wurtzite films epitaxially
grown on sapphire substrates |
| P. Vennéguès, J. M. Chauveau, Z. Bougrioua, T. Zhu, D. Martin, and N. Grandjean |
| J. Appl. Phys. 112 (2012) 113518 - Papier régulier |
| |
| Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 ) |
| A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno |
| Mat. Sci. Eng. B 52 (2012) 2547-2550 - Papier régulier |
| |
| Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates |
| Mohammed Ramdani, Magdalena Chmielowska, Yvon Cordier, Sébastien Chenot, Fabrice Semond |
| Solid State Electronics 75 (2012) 86-92 - Papier régulier |
| |
| Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors |
| A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M R Jennings, P M Gammon, C A Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria, |
| Nanotechnology 23 (2012) 395204 - Papier régulier |
| |
| Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon |
| Reveret, F; Disseix, P; Leymarie, J; Vasson, A; Semond, F; Leroux, M |
| Superlattices and Microstructures 52 (2012) 541 - Papier régulier |
| |
| Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen |
| P. Muret, D. Tainoff, C. Morhain, and J.-M. Chauveau |
| Appl. Phys. Lett. 101 (2012) 122104 - Papier régulier |
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| Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography |
| A. Bengoechea-Encabo, S. Albert, M. A. Sanchez-Garcia, L. L. Lopez, S. Estradé, J. M. Rebled, E. Peiro, G. Nataf, P. de Mierry, J. Zúñiga-Pérez, and E. Calleja |
| J. Cryst. Growth 353 (2012) 1-4 - Papier régulier |
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| Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters |
| P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson |
| J. Cryst. Growth 353 (2012) 108 - Papier régulier |
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| GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes |
| P. M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez |
| Optics Express 20 (2012) 18707 - Papier régulier |
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| Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale |
| A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria |
| Appl. Phys. Lett. 101 (2012) 093505 - Papier régulier |
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| From strong to weak coupling regime in a single GaN microwire up to room temperature |
| A. Trichet, F. Médard, J. Zúñiga-Pérez, B. Alloing and M. Richard |
| New J. Phys. 14 (2012) 073004 - Papier régulier |
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| Non-linear emission properties of ZnO microcavities |
| Guillet, T; Brimont, C; Valvin, P; Gil, B; Bretagnon, T; Medard, F; Mihailovic, M; Zuniga-Perez, J; Semond, F; Bouchoule, S |
| Phys. Stat. Sol. C 9 (2012) 1225 - Article de conférence - invité |
| |
| Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001) |
| A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel |
| Mat. Sci. For. 717-720 (2012) 625 - Article de conférence |
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| CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity |
| M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier |
| Materials Science Forum 717-720 (2012) 621 - Article de conférence |
| |
| Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC |
| M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier |
| J. Cryst. Growth 349 (2012) 27 - Papier régulier |
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| High quality factor AlN nanocavities embedded in a photonic crystal waveguide |
| D.Sam-Giao, D.Néel, S.Sergent, B.Gayral, M.J.Rashid, F.Semond, J.Y.Duboz,
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| Appl. Phys. Lett. 100 (2012) 191104 - Papier régulier |
| |
| A graphene electron lens |
| L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken |
| Appl. Phys. Lett. 100 (2012) 153106 - Papier régulier |
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| Fabrication and properties of etched GaN nanorods |
| P. Shields, M. Hugues, J. Zúñiga-Pérez, M. Cooke, M. Dineen, W. Wang, F. Causa, and D. Allsopp |
| Phys. Stat. Sol. C 9 (2012) 631 - Article de conférence |
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| LO-phonon-assisted polariton lasing in a ZnO-based microcavity |
| L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet |
| Phys. Rev. B 85 (2012) 121201 - Papier régulier |
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| Optical investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells |
| L. Béaur, T. Bretagnon, B. Gil, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire and J.-M. Chauveau |
| Phys. Stat. Sol. C 9 (2012) 1320 - Article de conférence |
| |
| Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain
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| M. Korytov, J. A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius,
J.-L. Rouvière, and P. Vennégués |
| J. Appl. Phys. 111 (2012) 084309 - Papier régulier |
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| A new approach for AFM cantilever elaboration with 3C-SiC |
| S. Jiao, J. F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier |
| Materials Letters 77 (2012) 54 - Papier régulier |
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| Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon |
| M. Zielinski, J. F. Michaud, S. Jiao, T. Chassagne, A. E. Bazin, A. Michon, M. Portail and D. Alquier |
| J. Appl. Phys. 111 (2012) 053507 - Papier régulier |
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| Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV |
| L. F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.-Ch. Moreno, E. Frayssinet, and F. Semond |
| J. Appl. Phys. 111 (2012) 023511 - Papier régulier |
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| Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates |
| H. P. David Schenk, Alexis Bavard, Eric Frayssinet, Xi Song, Frederic Cayrel, Hassan Ghouli,Melania Lijadi, Laurent Naım, Mark Kennard, Yvon Cordier, Daniel Rondi and Daniel Alquier |
| APEX 5 (2012) 025504 - Papier régulier |
| |
| Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure |
| B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.-M. Lamy, M. Akhter, P. P. Maaskant, E. Frayssinet, P. de Mierry, and J.-Y. Duboz |
| Phys. Stat. Sol. C 9 (2012) 931 - Article de conférence |
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| Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition |
| S. Jiao, M. Portail, J. F. Michaud, M. Zielinski, T. Chassagne, D. Alquier |
| Materials Science Forum 711 (2012) 61 - Article de conférence |
| |
| Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter |
| B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies |
| Phys. Stat. Sol. A 209 (2012) 465 - Papier régulier |
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| Fabrication and growth of GaN-based micro and nanostructures |
| B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez |
| Int. J. of Nanotechnology 9 (2012) 412-427 - Papier invité |
| |
| Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents |
| A. Redondo-Cubero , A. Hierro , J.-M. Chauveau , K. Lorenz , G. Tabares , N. Franco , E. Alves and E. Muñoz |
| CrystEngComm 14 (2012) 1637 - Papier régulier |
| |
| Graphene/SiC interface control using propane-hydrogen CVD
on 6H-SiC(0001) and 3C-SiC(111)/Si(111) |
| A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier,
A. Tiberj, T. Chassagne, M. Zielinski |
| Materials Science Forum 711 (2012) 253 - Article de conférence |
| |
| Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC |
| J. Biscarrat, X. Song, J. F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier |
| Materials Science Forum 711 (2012) 179 - Article de conférence |
| |
| Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers |
| S. Jiao, M. Zielinski, J. F. Michaud, T. Chassagne, M. Portail, D. Alquier |
| Materials Science Forum 711 (2012) 84 - Article de conférence |
| |
| Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and
semipolar orientations |
| P. Vennéguès |
| Semicond. Sci. Tech. 27 (2012) 024004 - Papier régulier |
| |
| Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process |
| E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault,Y. Cordier, M.-P. Besland, K. Isoird |
| Mat. Sci. For. 711 (2012) 228-232 - Article de conférence |
| |
| Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes |
| H. Kim-Chauveau,E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck |
| J. Cryst. Growth 338 (2012) 20 - Papier régulier |
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| High quality factor photonic
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| T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil,
D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud |
| Phys. Stat. Sol. B 249 (2012) 449 - Papier régulier |
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| Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111) |
| D.H. Rich, O. Moshe, B. Damilano, and J. Massies |
| Phys. Stat. Sol. C 9 (2012) 1011 - Article de conférence |
| |
| Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate |
| M. Mattalah, A. Soltani, J.-C. Gerbedoen, Az. Ahaitouf, N. Defrance, Y. Cordier, and J.-C. De Jaeger |
| Phys. Stat. Sol. C 9 (2012) 1083-1087 - Article de conférence |
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| Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy |
| Yvon Cordier, Franck Natali, Magdalena Chmielowska, Mathieu Leroux, Catherine Chaix, and Pierre Bouchaib |
| Phys. Stat. Sol. C 9 (2012) 523-526 - Article de conférence |
| |
| Electromechanical Transconductance Properties of a GaN MEMS Resonator with fully integrated HEMT Transducers |
| Marc Faucher, Yvon Cordier, Matthieu Werquin, Lionel Buchaillot, Christophe Gaquière and Didier Théron |
| JMEMS 21 (2012) 370-378 - Papier régulier |
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| Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si |
| X. Song, J. Biscarrat; A. E. Bazin, J. F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier |
| Materials Science Forum 711 (2012) 154 - Article de conférence |
| |
| Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy |
| Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.-M. Chauveau |
| Appl. Phys. Lett. 99 (2011) 261910 - Papier régulier |
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| Hybrid cavity polaritons in a ZnO-perovskite microcavity |
| G. Lanty, S. Zhang, J. S. Lauret, E. Deleporte, P. Audebert, S. Bouchoule, X. Lafosse, J. Zúñiga-Pérez, F. Semond, D. Lagarde, F. Médard, and J. Leymarie |
| Phys. Rev. B 84 (2011) 195449 - Papier régulier |
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| Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC |
| X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier |
| Nucl. Instr. and Method Phys. Research B 269 (2011) 2020 - Papier régulier |
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| Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111) |
| O. Moshe, D. H. Rich, B. Damilano, and J. Massies |
| J. Phys. Cond. Mat. 44 (2011) 505101 - Papier régulier |
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| Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain |
| A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail |
| Phys. Stat. Sol. C 9 (2011) 175-178 - Article de conférence |
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| Polariton lasing in a hybrid bulk ZnO microcavity |
| T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
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| Appl. Phys. Lett. 99 (2011) 161104 - Papier régulier |
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| Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN |
| A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría |
| Appl. Phys. Lett. 99 (2011) 213504 - Papier régulier |
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| AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range |
| Malinowski, PE; Duboz, JY; De Moor, P; John, J; Minoglou, K; Srivastava, P; Semond, F; Frayssinet, E; Giordanengo, B; BenMoussa, A; Gottwald, A; Laubis, C; Mertens, R; Van Hoof, C |
| Electron Device Letters 32 (2011) 1561 - Papier régulier |
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| Nanopendeo coalescence overgrowth of GaN on etched nanorod array |
| P. Shields, C. Liu, A. Šatka, A. Trampert, J. Zúñiga-Pérez, B. Alloing, D. Haško, F. Uherek, W. Wang, F. Causa, D. Allsopp |
| Phys. Stat. Sol. C 8 (2011) 2334 - Article de conférence |
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| GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high
luminescence efficiency in the near ultraviolet range |
| A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies |
| J. Appl. Phys. 110 (2011) 084318 - Papier régulier |
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| Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition |
| M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann |
| J. Cryst. Growth 328 (2011) 13 - Papier régulier |
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| Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells |
| L. Béaur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.-M. Chauveau |
| Phys. Rev. B 84 (2011) 165312 - Papier régulier |
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| Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET |
| Fontsere, A., Pérez-Tomás, A., Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P.M., Jennings, M.R. |
| Microelectronic Engineering 88 (10) (2011) 3140 - Papier régulier |
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| Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure |
| T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.-P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V. V. Korotyeyev, and V. A. Kochelap |
| Appl. Phys. Lett. 99 (2011) 082101 - Papier régulier |
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| Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells |
| G. Tabares, A. Hierro, B. Vinter, and J.-M. Chauveau |
| Appl. Phys. Lett. 99 (2011) 071108 - Papier régulier |
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| Thermal effects in AlGaN/GaN/Si high electron mobility transistors |
| I. Saidi, Y. Cordier, M.Chmielowska, H. Mejri and H. Maaref |
| Solid State Electronics 61 (2011) 1-6 - Papier régulier |
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| High quality factor of AlN microdisks embedding GaN quantum dot |
| M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud |
| Phys. Stat. Sol. C 8 (2011) 2328 - Article de conférence |
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| High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots |
| M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud |
| Optics Letters 36 (2011) 2203-2205 - Papier régulier |
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| RF Performance of AlGaN/GaN High Electron Mobility Transistors grown on Silicon (110) |
| Diego Marti, Colombo R. Bolognesi, Yvon Cordier, Magdalena Chmielowska, Mohammed Ramdani |
| Applied Physics Express 4 (2011) 064105 - Papier régulier |
