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| LO-phonon-assisted polariton lasing in a ZnO-based microcavity |
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| Fabrication and properties of etched GaN nanorods |
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| Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon |
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| A new approach for AFM cantilever elaboration with 3C-SiC |
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| Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates |
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| Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC |
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| Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si |
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| Graphene/SiC interface control using propane-hydrogen CVD
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| Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents |
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| Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter |
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| MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies |
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| Measurement of Pulsed Current–Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K |
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| Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on r-plane sapphire from 0.74 to 6.45 eV
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| IEEE J Quantum Electron46 (2010) 1058 - Papier régulier |
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| Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range |
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| Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission |
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| Phys. Stat. Sol. B247 (2010) 1282 - Papier régulier |
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| Luminescence properties of ZnO/Zn1-xCdxO/ZnO double heterostructures |
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| Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure
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| Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC |
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| C.Mavroidis, J.J.Harris, R.B.Jackman, I.Harrison, N.J. Ansell, Z. Bougrioua, I.Moerman. |
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| AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments |
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| Mater. Res. Soc. Symp. Proc. (2002) - … |
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| Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers |
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| Full Si wafer conversion into bulk 3C-SiC |
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| Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN |
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| Mat. Sci. Eng. B93 (2002) 224 - Article de conférence |
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| AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances |
| Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage |
| Phys. Stat. Sol. (a)N°1 (2002) 61 - Article de conférence |
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| On the effect of high Mg doping on the polarity of GaN |
| P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean |
| Institute of Physics Conferences Seriesn°169 (2002) 307 - Article de conférence |
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| Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN |
| H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart |
| Appl. Phys. Lett.75 (2002) 2587 - Papier régulier |
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| 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire |
| F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie |
| Phys. Stat. Sol. (b)229 (2002) 931 - Article de conférence |
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| Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes |
| S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies |
| Phys. Stat. Sol. (a)139 (2002) - … |
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| Structural defects and relation with optoelectronic properties in highly Mg-doped GaN. |
| M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart |
| Phys. Stat. Sol. (a)192 (2002) 394 - Article de conférence |
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| Growth of gallium nitride epitaxial layers by metal organics vapour phase epitaxy and applications |
| B. Beaumont, F. Omnès, P. De Mierry, P. Gibart |
| Vide Science, Technique et Applications3-4 (2002) 553 - … |
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| Structure and morphology of concave-shaped surfaces on 6H-SiC(0001) after H2 etching |
| F. Dulot, L. Mansour, A. Leycuras, W. Wulfhekel, D. Sander, F. Arnaud D'avitaya, M. Hanbucken |
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| Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andres |
| Phys. Stat. Sol. (a)188 (2002) 307 - … |
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| Self compensation of the phosphorus acceptor in ZnSe |
| D. Seghier, H. Gislasson, C. Morhain, M. Teisseire, E. Tournié, G. Neu, J.P. Faurie |
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| AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE |
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| Electron. Lett.38(2) (2002) 91 - Papier régulier |
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| Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors |
| T. Palacios, E. Monroy, F. Calle, F. Omnès |
| Proc. of the IEEE Device Research Conf. (2002) 141 - … |
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| Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films |
