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1031 records ordered by date

Laser damage of free-standing nanometer membranes
Y. Morimoto, I. Roland, S. Rennesson, F. Semond, P. Boucaud and P. Baum
J. Appl. Phys. 122 (2017) 215303 - Papier régulier
Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett. 111 (2017) 231903 - Papier régulier
AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate
R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier
Phys. Stat. Sol. A  (2017) 1700642 - Papier régulier
Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors
Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schiliro, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Lesz
Phys. Stat. Sol. A  (2017) 1700653 - Papier régulier
The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc. 268 (2017) 305 - Papier régulier
Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers
N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht
J. Appl. Phys. 122 (2017) 155303 - Papier régulier
Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
Yvon Cordier, Rémi Comyn, Eric Frayssinet, Mario Khoury, Marie Lesecq, Nicolas Defrance, and Jean-Claude De Jaeger
Phys. Stat. Sol. A 10 (2017) 1700637 - Papier régulier
Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates
M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez
J. Appl. Phys. 122 (2017) 105108 - Papier régulier
Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red
Thi Huong Ngo, Nicolas Chery, Pierre Valvin, Aimeric Courville, Philippe de Mierry, Benjamin Damilano, Pierre Ruterana, Bernard Gil
Superlattices Microstruct. 1 (2017) 1 - Papier régulier
ZnCdO: Status after 20 years of research
J. Zúñiga-Pérez
Mat Sci Semicon Proc 69 (2017) 36 - Papier invité
ZnCdO: Status after 20 years of research
J. Zúñiga-Pérez
Mat Sci Semicon Proc 69 (2017) 36 - Papier invité
Hybrid multiple diffraction in semipolar wurtzite materials: (01-12)-oriented ZnMgO/ZnO heterostructures as an illustration
E. de Prado, M. C. Martinez-Tomas, C. Deparis, V. Munoz-Sanjosé, and J. Zúñiga-Pérez
J. Appl. Cryst. 50 (2017) 1165 - Papier régulier
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref
Current Applied Physics 17 (2017) 1601-1608 - Papier régulier
Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
Farsane Tabataba-Vakili,1,2 Iannis Roland,1 Thi-Mo Tran,1 Xavier Checoury,1 Moustafa El Kurdi,1 Sebastien Sauvage,1 Christelle Brimont,3 Thierry Guillet,3 Stephanie Rennesson,4 Jean-Yves Duboz,4 Fabrice Semond,4 Bruno Gayral,2,5 and Philippe Boucaud1
Appl. Phys. Lett. 111 (2017) 131103 - Papier régulier
Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures
Thi Huong Ngo, Bernard Gil, Benjamin Damilano, Pierre Valvin, Aimeric Courville, and Philippe de Mierry
J. Appl. Phys. 122 (2017) 063103 - Papier régulier
LES MÉTASURFACES,des composants optiques fonctionnels ultra-minces
P. GENEVET, P. CHAVEL, N. BONOD
Photoniques 87 (2017) 25 - Papier invité
Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission
S. Matta, J. Brault, T. H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys. 122 (2017) 085706 - Papier régulier
Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures
E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
Appl. Phys. Lett. 111 (2017) 032108 - Papier régulier
Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation
T. Kaldewey, S. Lüker, A. V. Kuhlmann, S. R. Valentin, J.M. Chauveau, A. Ludwig, A. D. Wieck, D. E. Reiter, T. Kuhn, and R. J. Warburton
Phys. Rev. B 95 (2017) 241306(R) - Papier régulier
Freestanding dielectric nanohole array metasurface for mid-infrared wavelength applications
J. R. ONG, H. S. CHU, V. H. CHEN, A. Y. ZHU, AND P. GENEVET
Opt. Lett. 42 (2017) 2639 - Papier régulier
The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs
C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers
RSC Adv. 7 (2017) 25353 - Papier régulier
Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films
J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances 2 (2017) 165 - Article de conférence
Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing
M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault.
J. Cryst. Growth 461 (2017) 10-15 - Papier régulier
Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy
F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances 2 (2017) 189 - Article de conférence
Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system
T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
Appl. Phys. Lett. 110 (2017) 131102 - Papier régulier
Non-metal to metal transition in n-type ZnO single crystal materials
S. Brochen, G. Feuillet, J.L. Santailler, R. Obrecht, M. Lafossas, P. Ferret, J.M. Chauveau,and J. Pernot
J. Appl. Phys. 121 (2017) 095704 - Papier régulier
Intersubband absorption in m-plane ZnO/ZnMgO MQWs
M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, M. Tchernycheva, F. H. Julien, R. Peretti, J. Faist, M. Hugues, J. M. Chauveau, A. Hierro
Proc. SPIE 10105 (2017) 101050O-1 - Article de conférence - invité
Anomalous DC and RF Behavior of Virgin AlGaN/AlN/GaN HEMTs
H. Sánchez Martín, O. García, S. Perez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. Gonzalez, J. Mateos, I.Iniguez de la Torre
Semicond. Sci. Tech. 32 (2017) 035011 - Papier régulier
Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber
M. Vermillac, J.-F. Lupi,F. Peters,M. Cabié, P. Vennéguès,C. Kucera, T. Neisius, J. Ballato, W. Blanc
J. Am. Ceram. Soc.  (2017) 1–6 - Papier régulier
Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes
Marius Grundmann, Chris Sturm, Christian Kranert, Steffen Richter, Rüdiger Schmidt-Grund, C. Deparis, J.Zúñiga-Pérez
Phys. Stat. Sol. RRL 11 (2017) 1600295 - Papier invité
Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes
Rami Khazaka, Jean François Michaud, Philippe Vennéguès, Daniel Alquier, and Marc Portail
Appl. Phys. Lett. 110 (2017) 081602 - Papier régulier
Recent improvements of flexible GaN-based HEMT technology
Sarra Mhedhbi, Marie Lesecq, Philippe Altuntas, Nicolas Defrance, Yvon Cordier, Benjamin Damilano, Gema Tabares Jimenez, Abel Ebongue, and Virginie Hoel
Phys. Stat. Sol. A  (2017) 1600484 - Papier régulier
Excitonic complexes in GaN/(Al,Ga)N quantum dots
D. Elmaghraoui, M. Triki, S. Jaziri, G. Muñoz-Matutano, M. Leroux, J. Martinez-Pastor
J. Phys. Cond. Mat. 29 (2017) 105302 - Papier régulier
Exceptional points in anisotropic photonic structures: from non-Hermitian physics to possible device applications
M. Grundmann, S. Richter, T. Michalsky, C. Sturm, J. Zúñiga-Pérez, and R. Schmidt-Grund
Proc. SPIE 10105 (2017) 0277-786X - Papier invité
Ion-induced interdiffusion of surface GaN quantum dots
C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig
Nuclear Instruments and Methods in Physics Research B 409 (2017) 107 - Article de conférence
Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation
B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth 477 (2017) 262 - Papier régulier
Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction
T.H. Ngo, B. Gil, B. Damilano, K. Lekhal, P. De Mierry
Superlattices Microstruct. 103 (2017) 245 - Papier régulier
Efficient second harmonic generation in low-loss planar GaN waveguides
M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express 25 (2017) 23035-23044 - Papier régulier
High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates
R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A  (2017) - Papier régulier
Recent advances in planar optics: from plasmonic to dielectric metasurfaces
P. Genevet, F. Capasso, F. Aieta, M. Khorasaninejad, and R. Devlin
Optica 4 (1) (2017) 139-152 - Papier régulier
Anisotropic Surface Plasmon Polariton Generation Using Bimodal V‑Antenna Based Metastructures
D. Wintz, A. Ambrosio, A. Y. Zhu, P. Genevet, and F. Capasso
ACS Photonics 4 (1) (2017) 22-27 - Papier régulier
Deep-level spectroscopy in metal–insulator–semiconductor structures
A Kurtz, E. Muñoz, J.M. Chauveau and A. Hierro
J. Phys. D: Appl. Phys. 50 (2017) 065104 - Papier régulier
III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet
J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet
Appl. Phys. Lett. 109 (2016) 231101 - Papier régulier
GaN quantum dot polarity determination by X-ray photoelectron diffraction
O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka
Appl. Surf. Sci. 389 (2016) 1156 - Papier régulier
Polarity in GaN and ZnO: Theory, measurements, growth and devices
J. Zúñiga-Pérez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S. Fernandez-Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M. R. Wagner, J. S. Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, and G. Feuillet
Appl. Phys. Rev. 3 (2016) 041303 - Papier régulier
The 2016 oxide electronic materials and oxide interfaces roadmap
M. Lorenz, M. S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F. K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, J. Zúñiga-Pérez, D. J. Rogers, F.
J. Phys. D: Appl. Phys. 49 (2016) 433001 - Papier invité
On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction
Rami Khazaka, Jean-François Michaud, Philippe Vennéguès, Luan Nguyen, Daniel Alquier, and Marc Portail
J. Appl. Phys. 120 (2016) 185306 - Papier régulier
Ultraviolet light emitting diodes using III-N quantum dots
J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc 55 (2016) 95 - Papier invité
Defect blocking via laterally induced growth of semipolar (1 0 1 1) GaN on patterned substrates
Michel Khoury, Philippe Vennéguès, Mathieu Leroux, Vincent Delaye, Guy Feuillet and Jesus Zúñiga-Pérez
J. Phys. D: Appl. Phys. 49 (2016) 475104 - Papier régulier
Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth
B. Alloing et J. Zúñiga-Pérez
Mat Sci Semicon Proc 55 (2016) 51 - Papier invité
Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN
J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des.  16 (2016) 6454 - Papier régulier
High temperature electrical transport study of Si-doped AlN
S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault
Superlattices Microstruct. 98 (2016) 253 - Papier régulier
High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx
F. Réveret, L. Bignet, W. Zhigang, X. Lafosse, G. Patriarche, P. Disseix F. Médard, M. Mihailovic, J. Leymarie, J. Zúñiga-Pérez and S. Bouchoule
J. Appl. Phys. 120 (2016) 093107 - Papier régulier
Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep. 6 (2016) 34191 - Papier régulier
Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates
A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, and M. Grundmann
AIP Adv 6 (2016) 95013 - Papier régulier
Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si
P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher
J. Micromech. Microeng. 26 (2016) 105015 - Papier régulier
Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality
Florian Tendille, Denis Martin, Philippe Vennéguès, Nicolas Grandjean, and Philippe De Mierry
Appl. Phys. Lett. 109 (2016) 082101 - Papier régulier
Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy
X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua
Phys. Stat. Sol. B  (2016) - Papier régulier
Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions
D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, T. Bauch, A. Michon, A. De Candia, P. Lucignano, F. Lombardi, F. Tafuri, and A. Tagliacozzo
Phys. Rev. B 94 (2016) 054525 - Papier régulier
Superconductivity in the ferromagnetic semiconductor samarium nitride
E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck
Phys. Rev. B 94 (2016) 024106 - Papier régulier
Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy
L. Wang, S. Guillemin, J.M. Chauveau, V. Sallet, F. Jomard, R. Brenier, V. Consonni, G. Brémond
Phys. Stat. Sol. C 13 (2016) 576 - Article de conférence
Anisotropic optical properties of a homoepitaxial (Zn, Mg) O/ZnO quantum well grown on a‐plane ZnO substrate
M. Ali, J. Mohammed, J.M. Chauveau, T. Bretagnon
Phys. Stat. Sol. C 13 (2016) 598 - Article de conférence
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder
J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, and M. Leroux
Appl. Phys. Lett. 108 (2016) 251904 - Papier régulier
Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
M.D. Neumann, N. Esser, J.M. Chauveau, R. Goldhahn and M. Feneberg
Appl. Phys. Lett. 108 (2016) 221105 - Papier régulier
AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth 450 (2016) 22 - Papier régulier
p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For. 858 (2016) 137-142 - Article de conférence - invité
Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC
B. Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, J. R. Huntzinger, A. Tiberj, A.-A. Zahab, T. Bauch, P. Lucignano, A. Tagliacozzo, F. Lombardi and F. Tafuri
J. Supercond. Nov. Magn. 29 (2016) 1145 - Papier régulier
Traditional and emerging materials for optical metasurfaces
A. Y. Zhu, A. I. Kuznetsov, B. Luk'yanchuk, N. Engheta, and P. Genevet
Nanophotonics DOI 10.1515/nanoph-2016-0032 (2016) - Papier invité
Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes
G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L 28 (2016) 1661 - Papier régulier
Polarity Control in Group-III Nitrides beyond Pragmatism
S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Phys. Rev. Applied 5 (2016) 054004 - Papier régulier
First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor
S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel
IEEE Electron Device Letters 37 (2016) 553 - Papier régulier
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes
Mat. Sci. For. 858 (2016) 249-252 - Article de conférence
Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO
O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez
Phys. Rev. B 93 (2016) 115205 - Papier régulier
Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS
Rémi Comyn, Yvon Cordier, Sébastien Chenot, Abdelatif Jaouad, Hassan Maher, Vincent Aimez
Phys. Stat. Sol. A 213 (2016) 917-924 - Article de conférence
Broadband mode conversion via gradient index metamaterials
H.X. Wang, Y.D. Xu, P. Genevet, J.-H. Jiang, and H.Y. Chen
Sci Rep. 6 (2016) 24529 - Papier régulier
Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells
T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry
Jpn. J. Appl. Phys. 55 (2016) 05FG10 - Papier régulier
Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys. 55 (2016) 05FG06 - Papier régulier
Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators
I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express 24 (2016) 9602 - Papier régulier
Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy
L. Wang, J.M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C Sartel, G. Brémond
Appl. Phys. Lett. 108 (2016) 132103 - Papier régulier
Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen
A. Kurtz, A. Hierro, M. Lopez-Ponce, G. Tabares and J.M. Chauveau
Semicond. Sci. Tech. 31 (2016) 035010 - Papier régulier
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