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| AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate |
| D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud |
| Appl. Phys. Lett. 98 (2011) 261106 - Papier régulier |
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| Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes |
| Ragh Charash, Hyonju Kim-Chauveau, Agam Vajpeyi, Mahbub Akther, Pleun P. Maaskant,
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| Phys. Stat. Sol. C 8 (2011) 2378 - Article de conférence |
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| Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime |
| Laurent Orosz, François Réveret, Sophie Bouchoule, Jesus Zúñiga-Pérez, François Médard, Joël Leymarie, Pierre Disseix, Martine Mihailovic, Eric Frayssinet, Fabrice Semond, Mathieu Leroux, Meletios Mexis, Christelle Brimont and Thierry Guillet |
| Appl. Phys. Express 4 (2011) 072001 - Papier régulier |
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| Laser emission with excitonic gain in a ZnO planar microcavity |
| T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule |
| Appl. Phys. Lett. 98 (2011) 211105 - Papier régulier |
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| GaN nanocolumns on sapphire by ammonia-MBE: From self-organized
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| Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes |
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| Appl. Phys. Lett. 98 (2011) 141104 - Papier régulier |
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| Electron mobility in CdO films |
| S. K. Vasheghani Farahani, T. D. Veal, P. D. C. King, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C. F. McConville
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| Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells |
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| J. Appl. Phys. 109 (2011) 102420 - Article de conférence - invité |
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| Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy |
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| Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces |
| E. Al Alam, I. Cortés, M.-P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho |
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| Comparison of Fe and Si doping of GaN: An EXAFS and Raman study |
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| Mat. Sci. Eng. B 176 (2011) 723 - Papier régulier |
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| Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties |
| S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies |
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| Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates |
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| Growth of GaN based structures on focused ion beam patterned templates |
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| Phys. Stat. Sol. C 8 (2011) 1516–1519 - Article de conférence |
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| Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy |
| Eric Frayssinet, Yvon Cordier, H. P. David Schenk, and Alexis Bavard |
| Phys. Stat. Sol. C 8 (2011) 1479-1482 - Article de conférence |
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| The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates |
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| Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111) |
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| Determination of defect content and defect profile in semiconductor heterostructures |
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| J. Phys.: Conf. Ser. 265 (2011) 012004 - Article de conférence |
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| Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition |
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| J. Vac. Sci. Technol. A 29 (2011) 03A104 - Article de conférence |
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| On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy |
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| Ohmic Contact Resistance dependence on Temperature for GaN devices |
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| Materials Science Forum 679-680 (2011) 816-819 - Article de conférence |
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| Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells |
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| Acta Physica Polonica A 119 (2011) 107-110 - Article de conférence |
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| Analytical model of stress relaxation in 3C-SiC layers on silicon |
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| Materials Science Forum 679-680 (2011) 79 - Article de conférence |
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| Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers |
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| Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime |
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| Measurement of Pulsed Current–Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K |
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| Acta Physica Polonica A 119 (2011) 196-198 - Article de conférence |
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| Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments |
| X. Song, A. E. Bazin, J. F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier |
| Materials Science Forum 679-680 (2011) 193 - Article de conférence |
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| Study of the epitaxial relationships between III-nitrides and M-plane
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| X-ray detectors based on GaN Schottky diodes |
| Jean-Yves Duboz, Eric Frayssinet, Sébastien Chenot, Jean-Luc Reverchon, Mourad idir |
| Appl. Phys. Lett. 97 (2010) 163504 - Papier régulier |
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| Blue-green and white color tuning of monolithic light emitting diodes |
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| Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation |
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| Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on r-plane sapphire from 0.74 to 6.45 eV
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| Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111) |
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| Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties |
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| Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition |
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| Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth |
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| Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities |
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| Carrier transfer and recombination dynamics of a long-lived and visible
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| Photoemission of Si 1s --> 2pz transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection |
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| Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes |
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| IEEE J Quantum Electron 46 (2010) 1058 - Papier régulier |
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| IEEE Trans. Electron Devices 57 (2010) 1497-1503 - Papier régulier |
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| Whispering gallery modes in zinc oxide micro- and nanowires |
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| Phys. Stat. Sol. B 247 (2010) 1282 - Papier régulier |
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| Luminescence properties of ZnO/Zn1-xCdxO/ZnO double heterostructures |
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| Two-dimensional confined photonic wire resonators: strong light-metter coupling |
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| Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation |
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| Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission |
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| Phys. Stat. Sol. C 1-3 (2010) 200983426 - Article de conférence |
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| Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN |
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| Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers |
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| Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure
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| Tuning the lateral density of ZnO nanowires arrays and its applications as physical templates for radial nanowire heterostructures |
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| Materials Science Forum 645-648 (2010) 753-758 - Article de conférence - invité |
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| Self-organized growth of ZnO-based nano- and microstructures |
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| High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature |
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| AIP Conf Proc 1292 (2010) 51 - Article de conférence |
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| Materials Science Forum 645-648 (2010) 155-158 - Article de conférence |
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| Mater. Res. Soc. Symp. Proc. 1246 (2010) B09-04 - Article de conférence |
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| 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility |
| A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon |
| Materials Science Forum 645-648 (2010) 1207-1210 - Article de conférence |
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| Deposited thin SiO2 for gate oxide on n-type and p-type GaN |
| M. Placidi, A. Constant, A. Fontserè, E. Pausas, I. Cortes, Y. Cordier, N. Mestres, R. Pérez, M.Zabala, J. Millán, P. Godignon and A. Pérez-Tomás |
| Journal of the Electrochemical Society 157 (2010) H1008-H1013 - Papier régulier |
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| Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses |
| M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J. F. Michaud, and D. Alquier |
| AIP Conf Proc 1292 (2010) 115 - Article de conférence |
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| Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon |
| S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J. F. Michaud, M. Portail, and D. Alquier |
| AIP Conf Proc 1292 (2010) 15 - Article de conférence |
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| Anisotropic electron spin relaxation in bulk GaN |
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| Appl. Phys. Lett. 95 (2009) 192107 - Papier régulier |
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| Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance |
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| Revue de l Electricite et de l Electronique 10 (2009) 73-77 - Article de conférence |
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| Interfacial properties of AlN and oxidized AlN on Si |
| M. Placidi, A. Perez-Tomas, J. C. Moreno, E. Frayssinet, F. Semond, A.Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán. |
| surface science 604 (2009) 63 - Papier régulier |
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| Phase separation in GaN/AlGaN quantum dots |
| M. Benaissa, L. Gu, M. Korytov, T. Huault, P. A. van Aken, J. Brault, and
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| Backside illuminated GaN on Si Schottky photodiode for UV radiation detection |
| P. E. Malinowski, J. John, J. Y. Duboz, A. Lorenz, J. G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J. Francois Hochedez and B. Giordaneng |
| Electron Device Lett 30 (2009) 1308 - Papier régulier |
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| First demonstration and performance of AlGaN based focal plane array for deep-UV imaging |
| J.-L. Reverchon, S. Bansropun, J. A. Robo, J. P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J. Y. Duboz, M. Idir |
| SPIE procedings 7474 (2009) 74741G - Article de conférence |
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| Single-ion anisotropy in Mn-doped diluted magnetic semiconductors |
| A. Savoyant, A. Stepanov, R. Kuzian, C. Deparis, C. Morhain, and K. Grasza |
| Phys. Rev. B 80 (2009) 115203 - Papier régulier |
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| In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates |
| Philippe Vennéguès, Tiankai Zhu, Zahia Bougrioua, Denis Martin,
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| Jpn. J. Appl. Phys. 48 (2009) 090211 - Papier régulier |
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| Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature |
| S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J. C. Moreno, F. Semond, and S. Bouchoule |
| Appl. Phys. Lett. 95 (2009) 121102 - Papier régulier |
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| Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms |
| Reveret F, Disseix P, Leymarie J, Semond F et al. |
| Solid State Com. 150 (2009) 122 - Papier régulier |
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| Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers |
| M. Willander, O. Nur, Q. X. Zhao, L. L. Yang, M. Lorenz, B. Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al-Suleiman, A. El-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, H. S. Kwack, J. Gu |
| Nanotechnology 20 (2009) 332001 - Papier régulier |
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| Al and Ti/Al contacts on n-GaN |
| L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua |
| Vacuum 84 (2009) 228 - Article de conférence |
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| Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions |
| S. Roy, M. Portail, T. Chassagne, J. M. Chauveau, P. Vennéguès, M. Zielinski |
| Appl. Phys. Lett. 95 (2009) 081903 - Papier régulier |
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| Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers
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| Phys. Stat. Sol. C 6 (2009) 1424 - Article de conférence |
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| Perturbing GaN/AlN quantum dots with uniaxial stressors |
| Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
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| Phys. Stat. Sol. C 6 (2009) 1432 - Article de conférence |
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| Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures |
| A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev |
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| Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy. |
| P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf |
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| Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates. |
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| Optical investigations of bulk and multi-quantum well nitride-based microcavities |
| Reveret, F; Medard, F; Disseix, P, Semond, F et al. |
| Optical Materials 31 (2009) 505 - Article de conférence |
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| Recent ROB developments on wide bandgap based UV sensors |
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| EDP_EAS 37 (2009) 199 - Article de conférence |
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| Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces |
| O. Copie, V. Garcia, C. Bödefeld, C. Carrétéro, M. Bibes, G. Herranz, E. Jacquet, J.-L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffrès, and A. Barthélémy |
| Phys. Rev. Lett. 102 (2009) 216804-4 - Papier régulier |
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| Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet |
| J-L Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.-A. Robo, J.-P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.-Y. Duboz |
| EDP 37 (2009) 207 - Article de conférence |
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| Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells |
| F.Natali, Y.Cordier, J.Massies, S.Vezian, B.Damilano, M.Leroux |
| Phys. Rev. B 79 (2009) 035328 - Papier régulier |
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| Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
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| S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein |
| J. Stat. Mech. 1 (2009) P01046 - Papier régulier |
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| Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition |
| M. Marinova, T. Robert, S. Juillaguet, I. Tsiaoussis, N. Frangis, E. Polychroniadis, J. Camassel, T. Chassagne |
| Phys. Stat. Sol. A 206 (2009) 1924-1930 - Papier régulier |
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| Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates |
| Yvon Cordier, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski and Thierry Chassagne |
| Materials Science Forum 600-603 (2009) 1277-1280 - Article de conférence |
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| Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors |
| N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies |
| Phys. Stat. Sol. C 6 - S2 (2009) 715-718 - Article de conférence |
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| Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111) |
| Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M. P. Besland |
| Phys. Stat. Sol. C 6 - S2 (2009) 1016-1019 - Article de conférence |
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| AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001) |
| Y. Cordier, J.-C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond |
| Phys. Stat. Sol. C 6 - S2 (2009) 1020-1023 - Article de conférence |
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| Anomalous Hall Effect in Gd-Implanted Wurtzite AlxGa1-N-x/GaN High Electron Mobility Transistor Structures |
| F.Y Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck |
| Materials Research Society Symposium Proceedings 1111 (2009) 61-69 - Article de conférence |
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| Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells |
| Laurent, T.; Nouvel, P.; Torres, J.; Chusseau, L.; Palermo, C.; Varani, L.; Cordier, Y.; Faurie, J.-P.; Beaumont, B.; Starikov, E.; Shiktorov, P.; Gruzˇinskis, V |
| Journal of Physics : Conference Series 193 (2009) 012094 - Article de conférence |
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| Analysis of the C-V characteristic SiO2/GaN MOS capacitors |
| I Cortes, E Al-Alam, MP Besland, P Regreny, F Morancho, A Cazarré, Y Cordier, A Goullet and K Isoird |
| Proceedings 7th Spanish Conference on Electron Devices 7 (2009) 254-257 - Article de conférence |
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| Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns |
| Y. Cordier, F. Semond, J-C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary |
| Materials Science in Semiconductor Processing 12 (2009) 16-20 - Article de conférence |
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| Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-weells |
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| Proc. 29th Int. Conf. Physics of Seminconductors ICPS 1199 (2009) 191 - Article de conférence |
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| Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature |
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| J. Cryst. Growth 311 (2009) 2002-2005 - Article de conférence |
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| Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source |
| F.Natali, Y.Cordier, C. Chaix, P.Bouchaib |
| J. Cryst. Growth 311 (2009) 2029-2032 - Article de conférence |
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| Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures |
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| J. Vac. Sci. Technol. B 27 (2009) 1780 - Article de conférence |
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| Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires |
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| Nanotechnology 20 (2009) 305701 - Papier régulier |
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| The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) |
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| J. Appl. Phys. 105 (2009) 033701 - Papier régulier |
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| Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration |
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| Phys. Stat. Sol. A 206 (2009) 371-374 - Papier régulier |
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| AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first? |
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| Epitaxial aluminium nitride on patterned silicon |
| Moreno J, Frayssinet E, Semond F, et al. |
| Materials Science in Semicond. Processing 12 (2009) 31 - Article de conférence |
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| Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators |
| Marc Faucher, Bertrand Grimbert, Yvon Cordier, Nicolas Baron, Arnaud Wilk, Hacène Lahreche, Philippe Bove, Marc François, Pascal Tilmant, Thomas Gehin, Christiane Legrand, Matthieu Werquin, Lionel Buchaillot, Christophe Gaquière, and Didier Théron |
| Appl. Phys. Lett. 94 (2009) 233506 - Papier régulier |
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| 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
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| T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E.K. Polychroniadis and J. Camassel |
| Material Science Forum 615-617 (2009) 339-342 - Article de conférence |
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| High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors |
| L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel, Y. Cordier |
| Mat. Sci. Eng. B 165-1-2 (2009) 1-4 - Article de conférence |
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| Catalytic unzipping of carbon nanotubes to few-layer graphene sheets under
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| Izabela Janowska , Ovidiu Ersen , Timo Jacob, Philippe Vennéguès, Dominique Bégin,
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| Applied Catalysis A:General 371 (2009) 22-30 - Papier régulier |
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| GaN transistor characteristics at elevated temperatures |
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| "Substrates for III−Nitride−based Electroluminescent Diodes" |
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| LEDs for Lighting Applications Patrick Mottier (CEA, LETI), Editors ISTE Ltd (UK) (2009) 29-73 - Livres et chapitres de livres |
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| (Zn, Mg)O/ZnO based heterostructures grown by molecular beam epitaxy on sapphire: polar vs non-polar
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| J.-M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zúñiga-Pérez, and B. Vinter |
| Microelectronics Journal 40 (2009) 512 - Article de conférence - invité |
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| GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures |
| Sylvain Sergent, Jean-Christophe Moreno, Eric Frayssinet, Sébastien Chenot, Mathieu Leroux, and Fabrice Semond |
| Applied Physics Express 2 (2009) 051003 - Papier régulier |
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| Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities |
| F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J. C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux |
| Photonics and Nanostructures 7 (2009) 26 - Article de conférence |
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| Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption |
| F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet |
| Phys. Rev. B 79 (2009) 125302 - Papier régulier |
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| Comparison of GaN and ZnO epitaxial films for scintillator applications |
| H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, A. Dadgar, and A. Krost |
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| Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy |
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| Mat. Sci. Eng. B 165 (2009) 42 - Papier régulier |
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| Towards green lasing: ingredients for a green laser diode based on GaInN |
| A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter |
| Phys. Stat. Sol. (c) C6 (S2) (2009) 792 - Article de conférence |
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| Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations |
| P. D. C. King, T. D. Veal, A. Schleife, J. Zúñiga-Pérez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjosé, F. Bechstedt, and C. F. McConville |
| Phys. Rev. B 79 (2009) 205205 - Papier régulier |
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| UV Imaging Based on AlGaN Arrays |
| Jean-Yves Duboz, Julien Brault, Jean-Patrick Truffer, Jean-Alexandre Robot, Kristelle Robin, Jean Luc Reverchon |
| Phys. Stat. Sol. (c) S2 (2009) S611 - Article de conférence |
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| Anomalous photoresponse of GaN X-ray Schottky detectors |
| Jean-Yves Duboz, Bernard Beaumont, Jean-Luc Reverchon and Andreas D. Wieck |
| J. Appl. Phys. 105 (2009) 114512 - Papier régulier |
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| Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC |
| M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel |
| Materials Science Forum 615-617 (2009) 49 - Article de conférence |
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| Role of substrate misorientation in relaxation of 3C-SiC layers on silicon |
| M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier |
| Materials Science Forum 615-617 (2009) 169 - Article de conférence |
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| Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO |
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| Phys. Rev. B 79 (2009) 035203 - Papier régulier |
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| Optical and excitonic properties of ZnO films |
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| Optical Matérials 31 (2009) 532 - Article de conférence |
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| AlInN optical confinement layers for edge emitting group III-nitride laser structures |
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| Phys. Stat. Sol. (c) S2 (2009) 897 - Article de conférence |
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| GaN/Al0.5Ga0.5N quantum dots and quantum dashes |
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| Phys. Stat. Sol. (b) 246 (2009) 845-845 - Papier régulier |
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| Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy |
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| Mat. Sci. Eng. B 165 (2009) 9 - Papier régulier |
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| Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
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| Infrared detectors based on InGaAsN/GaAs intersubband transitions |
| Jean-Yves Duboz, Maxime Hugues, Benjamin Damilano, Alexandru Nedelcu, Philippe Bois,Nasrin Kheirodin, François H. Julien |
| Appl. Phys. Lett. 94 (2009) 022103 - Papier régulier |
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| Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds |
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| Nanotechnology 20 (2009) 065701 - Papier régulier |
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| Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates |
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| Development of thick GaN-on-silicon layers for rectifier applications |
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| EWMOVPE-XIII D.14 (2009) 343-346 - Article de conférence - invité |
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| Highly sensitive strained AlN on Si(111) resonators |
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| Sensors and Actuators A: Physical 150 (2008) 64-68 - Papier régulier |
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| Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics |
| S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang |
| J. Cryst. Growth 311 (2008) 2087-2090 - Article de conférence |
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| H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau |
| J. Cryst. Growth 311 (2008) 2091-2095 - Article de conférence |
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| Physics of semiconductors B893 (2007) 941-942 - Article de conférence |
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| From evidence of strong light-matter coupling to polariton emission in GaN microcavities |
| Sellers, IR; Semond, F; Zamfirescu, M, et al. |
| Phys. Stat. Sol. B 244 (2007) 1882-1886 - Article de conférence |
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| Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer |
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| Electron Scattering Spectroscopy by High Magnetic Field in Mid-Infrared Quantum Cascade Lasers
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| ICPS, AIP Conference Proceedings 893 (2007) 497-498 - Article de conférence |
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| Antiferromagnetic Interactions in Single Crystalline Zn1-xCoxO Thin Films |
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| Phys. Stat. Sol. (c) 4, Issue 1 (2007) 183-186 - Article de conférence |