| R.J.Jimenez Rioboo, E.Rodriguez-Canas, M.Vila, C.Prieto, F.Calle, T.Palacios, M.A. Sanchez, F.Omnès, O.Ambacher, B.Assouar, E.Elmazria |
| J. Appl. Phys92(11) (2002) 6869 - Papier régulier |
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| High power AlGaN/GaN HEMTs on resistive silicon substrate |
| V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F.Natali, J.Massies |
| Electron. Lett.38 (2002) 750 - Papier régulier |
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| High linearity performances of GaN HEMT devices on silicon substrate at GHz |
| N.Vellas, C.Caquiere, Y.Guhel, M.Werquin, F.Bue, R.Aubry, S.Delage, F.Semond, J.C.De Jaeger |
| IEEE Electron Device Letters23(8) (2002) 461 - Papier régulier |
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| Fabrication and characterization of AlGaN/GaN HEMTs |
| F.Calle, T.Palacios, E.Monroy, J.Grajal, M.Verdu, Z.Bougrioua, I.Moerman |
| J Mater Sci (2002) - … |
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| The GaN yellow luminescence center observed using optoelectronic modulation spectroscopy |
| C.H. Chiu, F. Omnès, C. Caquiere, P. Gibart, J.G. Swanson |
| Journ. of Physics D35 (2002) 609 - Papier régulier |
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| Interplay between Ga-N and Al-N sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy |
| A.L.Alvarez, F.Calle, E.Monray, J.L.Pau, M.A.Sanchez-Garcia, E.Calleja, E.Muñoz, F.Omnès, P.Gibart, P.R.Hageman |
| J. Appl. Phys92(1) (2002) 223 - Papier régulier |
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| Recent progress of the BOLD investigation towards UV detectors for the ESA Solar Orbiter |
| J.F. Hochedez, J. Alvarez, F.D.Auret, P. Bergonzo, M.C.Castex, A.Deneuville, J.M.Defise, B.Fleck, P.Gibart, S.A.Goodman, O.Hainaut, J.P.Kleider, P.Lemaire, J.Manca, E.Monroy, E.Muñoz, P.Muret, M.Nesladek, F.Omnès, E.Pace, J.L.Pau, V.Ralchnko, J.Roggen, U. |
| Diamond and Related Materials11 (2002) 427 - … |
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| Donor spectroscopy in wurtzite GaN heterostructures |
| G. Neu, M. Teisseire-Doninelli, C. Morhain |
| Proc. of the 26th ICPS, Inst. Phys. Conf. Series171 (2002) 19 - Article de conférence |
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| Evidence for alloy formation in dilute GaAs:N compounds |
| E. Tournié, G. Neu, M. Teisseire, M.-A. Pinault, M. Laügt |
| Proc. of the 26th ICPS, Inst. Phys. Conf. Series171 (2002) 27 - Article de conférence |
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| In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy |
| H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle |
| Appl. Phys. Lett.80 (2002) 174 - Papier régulier |
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| Displaced substitutional phosphorus acceptors in zinc selenide |
| D. Wolverson, J.J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, K. Ohkawa, D. Hommel, E. Tournié, J.P. Faurie |
| Phys. Stat. Sol. (b)229 (2002) 257 - … |
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| AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111) |
| Natali,-F.; Antoine-Vincent,-N.; Semond,-F.; Byrne,-D.; Hirsch,-L.; Barriere,-A.-S.; Leroux,-M.; Massies,-J.; Leymarie,-J. |
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| Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001) |
| Sander D; Wulfhekel W; Hanbucken M; Nitsche S; Palmari Jp; Dulot F; D'avitaya Fa; Leycuras A |
| Appl. Phys. Lett.81 (19) (2002) 3570-3572 - Papier régulier |
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| In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes |
| K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B.Damilano, J.Massies |
| Mat. Sci. Eng. B93 (2002) 150 - … |
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| Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures |
| A. Jimenez, E. Calleja, E. Muñoz, M. Varela, C. Ballesteros, U. Jahn, K. Ploog, F. Omnès, P.Gibart |
| Mat. Sci. Eng. B93 (2002) 64 - … |
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| Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells |
| J.Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)190 (2002) 135 - … |
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| Vertical cavity InGaN LEDs grown by MOVPE |
| P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart |
| Phys. Stat. Sol. (a)192 (2002) 335 - Article de conférence |
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| Impact of the defects on the electrical and optical properties of AlGaN ultraviolet detectors |
| M. Hanzaz, A. Bouhdada, P. Gibart, F. Omnès |
| J. Appl. Phys92(1) (2002) 13 - Papier régulier |
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| Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction |
| P.A. Shields, R.J. Nicholas, K.Takashina, N. Grandjean, J. Massies |
| Phys. Rev. B65 (2002) 195320 - Papier régulier |
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| Exciton oscillator strength in GaN/AlGaN quantum wells |
| M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J.Massies |
| Phys. Stat. Sol. (a)190 (2002) 129 - … |
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| The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes |
| S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J.Massies |
| Phys. Stat. Sol. (a)190 (2002) 149 - … |
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| Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells |
| J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N.Grandjean, J.Massies |
| Phys. Stat. Sol. (a)190 (2002) 155 - Article de conférence |
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| Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation |
| J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies |
| J. Appl. Phys92 (2002) 5602 - Papier régulier |
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| Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate |
| S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy |
| Electron. Lett.38 N°8 (2002) 389 - Papier régulier |
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| Sub-micron technology in group-III nitrides : application to electronic devices |
| T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnès, Z.Bougrioua, E. Muñoz |
| Proc. 11th Europ.Heterostructure Technology Work. (2002) - … |
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| Free carrier mobility in AlGaN/GaN quantum wells |
| J.L. Farvacque, Z. Bougrioua, F. Carosella, I. Moerman |
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| Relation between microstructure and 2DEG properties in AlGaN/GaN structures |
| B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, I. Moerman |
| Phys. Stat. Sol. (b)234 N°3 (2002) 830 - … |
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| Influence of surface treatments on DC performance of GaN-based HFETs |
| T.D.Mistele, T.Rotter, Z.Bougrioua, M.Marso, H.Roll, H.Klausing, F.Fedler, O.K. Semchinova, J.Aderhold, I.Moerman, J.Graul |
| Phys. Stat. Sol. (a)194 N°2 (2002) 452 - … |
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| Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N |
| E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F.J. Sanchez, M.T. Montojo, M.Eickhoff, F.Omnès, Z.Bougrioua, I. Moerman |
| Semicond. Sci. Tech.17,N°9 (2002) L47 - Papier régulier |
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| Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells |
| A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F.Semond, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)190 (2002) 87 - Article de conférence |
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| Properties of a hole trap in n-type hexagonal GaN |
| P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart |
| J. Appl. Phys91(5) (2002) 2998 - Papier régulier |
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| CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia |
| T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
| Sol. Stat. Comm.117 (2001) 445 - Papier régulier |
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| Silicon nitride passivation effects on GaN MESFET |
| C. Gaquiere, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, J.C. De Jaeger, F. Omnès |
| Proceedings WOCSDICE (2001) VIII-11 - … |
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| (Al,Ga)N ultraviolet detectors on sapphire and Si substrates |
| E. Muñoz, E. Monroy, J.L. Pau, F. Calle, M.A. Sanchez, E. Calleja, F. Omnès, B. Beaumont, P. Gibart |
| Proceedings WOCSDICE (2001) XV-5 - … |
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| Raman study of ZnxBe1-xSe solid solutions |
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| 2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE" |
| Z. Bougrioua, J.L. Farvaque, I. Moerman, F. Carosella |
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| Growth of GaN on (111) Si : a route towards self-supported GaN |
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| Dielectric microcavity in GaN/Si |
| J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean |
| Phys. Stat. Sol. (a)183 (2001) 35 - … |
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| Diamond UV detectors for future solar physics missions |
| J.F. Hochedez, P. Bergonzo, M.C. Castex, P. Dhez, O. Hainaut, M. Sacchi, J. Alvarez, H. Boyer, A. Deneuville, P. Gibart, B. Guizard, J.P. Kleider, P. Lemaire, C. Mer, E. Monroy, E. Muñoz, P. Muret, F. Omnès, J.L. Pau, V. Ralchenko, D. Tromson, E. Verwicht |
| Diamond and Related Materials10(3-7) (2001) 673 - … |
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| Zn(MgBe)Se ultraviolet photodetectors |
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| Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire |
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| Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields |
| M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)183 (2001) 61 - … |
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| Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells |
| D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)183 (2001) 129 - … |
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| Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy |
| L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)183 (2001) 139 - … |
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| Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures |
| J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Daudin, N. Grandjean |
| Phys. Stat. Sol. (a)183 (2001) 157 - … |
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| High quality p+-n+ GaAs tunnel junction diode grown by atmospheric pressure MOVPE |
| L. Beji, B. El Jani, P. Gibart |
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| Strain state in GaN epilayers from optical experiments |
| E. Deleporte, C. Guenaud, M. Voos, B. Beaumont, P. Gibart |
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| Application and performance of GaN based UV detectors |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart |
| Phys. Stat. Sol. (a)185(1) (2001) 91 - … |
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| Optical properties of self-assembled InGaN/GaN quantum dots |
| T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies |
| Mat. Sci. Eng. B82 (2001) 22 - … |
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| Modeling of absorption and emission spectra of InGaN layers grown by MBE |
| L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies |
| Mat. Sci. Eng. B82 (2001) 71 - … |
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| Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy |
| P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart |
| Mat. Sci. Eng. B82 (2001) 91 - … |
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| On carrier localization in GaInNAs/GaAs quantum well heterostructures |
| M.A. Pinault, E. Tournié |