A. Hierro, G. Tabares, M. Lopez-Ponce, J. M. Ulloa, A. Kurtz, E. Muñoz, V. Marín-Borrás, V. Muñoz-Sanjose, J.M. Chauveau
Proc. SPIE 9749 (2016) 97490W - Article de conférence - invité
Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett. 16 (2016) 1863 - Papier régulier
Deep-UV nitride-on-silicon microdisk lasers
J. Sellés, C. Brimont, G. Cassabois, P. Valvin, T. Guillet, I. Roland, Y. Zeng, X. Checoury, P. Boucaud, M. Mexis, F. Semond & B. Gayral
Sci Rep. 6 (2016) 21650 - Papier régulier
Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations
M. Grundmann, and J. Zúñiga-Pérez
Phys. Stat. Sol. B 253 (2016) 351-360 - Papier régulier
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth 434 (2016) 25 - Papier régulier
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett. 108 (2016) 011608 - Papier régulier
Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy
P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express. 9 (2016) 015502 - Papier régulier
Measurement of bound states in the continuum by a detector embedded in a photonic crystal
R. Gansch, S. Kalchmair, P. Genevet, T. Zederbauer, H. Detz, A. M Andrews, W. Schrenk, F. Capasso, M. Lončar and G. Strasser
Light Sci Appl 5 (2016) e16147 - Papier régulier
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth 433 (2016) 165-171 - Papier régulier
Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire
P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
Phys. Stat. Sol. B 253 (2016) 105-111 - Papier régulier
Controlling electromagnetic fields at boundaries of arbitrary geometries
J.Y.H. Teo, L. J. Wong, C. Molardi, and P. Genevet
Phys. Rev. A 94 (2016) 023820 - Papier régulier
Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation
Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud
ACS Photonics 3 (2016) 1240 - Papier régulier
Evidence of multimicrometric coherent γ' precipitates in a hot-forged γ –γ' nickel-based superalloy
M.-A. Charpagne, P. Vennéguès, T. Billot, J.-M. Franchet and N. Bozzolo
J. Microsc. 263 (2016) 106 - Papier régulier
Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity
R. Hahe, C. Brimont, P. Valvin, T. Guillet, F. Li, M. Leroux, J. Zúñiga-Pérez, X. Lafosse, G. Patriarche, and S. Bouchoule
Phys. Rev. B 92 (2015) 235308 - Papier régulier
AlGaN/GaN High Electron Mobility Transistors grown by Ammonia Source Molecular Beam Epitaxy,
Y. Cordier
Gallium Nitride (GaN): Physics, Devices, and Technology F.Medjdoub, CRC Press (2015) 45-60 - Livres et chapitres de livres
Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy
L. Wang, J. Laurent, J.M. Chauveau, V. Sallet, F. Jomard, and G. Brémond
Appl. Phys. Lett. 107 (2015) 192101 - Papier régulier
Yellow–red emission from (Ga,In)N heterostructures
B. Damilano and B. Gil
J. Phys. D: Appl. Phys. 48 (2015) 403001 - Papier régulier
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier and F. Schopfer
Nat. Nanotechnol.  (2015) - Papier régulier
Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal and P. De Mierry
Appl. Phys. Lett. 107 (2015) 122103 - Papier régulier
Towards high quality 3C-SiC membrane on a 3C-SiC pseudo substrate
R. Khazaka, E. Bahette, M. Portail, D. Alquier, J.F. Michaud
Materials Letters 160 (2015) 28 - Papier régulier
Transport of indirect excitons in ZnO quantum wells
Y.Y. Kuznetsova, F. Fedichkin, P. Andreakou, E.V. Calman, L.V. Butov, P.Lefebvre, T. Bretagnon, T. Guillet, M. Vladimirova, C. Morhain,and J.M. Chauveau
Opt. Lett. 40 (2015) 3667 - Papier régulier
Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition
R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud
Acta Mater. 98 (2015) 336 - Papier régulier
Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source
B. Damilano, J. Brault and J. Massies
J. Appl. Phys. 118 (2015) 024304 - Papier régulier
Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys. 118 (2015) 024303 - Papier régulier
Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire
P. Vennéguès, F. Tendille and P. De Mierry
J. Phys. D: Appl. Phys. 48 (2015) 325103 - Papier régulier
Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate
B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A 212 (2015) 2297–2301 - Papier régulier
Native point defect energies, densities, and electrostatic repulsion across (Mg,Zn)O alloys
G.M. Foster, J. Perkins, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
Phys. Stat. Sol. A 212 (2015) 1448 - Papier invité
Comparative studies of n-type 4H-SiC: Raman vs Photoluminescence spectroscopy
P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet
Mat. Sci. For. 821-823 (2015) 237-240 - Article de conférence
Impact of Mg content on native point defects in MgxZn1-xO (0 <= x <= 0.56)
J. Perkins, G.M. Foster, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
APL Materials 3 (2015) 062801 - Papier régulier
Optical characterization of p-type 4H-SiC epilayers
G. Liaugaudas, D. Dargis, P. Kawasnicki, H. Peyre, R. Arvinte, S. Juillaguet, M. Zielinski, K. Jarašiūnas
Mat. Sci. For. 821-823 (2015) 249-252 - Article de conférence
Raman investigation of heavily Al doped 4H-SiC layers grown by CVD
P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski,L. Konczewicz, S. Contreras, J. Camassel and S. Juillaguet
Mat. Sci. For. 806 (2015) 51 - Article de conférence
Improved performance of GaInNAs solar cell after UV-activated hydrogenation
M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers
IEEE PVSC  (2015) 1-3 - Article de conférence
Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate
F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry
Semicond. Sci. Tech. 30 (2015) 065001 - Papier régulier
Epitaxial challenges of GaN on silicon
F. Semond
MRS Bulletin vol 40 (2015) 412-417 - Papier invité
Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS
R. Comyn, Y. Cordier, V. Aimez, and H. Maher
Phys. Stat. Sol. A 212 (2015) 1145-1152 - Article de conférence
Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growth conditions on the array properties
P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B 252 (2015) 1096 - Papier régulier
Al(Ga)N/GaN High Electron Mobility Transistors on Silicon
Y. Cordier
Phys. Stat. Sol. A 212 (2015) 1049-1058 - Papier invité
Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
Appl. Phys. Lett. 106 (2015) 142101 - Papier régulier
Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun 6 (2015) 6806 - Papier régulier
Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate
P. Altuntas, F. Lecourt, A. Cutivet, N. Defrance, E. Okada, M. Lesecq, S. Rennesson, A. Agboton, Y. Cordier, V. Hoel, and J.C. De Jaeger
IEEE Electron. Device Lett. 36 (2015) 303 - Papier régulier
Improved performance in GaInNAs solar cells by hydrogen passivation
M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui
J. Appl. Phys. 106 (2015) 141904 - Papier régulier
Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
T.H. Ngo, D. Rosales, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. de Mierry
Proc. SPIE 9363 (2015) 93630K - Article de conférence
Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P.M. Gammon, M.R. Jennings, M. Thomas, C.A. Fisher, Y.K. Sharma, M. Placidi, M. Chmielowska, S. Chenot, M. Porti, M. Nafría and Y. Cordier
Nanotechnology 26 (2015) 115203 - Papier régulier
Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy
M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès
J. Cryst. Growth 419 (2015) 88-93 - Papier régulier
Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE 9363 (2015) 93630Z - Article de conférence
Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon
Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, M. Mexis, F. Semond, and P. Boucaud
Appl. Phys. Lett. 106 (2015) 081105 - Papier régulier
ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
A. Hierro, G. Tabares, M. Lopez-Ponce, E. Munoz, A Kurtz, B Vinter, J.M. Chauveau
Proc. SPIE 9364 (2015) 93641H - Article de conférence - invité
Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells
G. Tabares, A. Hierro, M. Lopez-Ponce, E. Muñoz, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett. 106 (2015) 061114 - Papier régulier
Highly resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett. 106 (2015) 022401 - Papier régulier
Investigation of Aluminium incorporation in 4H-SiC epitaxial layers
R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre
Mat. Sci. For. 45 (2015) 806 - Article de conférence
3C-SiC : new interest for MEMS devices
J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier
Mat. Sci. For. 3 (2015) 806 - Article de conférence
Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers
R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For. 821-823 (2015) 1003 - Article de conférence
Photoluminescence study of Be-acceptors in GaInNAs epilayers
Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A. Petrou
J. Appl. Phys.  117 (2015) 045705 - Papier régulier
3C-SiC: from electronic to MEMS devices
J.F. Michaud, M. Portail and D. Alquier
Advanced Silicon Carbide Devices and Processing  Edited by E. Saddow and F. La Via (2015) Intech, ISBN 978-953-51-2168-8 - Livres et chapitres de livres
Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect
R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud
Mat. Sci. For. 821-823 (2015) 978 - Article de conférence
Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques
G. Liaugaudas, D. Dargis, P. Kwasnicki, R. Arvinte, M. Zielinski, K. Jarašiūnas
J. Phys. D: Appl. Phys. 48 (2015) 025103 - Papier régulier
Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers
R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For. 821-823 (2015) 149 - Article de conférence
The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures
D. Rosales, H.T. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattice Microst 76 (2014) 9-15 - Papier régulier
Gallium Nitride as an electromechanical material
M. Rais-Zadeh, V. Gokhale, A. Ansari, M. Faucher, D. Theron, Y. Cordier, L. Buchaillot
IEEE J.MEMS 23 (2014) 1252-1271 - Papier régulier
Low loss GaN waveguides for visible light on Si Substrates
M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public. 9 (2014) 14050 - Papier régulier
Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth 404 (2014) 177-183 - Papier régulier
Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices
O. Arenas, É. Al Alam, A. Thevenot, Y. Cordier, A. Jaouad, V. Aimez, H. Maher, R. Arès and F. Boone
IEE JEDS 2 (2014) 145-148 - Papier régulier
Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications
S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
Mat. Sci. For. 806 (2014) 81-87 - Article de conférence
On the Correlation Between Kink Effect and Effective Mobility in InAlN/GaN HEMTs
P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquiere, J. De Jaeger, E. Frayssinet, Y. Cordier
Proceedings of the 9th European Microwave Integrated Circuit Conference  (2014) 88-91 - Article de conférence
Structural trends in Si dots formation on SiC surfaces using CVD environment
M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth 157 (2014) 404 - Papier régulier
Magnetic properties of Gd doped GaN
S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.W. Becker, D. Rogalla, and D. Reuter
Phys. Stat. Sol. B 251 (2014) 1673-1684 - Papier régulier
Selective area growth of GaN nanostructures: A key to produce high-quality (11-20) a-plane pseudo-substrates
S. Albert, A. Bengoechea-Encabo, J. Zúñiga-Pérez, P. de Mierry, P. Val, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett. 105 (2014) 091902 - Papier régulier
Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates
N. Gogneau, A. Ben Gouider Trabelsi, M. Silly, M. Ridene, M. Portail, A. Michon, M. Oueslati, R. Belkhou, F. Sirotti, A. Ouerghi
Nanotechnology, Science and Applications 85 (2014) 7 - Papier régulier
Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy
R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier
J. Appl. Phys. 054304 (2014) 116 - Papier régulier
Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech. 29 (2014) 084001 - Papier invité
Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones
M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys. 116 (2014) 034308 - Papier régulier
Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers
J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett. 104 (2014) 241113 - Papier régulier
Magnetoresistance of disordered graphene: From low to high temperatures
B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Phys. Rev. B 90 (2014) 035423 - Papier régulier
Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells
M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers
IEEE PVSC  (2014) 0669-0673 - Article de conférence
Valence-band orbital character of CdO: A synchrotron-radiation photoelectron spectroscopy and density functional theory study
J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B 89 (2014) 165305 - Papier régulier
Rotated domain network in graphene on cubic-SiC(001)
A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov
Nanotechnology 25 (2014) 135605 - Papier régulier
Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films
Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth 398 (2014) 23 - Papier régulier
Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties
P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys. 115 (2014) 153504 - Papier régulier
Monolithic white light emitting diodes using a (Ga,In)N-based light converter
B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE 1G (2014) 8986 - Article de conférence - invité
Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy
Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau
J. Cryst. Growth 388 (2014) 35 - Papier régulier
Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties
S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano
Semicond. Sci. Tech. 29 (2014) 035016 - Papier régulier
Quantitative determination of compositional profiles using HAADF image simulations
R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa
Phys. Stat. Sol. C 11 (2014) 284 - Papier régulier
Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett. 104 (2014) 071912 - Papier régulier
Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing
B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel,
Phys. Rev. B 89 (2014) 085422 - Papier régulier
Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition
T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G.Ferro, H.B. Weber, M. Krieger
Mat. Sci. For. 778-780 (2014) 261 - Article de conférence
Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO
J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D. Hesp, J.M. Kahk, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B 89 (2014) 035203 - Papier régulier
Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE 8986 (2014) 89860Z - Article de conférence
AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications
P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Tech. 29 (2014) 115018 - Papier régulier