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| Nanogoniometry with Scanning Force Microscopy: A Model Study of CdTe Thin Films |
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| Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers |
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| Formation and rupture of Schottky nanocontacts on ZnO nanocolumns |
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| High indium content AlInGaN films: growth, structure and optoelectronic properties |
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| Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission |
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| Phys. Stat. Sol. (a) 204, n°1 (2007) 282-289 - Article de conférence |
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| Energy levels and intersubband transitions in InGaAsN/AlGaAs quantum wells |
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| Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy |
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| Proc. Int. Workshop Nitride Based Nanostruct. (2007) 127 - Article de conférence |
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| Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells |
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| Phys. Rev. B 75 (2007) 045313 - Papier régulier |
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| X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy |
| C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé |
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| All-optical characterisation of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE grown GaN |
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| Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions |
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| Phys. Stat. Sol. (a) 204 (2007) 981 - Article de conférence |
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| Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates |
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| Trends in nitrogen doping for 3C-SiC films on silicon |
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| Materials Science Forum 556-557 (2007) 207 - Article de conférence |
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| In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy |
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| Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE |
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| Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M. |
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| Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations |
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| Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source |
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| Nanoscale determination of surface orientation and electrostatic properties of ZnO thin films |
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| Appl. Phys. A 88 (2007) 77 - Article de conférence |
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| Structural and morphological characterization of ZnO films grown on GaAs substrates by MOCVD |
| S. Agouram, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé |
| Appl. Phys. A 88 (2007) 83 - Article de conférence |
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| Energetically deep defect centers in vapor-phase grown zinc oxide |
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| Appl. Phys. A 88 (2007) 141 - Article de conférence |
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| Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates |
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| Phys. Stat. Sol. (c) 4, n°7 (2007) 2670-2673 - Article de conférence |
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| Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots |
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| Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots |
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| Monolithic white light emitting diodes with a broad emission spectrum |
| A. Dussaigne, J. Brault, B. Damilano, J. Massies |
| Phys. Stat. Sol. (c) 4, Issue 1 (2007) 57-60 - Article de conférence |
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| Ordered growth of tilted ZnO nanowires: morphological, structural and optical charcaterization |
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| Nanotechnology 18 (2007) 195303 - Papier régulier |
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| Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT |
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| (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer |
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| Polariton thermalization in GaN microcavities in the strong light-matter coupling regime |
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| InAs/AlAsSb based quantum cascade lasers |
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| Photoelectric properties of highly excited GaN-Fe epilayers grown by modulation- and continuous-doping techniques |
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| Fabrication of monocrystalline 3C-SiC resonators for MHz frequency applications |
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| IEEE TRANSACTIONS ON ELECTRON DEVICES 54, No. 11 (2007) 2843-2848 - Papier régulier |
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| AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination |
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| Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm |
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| Phys. Stat. Sol. (c) 3 (2006) 3979 - Article de conférence |
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| Phys. Stat. Sol. (c) 3 (2006) 3848 - Article de conférence |
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| MRS symposium 892 (2006) 485-490 - Article de conférence |
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| Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate |
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| Journal de Physique IV 132 (2006) 365-368 - Article de conférence |
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| V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès |
| Phys. Stat. Sol. (c) 3, No.6 (2006) 1548 - Article de conférence |
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| Phys. Stat. Sol. (c) 3/6 (2006) 1658-1661 - Article de conférence |
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| Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications |
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| Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion |
| A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos |
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| Phys. Stat. Sol. (b) 243(7) (2006) 1639 - Article de conférence |
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| An AlGaN Based Linear Array for UV Solar Blind Imaging from 240 nm to 280 nm |
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| Phys. Stat. Sol. (c) 3, N°6 (2006) 2325-2328 - Article de conférence |
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| Superlattices & Microstructures (40) (2006) 359-362 - Article de conférence |
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| Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator |
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| InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications |
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| Mater. Res. Soc. Symp. Proc. 891 (2006) 0891-EE03-29.1 - Article de conférence |
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| Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire |
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| Mater. Res. Soc. Symp. Proc. (2006) - Article de conférence |
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| Chem. Vap. Deposition 12 (2006) 549–556 - Papier régulier |
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| Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire |
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| Appl. Phys. Lett. 89 (2006) 243510 - Papier régulier |
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| Diodes électroluminescentes blanches pour l'éclairage |
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| Images de la Physique (2006) 86 - Livres et chapitres de livres |
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| Structural characterisation of Sb-based heterostructures by X-ray scattering methods |
| C. Renard, O. Durand, X. Marcadet, J. Massies, O. Parillaud |
| Applied Surface Science 253 (2006) 112 - Article de conférence |
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| Field-effect-modulated SAW devices on AlGaN/GaN heterostructures |
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| AlGaInN resonant-cavity LED devices studied by electro-modulated reflectance and carrier lifetime techniques |
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| Nucl Inst and MethodB 240 (2005) 265 - Article de conférence |
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| Phys. Stat. Sol. (c) 2, No. 7 (2005) 2195-2198 - Article de conférence |
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| Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells |
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| Superlattices & Microstructures 38 (2005) 455-463 - Article de conférence - invité |
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| High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy |
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| Phys. Stat. Sol. (c) 2, No. 7 (2005) 2187-2190 - Article de conférence |
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| 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing |
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| Proc. ESPC (2005) - Article de conférence |
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| Proc. SPIE Int. Soc. Opt. Eng. 5840 (2005) 781 - Article de conférence |
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| Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy |
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| IEEE Photon. Techno. Letters 17, Issue: 6 (2005) 1142-1144 - Papier régulier |
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| High temperature electrical investigations of (Al,Ga)N/GaN heterostructures - Hall sensor applications |
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| Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures |
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| Phys. Stat. Sol. (b) 241, Issue 12 (2004) 2779-2782 - Article de conférence |
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| (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy |
| B. Damilano, J. Barjon, S.W. Wan, J.-Y. Duboz, M. Leroux, M. Laügt and J. Massies |
| IEE Proc.-Optoelectron. 151, No. 5 (2004) - Article de conférence |
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| Spectroscopy of the electron states in self-organized GaN/AlN quantum dots |
| A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean |
| Phys. Stat. Sol. (c) 1, Issue 6 (2004) 1456-1460 - Article de conférence |
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| Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy |
| V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean |
| J. Cryst. Growth 262, Issues 1-4 (2004) 145-150 - Article de conférence |
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| Origin of power fluctuations in GaN resonant-cavity light-emitting diodes |
| B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, M.A. Poisson. |
| Optics Express 12 (2004) 736 - Papier régulier |
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| Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template |
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| Low frequency noise behavior in GaN HEMT's on silicon substrate |
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| Proc. SPIE 5470 (2004) 286-295 - Article de conférence |
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| Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC |
| A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos |
| Electrochem. Solid-State Lett. 7 (2004) F93 - Papier régulier |
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| Plastic relaxation through buried cracks in AlGaN/GaN heterostructures |
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| Eur. Phys. J. Appl. Phys. 257 (2004) 263-265 - Papier régulier |
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| Electronic properties of deep defects in n-type GaN |
| P.Muret, Ch.Ulzhöfer, J.Pernot, Y.Cordier, F.Semond, Ch.Gacquière, D.Théron |
| Superlattices & Microstructures 36 (2004) 435-443 - Article de conférence |
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| Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes |
| J. M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J. L. Sánchez-Rojas, and E. Calleja |
| Appl. Phys. Lett. 85 (2004) 40 - Papier régulier |
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| Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride |
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| Thermal characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and an pulsed I-V measurements |
| R. Aubry, J-C. Jacquet, C.Dua, H.Gérard, B. Dessertenne, M.-A. Di Forte-Poisson, Y. Cordier and S.L. Delage |
| Materials Science Forum (2004) - Article de conférence |
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| Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes |
| S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies |
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| From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001) |
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| Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-UV |
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| Metal organic vapour phase epitaxy of GaN and lateral overgrowth |
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| From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction |
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| Phys. Rev. B 69 (2004) 073303 - Papier régulier |
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| High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates |
| A.Minko, V.Hoël, S.Lepilliet, G.Dambrine, J-C.Dejaeger, Y.Cordier, F.Semond, F.Natali, J.Massies |
| IEEE Electron Device Letters 25, No.4 (2004) 167-169 - Papier régulier |
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| Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors |
| Mauro Mosca, Jean-Luc Reverchon,Franck Omnès, Jean-Yves Duboz |
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| Multilayer (Al,Ga)N structures for solar-blind detection |
| Mauro Mosca, Jean-Luc Reverchon,Nicolas Grandjean, Jean-Yves Duboz |
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| Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties |
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| High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD |
| Jean-Yves Duboz, Jean-Luc Reverchon, Mauro Mosca, Nicolas Grandjean, Franck Omnès, |
| Mater. Res. Soc. Symp. Proc. 798 (2004) 47-51 - Article de conférence |
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| Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls" |
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| Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors |
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| Performances of AlGaN/GaN HEMTs in Planar Technology |
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| Anisotropic propagation of surface acoustic waves on nitride layers |
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| Superlattices & Microstructures 36, Issues 4-6 (2004) 815-823 - Article de conférence |
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| Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs |
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| Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown Si (100) substrates |
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| Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature |
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| Mater. Res. Soc. Symp. Proc. 798 (2004) 613-18 - Article de conférence |
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| Symmetry aspects of exciton–exciton interactions and biexciton transitions in wurtzite semiconductor structures |
| P. Tronc, Yu. E. Kitaev, V. P. Smirnov, M. Jacobson, G. Neu |
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| Regular step formation on concave-shaped surfaces on 6H–SiC(0 0 0 1) |
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| Electrical characterisation of hole traps in n-type GaN |
| F. D. Auret, W. E. Meyer, L. Wu, M. Hayes, M. J. Legodi, B. Beaumont and P. Gibart |
| Phys. Stat. Sol. (a) 1–6 (2004) - Article de conférence |
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| Efficiency optimization of p-type doping in GaN:Mg layers grown by Molecular-Beam Epitaxy |
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| Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy |
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| Phys. Stat. Sol. (c) 1 (2004) 193 - Article de conférence |
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| Highly regular nanometer-sized hexagonal pipes in 6H-SiC |
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| About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy |
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| Superlattices & Microstructures 36 (2004) 659 - Article de conférence |
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| Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy |
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| Optical properties of edge emitting semiconductor laser diodes with coated Bragg mirror |
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| IEEE conference proceedings (2004) - Article de conférence |
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| Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects |
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| Proceedings of NATO conference (2003) - Article de conférence |
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| High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures |
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| Phys. Stat. Sol. (b) 235 (2003) 20 - Article de conférence |
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| Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks |
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| Engineering of an Insulating Buffer and Use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures |
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| Phys. Stat. Sol. (a) 195, No. 1 (2003) 93 - Article de conférence |
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| High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy |
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| Nitride Semiconductors, Handbook on Materials and Devices 13 (2003) - Livres et chapitres de livres |
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| Materials Chemistry and Physics 81 (2003) 273 - Article de conférence |
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| Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy |
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| Mater. Res. Soc. Symp. Proc. L5.6 (2003) - Article de conférence |
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| IEEE Microwave and Wireless Components Letters 13, n°3 (2003) 99-101 - Papier régulier |
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| Wide-bandgap semiconductor ultraviolet photodetectors (Topical review) |
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| Origins of GaN(0001) Surface Reconstructions |
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| Improved AlGaN/GaN High Electron Mobility Transistors using AlN interlayers |
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| Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments |
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| Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots |
| Ana Helman, Khalid Moumanis, Maria Tchernycheva, Alain Lusson, Francois Julien, Benjamin Damilano, Nicolas Grandjean, Jean Massies, Christophe Adelmann, Frederic Fossard, Daniel Le Si Dang, and Bruno Daudin |
| Mater. Res. Soc. Symp. Proc. 7 (2003) 169 - Article de conférence |
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| Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy |
| H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche |
| Appl. Phys. Lett. 83 (2003) 5139 - Papier régulier |
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| Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates |
| N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies |
| J. Appl. Phys 93(9) (2003) 5222-5226 - Papier régulier |
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| Solar blind AlGaN Metal-Semiconducteur-Metal Devices for High Performance Flame Detection |
| M. Mosca, J.L. Reverchon, N. Grandjean, F. Omnès, J.Y. Duboz, I. Ribet, M. Tauvy |
| Mater. Res. Soc. Symp. Proc. 764 (2003) C4-4-1 - Article de conférence |
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| Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction |
| Enriquez,-H.; D'angelo,-M.; Aristov,-V.-Yu.; Derycke,-V.; Soukiassian,-P.; Renaud,-G.; Barbier,-A.; Chiang,-S.; Semond,-F. |
| J. Vac. Sci. Technol. B 21(4) (2003) 1881-5 - Papier régulier |
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| Cubic SiC surface structure studied by X-ray diffraction |
| D'angelo,-M.; Enriquez,-H.; Aristov,-V.-Yu.; Soukiassian,-P.; Renaud,-G.; Barbier,-A.; Chiang,-S.; Semond,-F.; Di-Cioccio,-L.; Billion,-T. |
| Materials Science Forum 433-436 (2003) 571-4 - Article de conférence |
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| Failure analysis of structure laser by Electrostatic Force Microscopy |
| M.Azize, P.Girard, M.Teissier, A.Baranov and A.Joullie |
| Journal of Vaccum Science Technology B (2003) - Article de conférence |
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| Evidence of an impurity band at an n-GaN/sapphire interface |
| C. Mavroidis, J.J. Harris, R.B. Jackman, Z. Bougrioua, I. Moerman |
| Diamond and Related Materials 12, issues 3-7 (2003) 1127–1132 - Article de conférence |
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| Incorporation of Dielectric Layers into the Processing of III-Nitride Based Heterostructure Field Effect Transistors |
| D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bhir and J. Salzman |
| J. Electron. Mat. 32, 5 (2003) 355 - Papier régulier |
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| Microscopic description of radiative recombinations in InGaN/GaN quantum systems |
| A. Morel, P. Lefebvre, T Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies |
| Mater. Res. Soc. Symp. Proc. L5.5 (2003) - Article de conférence |
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| Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements |
| R. Aubry, J-C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M-A. Diforte-Poisson, A. Romann, S.L. Delage |
| Eur. Phys. J. Appl. Phys. 22(2) (2003) 77-82 - Papier régulier |
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| 10. Atomic structure determination of the Si-rich beta -SiC(001) 3*2 surface by grazing-incidence x-ray diffraction: a stress-driven reconstruction |
| D'angelo,-M.; Enriquez,-H.; Aristov,-V.-Yu.; Soukiassian,-P.; Renaud,-G.; Barbier,-A.; Noblet,-M.; Chiang,-S.; Semond,-F. |
| Phys. Rev. B 68(16) (2003) 165321-1-8 - Papier régulier |
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| RBS studies of AlGaN/AlN Bragg reflectors |
| L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie |
| Phys. Stat. Sol. (a) 195, No.3 (2003) 502-507 - Article de conférence |
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| Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector |
| D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies |
| Jpn. J. Appl. Phys 42, Part 2, No. 12B (2003) L1509 - Papier régulier |
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| Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation |
| T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
| Phys. Rev. B 68 (2003) 205301 - Papier régulier |
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| Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells |
| A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
| Physica E 17 (2003) 64 - Papier régulier |
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| Intraband spectroscopy of self-organized GaN/AlN quantum dots |
| A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang |
| Physica E 17 (2003) 60 - Papier régulier |
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| Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon |
| J.-Y. Duboz, N.-B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.-L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy |
| Jpn. J. Appl. Phys 42 (2003) 118 - Papier régulier |
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| Indium surface segregation in AlSb and GaSb |
| C. Renard, X. Marcadet, J. Massies, I. Prévot, R. Bisaro, P. Galtier |
| J. Cryst. Growth 259 (2003) 69 - Papier régulier |
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| GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters |
| Byrne,-D.; Natali,-F.; Semond,-F.; Grandjean,-N.; Damilano,-B.; Massies,-J. |
| Conference on Lasers and Electro-Optics Europe 03TH8666 (2003) 178 - Article de conférence |
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| Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111) |
| F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont |
| Appl. Phys. Lett. 82(9) (2003) 1386 - Papier régulier |
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| Optical properties of GaN/AlN quantum boxes under high photo-excitation |
| S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
| Phys. Stat. Sol. (c) (2003) - Article de conférence |
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| Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities |
| N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies |
| Phys. Stat. Sol. (a) 195, No.3 (2003) 543-550 - Article de conférence |
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| GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 mm |
| E. Tournié, M.A. Pinault, M. Laügt, J.M. Chauveau, A. Trampert, K.H. Ploog |
| Appl. Phys. Lett. 82 (2003) 1845 - Papier régulier |
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| Annealing effects on the crystal structure of GaInNAs quantum wells with large in and N content grown by molecular beam epitaxy |
| A. Hierro, J.M. Ulloa, J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, A. Guzman, J.L. Sanchez-Rojas, E. Calleja |
| J. Appl. Phys 94 (2003) 2319 - Papier régulier |
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| Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE |
| J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, K. Du, K.H. Ploog |
| J. Cryst. Growth 251 (2003) 383 - Papier régulier |
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| Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells |
| J.M. Chauveau, A. Trampert, K.H. Ploog, M.A. Pinault, E. Tournié |
| Appl. Phys. Lett. 82 (2003) 3451 - Papier régulier |
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| Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys |
| O. Pages, T. Tite, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo |
| Appl. Phys. Lett. 82 (2003) 2808 - Papier régulier |
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| Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures |
| I. Prevot, B. Vinter, X. Marcadet, J. Massies |
| Appl. Phys. Lett. 81 (2002) 3362 - Papier régulier |
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| 200 Mbit/s Data Transmission through 100 Meters of Plastic Optical Fibre with Nitride LEDs |
| M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont, and K. Panzer |
| Electron. Lett. 38 (2002) 1457 - Papier régulier |
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| 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire |
| F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie |
| Phys. Stat. Sol. (b) 229 (2002) 931 - Article de conférence |
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| Reliability of Schottky contacts on AlGaN |
| E. Monroy, F. Calle, T. Palacios, J. Sanchez-Osorio, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana |
| Phys. Stat. Sol. (a) 188 (2002) 367 - … |
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| Modelling and spectroscopy of GaN microcavities |
| N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies |
| Phys. Stat. Sol. (a) 190 (2002) 187 - Article de conférence |
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| Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes |
| S.Kaliakos, X.B.Zhang, T.Talierco, P.Lefebvre, B.Gil, N.Grandjean, B.Damilano, J.Massies |
| Appl. Phys. Lett. 80 (2002) 428 - Papier régulier |
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| Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures |
| W. Knap, E. Borovitskaya, M.S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P.Lorenzini, N.Grandjean, C.Skierbiszewsk, P. Prystawko, M. Leszczynski, I. Grzegory |
| Appl. Phys. Lett. 80 (2002) 1228 - Papier régulier |
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| Assessment of GaN metal-semiconductor-metal for high-energy ultraviolet photodetection |
| E.Monroy, T.Palacios, O.Hainaut, F.Omnès, F.Calle, J.F.Hochedez |
| Appl. Phys. Lett. 80 (2002) 1902 - Papier régulier |
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| Raman scattering in GaN pillar arrays |
| F. Demangeot, J. Gleize, J. Frandon, M.A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, N. Grandjean |
| J. Appl. Phys 91 (2002) 2866 - Papier régulier |