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| Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : spectroscopic characterization and dislocation contrasts |
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| Stress control in GaN grown on silicon(111) by MOPVE |
| E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart |
| Appl. Phys. Lett.79 (2001) 3220 - Papier régulier |
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| Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultra-violet photodetection |
| F. Vigué, E. Tournié, J.P. Faurie |
| IEEE J. Quant. Electr.37(9) (2001) 1146 - Papier régulier |
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| Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111) |
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| Surface morphology of GaN grown by molecular beam epitaxy |
| S. Vézian, J. Massies, F. Semond, N. Grandjean |
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| Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers |
| H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart |
| Mat. Sci. Eng. B82 (2001) 163 - Article de conférence |
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| InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible qpectrum |
| B. Damilano, N. Grandjean, J. Massies |
| Mat. Sci. Eng. B82 (2001) 224 - … |
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| Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE |
| S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
| Mat. Sci. Eng. B82 (2001) 256 - … |
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| High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy |
| F. Semond, P. Lorenzini, N. Grandjean, J. Massies |
| Appl. Phys. Lett.82 (2001) 335 - Papier régulier |
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| Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors. |
| G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet |
| Physica B302-303 (2001) 39 - … |
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| Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes |
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| Appl. Phys. Lett.78(11) (2001) 4190 - Papier régulier |
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| Wide band-gap ZnMgBeSe alloys grown onto GaAs by molecular-beam epitaxy |
| E. Tournié, F. Vigué, M. Laügt, J.P. Faurie |
| J. Cryst. Growth223 (2001) 461 - … |
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| Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates |
| F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie |
| Appl. Phys. Lett.79 (2001) 194 - Papier régulier |
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| Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy |
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| Influence of alloy stability on the photoluminescence properties of GaAs//GaAs quantum wells grown by molecular-beam epitaxy |
| M.A. Pinault, E. Tournié |
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| GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy |
| N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
| Semicond. Sci. Tech.16 (2001) 358 - Papier régulier |
| |
| InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties |
| B. Damilano, N. Grandjean, S. Vézian, J. Massies |
| J. Cryst. Growth227/228 (2001) 466 - … |
| |
| Epitaxial Lateral overgrowth of GaN |
| B. Beaumont, P. Vennéguès, P. Gibart |
| Phys. Stat. Sol. (b)227 (2001) 1-43 - Papier régulier |
| |
| Group-III nitride quantum heterostructures grown by molecular beam epitaxy |
| N. Grandjean, B. Damilano, J. Massies |
| J. Phys.: Condens. Matter13 (2001) 6945 - Papier régulier |
| |
| Crack-free thick GaN layers on silicon(111) by MOVPE |
| E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart |
| Phys. Stat. Sol. (a)188 (2001) 531 - Article de conférence |
| |
| Epitaxial Lateral Overgrowth of GaN on Silicon (111) |
| E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart |
| Phys. Stat. Sol. (a)188 (2001) 733 - Article de conférence |
| |
| Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE |
| H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle |
| Phys. Stat. Sol. (a)188 (2001) 899 - Article de conférence |
| |
| Donor and donor bound-exciton spectroscopy in wurtzite GaN heterostructures. |
| M. Teisseire, G. Neu, C. Morhain |
| Phys. Stat. Sol. (b)228 (2001) 501 - … |
| |
| Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices |
| F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras |
| Ann. Chim. Sci. Mater.26 (2001) 177 - Article de conférence |
| |
| Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells |
| M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
| Mat. Sci. Eng. B82 (2001) 140 - … |
| |
| Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes |
| M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (b)228 (2001) 129 - … |
| |
| Excitonic properties of ZnS quantum wells |
| B. Urbaszek, C.M. Townsley, X. Tang, C. Morhain, A. Balocchi, K.A. Prior, R.J. Nicholas, B.C. Cavenett |
| Phys. Rev. B64(15) (2001) 155321 - Papier régulier |
| |
| Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe |
| J.J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel,E. Tournié, J.P. Faurie |
| Phys. Rev. B64 (2001) 205-206, 1 - Papier régulier |
| |
| Vibrational evidence for percolative effect in ZnBeSe |
| O. Pages, M. Aijoun, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie |
| Phys. Rev. B65 (2001) 035213 - Papier régulier |
| |
| Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure |
| A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux |
| Phys. Rev. B89 (2001) 3775 - Papier régulier |
| |
| Nuclear microprobe analysis of GaN bases light emitting diodes |
| L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz |
| Phys. Stat. Sol. (a)188 (2001) 171 - … |
| |
| High performance solar blind detectors based on AlGaN grown by MBE on Si |
| J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)188 (2001) 325 - … |