GaN/AlGaN superlattices for p contacts in LEDs
J.Y. Duboz
Semicond. Sci. Tech. 29 (2014) 035017 - Papier régulier
Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application
A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A 211 (2014) 1655-1659 - Papier régulier
Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder
W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault
Eur. Phys. J. Appl. Phys. 68 (2014) 20102 - Papier régulier
GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers
Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C 3-4 (2014) 498-501 - Article de conférence
Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature
A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gruzinskis
Lithuanian Journal of Physics 54 (2014) 58-62 - Papier régulier
Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films
F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth 404 (2014) 146-151 - Papier régulier
Selective area growth and charcaterization of GaN nanocolumns, with and without an InGaN insertion, on semipolar (11-22) GaN templates
A. Bengoechea-Encabo, S. Albert, J. Zúñiga-Pérez, P. de Mierry, A. Trampert, F. Barbagini, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett. 103 (2013) 241905 - Papier régulier
Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates
J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter
Appl. Phys. Lett. 103 (2013) 262104 - Papier régulier
Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source
C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M. J. Rashid, and F. Semond
Optics Letters 38 (2013) 5059 - Papier régulier
Optimization of Al0.29Ga0.71N//GaN High Electron Mobility Transistor heterostructures for high power/frequency performances
S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
IEEE Transactions on Electron Devices 60 (2013) 3105 - Papier régulier
Chapter 11: Nitride-based electron devices for high-power/high-frequency applications
Y. Cordier, T. Fujishima, B. Lu, E. Matioli, and T. Palacios
III Nitride Semiconductors and their Modern Devices 1 (2013) 366 - Livres et chapitres de livres
Strain evolution in GaN nanowires: from free-surface objects to coalesced templates
M. Hugues, P.A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur, M. Cooke, M. Dineen, A. Di Carlo, D.W.E. Allsopp, and J. Zúñiga-Pérez
J. Appl. Phys. 114 (2013) 084307 - Papier régulier
Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology
A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, E. Okada, M. Chmielowska, M.R. Ramdani and J.C. De Jaeger
Semicond. Sci. Tech. 28 (2013) 094003 - Papier régulier
Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter
B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express. 6 (2013) 092105 - Papier régulier
Excitons in nitride heterostructures: From zero- to one-dimensional behavior
D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B 88 (2013) 125437 - Papier régulier
On the growth of Zn1–xMnxO thin films by plasma-assisted MBE
C. Deparis, C. Morhain, J. Zúñiga-Pérez, J.M. Chauveau, H. Kim-Chauveau, P. Vennéguès, M. Teisseire, B. Vinter
Phys. Stat. Sol. C 10 (2013) 1322 - Article de conférence
Plasmon energy from strained GaN quantum wells
M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken
Appl. Phys. Lett. 103 (2013) 021901 - Papier régulier
GaN doped with beryllium—An effective light converter for white light emitting diodes
H. Teisseyre, M. Bockowski, I. Grzegory, A. Kozanecki, B. Damilano, Y. Zhydachevskii, M. Kunzer, K. Holc, and U.T. Schwarz
Appl. Phys. Lett. 103 (2013) 011107 - Papier régulier
Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano.
Appl. Phys. Lett. 103 (2013) 032102 - Papier régulier
Magnetotransport studies of AlGaN/GaN heterostructures with 2 two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination
W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, and Y. Cordier
J. Appl. Phys. 114 (2013) 023704 - Papier régulier
Probing the nature of carrier localization in GaInNAs epilayers by optical methods
Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou
Appl. Phys. Lett. 103 (2013) 012104 - Papier régulier
Fabrication and characterization of a room-temperature ZnO polariton laser
F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, and J. Zúñiga-Pérez
Appl. Phys. Lett. 102 (2013) 191118 - Papier régulier
Temperature-dependent optical properties of epitaxial CdO thin films determined by spectroscopic ellipsometry and Raman scattering
S.G. Choi, L.M. Gedvilas, S.Y. Hwang, T.J. Kim, Y.D. Kim, J. Zúñiga-Pérez, and V. Munoz-Sanjosé
J. Appl. Phys. 113 (2013) 183515 - Papier régulier
From excitonic to photonic polariton condensate in a ZnO-based microcavity
F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. Lett. 110 (2013) 196406 - Papier régulier
AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission
J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys. 52 (2013) 08JG01 - Papier régulier
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier
J. Appl. Phys. 113 (2013) 174501 - Papier régulier
Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys. 113 (2013) 203501 - Papier régulier
Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz
A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, M. Rousseau, M. Chmielowska, M. Ramdani, and J.C. De Jaeger
IEEE Electron Devices Letters 34 (2013) 490 - Papier régulier
Terahertz transmission and effective gain measurement of two-dimensional electron gas
R. Sharma, T. Laurent, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Phys. Stat. Sol. A 210 (2013) 1454 - Papier régulier
Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M.P. Chauvat, P. Ruterana, G. Nataf, P. De Mierry, E. Monroy, and F.H. Julien
J. Appl. Phys. 113 (2013) 143109 - Papier régulier
Blue Light-Emitting Diodes Grown on ZnO Substrates
Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau
Appl. Phys. Express 6 (2013) 042101 - Papier régulier
High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy
R. Oliva, J. Ibañez, L. Artus, R. Cusco, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys. 113 (2013) 053514 - Papier régulier
AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy
S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A 210 (2013) 480-483 - Papier régulier
Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates
N. Defrance, F. Lecourt, Y. Douvry, M. Lesecq, V. Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger
IEEE Transactions on Electron Devices 60 (2013) 1054 - Papier régulier
Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier
Appl. Phys. Lett. 102 (2013) 093503 - Papier régulier
Room temperature generation of THz radiation in GaN quantum wells structures
A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knapb, Y. Cordier, S. Chenot, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis
Proceedings SPIE 8624 (2013) 862409 - Article de conférence
Imaging and counting threading dislocations in c-oriented epitaxial GaN layers
M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech. 28 (2013) 035006 - Papier régulier
Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons
R. Messina, J.P. Hugonin, J.J. Greffet, F. Marquier, Y. De Wilde, A. Belarouci, L. Frechette, Y. Cordier and P. Ben-Abdallah
Phys. Rev. B 87 (2013) 085421 - Papier régulier
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth 363 (2013) 282 - Papier régulier
On the interplay of point defects and Cd in non-polar ZnCdO films
A. Zubiaga, F. Reurings, F. Tuomisto, F. Plazaola, J.A. García, A.Yu. Kuznetsov, W. Egger, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys. 113 (2013) 023512 - Papier régulier
Temperature dependence of the direct bandgap and transport properties of CdO
S.K. Vasheghani Farahani, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, C.F. McConville, and T.D. Veal
Appl. Phys. Lett. 102 (2013) 022102 - Papier régulier
Role of magnetic polarons in ferromagnetic GdN
F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B 87 (2013) 035202 - Papier régulier
X-ray diffraction and Raman spectroscopy study of strain in graphene films grown on 6H-SiC(0001) using propane-hydrogen-argon CVD
A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For. 740-742 (2013) 117 - Article de conférence
Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons
J.H. Buss, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hagele
Appl. Phys. Lett. 103 (2013) 092401 - Papier régulier
Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy
N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies
J. Appl. Phys. 114 (2013) 053505 - Papier régulier
Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors
A. Perez-Tomas, A. Fontserè, S. Sanchez, M.R. Jennings, P.M. Gammon, and Y. Cordier
Appl. Phys. Lett. 102 (2013) 023511 - Papier régulier
Advanced photonic and nanophotonic devices, III-nitride semiconductors and their modern devices, éditeur B. Gil, Oxford University Press
J.Y. Duboz
OUP 10 (2013) 330-365 - Livres et chapitres de livres
Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate
J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Microelec. Engineering 105 (2013) 65 - Papier régulier
Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy
E. Gür, G. Tabares, A. Arehart, J.M. Chauveau, A. Hierro, and S.A. Ringel
J. Appl. Phys. 112 (2012) 123709 - Papier régulier
Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate
T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C 10 (2012) 425 - Article de conférence
On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
P. Vennéguès, J.M. Chauveau, Z. Bougrioua, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys. 112 (2012) 113518 - Papier régulier
Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
ECS Solid State Letters 2 (2012) p4 - Papier régulier
Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 )
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Mat. Sci. Eng. B 52 (2012) 2547-2550 - Papier régulier
Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1)
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Microelectronics Reliability 52 (2012) 2547 - Papier régulier
Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance
A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
Semicond. Sci. Tech. 27 (2012) 125010 - Papier régulier
Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria,
Nanotechnology 23 (2012) 395204 - Papier régulier
Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen
P. Muret, D. Tainoff, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett. 101 (2012) 122104 - Papier régulier
Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon
F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux
Superlattice Microst 52 (2012) 541 - Papier régulier
Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates
M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics 75 (2012) 86-92 - Papier régulier
Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
A. Bengoechea-Encabo, S. Albert, M. A. Sanchez-Garcia, L.L. Lopez, S. Estradé, J.M. Rebled, E. Peiro, G. Nataf, P. de Mierry, J. Zúñiga-Pérez, and E. Calleja
J. Cryst. Growth 353 (2012) 1-4 - Papier régulier
Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria
Appl. Phys. Lett. 101 (2012) 093505 - Papier régulier
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters
P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson
J. Cryst. Growth 353 (2012) 108 - Papier régulier
GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes
P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express 20 (2012) 18707 - Papier régulier
Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots
J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings 1566 (2012) 73 - Article de conférence
From strong to weak coupling regime in a single GaN microwire up to room temperature
A. Trichet, F. Médard, J. Zúñiga-Pérez, B. Alloing and M. Richard
New J. Phys. 14 (2012) 073004 - Papier régulier
Non-linear emission properties of ZnO microcavities
T. Guillet, C. Brimont, P. Valvin, B. Gil, T. Bretagnon, F. Medard, M. Mihailovic, J. Zuniga-Perez, F. Semond, S. Bouchoule
Phys. Stat. Sol. C 9 (2012) 1225 - Article de conférence - invité
High quality factor AlN nanocavities embedded in a photonic crystal waveguide
D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M.J. Rashid, F. Semond, J.Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud
Appl. Phys. Lett. 100 (2012) 191104 - Papier régulier
CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For. 717-720 (2012) 621 - Article de conférence
Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)
A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For. 717-720 (2012) 625 - Article de conférence
Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth 349 (2012) 27 - Papier régulier
Optical investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
L. Béaur, T. Bretagnon, B. Gil, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire and J.M. Chauveau
Phys. Stat. Sol. C 9 (2012) 1320 - Article de conférence
LO-phonon-assisted polariton lasing in a ZnO-based microcavity
L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet
Phys. Rev. B 85 (2012) 121201 - Papier régulier
Fabrication and properties of etched GaN nanorods
P. Shields, M. Hugues, J. Zúñiga-Pérez, M. Cooke, M. Dineen, W. Wang, F. Causa, and D. Allsopp
Phys. Stat. Sol. C 9 (2012) 631 - Article de conférence
Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation
M. Korytov, J.A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.L. Rouvière, and P. Vennégués
J. Appl. Phys. 111 (2012) 084309 - Papier régulier
A graphene electron lens
L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken
Appl. Phys. Lett. 100 (2012) 153106 - Papier régulier
Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon
M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys. 111 (2012) 053507 - Papier régulier
A new approach for AFM cantilever elaboration with 3C-SiC
S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier
Materials Letters  77 (2012) 54 - Papier régulier
Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure
B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz
Phys. Stat. Sol. C 9 (2012) 931 - Article de conférence
Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV
L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys. 111 (2012) 023511 - Papier régulier
Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX 5 (2012) 025504 - Papier régulier
Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations
P. Vennéguès
Semicond. Sci. Tech. 27 (2012) 024004 - Papier régulier
Fabrication and growth of GaN-based micro and nanostructures
B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez
Int. J. of Nanotechnology 9 (2012) 412-427 - Papier invité
Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A 209 (2012) 465 - Papier régulier
Graphene/SiC interface control using propane-hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)
A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For. 711 (2012) 253 - Article de conférence
Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC
J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For. 711 (2012) 179 - Article de conférence
Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si
X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Mat. Sci. For. 711 (2012) 154 - Article de conférence
Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers
S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For. 711 (2012) 84 - Article de conférence
Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition
S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier
Mat. Sci. For. 711 (2012) 61 - Article de conférence
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth 338 (2012) 20 - Papier régulier
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
A. Redondo-Cubero , A. Hierro , J.M. Chauveau , K. Lorenz , G. Tabares , N. Franco , E. Alves and E. Muñoz
CrystEngComm 14 (2012) 1637 - Papier régulier
High quality factor photonic resonators for nitride quantum dots
T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud
Phys. Stat. Sol. B 249 (2012) 449 - Papier régulier
Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)
D.H. Rich, O. Moshe, B. Damilano, and J. Massies
Phys. Stat. Sol. C 9 (2012) 1011 - Article de conférence
Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process
E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird
Mat. Sci. For. 711 (2012) 228-232 - Article de conférence
Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, Y. Cordier, and J.C. De Jaeger
Phys. Stat. Sol. C 9 (2012) 1083-1087 - Article de conférence
Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib
Phys. Stat. Sol. C 9 (2012) 523-526 - Article de conférence
Electromechanical Transconductance Properties of a GaN MEMS Resonator with fully integrated HEMT Transducers
M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, C. Gaquière and D. Théron
JMEMS 21 (2012) 370-378 - Papier régulier
Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC
X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Nucl. Instr. and Method Phys. Research B 269 (2011) 2020 - Papier régulier
Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy
Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau
Appl. Phys. Lett. 99 (2011) 261910 - Papier régulier
Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses
D. H. Rich, O. Moshe, B. Damilano and J. Massies
AIP. Proceedings 1399 (2011) 453 - Article de conférence
Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain
A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C 9 (2011) 175-178 - Article de conférence
Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D. H. Rich, B. Damilano, and J. Massies
J. Phys. Cond. Mat. 44 (2011) 505101 - Papier régulier
Hybrid cavity polaritons in a ZnO-perovskite microcavity
G. Lanty, S. Zhang, J.S. Lauret, E. Deleporte, P. Audebert, S. Bouchoule, X. Lafosse, J. Zúñiga-Pérez, F. Semond, D. Lagarde, F. Médard, and J. Leymarie
Phys. Rev. B 84 (2011) 195449 - Papier régulier
AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range
P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett. 32 (2011) 1561 - Papier régulier
Polariton lasing in a hybrid bulk ZnO microcavity
T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett. 99 (2011) 161104 - Papier régulier
Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría
Appl. Phys. Lett. 99 (2011) 213504 - Papier régulier
Nanopendeo coalescence overgrowth of GaN on etched nanorod array
P. Shields, C. Liu, A. Šatka, A. Trampert, J. Zúñiga-Pérez, B. Alloing, D. Haško, F. Uherek, W. Wang, F. Causa, D. Allsopp
Phys. Stat. Sol. C 8 (2011) 2334 - Article de conférence
Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition
M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Cryst. Growth 328 (2011) 13 - Papier régulier
GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range
A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys. 110 (2011) 084318 - Papier régulier
Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
L. Béaur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.M. Chauveau
Phys. Rev. B 84 (2011) 165312 - Papier régulier
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings
Microelectronic Engineering 88 (10) (2011) 3140 - Papier régulier
Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
G. Tabares, A. Hierro, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett. 99 (2011) 071108 - Papier régulier
Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap
Appl. Phys. Lett. 99 (2011) 082101 - Papier régulier
Thermal effects in AlGaN/GaN/Si high electron mobility transistors
I. Saidi, Y. Cordier, M. Chmielowska, H. Mejri and H. Maaref
Solid State Electronics 61 (2011) 1-6 - Papier régulier
High quality factor of AlN microdisks embedding GaN quantum dot
M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Phys. Stat. Sol. C 8 (2011) 2328 - Article de conférence
RF Performance of AlGaN/GaN High Electron Mobility Transistors grown on Silicon (110)
D. Marti, C.R. Bolognesi, Y. Cordier, M. Chmielowska, M. Ramdani
Applied Physics Express 4 (2011) 064105 - Papier régulier
Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime
L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet
Appl. Phys. Express 4 (2011) 072001 - Papier régulier
Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes
R. Charash, H. Kim-Chauveau, A. Vajpeyi, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, J.Y. Duboz, and B. Corbett
Phys. Stat. Sol. C 8 (2011) 2378 - Article de conférence
High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots
M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Optics Letters 36 (2011) 2203-2205 - Papier régulier
AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud
Appl. Phys. Lett. 98 (2011) 261106 - Papier régulier
GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth
S. Vézian, B. Alloing and J. Zúñiga-Pérez
J. Cryst. Growth 323 (2011) 326 - Article de conférence
Laser emission with excitonic gain in a ZnO planar microcavity
T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett. 98 (2011) 211105 - Papier régulier
Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett. 98 (2011) 141104 - Papier régulier
Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces
E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
J. Appl. Phys. 109 (2011) 084511 - Papier régulier
Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy
D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett. 98 (2011) 131915 - Papier régulier
Electron mobility in CdO films
S.K. Vasheghani Farahani, T.D. Veal, P.D.C. King, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
J. Appl. Phys. 109 (2011) 073712 - Papier régulier
Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells
J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Morhain, C. Deparis, and B. Vinter
J. Appl. Phys. 109 (2011) 102420 - Article de conférence - invité
Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy
E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard
Phys. Stat. Sol. C 8 (2011) 1479-1482 - Article de conférence
Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates
L. Béaur, T. Bretagnon, C. Brimont, T. Guillet, B. Gil, D. Tainoff, M. Teisseire and J.M. Chauveau
Appl. Phys. Lett. 98 (2011) 101913 - Papier régulier
Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties
S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys. 109 (2011) 053514 - Papier régulier
Comparison of Fe and Si doping of GaN: An EXAFS and Raman study
M. Katsikini, F. Pinakidoua, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, and T.D. Moustakas
Mat. Sci. Eng. B 176 (2011) 723 - Papier régulier
Growth of GaN based structures on focused ion beam patterned templates
Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.Y. Lo, Y.Y. Hu, A. Ludwig, A.D. Wieck
Phys. Stat. Sol. C 8 (2011) 1516–1519 - Article de conférence
Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
O. Moshe, D.H. Rich, B. Damilano, and J. Massies
Appl. Phys. Lett. 98 (2011) 061903 - Papier régulier
Determination of defect content and defect profile in semiconductor heterostructures
A. Zubiaga, J. A. Garcia, F. Plazaola, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Phys.: Conf. Ser. 265 (2011) 012004 - Article de conférence
The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates
H. Kim-Chauveau, P. de Mierry, J.M. Chauveau and J.Y. Duboz
J. Cryst. Growth 316 (2011) 30 - Papier régulier
Measurement of Pulsed Current–Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, and B. Beaumont
Acta Physica Polonica A 119 (2011) 196-198 - Article de conférence
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies
M. Lange, C. P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. A 29 (2011) 03A104 - Article de conférence
Ohmic Contact Resistance dependence on Temperature for GaN devices
A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings
Mat. Sci. For. 679-680 (2011) 816-819 - Article de conférence
On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett. 98 (2011) 011914 - Papier régulier
Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov and V. Gruzinskis
Acta Physica Polonica A 119 (2011) 107-110 - Article de conférence
Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
J. Cryst. Growth 314 (2011) 85-91 - Papier régulier
Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime
J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B 84 (2011) 153202 - Papier régulier
Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments
X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For. 679-680 (2011) 193 - Article de conférence
Analytical model of stress relaxation in 3C-SiC layers on silicon
M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For. 679-680 (2011) 79 - Article de conférence
Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers
A. ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla
Phys. Rev. B 83 (2011) 205429 - Papier régulier
Epitaxial growth of GdN on silicon substrate using an AlN buffer layer
F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth 312 (2010) 3583 - Papier régulier
Study of the epitaxial relationships between III-nitrides and M-plane sapphire
P. Vennéguès, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys. 108 (2010) 113521 - Papier régulier
Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett. 97 (2010) 171909 - Papier régulier
Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties
A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti
Phys. Rev. B 82 (2010) 125445 - Papier régulier
X-ray detectors based on GaN Schottky diodes
J.Y. Duboz, E. Frayssinet, S. Chenot, J.L. Reverchon, M. Idir
Appl. Phys. Lett. 97 (2010) 163504 - Papier régulier
Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on r-plane sapphire from 0.74 to 6.45 eV
S.G. Choi, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, A.G. Norman, C.L. Perkins, and D.H. Levi
J. Vac. Sci. Technol. B 28 (2010) 1120 - Papier régulier
Blue-green and white color tuning of monolithic light emitting diodes
B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys. 108 (2010) 073115 - Papier régulier
Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies
J. Appl. Phys. 108 (2010) 083510 - Papier régulier
Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111)
A. Ouerghi, R. Belkhou, M. Marangolo, M.G. Silly, S. El Moussaoui, M. Eddrief, L. Travers, M. Portail, F. Sirotti
Appl. Phys. Lett. 97 (2010) 161905 - Papier régulier
Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth 312 - n° 19 (2010) 2683-2688 - Papier régulier
Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth
N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett. 5 (2010) 1878 - Article de conférence
Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy
N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry
J. Cryst. Growth 312 (2010) 2625 - Papier régulier
Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities
F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule
J. Appl. Phys. 108 (2010) 043508 - Papier régulier
External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, and J. Massies
J. Appl. Phys. 108 (2010) 033104 - Papier régulier
Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots
J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault
Appl. Phys. Lett. 97 (2010) 061905 - Papier régulier
Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates
J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett. 97 (2010) 081903 - Papier régulier
Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes
M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron 46 (2010) 1058 - Papier régulier
Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses
O. Moshe, D.H. Rich, B. Damilano and J. Massies
J. Vac. Sci.Technol.B 28 (2010) C5E25 - Papier régulier
Photoemission of Si 1s --> 2pz transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection
T. Antoni, M. Carras, X. Marcadet, B. Vinter, and V. Berger
Appl. Phys. Lett. 97 (2010) 042102-3 - Papier régulier
Electrical behaviour of lateral Al/n-GaN/Al structures
Z.J. Horvath, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pecza
App. Surf. Science 256 (2010) 5614 - Article de conférence
AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz
J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices 57 (2010) 1497-1503 - Papier régulier
Surface band-gap narrowing in quantized electron accumulation layers
P.D.C. King, T.D. Veal, C.F. McConville, J. Zúñiga-Pérez, V. Munõz-Sanjosé, M. Hopkinson, E.D.L. Rienks, M. Fuglsang Jensen, and Ph. Hofmann
Phys. Rev. Lett. 104 (2010) 256803 - Papier régulier
Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
I. Gorczyca, A. Kaminska, G. Staszczak, R. Czernecki, S.P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butté, J.F. Carlin, E. Feltin, N. Grandjean, N.E. Christensen, and A. Svane
Phys. Rev. B 81 (2010) 235206 - Papier régulier
Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching
P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf
Appl. Phys. Lett. 96 (2010) 231918 - Papier régulier
Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range
F. Lecourt, Y. Douvry, N. Defrance, V. Hoel, Y. Cordier, J.C. De Jaeger
proceedings of the 5th European Microwave Integrated Circuits Conference 2010 (2010) 33-36 - Article de conférence
In-clustering effects in InAIN and InGaN revealed by high pressure studies
I. Gorczyca, T. Suski, A. Kaminska, G. Staszczak, H.P.D. Schenk, N.E. Christensen, A. Svane
Phys. Stat. Sol. A 207 (2010) 1369 - Article de conférence
Whispering gallery modes in zinc oxide micro- and nanowires
C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann
Phys. Stat. Sol. B 247 (2010) 1282 - Papier régulier
Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN
J. Pedros, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua
Appl. Phys. Lett. 96 (2010) 123505 - Papier régulier
Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission
Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C 1-3 (2010) 200983426 - Article de conférence
Luminescence properties of ZnO/Zn1-xCdxO/ZnO double heterostructures
M. Lange, C.P. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Appl. Phys. 107 (2010) 093530 - Papier régulier
Epitaxial graphene on Cubic SiC(111)/Si(111) substrate
A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski
Appl. Phys. Lett. 96 (2010) 191910 - Papier régulier
Two-dimensional confined photonic wire resonators: strong light-metter coupling
R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinlander, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, and M. Grundmann
Phys. Stat. Sol. B 247 (2010) 1351 - Papier régulier
Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation
A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne, M. Portail, M. Zielinski, E. Collard, D. Alquier
Mat. Sci. Eng. B 171 (2010) 120 - Papier régulier
Temperature dependence of electron spin relaxation in bulk GaN
J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Phys. Rev. B 81 (2010) 155216 - Papier régulier
Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure of Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy
P. Vennéguès, S. Founta, H. Mariette, and B. Daudin
Jpn. J. Appl. Phys. 49 (2010) 040201 - Papier régulier
Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers
M. Carras, G. Maisons. B. Simozrag, M. Garcia, O. Parillaud, J. Massies, X. Marcadet
Appl. Phys. Lett. 96 (2010) 161105 - Papier régulier
Evidence of electrical activity of extended defects in 3C-SiC grown on Si
X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Appl. Phys. Lett. 96 (2010) 142104 - Papier régulier
Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy
R. Cusco, J. Ibanez, N. Domenech-Amador, L. Artus, J. Zúñiga-Pérez, and V. Munoz-Sanjose
J. Appl. Phys. 107 (2010) 063519 - Papier régulier
Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results
F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule
J. Phys.: Conf. Ser. 210 (2010) 012026 - Article de conférence
Tuning the lateral density of ZnO nanowires arrays and its applications as physical templates for radial nanowire heterostructures
B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, and M. Grundmann
J. Mater. Chem. 20 (2010) 3848 - Papier régulier
GaN quantum dots in (Al,Ga)N-based Microdisks
S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond
J. Phys.: Conf. Ser. 210 (2010) 012005 - Article de conférence
Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates
P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett. 46 (2010) 240 - Papier régulier
Self-organized growth of ZnO-based nano- and microstructures
M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann
Phys. Stat. Sol. B 247 (2010) 1265 - Papier régulier
Recent advances in surface preparation of silicon carbide and other wide band gap materials
M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail
Mat. Sci. For. 645-648 (2010) 753-758 - Article de conférence - invité
SiC on SOI resonators: a route for electrically driven MEMS in harsh environment
M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal, T. Chassagne, M. Zielinski
Mat. Sci. For. 645-648 (2010) 845-848 - Article de conférence
Thermally induced surface reorganization of 3C-SiC(111) epilayers grown on silicon substrates
M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski
Mat. Sci. For. 645-648 (2010) 155-158 - Article de conférence
Micromachining of thin 3C-SiC films for mechanical properties investigation
J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Mater. Res. Soc. Symp. Proc.  1246 (2010) B09-04 - Article de conférence
Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding
R. Charash, H. Kim-Chauveau, J.M. Lamy, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J.Y. Duboz, A. Hangleiter and B. Corbett
Appl. Phys. Lett. 98 (2010) 201112 - Papier régulier
Deposited thin SiO2 for gate oxide on n-type and p-type GaN
M. Placidi, A. Constant, A. Fontserè, E. Pausas, I. Cortes, Y. Cordier, N. Mestres, R. Pérez, M.Zabala, J. Millán, P. Godignon and A. Pérez-Tomás
Journal of the Electrochemical Society 157 (2010) H1008-H1013 - Papier régulier
2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon
Mat. Sci. For. 645-648 (2010) 1207-1210 - Article de conférence
Comparison of GaN-Based MOS Structures with Different Interfacial Layer Treatments
E. Al Alam, I. Cortes, M. P. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazzare, Y. Cordier, K. Isoird, F. Olivié
Proceedings of the 27th conference on microelectronics  2010 (2010) 459 - Article de conférence
High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature
A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier
AIP Conf Proc 1292 (2010) 51 - Article de conférence
Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon
S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier
AIP Conf Proc 1292 (2010) 15 - Article de conférence
Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses
M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc 1292 (2010) 115 - Article de conférence
Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski
Mat. Sci. For. 645-648 (2010) 585-588 - Article de conférence
Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance
Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique 10 (2009) 73-77 - Article de conférence
Anisotropic electron spin relaxation in bulk GaN
J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Appl. Phys. Lett. 95 (2009) 192107 - Papier régulier
Backside illuminated GaN on Si Schottky photodiode for UV radiation detection
P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett. 30 (2009) 1308 - Papier régulier
Phase separation in GaN/AlGaN quantum dots
M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès
Appl. Phys. Lett. 95 (2009) 141901 - Papier régulier
Interfacial properties of AlN and oxidized AlN on Si
M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán.
surface science 604 (2009) 63 - Papier régulier
Single-ion anisotropy in Mn-doped diluted magnetic semiconductors
A. Savoyant, A. Stepanov, R. Kuzian, C. Deparis, C. Morhain, and K. Grasza
Phys. Rev. B 80 (2009) 115203 - Papier régulier
Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule
Appl. Phys. Lett. 95 (2009) 121102 - Papier régulier
In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates
P. Vennéguès, T. Zhu, Z. Bougrioua, D. Martin, J. Zúñiga-Pérez, and N. Grandjean
Jpn. J. Appl. Phys. 48 (2009) 090211 - Papier régulier
Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms
F. Reveret, P. Disseix, J. Leymarie, F. Semond F et al.
Solid State Com. 150 (2009) 122 - Papier régulier
First demonstration and performance of AlGaN based focal plane array for deep-UV imaging
J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings 7474 (2009) 74741G - Article de conférence
Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions
S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett. 95 (2009) 081903 - Papier régulier
Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers
M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al-Suleiman, A. El-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, H.S. Kwack, J. Gu
Nanotechnology 20 (2009) 332001 - Papier régulier
Al and Ti/Al contacts on n-GaN
L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua
Vacuum 84 (2009) 228 - Article de conférence
Perturbing GaN/AlN quantum dots with uniaxial stressors
Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
Phys. Stat. Sol. C 6 (2009) 1432 - Article de conférence
Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers
M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C 6 (2009) 1424 - Article de conférence
Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy
P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf
Appl. Phys. Lett. 94 (2009) 191903 - Papier régulier
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev
J. Appl. Phys. 105 (2009) 073703 - Papier régulier
Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates.
P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf
Jpn. J. Appl. Phys. 48 (2009) 031002 - Papier régulier
Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors
N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C 6 - S2 (2009) 715-718 - Article de conférence
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth 311 (2009) 2002-2005 - Article de conférence
Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B 79 (2009) 035328 - Papier régulier
Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
F. Natali, Y. Cordier, C. Chaix, P. Bouchaib
J. Cryst. Growth 311 (2009) 2029-2032 - Article de conférence
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys. 105 (2009) 033701 - Papier régulier
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein
J. Stat. Mech. 1 (2009) P01046 - Papier régulier
Epitaxial aluminium nitride on patterned silicon
J. Moreno, E. Frayssinet, F. Semond et al.
Materials Science in Semicond. Processing 12 (2009) 31 - Article de conférence
Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing 12 (2009) 16-20 - Article de conférence
AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C 6 - S2 (2009) 1020-1023 - Article de conférence
Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet
J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EAS Publications Series  (2009) - Article de conférence
GaN transistor characteristics at elevated temperatures
A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán
J. Appl. Phys. 106 (2009) 074519 - Papier régulier
(Zn, Mg)O/ZnO based heterostructures grown by molecular beam epitaxy on sapphire: polar vs non-polar
J.M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zúñiga-Pérez, and B. Vinter
Microelectronics Journal 40 (2009) 512 - Article de conférence - invité
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
P.D.C. King, T.D. Veal, P.H. Jefferson, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
Phys. Rev. B 79 (2009) 035203 - Papier régulier
Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For. 600-603 (2009) 1277-1280 - Article de conférence
Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)
Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C 6 - S2 (2009) 1016-1019 - Article de conférence
Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahrèche , P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, C. Gaquière, and D. Théron
Appl. Phys. Lett. 94 (2009) 233506 - Papier régulier
Anomalous photoresponse of GaN X-ray Schottky detectors
J.Y. Duboz, B. Beaumont, J.L. Reverchon and A.D. Wieck
J. Appl. Phys. 105 (2009) 114512 - Papier régulier
AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?
A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth 311 (2009) 3278 - Papier régulier
Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces
O. Copie, V. Garcia, C. Bödefeld, C. Carrétéro, M. Bibes, G. Herranz, E. Jacquet, J.L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffrès, and A. Barthélémy
Phys. Rev. Lett. 102 (2009) 216804-4 - Papier régulier
GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures
S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond
Applied Physics Express 2 (2009) 051003 - Papier régulier
Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities
F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux
Photonics and Nanostructures 7 (2009) 26 - Article de conférence
Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations
P.D.C. King, T.D. Veal, A. Schleife, J. Zúñiga-Pérez, B. Martel, P.H. Jefferson, F. Fuchs, V. Munoz-Sanjosé, F. Bechstedt, and C.F. McConville
Phys. Rev. B 79 (2009) 205205 - Papier régulier
Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga-Pérez, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. B 27 (2009) 1780 - Article de conférence
Recent ROB developments on wide bandgap based UV sensors
B. Giordanengo, A. Ben Moussa, J.F. Hochedez, A. Soltani, P. de Moor, K. Minouglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zhou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, and H.X. Jiang
EDP_EAS 37 (2009) 199 - Article de conférence
UV Imaging Based on AlGaN Arrays
J.Y. Duboz, J. Brault, J.P. Truffer, J.A. Robot, K. Robin, J.L. Reverchon
Phys. Stat. Sol. (c) S2 (2009) S611 - Article de conférence
Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet
J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EDP 37 (2009) 207 - Article de conférence
Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption
F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet
Phys. Rev. B 79 (2009) 125302 - Papier régulier
Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-weells
T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux
Proc. 29th Int. Conf. Physics of Seminconductors ICPS 1199 (2009) 191 - Article de conférence
Catalytic unzipping of carbon nanotubes to few-layer graphene sheets under microwaves irradiation
I. Janowska , O. Ersen , T. Jacob, P. Vennéguès, D. Bégin, M.J. Ledoux, C. Pham-Huu
Applied Catalysis A:General 371 (2009) 22-30 - Papier régulier
8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E.K. Polychroniadis and J. Camassel
Mat. Sci. For. 615-617 (2009) 339-342 - Article de conférence
Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
M. Marinova, T. Robert, S. Juillaguet, I. Tsiaoussis, N. Frangis, E. Polychroniadis, J. Camassel, T. Chassagne
Phys. Stat. Sol. A 206 (2009) 1924-1930 - Papier régulier
High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel, Y. Cordier
Mat. Sci. Eng. B 165-1-2 (2009) 1-4 - Article de conférence
Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires
B. Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, and M. Grundmann
Nanotechnology 20 (2009) 305701 - Papier régulier
Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells
T. Laurent, P. Nouvel, J. Torres, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, J.P. Faurie, B. Beaumont, E. Starikov, P. Shiktorov, V. Gruzinskis
Journal of Physics : Conference Series 193 (2009) 012094 - Article de conférence
Anomalous Hall Effect in Gd-Implanted Wurtzite AlxGa1-N-x/GaN High Electron Mobility Transistor Structures
F.Y Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck
Materials Research Society Symposium Proceedings 1111 (2009) 61-69 - Article de conférence
Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration
P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A 206 (2009) 371-374 - Papier régulier
Analysis of the C-V characteristic SiO2/GaN MOS capacitors
I. Cortes, E. Al-Alam, M.P. Besland, P. Regreny, F. Morancho, A. Cazarré, Y. Cordier, A. Goullet and K. Isoird
Proceedings 7th Spanish Conference on Electron Devices 7 (2009) 254-257 - Article de conférence
Infrared detectors based on InGaAsN/GaAs intersubband transitions
J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien
Appl. Phys. Lett. 94 (2009) 022103 - Papier régulier
Optical investigations of bulk and multi-quantum well nitride-based microcavities