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| High responsivity submicron metal-semiconductor-metal ultraviolet detectors |
| T. Palacios, E. Monroy, F. Calle, F. Omnès |
| Appl. Phys. Lett. 81 (2002) 3198 - Papier régulier |
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| Atomic force microscopy study of the polymer growth in a polymer stabilized liquid crystal |
| H. Guillard, P. Sixou, O. Tottereau |
| Polym. Adv. Technol. 13 (2002) 491 - … |
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| Vibrational evidence for percolative effect in Zn1-xBexSe/GaAs |
| O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie |
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| Minority Carrier Diffusion Lengths in silicon doped gallium nitride thin films measured by electron beam induced current |
| C. Grazzi, M. Albrecht, H.P. Strunk, Z. Bougrioua, I. Moerman |
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| Silicon effect on GaN surface morphology |
| Z. Benzarti, I. Halidou, O. Tottereau, T. Boufaden, B. El Jani |
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| Photoluminescence of GaN microcrystallites prepared by a new solvothermal process. |
| C. Collado, G. Goglio, G. .Demazeau, A.S. Barriere, L. Hirsch, M. Leroux |
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| Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector |
| L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies |
| J. Appl. Phys 91 (2002) 6095 - Papier régulier |
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| Sub-micron technology in group-III nitrides : application to electronic devices |
| T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnès, Z.Bougrioua, E. Muñoz |
| Proc. 11th Europ.Heterostructure Technology Work. (2002) - … |
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| Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes |
| S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies |
| Phys. Stat. Sol. (a) 139 (2002) - … |
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| Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers |
| C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie |
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| Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation |
| S.P. Lepkowski, T. Suski, P. Perlin, V.Yu Ivanov, M. Godlewski, N Grandjean, J. Massies |
| J. Appl. Phys 91 (2002) 9622 - Papier régulier |
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| Full Si wafer conversion into bulk 3C-SiC |
| A. Leycuras, O. Tottereau, P. Vicente, L. Falkovsky, P. Girard, J. Camassel |
| Materials Science Forum 389-393 (2002) 147 - … |
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| Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN |
| P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart |
| Mat. Sci. Eng. B 93 (2002) 224 - Article de conférence |
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| AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances |
| Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage |
| Phys. Stat. Sol. (a) N°1 (2002) 61 - Article de conférence |
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| AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE |
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| Electron. Lett. 38(2) (2002) 91 - Papier régulier |
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| On the effect of high Mg doping on the polarity of GaN |
| P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean |
| Institute of Physics Conferences Series n°169 (2002) 307 - Article de conférence |
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| Optical characterization of AlxGa1-xN alloys (x<0.7) grown on sapphire or silicon. |
| M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart |
| Phys. Stat. Sol. (b) 234 (2002) 887 - … |
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| AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments |
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| Structural defects and relation with optoelectronic properties in highly Mg-doped GaN. |
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| Phys. Stat. Sol. (a) 192 (2002) 394 - Article de conférence |
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| Growth of gallium nitride epitaxial layers by metal organics vapour phase epitaxy and applications |
| B. Beaumont, F. Omnès, P. De Mierry, P. Gibart |
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| Structure and morphology of concave-shaped surfaces on 6H-SiC(0001) after H2 etching |
| F. Dulot, L. Mansour, A. Leycuras, W. Wulfhekel, D. Sander, F. Arnaud D'avitaya, M. Hanbucken |
| Applied Surface Science 187 (2002) 219 - … |
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| Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andres |
| Phys. Stat. Sol. (a) 188 (2002) 307 - … |
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| Displaced substitutional phosphorus acceptors in zinc selenide |
| D. Wolverson, J.J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, K. Ohkawa, D. Hommel, E. Tournié, J.P. Faurie |
| Phys. Stat. Sol. (b) 229 (2002) 257 - … |
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| Self compensation of the phosphorus acceptor in ZnSe |
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| Phys. Stat. Sol. (b) 229 (2002) 251 - … |
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| Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN |
| H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart |
| Appl. Phys. Lett. 75 (2002) 2587 - Papier régulier |
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| Donor spectroscopy in wurtzite GaN heterostructures |
| G. Neu, M. Teisseire-Doninelli, C. Morhain |
| Proc. of the 26th ICPS, Inst. Phys. Conf. Series 171 (2002) 19 - Article de conférence |
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| Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers |
| C.Mavroidis, J.J.Harris, R.B.Jackman, I.Harrison, N.J. Ansell, Z. Bougrioua, I.Moerman. |
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| Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001) |
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| AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111) |
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| Jpn. J. Appl. Phys 41(10B) (2002) L1140-2 - Papier régulier |
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| J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies |
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| In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy |
| H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle |
| Appl. Phys. Lett. 80 (2002) 174 - Papier régulier |
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| Evidence for alloy formation in dilute GaAs:N compounds |
| E. Tournié, G. Neu, M. Teisseire, M.-A. Pinault, M. Laügt |
| Proc. of the 26th ICPS, Inst. Phys. Conf. Series 171 (2002) 27 - Article de conférence |
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| Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors |
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| Recent progress of the BOLD investigation towards UV detectors for the ESA Solar Orbiter |
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| Diamond and Related Materials 11 (2002) 427 - … |
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| Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures |
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| The GaN yellow luminescence center observed using optoelectronic modulation spectroscopy |
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| Electron. Lett. 38 (2002) 750 - Papier régulier |
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| J. Appl. Phys 92(1) (2002) 223 - Papier régulier |
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| In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes |
| K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B.Damilano, J.Massies |
| Mat. Sci. Eng. B 93 (2002) 150 - … |
| |
| Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells |
| A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F.Semond, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 190 (2002) 87 - Article de conférence |
| |
| Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells |
| J.Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 190 (2002) 135 - … |
| |
| The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes |
| S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J.Massies |
| Phys. Stat. Sol. (a) 190 (2002) 149 - … |
| |
| Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells |
| J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N.Grandjean, J.Massies |
| Phys. Stat. Sol. (a) 190 (2002) 155 - Article de conférence |
| |
| Properties of a hole trap in n-type hexagonal GaN |
| P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart |
| J. Appl. Phys 91(5) (2002) 2998 - Papier régulier |
| |
| Free carrier mobility in AlGaN/GaN quantum wells |
| J.L. Farvacque, Z. Bougrioua, F. Carosella, I. Moerman |
| J. Phys.: Condens. Matter 14 (2002) 13319 - Papier régulier |
| |
| Relation between microstructure and 2DEG properties in AlGaN/GaN structures |
| B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, I. Moerman |
| Phys. Stat. Sol. (b) 234 N°3 (2002) 830 - … |
| |
| Influence of surface treatments on DC performance of GaN-based HFETs |
| T.D.Mistele, T.Rotter, Z.Bougrioua, M.Marso, H.Roll, H.Klausing, F.Fedler, O.K. Semchinova, J.Aderhold, I.Moerman, J.Graul |
| Phys. Stat. Sol. (a) 194 N°2 (2002) 452 - … |
| |
| Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate |
| S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy |
| Electron. Lett. 38 N°8 (2002) 389 - Papier régulier |
| |
| Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N |
| E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F.J. Sanchez, M.T. Montojo, M.Eickhoff, F.Omnès, Z.Bougrioua, I. Moerman |
| Semicond. Sci. Tech. 17,N°9 (2002) L47 - Papier régulier |
| |
| Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction |
| P.A. Shields, R.J. Nicholas, K.Takashina, N. Grandjean, J. Massies |
| Phys. Rev. B 65 (2002) 195320 - Papier régulier |
| |
| Impact of the defects on the electrical and optical properties of AlGaN ultraviolet detectors |
| M. Hanzaz, A. Bouhdada, P. Gibart, F. Omnès |
| J. Appl. Phys 92(1) (2002) 13 - Papier régulier |
| |
| CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia |
| T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
| Sol. Stat. Comm. 117 (2001) 445 - Papier régulier |
| |
| Silicon nitride passivation effects on GaN MESFET |
| C. Gaquiere, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, J.C. De Jaeger, F. Omnès |
| Proceedings WOCSDICE (2001) VIII-11 - … |
| |
| (Al,Ga)N ultraviolet detectors on sapphire and Si substrates |
| E. Muñoz, E. Monroy, J.L. Pau, F. Calle, M.A. Sanchez, E. Calleja, F. Omnès, B. Beaumont, P. Gibart |
| Proceedings WOCSDICE (2001) XV-5 - … |
| |
| Raman study of ZnxBe1-xSe solid solutions |
| O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, O. Gorochov, C. Chauvet, E. Tournié, J.P. Faurie |
| Optical Matérials 17(1-2) (2001) 323 - … |
| |
| 2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE" |
| Z. Bougrioua, J.L. Farvaque, I. Moerman, F. Carosella |
| Phys. Stat. Sol. (b) 228 (2001) 625 - … |
| |
| Growth of GaN on (111) Si : a route towards self-supported GaN |
| H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart |
| J. Cryst. Growth 231 (2001) 329 - … |
| |
| Dielectric microcavity in GaN/Si |
| J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean |
| Phys. Stat. Sol. (a) 183 (2001) 35 - … |
| |
| Diamond UV detectors for future solar physics missions |
| J.F. Hochedez, P. Bergonzo, M.C. Castex, P. Dhez, O. Hainaut, M. Sacchi, J. Alvarez, H. Boyer, A. Deneuville, P. Gibart, B. Guizard, J.P. Kleider, P. Lemaire, C. Mer, E. Monroy, E. Muñoz, P. Muret, F. Omnès, J.L. Pau, V. Ralchenko, D. Tromson, E. Verwicht |
| Diamond and Related Materials 10(3-7) (2001) 673 - … |
| |
| Zn(MgBe)Se ultraviolet photodetectors |
| F. Vigué, J.P. Faurie |
| J. Electron. Mat. 30 (2001) 662 - … |
| |
| Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire |
| F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie |
| J. Appl. Phys 90 (2001) 5115 - Papier régulier |
| |
| Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields |
| M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 183 (2001) 61 - … |
| |
| Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells |
| D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 183 (2001) 129 - … |
| |
| Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy |
| L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 183 (2001) 139 - … |
| |
| Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures |
| J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Daudin, N. Grandjean |
| Phys. Stat. Sol. (a) 183 (2001) 157 - … |
| |
| High quality p+-n+ GaAs tunnel junction diode grown by atmospheric pressure MOVPE |
| L. Beji, B. El Jani, P. Gibart |
| Phys. Stat. Sol. (a) 183 (2001) 273 - … |
| |
| Strain state in GaN epilayers from optical experiments |
| E. Deleporte, C. Guenaud, M. Voos, B. Beaumont, P. Gibart |
| J. Appl. Phys 89 (2001) 1116 - Papier régulier |
| |
| Application and performance of GaN based UV detectors |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart |
| Phys. Stat. Sol. (a) 185(1) (2001) 91 - … |
| |
| Optical properties of self-assembled InGaN/GaN quantum dots |
| T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies |
| Mat. Sci. Eng. B 82 (2001) 22 - … |
| |
| Modeling of absorption and emission spectra of InGaN layers grown by MBE |
| L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies |
| Mat. Sci. Eng. B 82 (2001) 71 - … |
| |
| Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy |
| P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart |
| Mat. Sci. Eng. B 82 (2001) 91 - … |
| |
| On carrier localization in GaInNAs/GaAs quantum well heterostructures |
| M.A. Pinault, E. Tournié |
| Appl. Phys. Lett. 78(11) (2001) 1562 - Papier régulier |
| |
| Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : spectroscopic characterization and dislocation contrasts |
| S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart |
| J. Appl. Phys 89 (2001) 3736 - Papier régulier |
| |
| Stress control in GaN grown on silicon(111) by MOPVE |
| E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart |
| Appl. Phys. Lett. 79 (2001) 3220 - Papier régulier |
| |
| From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization |
| M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies |
| Materials Science Forum 353-356 (2001) 795 - … |
| |
| Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultra-violet photodetection |
| F. Vigué, E. Tournié, J.P. Faurie |
| IEEE J. Quant. Electr. 37(9) (2001) 1146 - Papier régulier |
| |
| Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111) |
| F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson |
| Phys. Stat. Sol. (a) 183 (2001) 163 - … |
| |
| Surface morphology of GaN grown by molecular beam epitaxy |