| |
| Micro-Raman study of wurtzite AlN layers grown on Si(111). |
| J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, D. Semond, J. Massies |
| Phys. Stat. Sol. (a)188 (2001) 511 - … |
| |
| Potentialities of GaN-based microcanivities grown on silicon substrates |
| N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson |
| Phys. Stat. Sol. (a)188 (2001) 519 - … |
| |
| Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells |
| P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)188 (2001) 839 - … |
| |
| Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect |
| M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies |
| Phys. Rev. B64 (2001) 121304 - Papier régulier |
| |
| Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect |
| P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
| Phys. Stat. Sol. (b)228 (2001) 65 - … |
| |
| Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy |
| H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche |
| Phys. Stat. Sol. (a)188 (2001) 537 - Article de conférence |
| |
| Phonon-assisted optical transitions in GaN with impurities and defects |
| P. Tronc, Yu. E. Kitaev, G. Wang, M.F. Limonov, G. Neu |
| Physica B302-303 (2001) 291 - … |
| |
| Raman mapping of epitaxial lateral overgrown GaN : stress at the coalescence boundary |
| M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart |
| J. Appl. Phys90 (2001) 3656 - Papier régulier |
| |
| High quality AlxGa1-xN(0.15 £ x £ 0.45)/GaN distributed Bragg reflectors grown by MBE for resonant cavity LEDs |
| S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog |
| Semicond. Sci. Tech.16 (2001) 913 - Papier régulier |
| |
| Heterostructure field effect transistor types with novel gate dielectrics |
| D. Mistele, T. Rotter, Z. Bougrioua, K.S. Rover, F. Fedler, H. Klausing, J. Stemmer, O.K. Semchinova, J. Aderhold, J. Graul |
| Phys. Stat. Sol. (a)188, N°1 (2001) 225 - … |
| |
| Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers |
| C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua, I. Moerman |
| Phys. Stat. Sol. (b)228 (2001) 579 - … |
| |
| Guided elastic waves in GaN on sapphire |
| S. Camou, Th. Pastureaud, H.P.D. Schenk, S. Ballandras, and V. Laude |
| Electron. Lett.37 (2001) 1053 - Papier régulier |
| |
| High temperature nitride sources for plastic optical fibre data buses |
| B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi |
| Proc. Tenth Int’l Plastic Optic Fibres Conf.10 (2001) 81-87 - Article de conférence |
| |
| Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications |
| Semond, F; Cordier, Y; Grandjean, N, et al. |
| Phys. Stat. Sol. (a)188 (2) (2001) 501-510 - Article de conférence - invité |
| |
| Photoconductance measurements and Stokes shift in InGaN alloys |
| J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies |
| Mat. Sci. Eng. B82 (2001) 197 - … |
| |
| Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells |
| B. Damilano, N. Grandjean, C. Pernot, J. Massies |
| Jpn. J. Appl. Phys40 (2001) L918 - … |
| |
| Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields |
| D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)188 (2001) 851 - … |
| |
| Quantum beats of free and bound excitons in GaN |
| K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kkuwata-Gonokami, B. Beaumont, P. Gibart |
| Appl. Phys. Lett.79 (2001) 1097 - Papier régulier |
| |
| Core structure of dislocations in GaN revealed by transmission electron microscopy |
| T. Remmele, M. Albrecht, H.P. Strunk, A.T. Blumenau, M.I. Heggie, J. Elsner. T. Frauenheim, H.P.D. Schenk, and P. Gibart |
| Proc. Royal Microsc. Soc. Conf. (2001) 323-326 - Article de conférence |
| |
| Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition |
| P. Ruterana, G. De Saint Jores, M. Laügt, F. Omnès, E. Bellet-Amalric |
| Appl. Phys. Lett.78(3) (2001) 344 - Papier régulier |
| |
| High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy |
| P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett.78 (2001) 1252 - Papier régulier |
| |
| New form of ordering in AlGaN |
| P. Ruterana, G. De Saint-Jores, F. Omnès |
| Mat. Sci. Eng. B82 (2001) 203 - … |
| |
| Characterization of electron-irradiated n-GaN |
| S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, P. Gibart |
| Appl. Phys. Lett.78(11) (2001) 1538 - Papier régulier |
| |
| In-situ etching at InGaAs/GaAs quantum well interfaces |
| E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia |
| J. Cryst. Growth222 (2001) 471 - … |
| |
| Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures |
| P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
| Phys. Rev. B64 (2001) 115319 - Papier régulier |
| |
| Direct signature of strained GaN quantum dots by Raman scattering |
| J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett.79 (2001) 686 - Papier régulier |
| |
| Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes |
| P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett.78 (2001) 1538 - Papier régulier |
| |
| Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells |
| S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies |
| Appl. Phys. Lett.79 (2001) 1483 - Papier régulier |
| |
| High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE |
| S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog |
| Appl. Phys. Lett.79 (2001) 2136 - Papier régulier |
| |
| III nitrides and UV detection |
| E. Muñoz, E. Monroy, J.L. Pau, F. Calle, F. Omnès, P. Gibart |
| J. Phys.: Condens. Matter13(32) (2001) 7115 - Papier régulier |
| |
| Deuterium diffusion in Mg-doped GaN layers grown by MOVPE |
| P. Theys, Z. Teukam, F. Jomard, P. De Mierry, A.Y. Polyakov, M. Barbe |
| Semicond. Sci. Tech.16 (2001) L53 - Papier régulier |
| |
| Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN |
| A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies |
| J. Appl. Phys89 (2001) 1070 - Papier régulier |
| |
| Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : time evolution with low energy electron beam |