F. Reveret, F. Medard, P. Disseix, F. Semond et al.
Optical Materials 31 (2009) 505 - Article de conférence
Substrates for III−Nitride−based Electroluminescent Diodes
P. de Mierry
LEDs for Lighting Applications Patrick Mottier (CEA, LETI), Editors ISTE Ltd (UK) (2009) 29-73 - Livres et chapitres de livres
Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds
E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez
Nanotechnology 20 (2009) 065701 - Papier régulier
Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy
M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès
Appl. Phys. Lett. 94 (2009) 143105 - Papier régulier
Comparison of GaN and ZnO epitaxial films for scintillator applications
H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, A. Dadgar, and A. Krost
J. Cryst. Growth 311 (2009) 3984 - Papier régulier
Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys. 105 (2009) 033519 - Papier régulier
Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy
M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mat. Sci. Eng. B 165 (2009) 42 - Papier régulier
Optical and excitonic properties of ZnO films
M. Mihailovic, A. L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D. A. Buell, F. Semond, C. Morhain, and J. Zúñiga-Pérez
Optical Matérials 31 (2009) 532 - Article de conférence
Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy
M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mat. Sci. Eng. B 165 (2009) 9 - Papier régulier
Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates
M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
J. Appl. Phys. 105 (2009) 083505 - Papier régulier
Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel
Mat. Sci. For. 615-617 (2009) 49 - Article de conférence
Development of thick GaN-on-silicon layers for rectifier applications
H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz
EWMOVPE-XIII D.14 (2009) 343-346 - Article de conférence - invité
Role of substrate misorientation in relaxation of 3C-SiC layers on silicon
M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Mat. Sci. For. 615-617 (2009) 169 - Article de conférence
Towards green lasing: ingredients for a green laser diode based on GaInN
A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter
Phys. Stat. Sol. (c) C6 (S2) (2009) 792 - Article de conférence
GaN/Al0.5Ga0.5N quantum dots and quantum dashes
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b) 246 (2009) 845-845 - Papier régulier
AlInN optical confinement layers for edge emitting group III-nitride laser structures
H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c) S2 (2009) 897 - Article de conférence
Highly sensitive strained AlN on Si(111) resonators
M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre
Sensors and Actuators A: Physical 150 (2008) 64-68 - Papier régulier
Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices
H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau
J. Cryst. Growth 311 (2008) 2091-2095 - Article de conférence
Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics
S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang
J. Cryst. Growth 311 (2008) 2087-2090 - Article de conférence
Performance of Unstuck Γ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10GHz
J.C. Gerbedoen, A.Soltani, N. Defrance, M. Rousseau, C. Gaquiere, J.C. De Jaeger, S. Joblot, Y. Cordier
European Microwave Integrated Circuits Conference 2008 (2008) 330-333 - Article de conférence
Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys 41 (2008) 155102 - Papier régulier
Mosaicity and stress effects on luminescence properties of GaN Mosaicity and stress effects on luminescence properties of GaN
A. Toure, A. Bchetnia, T.A. Lafford, Z.Benzarti, I. Halidou, Z. Bougrioua, B. El Jani
Phys. Stat. Sol. A 208 (2008) 2042 - Article de conférence
Magnesium diffusion profile in GaN grown by MOVPE
Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani
J. Cryst. Growth 310 (2008) 3274 - Papier régulier
Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities
K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond
Appl. Phys. Lett. 92 (2008) 241105 - Papier régulier
Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory
R. Bardoux, T. Guillet, B. Gil, P. Levebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B 77 (2008) 235315 - Papier régulier
Influence of the mirrors in the strong coupling regime in planar GaN microcavities
F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies
Phys. Rev. B 77 (2008) 195303 - Papier régulier
Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
M. Richter, D. Reuter, J.Y. Duboz, A.D. Wieck
PhysicaE 40 (2008) 1891 - Article de conférence
Structural and electrical properties of Au and Ti/Au contacts to n-type GaN
L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua
Vacuum 82 (2008) 794 - Papier régulier
Mechanism of mobility increase of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma irradiation
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N; Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev
J. Appl. Phys. 103 (2008) 083707 - Papier régulier
Residual strain in nonpolar a-plane Zn(1−x)MgxO (0< x <0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells
J.M. Chauveau, J. Vives, J. Zúñiga-Pérez, M. Laügt, M. Teisseire, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett. 93 (2008) 231911 - Papier régulier
Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C
L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron
Appl. Phys. Lett. 92 (2008) 043504 - Papier régulier
P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si
A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier
Mater. Res. Soc. Symp. Proc. 1068 (2008) 1068-C07-09 - Article de conférence
Thickness and substrate effects on AlN thin film growth at room temperature
B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
Eur. Phys. J. Appl. Phys. 43(3) (2008) 309-313 - Papier régulier
Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy
L.F.J. Piper, L. Colakerol, P.D.C. King, A. Schleife, J. Zúñiga-Pérez, P.A. Glans, T. Learmonth, A. Federov, T.D. Veal, F. Fuchs, V. Muñoz-Sanjosé, F. Bechstedt, C.F. McConville and K.E. Smith
Phys. Rev. B 78 (2008) 165127 - Papier régulier
In-plane anisotropy characteristics of GaN epilayers grown on A-face sapphire substrates
HJ. Kim-Chauveau, P. De Mierry, H. Cabane, and D. Gindhart
J. Appl. Phys. 104 (2008) 113516 - Papier régulier
Structural and optical properties of Zn(1-x)CdxO solid solutions grown on ZnO substrates by using MOCVD
A. Lusson, N. Hanèche, V. Sallet, P. Galtier, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, S. Agouram, J.A. Bastos Segura, E. Leroy
J. Kor. Phys. Soc. 53 (2008) 158 - Article de conférence
Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters 29 (2008) 1187-1189 - Papier régulier
Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode
T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf
Electron. Lett. 44 (2008) 231 - Papier régulier
Band gap narrowing and radiative efficiency of silicon doped GaN
H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, and D.H. Rich
J. Appl. Phys. 103 (2008) 103502 - Papier régulier
Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express 1 (2008) 121101 - Papier régulier
Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot wall reactor
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre
J. Cryst. Growth 310 (2008) 3174 - Papier régulier
Electronic structure of single-crystal rocksalt CdO studied by soft x-ray spectroscopies and ab initio calculations
L.F.J. Piper, A. DeMasi, K.E. Smith, A. Schleife, F. Fuchs, F. Bechstedt, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Phys. Rev. B 77 (2008) 125204 - Papier régulier
Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy
P. Vennéguès, J.M. Chauveau, M. Korytov, C. deparis, J. Zúñiga-Pérez, and C. Morhain
J. Appl. Phys. 103 (2008) 083525 - Papier régulier
High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates
R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c) 5 - n°6 (2008) 1971-1973 - Article de conférence
Blue-light emission from GaN/Al0.5Ga0.5N quantum dots
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett. 92 (2008) 051911 - Papier régulier
Interface structure and anisotropic strain relaxation of non polar wurtzite (11-20) and (10-10) orientations: ZnO epilayers grown on sapphire
J.M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Appl. Phys. 104 (2008) 073535 - Papier régulier
Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy
J.M. Chauveau, M. Laügt, P. Vennéguès, M. Teisseire, B. Lo, C. Deparis, C. Morhain, and B. Vinter
Semicond. Sci. Tech. 23 (3) (2008) 035005 - Papier régulier
Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities
K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond
Semicond. Sci. Tech. 8 (2008) 045008 - Papier régulier
Magnetotransport in Gd-implanted wurtzite GaN/AlxGa1−xN high electron mobility transistor structures
F.Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A.D. Wieck
Appl. Phys. Lett. 92 (2008) 112111 - Papier régulier
Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities
F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett. 92 (2008) 042119 - Papier régulier
High doping level in Mg-doped GaN layers grown at low temperature
A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys. 103 (2008) 013110 - Papier régulier
Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech. 23 (2008) 035020 - Papier régulier
Composition analysis of semiconductor quantum wells by energy filtered convergent beam electron diffraction
D. Jacob, J.M. Zuo, A. Lefebvre, Y. Cordier
Ultramicroscopy 108 (2008) 358–366 - Papier régulier
Growth and Characterization of Non-Polar (Zn,Mg)O/ZnO Quantum Wells and Multiple Quantum Wells
J.-M. Chauveau, B. Vinter, M. Laugt, M. Teisseire, P. Vennéguès, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Kor. Phys. Soc. 53(5) (2008) 2934 - Article de conférence
Bandgap and effective mass of epitaxial cadmium oxide
P.H. Jefferson, S.A. Hatfield, T.D. Veal, P.D.C. King, C.F. McConville, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Appl. Phys. Lett. 92 (2008) 022101 - Papier régulier
AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
J. Cryst. Growth 310 (2008) 4417–4423 - Papier régulier
Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN
O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, Y. André
Phys. Rev. B 77 (2008) 045206 - Papier régulier
Strong light-matter coupling in GaN-based microcavities grown on silicon substrates
F. Semond, I.R. Sellers, N. Ollier et al.
MRS proceedings 1068 (2008) 95-100 - Article de conférence
Les substrats pour les diodes électroluminescentes de type III−nitrures
P. de Mierry
Les diodes electroluminescentes pour l eclairage P. Mottier, Hermès, ISBN 978-2-7462-2097-3 (2008) 49−90 - Livres et chapitres de livres
Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity
F. Stokker-Cheregi, A. Vinattieri, M. Colocci, F. Semond et al.
Phys. Stat. Sol. C 5 (2008) 2257 - Article de conférence
Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
MRS Symposium Proceedings 1068 (2008) C04-05 - Article de conférence
Strong coupling in bulk GaN microcavities grown on silicon
F. Reveret, I.R. Sellers, P. Disseix, F. Semond et al.
Phys. Stat. Sol. C 4 (2008) 108-111 - Article de conférence
Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings 1068 (2008) 51-56 - Article de conférence
Dry etching of N-face GaN using two high-density plasma etch techniques
F. Rizzi, K. Bejtka, F. Semond et al.
Phys. Stat. Sol. C 4 (2008) 200-203 - Article de conférence
Molecular Beam Epitaxy of AlN Layers on Si (111)
J.C. Moreno, E. Frayssinet, F. Semond et al.
MRS symposium proceeding 1068 (2008) 141-145 - Article de conférence
Luminescence upconversion in GaAs quantum wells
S. Eshlaghi, W. Worthoff, A.D. Wieck, and D. Suter
Phys. Rev. B 77 (2008) 245317 - Papier régulier
Gallium Nitride: A Nanoscale Study Using Electron Microscopy and Associated techniques
M. Benaissa and P. Vennéguès
Sains Malaysiana 37(3) (2008) 255-259 - Article de conférence - invité
GaN for x-ray detection
J.Y. Duboz, M. Laügt, H.P.D. Schenk, B. Beaumont, J.L. Reverchon, A.D. Wieck, and T. Zimmerling
Appl. Phys. Lett. 92 (2008) 263501 - Papier régulier
Layer-by-layer epitaxial growth of Mg on GaN(0001)
S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett. 92 (2008) 23111 - Papier régulier
Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy
W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, and A.D. Wieck
Appl. Phys. Lett. 92 (2008) 193111 - Papier régulier
Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates
M. Portail, M. Nemoz, M. Zielinski, T. Chassagne
Mat. Sci. For. 600-603 (2008) 231 - Article de conférence
Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne
Phys. Stat. Sol. (c) 5, No. 6 (2008) 1983–1985 - Article de conférence
Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by Epitaxial Lateral Overgrowth on sapphire
T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux
Phys. Rev. B 77 (2008) 075308 - Papier régulier
Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN
H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter
Appl. Phys. Lett. 93 (2008) 081116 - Papier régulier
Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates
M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Mat. Sci. For. 600-603 (2008) 207-210 - Article de conférence
Symmetry of wurtzite nanostructures with the c-axis in the layer plane
P. Tronc and P. Vennéguès
Phys. Rev. B 77 (2008) 075336 - Papier régulier
Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth 310 (2008) 948 - Article de conférence
Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors
R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors  (2008) - Article de conférence
AlGaN photodetectors for applications in the extreme UV range
P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE  (2008) - Article de conférence
Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett. 90 (2008) 101117 - Papier régulier
Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
T.D. Veal, P.D.C. King, S.A. Hatfield, L.R. Bailey, C.F. McConville, B. Martel, J.C. Moreno, E. Frayssinet, F. Semond, and J. Zúñiga-Pérez
Appl. Phys. Lett. 93 (2008) 202108 - Papier régulier
Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates
M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier
Mater. Res. Soc. Symp. Proc. 1069 (2008) 1069-D07-09 - Article de conférence
Characterization of non-polar ZnO layers with positron annihilation spectroscopy
A. Zubiaga, F. Tuomisto, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Acta Physica Polonica A 114 (2008) 1457 - Article de conférence
Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding
S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli
J. Appl. Phys. 103 (2008) 123112 - Papier régulier
Comparison of GaInN laser structures grown on different substrates
A.D. Dräger, D. Fuhrmann, C. Netzel, U. Rossow, H.P.D. Schenk, and A. Hangleiter
Phys. Stat. Sol. (c) 5 (2008) 2277 - Article de conférence
Low electron mobility of field-effect transistor determined by modulated magnetoresistance
R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki
J. Appl. Phys. 102 (2007) 103701 - Papier régulier
AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging
J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz
SPIE procedings 6744 (2007) 674417 - Article de conférence
Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy
P. Muret, J. Pernot, M. Azize, Z. Bougrioua
J. Appl. Phys. 102 (2007) 053701 - Papier régulier
AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication
S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference 2007 (2007) 96-99 - Article de conférence
Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells
T. Guillet, T. Bretagnon, T. Taliercio, P. Lefebvre, B. Gil, C. Morhain, X.D. Tang
Superlattice Microst 41 (2007) 352 - Article de conférence
Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells
T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, C. Morhain
Appl. Phys. Lett. 90 (2007) 201912 - Papier régulier
Magnetic properties of single crystalline Zn1-xCoxO thin films
P. Sati, S. Schafer, C. Morhain, C. Deparis, A. Stepanov
Superlattice Microst 42 (2007) 191 - Article de conférence
Magnetotransport characterization of AlGaN/GaN interfaces
R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Phys. Stat. Sol. A 204 (2007) 586 - Article de conférence
InAs/AlAsSb based quantum cascade lasers
X. Marcadet, C. Renard, M. Carras, M. Garcia, J. Massies
Appl. Phys. Lett. 91 (2007) 161104 - Papier régulier
Polariton emission in GaN microcavities
M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst 41 (2007) 284 - Article de conférence
Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M.