| S. Vézian, J. Massies, F. Semond, N. Grandjean |
| Mat. Sci. Eng. B 82 (2001) 56 - … |
| |
| Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers |
| H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart |
| Mat. Sci. Eng. B 82 (2001) 163 - Article de conférence |
| |
| InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible qpectrum |
| B. Damilano, N. Grandjean, J. Massies |
| Mat. Sci. Eng. B 82 (2001) 224 - … |
| |
| Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE |
| S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
| Mat. Sci. Eng. B 82 (2001) 256 - … |
| |
| High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy |
| F. Semond, P. Lorenzini, N. Grandjean, J. Massies |
| Appl. Phys. Lett. 82 (2001) 335 - Papier régulier |
| |
| Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors. |
| G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet |
| Physica B 302-303 (2001) 39 - … |
| |
| Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes |
| F. Vigué, E. Tournié, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz |
| Appl. Phys. Lett. 78(11) (2001) 4190 - Papier régulier |
| |
| Wide band-gap ZnMgBeSe alloys grown onto GaAs by molecular-beam epitaxy |
| E. Tournié, F. Vigué, M. Laügt, J.P. Faurie |
| J. Cryst. Growth 223 (2001) 461 - … |
| |
| Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates |
| F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie |
| Appl. Phys. Lett. 79 (2001) 194 - Papier régulier |
| |
| Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy |
| E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart |
| Jpn. J. Appl. Phys 40 (2001) L738 - … |
| |
| Influence of alloy stability on the photoluminescence properties of GaAs//GaAs quantum wells grown by molecular-beam epitaxy |
| M.A. Pinault, E. Tournié |
| Appl. Phys. Lett. 79 (2001) 3404 - Papier régulier |
| |
| GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy |
| N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
| Semicond. Sci. Tech. 16 (2001) 358 - Papier régulier |
| |
| InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties |
| B. Damilano, N. Grandjean, S. Vézian, J. Massies |
| J. Cryst. Growth 227/228 (2001) 466 - … |
| |
| Epitaxial Lateral overgrowth of GaN |
| B. Beaumont, P. Vennéguès, P. Gibart |
| Phys. Stat. Sol. (b) 227 (2001) 1-43 - Papier régulier |
| |
| Group-III nitride quantum heterostructures grown by molecular beam epitaxy |
| N. Grandjean, B. Damilano, J. Massies |
| J. Phys.: Condens. Matter 13 (2001) 6945 - Papier régulier |
| |
| Crack-free thick GaN layers on silicon(111) by MOVPE |
| E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart |
| Phys. Stat. Sol. (a) 188 (2001) 531 - Article de conférence |
| |
| Epitaxial Lateral Overgrowth of GaN on Silicon (111) |
| E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart |
| Phys. Stat. Sol. (a) 188 (2001) 733 - Article de conférence |
| |
| Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE |
| H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle |
| Phys. Stat. Sol. (a) 188 (2001) 899 - Article de conférence |
| |
| Donor and donor bound-exciton spectroscopy in wurtzite GaN heterostructures. |
| M. Teisseire, G. Neu, C. Morhain |
| Phys. Stat. Sol. (b) 228 (2001) 501 - … |
| |
| Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices |
| F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras |
| Ann. Chim. Sci. Mater. 26 (2001) 177 - Article de conférence |
| |
| Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells |
| M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
| Mat. Sci. Eng. B 82 (2001) 140 - … |
| |
| Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes |
| M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (b) 228 (2001) 129 - … |
| |
| Excitonic properties of ZnS quantum wells |
| B. Urbaszek, C.M. Townsley, X. Tang, C. Morhain, A. Balocchi, K.A. Prior, R.J. Nicholas, B.C. Cavenett |
| Phys. Rev. B 64(15) (2001) 155321 - Papier régulier |
| |
| Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe |
| J.J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel,E. Tournié, J.P. Faurie |
| Phys. Rev. B 64 (2001) 205-206, 1 - Papier régulier |
| |
| Vibrational evidence for percolative effect in ZnBeSe |
| O. Pages, M. Aijoun, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie |
| Phys. Rev. B 65 (2001) 035213 - Papier régulier |
| |
| Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure |
| A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux |
| Phys. Rev. B 89 (2001) 3775 - Papier régulier |
| |
| Nuclear microprobe analysis of GaN bases light emitting diodes |
| L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz |
| Phys. Stat. Sol. (a) 188 (2001) 171 - … |
| |
| High performance solar blind detectors based on AlGaN grown by MBE on Si |
| J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 188 (2001) 325 - … |
| |
| Micro-Raman study of wurtzite AlN layers grown on Si(111). |
| J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, D. Semond, J. Massies |
| Phys. Stat. Sol. (a) 188 (2001) 511 - … |
| |
| Potentialities of GaN-based microcanivities grown on silicon substrates |
| N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson |
| Phys. Stat. Sol. (a) 188 (2001) 519 - … |
| |
| Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells |
| P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 188 (2001) 839 - … |
| |
| Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect |
| M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies |
| Phys. Rev. B 64 (2001) 121304 - Papier régulier |
| |
| Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect |
| P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
| Phys. Stat. Sol. (b) 228 (2001) 65 - … |
| |
| Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers |
| C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua, I. Moerman |
| Phys. Stat. Sol. (b) 228 (2001) 579 - … |
| |
| Phonon-assisted optical transitions in GaN with impurities and defects |
| P. Tronc, Yu. E. Kitaev, G. Wang, M.F. Limonov, G. Neu |
| Physica B 302-303 (2001) 291 - … |
| |
| Raman mapping of epitaxial lateral overgrown GaN : stress at the coalescence boundary |
| M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart |
| J. Appl. Phys 90 (2001) 3656 - Papier régulier |
| |
| High quality AlxGa1-xN(0.15 £ x £ 0.45)/GaN distributed Bragg reflectors grown by MBE for resonant cavity LEDs |
| S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog |
| Semicond. Sci. Tech. 16 (2001) 913 - Papier régulier |
| |
| Heterostructure field effect transistor types with novel gate dielectrics |
| D. Mistele, T. Rotter, Z. Bougrioua, K.S. Rover, F. Fedler, H. Klausing, J. Stemmer, O.K. Semchinova, J. Aderhold, J. Graul |
| Phys. Stat. Sol. (a) 188, N°1 (2001) 225 - … |
| |
| Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy |
| H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche |
| Phys. Stat. Sol. (a) 188 (2001) 537 - Article de conférence |
| |
| Core structure of dislocations in GaN revealed by transmission electron microscopy |
| T. Remmele, M. Albrecht, H.P. Strunk, A.T. Blumenau, M.I. Heggie, J. Elsner. T. Frauenheim, H.P.D. Schenk, and P. Gibart |
| Proc. Royal Microsc. Soc. Conf. (2001) 323-326 - Article de conférence |
| |
| High temperature nitride sources for plastic optical fibre data buses |
| B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi |
| Proc. Tenth Int’l Plastic Optic Fibres Conf. 10 (2001) 81-87 - Article de conférence |
| |
| Photoconductance measurements and Stokes shift in InGaN alloys |
| J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies |
| Mat. Sci. Eng. B 82 (2001) 197 - … |
| |
| Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells |
| B. Damilano, N. Grandjean, C. Pernot, J. Massies |
| Jpn. J. Appl. Phys 40 (2001) L918 - … |
| |
| Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications |
| Semond, F; Cordier, Y; Grandjean, N, et al. |
| Phys. Stat. Sol. (a) 188 (2) (2001) 501-510 - Article de conférence - invité |
| |
| Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields |
| D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 188 (2001) 851 - … |
| |
| Characterization of electron-irradiated n-GaN |
| S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, P. Gibart |
| Appl. Phys. Lett. 78(11) (2001) 1538 - Papier régulier |
| |
| Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition |
| P. Ruterana, G. De Saint Jores, M. Laügt, F. Omnès, E. Bellet-Amalric |
| Appl. Phys. Lett. 78(3) (2001) 344 - Papier régulier |
| |
| High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy |
| P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett. 78 (2001) 1252 - Papier régulier |
| |
| Guided elastic waves in GaN on sapphire |
| S. Camou, Th. Pastureaud, H.P.D. Schenk, S. Ballandras, and V. Laude |
| Electron. Lett. 37 (2001) 1053 - Papier régulier |
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| Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures |
| P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
| Phys. Rev. B 64 (2001) 115319 - Papier régulier |
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| Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes |
| P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett. 78 (2001) 1538 - Papier régulier |
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| New form of ordering in AlGaN |
| P. Ruterana, G. De Saint-Jores, F. Omnès |
| Mat. Sci. Eng. B 82 (2001) 203 - … |
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| In-situ etching at InGaAs/GaAs quantum well interfaces |
| E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia |
| J. Cryst. Growth 222 (2001) 471 - … |
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| Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots |
| P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (b) 224 (2001) 53 - … |
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| Direct signature of strained GaN quantum dots by Raman scattering |
| J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett. 79 (2001) 686 - Papier régulier |
| |
| Quantum beats of free and bound excitons in GaN |
| K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kkuwata-Gonokami, B. Beaumont, P. Gibart |
| Appl. Phys. Lett. 79 (2001) 1097 - Papier régulier |
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| Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells |
| S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies |
| Appl. Phys. Lett. 79 (2001) 1483 - Papier régulier |
| |
| Impact ionization of excitons in an electric field in GaN |
| D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart |
| J. Phys.: Condens. Matter 13 (2001) 7043 - Papier régulier |
| |
| III nitrides and UV detection |
| E. Muñoz, E. Monroy, J.L. Pau, F. Calle, F. Omnès, P. Gibart |
| J. Phys.: Condens. Matter 13(32) (2001) 7115 - Papier régulier |
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| High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE |
| S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog |
| Appl. Phys. Lett. 79 (2001) 2136 - Papier régulier |
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| Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy |
| P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies |
| J. Microscopy 202 (2001) 212 - … |
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| Magneto-photoluminescence of AlGaN/GaN quantum wells |
| P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies |
| J. Cryst. Growth 230 (3-4) (2001) 487 - … |
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| Free-carrier effects in gallium n itride epilayers : valence-band dispersion |
| P.A. Shields, R.J. Nicholas, F.M. Peeters, B. Beaumont, P. Gibart |
| Phys. Rev. B 64 (2001) 081203 - Papier régulier |
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| Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies |
| P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies |
| Phys. Rev. B 63 (2001) 245319 - Papier régulier |
| |
| AlGaN-based UV photodetectors |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart |
| J. Cryst. Growth 230 (3-4) (2001) 537 - … |
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| Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : time evolution with low energy electron beam |
| S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart, J.D. Ganiere, K. Leifer |
| J. Appl. Phys 89 (2001) 7966 - Papier régulier |
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| Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN |
| A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies |
| J. Appl. Phys 89 (2001) 1070 - Papier régulier |
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| Deuterium diffusion in Mg-doped GaN layers grown by MOVPE |
| P. Theys, Z. Teukam, F. Jomard, P. De Mierry, A.Y. Polyakov, M. Barbe |
| Semicond. Sci. Tech. 16 (2001) L53 - Papier régulier |
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| Finite element analysis of epitaxial lateral overgrown GaN : voids at the coalescence boundary |
| M. Benyoucef, M. Kuball, G. Hill, M. Wisnom, B. Beaumont, P. Gibart |
| Appl. Phys. Lett. 79 (2001) 4127 - Papier régulier |
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| Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC |
| P. Vennéguès, H. Lahrèche |
| Appl. Phys. Lett. 77 (2000) 4310 - Papier régulier |
| |
| GaN and InGaN quantum dots grown by MBE : from UV to red light emission |
| N. Grandjean, B. Damilano, J. Massies |
| Proc. of Int. Workshop on Nitride Semiconductors (2000) 1002 - … |
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| Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy |
| E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau |
| Appl. Phys. Lett. 77 (2000) 2189 - Papier régulier |
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| ZnSe-based Schottky barrier photodetectors |
| F. Vigué, E. Tournié, J.P. Faurie |
| Electron. Lett. 36(25) (2000) 352 - Papier régulier |
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| High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-ultraviolet spectral range |
| F. Vigue, P. De Mierry, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz |
| Electron. Lett. 36 (2000) 826 - Papier régulier |
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| Green electroluminescent (Ga,InAl)N LEDs grown on Si(111) |
| S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux |
| Electron. Lett. 36(20) (2000) 1728 - Papier régulier |
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| Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate. |
| N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht |
| J. Appl. Phys 88 (2000) 183 - Papier régulier |
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| High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO |
| H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart |
| Diamond and Related Materials 9 (2000) 452 - … |
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| Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation |
| H.P.D. Schenk, M. Leroux, and P. De Mierry |
| J. Appl. Phys 88 (2000) 1525 - Papier régulier |
