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The “NanoCRHEAtion” group
was born in 2007 with the aim of exploiting CRHEA’s
long expertise in the field of widebandgap semiconductors,
namely GaN, ZnO, and their related alloys (AlGaN-InGaN
and ZnCdO-ZnMgO). Our research is focused on the growth,
by molecular beam epitaxy (MBE) and metalorganic vapour
phase epitaxy (MOVPE), of ordered nanostructures for
use in photonic and electronic applications such as
single photon emitters, microcavities, waveguides or
high electron mobility transistors.
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Figure
1. Periodically poled (PePo) GaN film for nonlinear
optical applications
(Image from reference: S. Pezzagna, P. Vennéguès,
N. Grandjean, A. D. Wieck and J. Massies, Appl. Phys. Lett. 87,
062106 (2005)).
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Most
of these applications will require a regular arrangement
of the nanostructures, which we achieve by nanosphere
lithography, by e-beam patterning of the substrate and
subsequent replication or by self organization phenomena
at substrate steps (see Figure 2). Thus, our methodology
does not oppose the bottom-up approach against the top-down
one, but rather finds itself at the convergence of both
approaches and makes use of their particular advantages.
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Figure
2. Different methods employed in CRHEA for obtaining
nanostructures exhibiting long range order: (a) Nanosphere
lithography, (b) e-beam patterned Si substrate and (c)
self-organization of GaN quantum dots (Image (c) from
reference: S. Vezian, A. Le Louarn and J. Massies, J.
of Crystal Growth 303, 419 (2007))
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This
same philosophy, based on the use of traditionally competing
techniques, has led us to combine the growth of nanostructures
by MBE and MOCVD. These two techniques have enabled in
the past the development of quantum heterostructures
with extremely abrupt interfaces and controlled doping
levels. These characteristics will be employed for tuning
the optical and electrical properties of the nanostructures
along their axial and radial directions. The control
of the composition and doping profile together with the
growth of defect-free objects, will allow enhancing the
nanostructures performances with respect to their thin
film or bulk counterparts. Furthermore, defect-free nanostructures
will be used as seeds for obtaining defect-free bulk
objects, thereby closing down the gap between Nanotechnology
and Microelectronics.
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Figure
3. GaN film regrown on top of GaN nanocolumns (Image
from reference: Z. Bougrioua et al., J. of Crystal
Growth, in press)
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The
structural characterization of the resulting nanostructures
is carried out by scanning electron microscopy, atomic force
microscopy, scanning tunnelling microscopy and transmission
electron microscopy. For the optical characterization we have
photoluminescence (PL), selective PL and electroluminescence
facilities, while for the electrical characterization we have
I-V, C-V and Hall effect capabilities. Finally, CRHEA has a
clean room suited for advance processing and demonstration
of device performances.
Figure
4. AFM topographic and zenithal images of CdTe micropyramids
analysed by Nanogoniometry (Images from reference E. Palacios-Lidon,
L. Guanter, J. Zuniga-Perez, V. Munoz Sanjose, and J. Colchero,
Small 3, 474 (2007)).
However,
we believe that to develop still further the fields of Nanoscience
and Nanotechnology we need to bring together scientists from
different laboratories as well as from different research fields,
so do not hesitate to contact us if you feel we can develop
a joint activity.
NanoCRHEAtion
Last
10 publications of NanoCRHEAtion :
| Polariton lasing in a hybrid bulk ZnO microcavity |
| T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
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| Appl. Phys. Lett., 99, 161104,
(2011) - Papier régulier |
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| AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate |
| D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud |
| Appl. Phys. Lett., 98, 261106,
(2011) - Papier régulier |
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| Laser emission with excitonic gain in a ZnO planar microcavity |
| T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule |
| Appl. Phys. Lett., 98, 211105 ,
(2011) - Papier régulier |
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| On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy |
| B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez |
| Appl. Phys. Lett., 98, 011914,
(2011) - Papier régulier |
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| Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities |
| F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J. C. Moreno, F. Semond, M. Leroux, and S. Bouchoule |
| J. Appl. Phys., 108, 043508,
(2010) - Papier régulier |
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| Two-dimensional confined photonic wire resonators: strong light-metter coupling |
| R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinlander, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, and M. grundmann |
| Phys. Stat. Sol. B, 247, 1351,
(2010) - Papier régulier |
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| Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature |
| S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J. C. Moreno, F. Semond, and S. Bouchoule |
| Appl. Phys. Lett., 95, 121102,
(2009) - Papier régulier |
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| Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption |
| F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet |
| Phys. Rev. B, 79, 125302,
(2009) - Papier régulier |
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| Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires |
| B. Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, and M. Grundmann |
| Nanotechnology, 20, 305701,
(2009) - Papier régulier |
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| GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures |
| Sylvain Sergent, Jean-Christophe Moreno, Eric Frayssinet, Sébastien Chenot, Mathieu Leroux, and Fabrice Semond |
| Applied Physics Express, 2, 051003,
(2009) - Papier régulier |
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Autres
Publications :
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page des publications du laboratoire]
Responsable
: Jesus Zuniga Perez
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