M. Hugues, B. Damilano, J.Y. Duboz, J. Massies
Phys. Rev. B 75 (2007) 115337 - Papier régulier
Cathodoluminescence investigation of stacking faults extension in 4H-SiC
S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Phys. Stat. Sol. A 204 (2007) 2222-2228 - Papier régulier
Electric-field screening effects in the micro-photoluminescence spectra of as-grown stacking faults in 4H-SiC
S. Juillaguet, T. Guillet, R. Bardoux, J. Camassel and T. Chassagne
Mat. Sci. For. 556-557 (2007) 351-354 - Article de conférence
Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c) 4, n°7 (2007) 2670-2673 - Article de conférence
Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE
Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth 301-302 (2007) 434-436 - Article de conférence
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth 301-302 (2007) 71-74 - Article de conférence
Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations
T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz
J. Appl. Phys. 101 (2007) 073510 - Papier régulier
Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates
A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier
Mat. Sci. For. 556-557 (2007) 721 - Article de conférence
Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys 46 (2007) 12-16 - Papier régulier
Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns
Z. Bougrioua, P. Gibart, E. Calleja, A. Trampert, J. Ristic, M. Utrera, G. Nataf
J. Cryst. Growth 309 (2007) 113-120 - Papier régulier
Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain
J. Cryst. Growth 301-302 (2007) 366-9 - Article de conférence
Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
A. Soltani, A. BenMoussa, S. Touati, V. Hoël, J.C. De Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M.A. Djouadi, C. Dua
Diamond and Related Materials 16 (2007) 262–266 - Article de conférence
Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, and B. Damilano
Phys. Rev. B 75 (2007) 075306 - Papier régulier
Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers
A. Zubiaga, J.A. García, F. Plazaola, F. Tuomisto, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Phys. Rev. B 75 (2007) 205305 - Papier régulier
Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots
T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B 73(11) (2007) 113304-1-4 - Papier régulier
Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells
M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies
Phys. Rev. B 75 (2007) 045313 - Papier régulier
Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots
M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies
Phys. Rev. B 76 (7) (2007) 075335-6 - Papier régulier
AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification
S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES 54, No. 11 (2007) 2843-2848 - Papier régulier
Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu
Applied Physics A: Materials Science and Processing 88 (1) (2007) 65-9 - Article de conférence
Intersubband transitions in InGaAsN/AlGaAs quantum wells with a high confinement energy
J.Y. Duboz
Phys. Stat. Sol. (c) 7 (2007) 2391 - Article de conférence
Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer
F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond et al.
Superlattice Microst 41 (2007) 414-418 - Article de conférence
From evidence of strong light-matter coupling to polariton emission in GaN microcavities
I.R Sellers, F. Semond, M. Zamfirescu et al.
Phys. Stat. Sol. B 244 (2007) 1882-1886 - Article de conférence
Energy levels and intersubband transitions in InGaAsN/AlGaAs quantum wells
J.Y. Duboz
Phys. Rev. B 75 (2007) 045327 - Papier régulier
(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer
F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, and R.W. Martin
Appl. Phys. Lett. 90 (2007) 111112 - Papier régulier
Screening the built-in electric field in 4H silicon carbide stacking faults
S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Appl. Phys. Lett. 90 (2007) 111902 - Papier régulier
Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole
R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al.
Physics of semiconductors B893 (2007) 941-942 - Article de conférence
AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)
J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications 6585 (2007) 33-40 - Article de conférence
Deuterium Out-diffusion Kinetics in Magnesium-doped GaN
J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage
Mat. Res. Soc. Symp. Proc. 994 (2007) F03-22 - Article de conférence
Monolithic white light emitting diodes with a broad emission spectrum
A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c) 4, Issue 1 (2007) 57-60 - Article de conférence
X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy
C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé
Appl. Phys. A 88 (2007) 61 - Article de conférence
Formation and rupture of Schottky nanocontacts on ZnO nanocolumns
B. Pérez-García, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, J. Colchero, and E. Palacios-Lidón
Nano Letters 7 (2007) 1505 - Papier régulier
Antiferromagnetic Interactions in Single Crystalline Zn1-xCoxO Thin Films
P. Sati, C. Deparis, C. Morhain, S. Schafer, and A. Stepanov
Phys. Rev. Lett. 98 (13) (2007) 137204-4 - Papier régulier
Electron Scattering Spectroscopy by High Magnetic Field in Mid-Infrared Quantum Cascade Lasers
A. Leuliet, A. Wade, A. Vasanelli, G. Fedorov, D. Smirnov, M. Giovannini, J. Faist, G. Bastard, B. Vinter, and C. Sirtori
ICPS, AIP Conference Proceedings 893 (2007) 497-498 - Article de conférence
Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy
P. Vennéguès, Z. Bougrioua and T. Guehne
Jpn. J. Appl. Phys 46, n° 7A (2007) 4089 - Papier régulier
High indium content AlInGaN films: growth, structure and optoelectronic properties
M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c) 4, No. 1 (2007) 137-140 - Article de conférence
Energetically deep defect centers in vapor-phase grown zinc oxide
T. Frank, G. Pensl, R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás,V. Muñoz-Sanjosé, T. Ohshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann and B. Meyer
Appl. Phys. A 88 (2007) 141 - Article de conférence
Radiative lifetime in wurtzite GaN/AlN quantum dots
R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c) 4, Issue 1 (2007) 183-186 - Article de conférence
Nanoscale determination of surface orientation and electrostatic properties of ZnO thin films
J. Zúñiga-Pérez, E. Palacios-Lidón, V. Muñoz-Sanjosé, and J. Colchero
Appl. Phys. A 88 (2007) 77 - Article de conférence
Nanogoniometry with Scanning Force Microscopy: A Model Study of CdTe Thin Films
E. Palacios-Lidón, L. Guanter, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and J. Colchero
Small 3 (2007) 474 - Papier régulier
Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source
S. Vézian, A. Le Louarn and J. Massies
J. Cryst. Growth 303 (2007) 419 - Papier régulier
Ordered growth of tilted ZnO nanowires: morphological, structural and optical charcaterization
J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann
Nanotechnology 18 (2007) 195303 - Papier régulier
Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions
M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel
Phys. Stat. Sol. (a) 204 (2007) 981 - Article de conférence
Trends in nitrogen doping for 3C-SiC films on silicon
M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel
Mat. Sci. For. 556-557 (2007) 207 - Article de conférence
Structural and morphological characterization of ZnO films grown on GaAs substrates by MOCVD
S. Agouram, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
Appl. Phys. A 88 (2007) 83 - Article de conférence
Anisotropic morphology of nonpolar a-plane quantum dots and quantum wells
S. Founta, C. Bougerol, H. Mariette, B. Daudin and P. Vennéguès
J. Appl. Phys. 102 (2007) 074304 - Papier régulier
Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization
T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux
J. Appl. Phys. 101 (2007) 113101 - Papier régulier
X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)
L.F.J. Piper, P.H. Jefferson, T.D. Veal, C.F.C. McConville, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Superlattice Microst 42 (2007) 197 - Article de conférence
Fabrication of monocrystalline 3C-SiC resonators for MHz frequency applications
M. Placidi, P. Godignon, N. Mestres, G. Abadal, G. Ferro, A. Leycuras, T. Chassagne
Sensors and Actuators B  (2007) - Article de conférence
ZnO micro-pillar resonators with coaxial Bragg reflectors
R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, and M. Grundmann
AIP Conference Proceedings  (2007) - Article de conférence
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies
J. Cryst. Growth 309 (2007) 1–7 - Papier régulier
Photoelectric properties of highly excited GaN-Fe epilayers grown by modulation- and continuous-doping techniques
Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarasiunas
J. Cryst. Growth 300 (2007) 228-232 - Article de conférence
All-optical characterisation of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE grown GaN
T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, A. Kakanakova, E. Janzen, D. Gogova, B. Monemar, M. Heuken
J. Cryst. Growth 300 (2007) 223-227 - Article de conférence
Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy
H.P.D. Schenk, P. Demolon, S. Ndiaye, M. Laügt, T. Gühne, Z. Bougrioua, P. de Mierry, J.Y. Duboz, A.D. Dräger, C. Netzel, and A. Hangleiter
Proc. Int. Workshop Nitride Based Nanostruct.  (2007) 127 - Article de conférence
Polariton thermalization in GaN microcavities in the strong light-matter coupling regime
F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst 41 (2007) 376 - Article de conférence
Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission
Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux
Phys. Stat. Sol. (a) 204, n°1 (2007) 282-289 - Article de conférence
1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate
M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c) 3 (2006) 3848 - Article de conférence
Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm
M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c) 3 (2006) 3979 - Article de conférence
Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
Y.H. Cho, H. S. Kwack, B.J. Kwon, J. Barjon, J. Brault, B. Daudin, Le Si Dang
Appl. Phys. Lett. 89 (2006) 251914 - Papier régulier
Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects
R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B 74 (2006) 195319 - Papier régulier
Growth of Ag thin films on ZnO(000-1) investigated by AES and STM
E. Duriau, S. Agouram, C. Morhain, T. Seldrum, R. Sporken, J. Dumont
App. Surf. Science 253 (2006) 549 - Papier régulier
Spin-exchange interaction in ZnO-based quantum wells
B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J.A. Sans, T. Taliercio, and C. Morhain
Phys. Rev. B 74 (2006) 153302 - Papier régulier
Magneto-optical spectroscopy of (Zn,Co)O epilayers
W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, P. Kossacki, C. Morhain
Phys. Stat. Sol. B 243 (2006) 863 - Article de conférence
Solar blind AlGaN photodetectors with a very high spectral selectivity
J.Y. Duboz , N. Grandjean, A. Dussaigne, M. Mosca, J.L. Reverchon, P.G. Verly, R.H. Simpson
Eur. Phys. J. Appl. Phys. 33 (2006) 5 - Papier régulier
Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c) 3, N°6 (2006) 2325-2328 - Article de conférence
Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications
E. Feltin, J.F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean
Appl. Phys. Lett. 88 (2006) 051108 - Papier régulier
Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm
M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies
Appl. Phys. Lett. 88 (2006) 91111 - Papier régulier
Role of elastic scattering mechanisms in GaInAs/AlInAs quantum cascade lasers
A. Vasanelli, A. Leuliet, C. Sirtori, A. Wade, G. Fedorov, D. Smirnov, G. Bastard, B. Vinter, M. Giovannini, and J. Faist
Appl. Phys. Lett. 89 (17) (2006) 172120-3 - Papier régulier
Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co
P. Sati, R. Hayn, R. Kuzian, S. Regnier, S. Schafer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, Z. Golacki
Phys. Rev. Lett. 96 (2006) 017203-4 - Papier régulier
investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots
M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
Appl. Phys. Lett. 89 (2006) 231903 - Papier régulier
Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate
M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck
Appl. Phys. Lett. 88 (2006) 231902 - Papier régulier
Strong coupling of light with A and B excitons in GaN microcavities on silicon
I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson
Phys. Rev. B 73 (2006) 033304 - Papier régulier
InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications
M. Richter, B. Damilano, J. Massies, and J.Y. Duboz
Mater. Res. Soc. Symp. Proc. 891 (2006) 0891-EE03-29.1 - Article de conférence
Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates
F. Tinjod, P. de Mierry, D. Lancefield, S. Chenot, E. Virey, J.L. Stone-Sundberg, M.R. Kokta, D. Pauwels
Phys. Stat. Sol. (c) (6) (2006) 2199-202 - Article de conférence
Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature
I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson
Phys. Stat. Sol. (b) 243(7) (2006) 1639 - Article de conférence
Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates
Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV 132 (2006) 365-368 - Article de conférence
Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study
B. Boudjelida, I. Gee, J. Evans-Freeman, S.A. Clark, M. Azize, J.M. Bethoux, and P. de Mierry
Phys. Stat. Sol. C 3 (2006) 1823 - Article de conférence
Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer
K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux
Appl. Phys. Lett. 89 (2006) 191912 - Papier régulier
Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells
T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, X.D. Tang
J. Cryst. Growth 287 (2006) 12 - Article de conférence
HIGH TEMPERATURE PULSED MEASUREMENTS OF AlGaN/GaN HEMTs ON HIGH RESISTIVE Si(111) SUBSTRATE
M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry, and C. Gaquiere
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 48, No. 11 (2006) 2303-2305 - Papier régulier
Room temperature Strong coupling in low finesse GaN microcavities
I.R. Sellers, F. Semond, M. Leroux, et al.