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| Growth of CVD thin films and thick LPE 3C-SiC in a specially designed reactor |
| A. Leycuras |
| Materials Science Forum 338-342 (2000) 241 - … |
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| MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization |
| S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
| Thin Solid Films 380 (2000) 195 - … |
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| AlGaN based structures on sapphire for visible blind Schottky barrier UV photodetectors : towards high performance device applications |
| F. Omnès, E. Monroy, B. Beaumont, F. Calle, E. Muñoz, P. Gibart |
| Proc. SPIE 3948 (2000) 234 - … |
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| Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN |
| G. Neu, M. Teisseire, N. Grandjean, H. Lahrèche, B. Beaumont, I. Grzegory, S. Porowski, P. Tronc |
| Proc. Int. Conf. on the Physics of Semiconductors (2000) - … |
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| AlxGa1-xN-based UV photodetectors and waveguides |
| F. Omnès, E. Monroy, B. Beaumont, E. Doghèche, F. Calle, E. Muñoz, P. Gibart |
| Proc. of Compound Semiconductor Power Transistors 2000-1 (2000) 205 - … |
| |
| Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films |
| M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai |
| Appl. Phys. Lett. 77 (2000) 2115 - Papier régulier |
| |
| Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties |
| C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie |
| Journal Electron. Mater. 29(6) (2000) 883 - … |
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| AlxGa1-xN based UV visible –blind photodetector applications |
| F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart |
| Opto-Electronics Review 8(1) (2000) 43 - … |
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| Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers |
| E. Tournié, G. Neu, M. Teisseire, J.P. Faurie, H. Pelletier, B. Theys |
| Phys. Rev. B 62(19) (2000) 12868 - Papier régulier |
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| Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy |
| B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie |
| Phys. Stat. Sol. (a) 180 (2000) 363 - … |
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| Comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN |
| B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahrèche, F. Omnès |
| J. Electron. Mat. 29 (2000) 603 - … |
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| Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum |
| A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire |
| J. Cryst. Growth 209 (2000) 435 - … |
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| Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy |
| H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart |
| J. Appl. Phys 87 (2000) 577 - Papier régulier |
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| Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods |
| P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart |
| J. Appl. Phys 87(12) (2000) 4175 - Papier régulier |
| |
| Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots |
| N. Grandjean, B. Damilano, J. Massies S. Dalmasso |
| Sol. Stat. Comm. 113 (2000) 495 - Papier régulier |
| |
| GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range |
| B. Damilano, N. Grandjean, J. Massies, F. Semond |
| Applied Surface Science 164 (2000) 241 - … |
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| Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001) |
| C. Chauvet, E. Tournié, J.P. Faurie |
| J. Cryst. Growth 214/215 (2000) 95 - … |
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| ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range |
| F. Vigué, A. Bouille, E. Tournié, J.P. Faurie |
| Phys. Stat. Sol. (a) 181(1) (2000) 301 - … |
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| ZnSe-based heterostructures for blue-green lasers. |
| J.P. Faurie, E. Tournié |
| CR. Acad. Sci. Paris 1, série IV (2000) 23 - … |
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| Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers |
| G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko |
| Appl. Phys. Lett. 77 (2000) 1348 - Papier régulier |
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| Nature of the bandgap of Zn1-xBexSe alloys, |
| C. Chauvet, E. Tournié, J.P. Faurie |
| Phys. Rev. B 61 (2000) 5332 - Papier régulier |
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| In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) |
| S. Vézian, J Massies, F. Semond, N. Grandjean P. Vennéguès |
| Phys. Rev. B 61 (2000) 7618 - Papier régulier |
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| Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular- beam epitaxy |
| G. Neu, E. Tournié, C. Morhain, M. Teisseire, J.P. Faurie |
| Phys. Rev. B 61 (2000) 15789 - Papier régulier |
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| Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range |
| F. Vigué, E. Tournié, J.P. Faurie |
| Appl. Phys. Lett. 76 (2000) 242 - Papier régulier |
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| Growth of gallium nitride epitaxial layers and applications |
| B. Beaumont, P. Gibart, N. Grandjean, J. Massies |
| C.R. Acad. Sci. Paris 1, série IV (2000) 35 - … |
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| Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN |
| P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart |
| Appl. Phys. Lett. 77 (2000) 880 - Papier régulier |
| |
| InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K |
| B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie |
| Appl. Phys. Lett. 77 (2000) 1268 - Papier régulier |
| |
| Hydrogen/deuterium : a probe to investigate carrier-compensation in ZnSe:N |
| E. Tournié, H. Pelletier, G. Neu, B. Theys, A. Lusson, M. Teisseire, C. Chauvet, J.P. Faurie |
| J. Cryst. Growth 214/215 (2000) 507 - … |
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| High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates |
| W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski |
| Mater. Res. Soc. Symp. Proc. 639 (2000) G7.3 - … |
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| Réalisation de structures photoniques avancées |
| D. Peyrade, F. Carcenac, L. Manin, V. Thierry-Mieg, N. Grandjean, D. Coquillat, R. Legros, Y. Chen |
| J. Phys. IV France 10 (2000) 8-125 - … |
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| Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures |
| L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies |
| Sol. Stat. Comm. 115 (2000) 575 - … |
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| Low-noise metal-insulator-semiconductor UV photodiodes based on GaN |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès |
| Electron. Lett. 36(25) (2000) 2096 - Papier régulier |
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| Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN |
| F.K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Muñoz |
| J. Electron. Mat. 29 (2000) 1351 - … |
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| Infrared studies on GaN single crystals and homoepitaxial layers |
| E. Frayssinet, W. Knap, P. Prystawko, M. Leszczynski, I.Grzegory, T. Suski, B. Beaumont, P. Gibart |
| J. Cryst. Growth 218 (2000) 161 - … |
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| Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements |
| A.F. Brana, A.F. Diaz-Paniagua, F. Batallan, J.A. Garrido, E. Muñoz, F. Omnès |
| J. Appl. Phys 88(2) (2000) 932 - Papier régulier |
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| Modeling of the spectral response of the AlxGa1-xN p-n junction photodetectors |
| M. Hanzaz, A. Bouhdada, E. Monroy, E. Muñoz, P. Gibart, F. Omnès |
| Eur. Phys. J. Appl. Phys. 11 (2000) 29 - … |
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| Native vacancies in N-doped and undoped ZnSe layers studied by positron annihilation. |
| P. Desgardin, J. Oila, K. Saarinen, P. Hautojarvi, E. Tournié, J.P. Faurie, C. Corbel |
| Phys. Rev. B 62 (2000) 15711 - Papier régulier |
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| Time response analysis of ZnSe-based Schottky barrier photodetectors |
| E. Monroy, F. Vigue, F. Calle, E. Muñoz and J.P. Faurie, |
| Appl. Phys. Lett. 77 (2000) 2761 - Papier régulier |
| |
| Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures |
| E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski |
| Mater. Res. Soc. Symp. Proc. 639 (2000) G7.5 - … |
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| Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures |
| P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
| Mater. Res. Soc. Symp. Proc. 639 (2000) G9.8 - … |
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| Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation |
| K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean |
| Mater. Res. Soc. Symp. Proc. 639 (2000) G9.11 - … |
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| Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red |
| Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J. |
| Mater. Res. Soc. Symp. Proc. 639 (2000) G10.1.1-11 - Article de conférence - invité |
| |
| AlGaN photodiodes for monitoring the solar UV radiation |
| E. Muñoz, E. Monroy, F. Calle, F. Omnès, P. Gibart |
| Journal of Geophysical Research 105 (2000) 4865 - … |
| |
| Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN |
| P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra |
| MRS Internet J. Nitride Semicond. Res. 5 (2000) 8 - Papier régulier |
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| AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment |
| T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude |
| Proc. IEEE Ultrason. Symp. 1 (2000) 293-297 - Article de conférence |
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| Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes |
| E. Monroy, F. Calle, J.L. Pau, F.J. Sanchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart |
| J. Appl. Phys 88(2) (2000) 2081 - Papier régulier |
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| Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation |
| A. Amokrane, S. Dassonneville, B. Sieber, J.L. Farvaque, B. Beaumont, V. Bousquet, P. Gibart, J.D. Ganiere, K. Leifer |
| J. Phys.: Condens. Matter 12 (2000) 10271 - Papier régulier |
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| Modeling of the spectral response of the AlxGa1-xN Schottky barrier ultraviolet photodetectors |
| A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, E. Muñoz |
| J. Appl. Phys 87(12) (2000) 8286 - Papier régulier |
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| Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry |
| L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies, |
| Jpn. J. Appl. Phys 39 (2000) 20 - Papier régulier |
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| Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures |
| J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies |
| Thin Solid Films 364 (2000) 156 - … |
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| GaAs/GaAs twist-bonding for compliant substrates : interface structure and epitaxial growth |
| G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.C. Harmand, F. Glas |
| Applied Surface Science 164 (2000) 15 - … |
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| Time-resolved spectroscopy of MBE-grown nitride based heterostructures |
| M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald |
| Phys. Stat. Sol. (a) 178 (2000) 101 - … |
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| Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells |
| M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies |
| Phys. Stat. Sol. (a) 180 (2000) 127 - … |
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| Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) |
| H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart |
| J. Cryst. Growth 217 (2000) 13 - Papier régulier |
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| Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots |
| A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a) 180 (2000) 375 - … |
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| Study of the band alignment in (Zn,Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy |
| C. Guenaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, J.P. Faurie |
| J. Appl. Phys 87 (2000) 1863 - Papier régulier |
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| TEM study of crystal defects in ZnSe/GaAs(001) epilayers |
| S. Lavagne, C. Levade, G. Canderschaeve, J. Crestou, E. Tournié, J.P. Faurie |
| J. Phys.: Condens. Matter 12(49) (2000) 10287 - Papier régulier |
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| Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films |
| Y. Xin, J.I. Arslan, S. Sivananthan, N.D. Browning, S.J. Pennycook, F. Omnès, B. Beaumont, J.P. Faurie, P. Gibart |
| Appl. Phys. Lett. 76 (2000) 466 - Papier régulier |
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| Optically detected magneto resonance mapping on the yellow luminescence in GaN |
| K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart |
| Appl. Phys. Lett. 76 (2000) 1828 - Papier régulier |
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| GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates |
| M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu |
| Appl. Phys. Lett. 76 (2000) 3807 - Papier régulier |
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| Surface kinetics of GaN evaporation and growth by molecular beam epitaxy |
| S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano |
| Surf. Sci. 450 (2000) 191 - … |
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| A Raman study of ZnxBe1-xSe alloy (100) epitaxial layers |
| O. Pages, M. Ajjouin, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie |
| Appl. Phys. Lett. 77 (2000) 519 - Papier régulier |
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| Signature of GaN-AlN quantum dots by nonresonant Raman scattering |
| J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett. 77 (2000) 2174 - Papier régulier |
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| High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates |
| E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude |
| Appl. Phys. Lett. 77 (2000) 2551 - Papier régulier |
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| (Al,Ga)N Ultraviolet Photodetectors and Applications |
| E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnès, P. Gibart |
| Phys. Stat. Sol. (a) 180 (2000) 293 - … |
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| Spectroscopic studies of InGaN ternary alloys |
| H.P.D. Schenk, P. De Mierry, F. Omnès, and P. Gibart |
| Phys. Stat. Sol. (a) 176 (1999) 307 - Article de conférence |
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