| S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart, J.D. Ganiere, K. Leifer |
| J. Appl. Phys89 (2001) 7966 - Papier régulier |
| |
| AlGaN-based UV photodetectors |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart |
| J. Cryst. Growth230 (3-4) (2001) 537 - … |
| |
| Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies |
| P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies |
| Phys. Rev. B63 (2001) 245319 - Papier régulier |
| |
| Free-carrier effects in gallium n itride epilayers : valence-band dispersion |
| P.A. Shields, R.J. Nicholas, F.M. Peeters, B. Beaumont, P. Gibart |
| Phys. Rev. B64 (2001) 081203 - Papier régulier |
| |
| Impact ionization of excitons in an electric field in GaN |
| D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart |
| J. Phys.: Condens. Matter13 (2001) 7043 - Papier régulier |
| |
| Finite element analysis of epitaxial lateral overgrown GaN : voids at the coalescence boundary |
| M. Benyoucef, M. Kuball, G. Hill, M. Wisnom, B. Beaumont, P. Gibart |
| Appl. Phys. Lett.79 (2001) 4127 - Papier régulier |
| |
| Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots |
| P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (b)224 (2001) 53 - … |
| |
| Magneto-photoluminescence of AlGaN/GaN quantum wells |
| P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies |
| J. Cryst. Growth230 (3-4) (2001) 487 - … |
| |
| Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy |
| P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies |
| J. Microscopy202 (2001) 212 - … |
| |
| Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate. |
| N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht |
| J. Appl. Phys88 (2000) 183 - Papier régulier |
| |
| Green electroluminescent (Ga,InAl)N LEDs grown on Si(111) |
| S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux |
| Electron. Lett.36(20) (2000) 1728 - Papier régulier |
| |
| High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-ultraviolet spectral range |
| F. Vigue, P. De Mierry, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz |
| Electron. Lett.36 (2000) 826 - Papier régulier |
| |
| ZnSe-based Schottky barrier photodetectors |
| F. Vigué, E. Tournié, J.P. Faurie |
| Electron. Lett.36(25) (2000) 352 - Papier régulier |
| |
| Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC |
| P. Vennéguès, H. Lahrèche |
| Appl. Phys. Lett.77 (2000) 4310 - Papier régulier |
| |
| Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy |
| E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau |
| Appl. Phys. Lett.77 (2000) 2189 - Papier régulier |
| |
| High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO |
| H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart |
| Diamond and Related Materials9 (2000) 452 - … |
| |
| Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation |
| H.P.D. Schenk, M. Leroux, and P. De Mierry |
| J. Appl. Phys88 (2000) 1525 - Papier régulier |
| |
| Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers |
| E. Tournié, G. Neu, M. Teisseire, J.P. Faurie, H. Pelletier, B. Theys |
| Phys. Rev. B62(19) (2000) 12868 - Papier régulier |
| |
| MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization |
| S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
| Thin Solid Films380 (2000) 195 - … |
| |
| GaN and InGaN quantum dots grown by MBE : from UV to red light emission |
| N. Grandjean, B. Damilano, J. Massies |
| Proc. of Int. Workshop on Nitride Semiconductors (2000) 1002 - … |
| |
| AlGaN based structures on sapphire for visible blind Schottky barrier UV photodetectors : towards high performance device applications |
| F. Omnès, E. Monroy, B. Beaumont, F. Calle, E. Muñoz, P. Gibart |
| Proc. SPIE3948 (2000) 234 - … |
| |
| Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN |
| G. Neu, M. Teisseire, N. Grandjean, H. Lahrèche, B. Beaumont, I. Grzegory, S. Porowski, P. Tronc |
| Proc. Int. Conf. on the Physics of Semiconductors (2000) - … |
| |
| AlxGa1-xN-based UV photodetectors and waveguides |
| F. Omnès, E. Monroy, B. Beaumont, E. Doghèche, F. Calle, E. Muñoz, P. Gibart |
| Proc. of Compound Semiconductor Power Transistors2000-1 (2000) 205 - … |
| |
| Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films |
| M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai |
| Appl. Phys. Lett.77 (2000) 2115 - Papier régulier |
| |
| From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization |
| M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies |
| Materials Science Forum353-356 (2000) 795 - … |
| |
| Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties |
| C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie |
| Journal Electron. Mater.29(6) (2000) 883 - … |
| |
| AlxGa1-xN based UV visible –blind photodetector applications |
| F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart |
| Opto-Electronics Review8(1) (2000) 43 - … |
| |
| Growth of CVD thin films and thick LPE 3C-SiC in a specially designed reactor |
| A. Leycuras |
| Materials Science Forum338-342 (2000) 241 - … |
| |
| Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy |
| B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie |
| Phys. Stat. Sol. (a)180 (2000) 363 - … |
| |
| Comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN |
| B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahrèche, F. Omnès |
| J. Electron. Mat.29 (2000) 603 - … |
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| Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum |
| A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire |
| J. Cryst. Growth209 (2000) 435 - … |
| |
| Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy |
| H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart |
| J. Appl. Phys87 (2000) 577 - Papier régulier |
| |
| Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods |
| P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart |
| J. Appl. Phys87(12) (2000) 4175 - Papier régulier |
| |
| Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots |
| N. Grandjean, B. Damilano, J. Massies S. Dalmasso |
| Sol. Stat. Comm.113 (2000) 495 - Papier régulier |
| |
| GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range |
| B. Damilano, N. Grandjean, J. Massies, F. Semond |
| Applied Surface Science164 (2000) 241 - … |
| |
| Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001) |
| C. Chauvet, E. Tournié, J.P. Faurie |
| J. Cryst. Growth214/215 (2000) 95 - … |
| |
| ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range |
| F. Vigué, A. Bouille, E. Tournié, J.P. Faurie |
| Phys. Stat. Sol. (a)181(1) (2000) 301 - … |
| |
| ZnSe-based heterostructures for blue-green lasers. |
| J.P. Faurie, E. Tournié |
| CR. Acad. Sci. Paris1, série IV (2000) 23 - … |
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| Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers |
| G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko |
| Appl. Phys. Lett.77 (2000) 1348 - Papier régulier |
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| Nature of the bandgap of Zn1-xBexSe alloys, |
| C. Chauvet, E. Tournié, J.P. Faurie |
| Phys. Rev. B61 (2000) 5332 - Papier régulier |
| |
| In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) |
| S. Vézian, J Massies, F. Semond, N. Grandjean P. Vennéguès |
| Phys. Rev. B61 (2000) 7618 - Papier régulier |
| |
| Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular- beam epitaxy |
| G. Neu, E. Tournié, C. Morhain, M. Teisseire, J.P. Faurie |
| Phys. Rev. B61 (2000) 15789 - Papier régulier |
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| Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range |
| F. Vigué, E. Tournié, J.P. Faurie |
| Appl. Phys. Lett.76 (2000) 242 - Papier régulier |
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| Growth of gallium nitride epitaxial layers and applications |
| B. Beaumont, P. Gibart, N. Grandjean, J. Massies |
| C.R. Acad. Sci. Paris1, série IV (2000) 35 - … |
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| Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN |
| P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart |
| Appl. Phys. Lett.77 (2000) 880 - Papier régulier |
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| InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K |
| B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie |
| Appl. Phys. Lett.77 (2000) 1268 - Papier régulier |
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| Hydrogen/deuterium : a probe to investigate carrier-compensation in ZnSe:N |
| E. Tournié, H. Pelletier, G. Neu, B. Theys, A. Lusson, M. Teisseire, C. Chauvet, J.P. Faurie |
| J. Cryst. Growth214/215 (2000) 507 - … |
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| High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates |
| W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski |
| Mater. Res. Soc. Symp. Proc.639 (2000) G7.3 - … |
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| Réalisation de structures photoniques avancées |
| D. Peyrade, F. Carcenac, L. Manin, V. Thierry-Mieg, N. Grandjean, D. Coquillat, R. Legros, Y. Chen |
| J. Phys. IV France10 (2000) 8-125 - … |
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| Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures |
| L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies |
| Sol. Stat. Comm.115 (2000) 575 - … |
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| Low-noise metal-insulator-semiconductor UV photodiodes based on GaN |
| E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès |
| Electron. Lett.36(25) (2000) 2096 - Papier régulier |
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| Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN |
| F.K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Muñoz |
| J. Electron. Mat.29 (2000) 1351 - … |
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| Infrared studies on GaN single crystals and homoepitaxial layers |
| E. Frayssinet, W. Knap, P. Prystawko, M. Leszczynski, I.Grzegory, T. Suski, B. Beaumont, P. Gibart |
| J. Cryst. Growth218 (2000) 161 - … |
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| Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements |
| A.F. Brana, A.F. Diaz-Paniagua, F. Batallan, J.A. Garrido, E. Muñoz, F. Omnès |
| J. Appl. Phys88(2) (2000) 932 - Papier régulier |
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| Modeling of the spectral response of the AlxGa1-xN p-n junction photodetectors |
| M. Hanzaz, A. Bouhdada, E. Monroy, E. Muñoz, P. Gibart, F. Omnès |
| Eur. Phys. J. Appl. Phys.11 (2000) 29 - … |
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| Native vacancies in N-doped and undoped ZnSe layers studied by positron annihilation. |
| P. Desgardin, J. Oila, K. Saarinen, P. Hautojarvi, E. Tournié, J.P. Faurie, C. Corbel |
| Phys. Rev. B62 (2000) 15711 - Papier régulier |
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| Time response analysis of ZnSe-based Schottky barrier photodetectors |
| E. Monroy, F. Vigue, F. Calle, E. Muñoz and J.P. Faurie, |
| Appl. Phys. Lett.77 (2000) 2761 - Papier régulier |
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| Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures |
| E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski |
| Mater. Res. Soc. Symp. Proc.639 (2000) G7.5 - … |
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| Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures |
| P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
| Mater. Res. Soc. Symp. Proc.639 (2000) G9.8 - … |
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| Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation |
| K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean |
| Mater. Res. Soc. Symp. Proc.639 (2000) G9.11 - … |
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| Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red |
| Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J. |
| Mater. Res. Soc. Symp. Proc.639 (2000) G10.1.1-11 - Article de conférence - invité |
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| AlGaN photodiodes for monitoring the solar UV radiation |
| E. Muñoz, E. Monroy, F. Calle, F. Omnès, P. Gibart |
| Journal of Geophysical Research105 (2000) 4865 - … |
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| Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN |
| P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra |
| MRS Internet J. Nitride Semicond. Res.5 (2000) 8 - Papier régulier |
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| AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment |
| T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude |
| Proc. IEEE Ultrason. Symp.1 (2000) 293-297 - Article de conférence |
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| Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes |
| E. Monroy, F. Calle, J.L. Pau, F.J. Sanchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart |
| J. Appl. Phys88(2) (2000) 2081 - Papier régulier |
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| Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation |
| A. Amokrane, S. Dassonneville, B. Sieber, J.L. Farvaque, B. Beaumont, V. Bousquet, P. Gibart, J.D. Ganiere, K. Leifer |
| J. Phys.: Condens. Matter12 (2000) 10271 - Papier régulier |
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| Modeling of the spectral response of the AlxGa1-xN Schottky barrier ultraviolet photodetectors |
| A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, E. Muñoz |
| J. Appl. Phys87(12) (2000) 8286 - Papier régulier |
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| Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry |
| L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies, |
| Jpn. J. Appl. Phys39 (2000) 20 - Papier régulier |
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| Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures |
| J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies |
| Thin Solid Films364 (2000) 156 - … |
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| GaAs/GaAs twist-bonding for compliant substrates : interface structure and epitaxial growth |
| G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.C. Harmand, F. Glas |
| Applied Surface Science164 (2000) 15 - … |
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| Time-resolved spectroscopy of MBE-grown nitride based heterostructures |
| M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald |
| Phys. Stat. Sol. (a)178 (2000) 101 - … |
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| Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells |
| M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies |
| Phys. Stat. Sol. (a)180 (2000) 127 - … |
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| Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) |
| H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart |
| J. Cryst. Growth217 (2000) 13 - Papier régulier |
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| Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots |
| A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
| Phys. Stat. Sol. (a)180 (2000) 375 - … |
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| Study of the band alignment in (Zn,Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy |
| C. Guenaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, J.P. Faurie |
| J. Appl. Phys87 (2000) 1863 - Papier régulier |
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| TEM study of crystal defects in ZnSe/GaAs(001) epilayers |
| S. Lavagne, C. Levade, G. Canderschaeve, J. Crestou, E. Tournié, J.P. Faurie |
| J. Phys.: Condens. Matter12(49) (2000) 10287 - Papier régulier |
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| Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films |
| Y. Xin, J.I. Arslan, S. Sivananthan, N.D. Browning, S.J. Pennycook, F. Omnès, B. Beaumont, J.P. Faurie, P. Gibart |
| Appl. Phys. Lett.76 (2000) 466 - Papier régulier |
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| Optically detected magneto resonance mapping on the yellow luminescence in GaN |
| K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart |
| Appl. Phys. Lett.76 (2000) 1828 - Papier régulier |
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| GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates |
| M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu |
| Appl. Phys. Lett.76 (2000) 3807 - Papier régulier |
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| Surface kinetics of GaN evaporation and growth by molecular beam epitaxy |
| S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano |
| Surf. Sci.450 (2000) 191 - … |
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| A Raman study of ZnxBe1-xSe alloy (100) epitaxial layers |
| O. Pages, M. Ajjouin, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie |
| Appl. Phys. Lett.77 (2000) 519 - Papier régulier |
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| Signature of GaN-AlN quantum dots by nonresonant Raman scattering |
| J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies |
| Appl. Phys. Lett.77 (2000) 2174 - Papier régulier |
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| High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates |
| E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude |
| Appl. Phys. Lett.77 (2000) 2551 - Papier régulier |
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| (Al,Ga)N Ultraviolet Photodetectors and Applications |
| E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnès, P. Gibart |
| Phys. Stat. Sol. (a)180 (2000) 293 - … |
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| Spectroscopic studies of InGaN ternary alloys |
| H.P.D. Schenk, P. De Mierry, F. Omnès, and P. Gibart |
| Phys. Stat. Sol. (a)176 (1999) 307 - Article de conférence |
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