MRS symposium 892 (2006) 485-490 - Article de conférence
Field-effect-modulated SAW devices on AlGaN/GaN heterostructures
J. Pedros, R. Cuerdo, F. Calle, J. Grajal, J.L. Martinez-Chacon, Z. Bougrioua
IEEE Ultrasonics Symposium  (2006) - Article de conférence
Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst (40) (2006) 359-362 - Article de conférence
Generation-recombination reduction in InAsSb photodiodes
M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger
Semicond. Sci. Tech. 21 (12) (2006) 1720-3 - Papier régulier
Sensitivity of synchrotron radiation x-ray diffraction to the chemical ordering in epitaxial perovskite multilayers
M. Nemoz, E. Dooryhee, J.L. Hodeau, C. Dubourdieu, H. Roussel, P. Bayle-Guillemaud
J. Appl. Phys. 100 (2006) 124110 - Papier régulier
Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)
G. Ferro, T. Chassagne, A. Leycuras, F. Cauwet, Y. Monteil
Chem. Vap. Deposition 12 (2006) 483–488 - Papier régulier
Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction
M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, and P. Gibart
Phys. Stat. Sol. (b) 243, No. 7 (2006) 1545–1550 - Article de conférence
Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion
A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos
Mat. Sci. For. 527-529 (2006) 1059 - Article de conférence
Effect of the s,p-d exchange interaction on the excitons in Zn1-xCoxO epilayers
W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, J. A. Gaj, P. Kossacki, and C. Morhain
Phys. Rev. B 73 (3) (2006) 035214-13 - Papier régulier
Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques
T. Malinauskas, K. Jarasiunas, S. Miasojedovas, S. Jursenas, B. Beaumont, P. Gibart
Appl. Phys. Lett. 88 (2006) 202109 - Papier régulier
AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy
S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst 40 (2006) 295-299 - Article de conférence
An AlGaN Based Linear Array for UV Solar Blind Imaging from 240 nm to 280 nm
G. Mazzeo, J.L. Reverchon, J.Y. Duboz, A. Dussaigne
IEEE Sensors Journal 6(4) (2006) 957-63 - Papier régulier
Epitaxial orientation of III-Nitrides grown on R-plane sapphire by metalorganic-vapor-phase-epitaxy
P. Vennéguès and Z. Bougrioua
Appl. Phys. Lett. 89 (2006) 111915 - Papier régulier
Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE
V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès
Phys. Stat. Sol. (c) 3, No.6 (2006) 1548 - Article de conférence
Characterization of structural defects in GaN films grown on sapphire substrates
P. Vennéguès, F. Mathal, and Z. Bougrioua
Phys. Stat. Sol. (c) 3/6 (2006) 1658-1661 - Article de conférence
Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator
A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennéguès and J. Stoemenos
J. Electrochem. Soc. 152(4) (2006) G259-65 - Papier régulier
Application of LTPL Investigation Methods to CVD-Grown SiC
J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud
Chem. Vap. Deposition 12 (2006) 549–556 - Papier régulier
On the determination of the structural parameters of GaxIn1-xAs/AlAsySb1-y superlattices by X-ray diffraction
C. Renard, X. Marcadet, J. Massies
J. Cryst. Growth 297 (2006) 272 - Papier régulier
AlGaN/GaN HEMTs on (001) silicon substrates
S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett. 42 (2006) 117-118 - Papier régulier
Cylindric resonators with coaxial Bragg reflectors
R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, and M. Grundmann
Proc. SPIE  (2006) - Article de conférence
Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire
T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye, M. Teisseire, L. Nguyen, and P. Gibart
Mater. Res. Soc. Symp. Proc.  (2006) - Article de conférence
Properties of (InGa)As/GaAs QW (1200 nm) facet-coated edge-emitting diode laser
T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, J. Kovác, Jr., R. Schmidt-Grund, B. Rheinländer, and D. Pudis
Laser Physics  (2006) 441 - Papier régulier
Stress relaxation during the growth of 3C-SiC/Si thin films
M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Appl. Phys. Lett. 89 (2006) 131906 - Papier régulier
Optoelectronic properties of GaN epilayers in the region of yellow luminescence
C. Grazzi, H.P. Strunk, A. Castaldini, A. Cavallini, H.P.D. Schenk, and P. Gibart
J. Appl. Phys. 100 (2006) 073711 - Papier régulier
Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire
T. Aggerstam, S. Lourdudoss, H.H. Radamson, M. Sjödin, P. Lorenzini, D.C. Look
Thin Solid Films 515 (2006) 705–707 - Article de conférence
Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire
M. Lorenz, R. Johne, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voss, and J. Gutowski
Appl. Phys. Lett. 89 (2006) 243510 - Papier régulier
Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature
I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B 74 (2006) 193308 - Papier régulier
Structural characterisation of Sb-based heterostructures by X-ray scattering methods
C. Renard, O. Durand, X. Marcadet, J. Massies, O. Parillaud
Applied Surface Science 253 (2006) 112 - Article de conférence
Diodes électroluminescentes blanches pour l'éclairage
B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique  (2006) 86 - Livres et chapitres de livres
Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm
J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies
Appl. Phys. Lett. 87 (2005) 251109 - Papier régulier
Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells
C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B 72 (24) (2005) 241305-4 - Papier régulier
Carrier profiles in Fe doped GaN layers grown by MOVPE
M. Azize, Z. Bougrioua, P. Girard, and P. Gibart
Phys. Stat. Sol. (c) 2, 5 (2005) 2153-2156 - Article de conférence
Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs
Z. Bougrioua, M. Azize, A. Jimenez, A.F. Braña, P. Lorenzini, B. Beaumont, E. Muñoz, and P. Gibart
Phys. Stat. Sol. (c) 2, 7 (2005) 2424-2428 - Article de conférence
Internal Photoemission in AlGaN solar blind detectors
J.Y. Duboz, N. Grandjean, F. Omnès, M. Mosca, J.L. Reverchon
Appl. Phys. Lett. 86 (2005) 063511 - Papier régulier
Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells
C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu
Superlattice Microst 38 (2005) 455-463 - Article de conférence - invité
Transmission electron microscopy of GaN layers grown by ELO and micro-ELO techniques
B. Pécz, Zs. Makkai, E. Frayssinet, B. Beaumont and P. Gibart
Phys. Stat. Sol. (c) 2, No. 4 (2005) 1310-1313 - Article de conférence
Characterisation of differently grown GaN epilayers by time-resolved four-wave mixing technique
K. Jarašiunas, T. Malinauskas, R. Aleksiejunas, M. Sudžius, E. Frayssinet, B. Beaumont, J.P. Faurie and P. Gibart
Phys. Stat. Sol. (a) 202, No. 4 (2005) 566– 571 - Article de conférence
Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures.
J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting  (2005) - Article de conférence
Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A. Diforte-Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys. 30 (2) (2005) 77-82 - Papier régulier
High temperature electrical investigations of (Al,Ga)N/GaN heterostructures - Hall sensor applications
C. Consejo, S. Contreras, L. Konczewiez, P. Lorenzini, Y. Cordier, C. Skierbiszewski, J.L. Robert
Phys. Stat. Sol. (c) (4) (2005) 1438-43 - Article de conférence
Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c) 2, No. 7 (2005) 2195-2198 - Article de conférence
Electron mobility and transfer characteristics in AlGaN/GaN HEMTs
Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c) 2, No. 7 (2005) 2720-2723 - Article de conférence
Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert
Proc. SPIE Int. Soc. Opt. Eng. 5840 (2005) 81 - Article de conférence
Optoelectronica (en russe/in Russian)
E. Rosencher & B. Vinter
Technosphera, Moskva  (2005) 1-592 - Livres et chapitres de livres
Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja
Appl. Phys. Lett. 86 (2005) 071105 - Papier régulier
Light-ion beam analysis for microelectronic applications
L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon
Nucl Inst and MethodB 240 (2005) 265 - Article de conférence
Single-Transverse-Mode InGaAsP/InP Edge-Emitting Bipolar Cascade Laser
F. Dross, F. Van Dijk, O. Parillaud, B. Vinter, and N. Vodjdani
IEEE J. Quant. Electr. 41 (2005) 1356-60 - Papier régulier
Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE
A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies
Proc. SPIE Int. Soc. Opt. Eng. 5840 (2005) 72 - Article de conférence
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth 278/1-4 (2005) 393-396 - Article de conférence
(Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers
B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro
Proc. SPIE Int. Soc. Opt. Eng. 5840 (2005) 781 - Article de conférence
High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN
D. Cai, F. Xu, J. Kang, P. Gibart and B. Beaumont
Appl. Phys. Lett. 86 (2005) 211917 - Papier régulier
Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth 278/1-4 (2005) 383-386 - Article de conférence
Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy
A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies
IEEE Photon. Techno. Letters 17, Issue: 6 (2005) 1142-1144 - Papier régulier
Interface band gap engineering in InAsSb photodiodes
M. Carras, J. L. Reverchon, G. Marre, C. Renard, B. Vinter, X. Marcadet, and V. Berger
Appl. Phys. Lett. 87 (10) (2005) 102103-3 - Papier régulier
Behaviour of the 3C-SiC(100) c(2×2) (C-terminated) and 3×2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures
M. Portail, S. Saada, S. Delclos, J.C. Arnault, P. Soukiassian, P. Bergonzo, T. Chassagne, A. Leycuras
Phys. Stat. Sol. (a) 202, No. 11 (2005) 2234-2239 - Article de conférence
Anisotropy-induced polarization mixture of surface acoustic waves in GaN/c-sapphire heterostructures
J. Pedros, F. Calle, J. Grajal, R.J. Jimenez Rioboo, Y. Takagaki, K.H. Ploog and Z. Bougrioua
Phys. Rev. B 72 (2005) 075306 - Papier régulier
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger and C. Gaquière
IEE Microwave and Optical Technology Letters 46, 4 (2005) 311-315 - Papier régulier
AlGaInN resonant-cavity LED devices studied by electro-modulated reflectance and carrier lifetime techniques
G. Blume, T.J.C. Hosea, S.J. Sweeney, P.de Mierry, and D. Lancefield
IEEE Proc. Optoelectronics 152 (2005) 118 - Article de conférence
Control of 3C–SiC/Si wafer bending by the "checker-board" carbonization method
T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet, J. Camassel
Phys. Stat. Sol. (a) 202, No. 4 (2005) 524–530 - Article de conférence
Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennéguès, A. Leycuras
Mat. Sci. For. 483-485 (2005) 213-216 - Article de conférence
Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities
K. Bejtka, F. Rizzi, P. R. Edwards, R.W. Martin, E. Gu, M.D. Dawson, I.M. Watson, I.R. Sellers, F. Semond
Phys. Stat. Sol. (a) 202 (2005) 2648 - Papier régulier
Origin of Below Band-Gap Photoluminescence from GaN Quantum Dots in AlN Matrix
K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A. Yu. Nikitin, M. Teisseire, N. Grandjean, G. Neu, and P. Tronc
AIP Conference Proceedings  (2005) 772, 719 - Article de conférence
Spin Carrier Exchange Interactions in (Ga,Mn)N and (Zn,Co)O Wide Band Gap Diluted Magnetic Semiconductor Epilayers
D. Ferrand, S. Marcet, W. Pacuski, E. Gheeraert, P. Kossacki, J.A. Gaj, J. Cibert, C. Deparis, H. Mariette, and C. Morhain
Journal of Superconductivity and Novel Magnetism 18 (2005) 15 - Article de conférence
Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laugt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels
J. Cryst. Growth 285(4) (2005) 450-8 - Papier régulier
Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well
M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro
Electron. Lett. 41 No.10 (2005) 595 - Papier régulier
High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
D. Gogova, H. Larsson, A. Kasic, G. Reza Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J.P. Faurie, B. Beaumont and P. Gibart,
Jpn. J. Appl. Phys 44 (2005) 1181-1185 - Papier régulier
AlGaInN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques
G. Blume, T.J.C. Hosea, S.J. Sweeney, P. de Mierry, D. Lancefield
IEEE Proceedings Optoelectronics. 152(2) (2005) 118-24 - Article de conférence
Status of AlGaN based Focal Plane Arrays for UV solar blind detection
J.L. Reverchon, G. Mazzeo, A. Dussaigne, J.Y. Duboz
Proc. SPIE  (2005) - Article de conférence
Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)
S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth 280 (2005) 44-53 - Papier régulier
Faceting and structural anisotropy of nanopatterned CdO (110) layers
J. Zúñiga-Pérez, C. Martinez-Tomas, V. Muñoz-Sanjosé, C. Munuera, C. Ocal, M. Laügt
J. Appl. Phys. 98 (2005) 034311 - Papier régulier
1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing
M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC  (2005) - Article de conférence
Submicron periodic poling and chemical patterning of GaN
S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies
Appl. Phys. Lett. 87 (2005) 062106 - Papier régulier
Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures
P. Vennéguès, Z. Bougrioua, J.M. Bethoux, M. Azize, O. Tottereau
J. Appl. Phys. 97 (2005) 4912 - Papier régulier
Ductile relaxation in cracked metal-organis chemical-vapor-deposition-grown AlGaN films on GaN
J.M. Bethoux and P. Vennéguès
J. Appl. Phys. 97 (2005) 123504 - Papier régulier
Solar blind detectors based on AlGan grown on sapphire
J.Y. Duboz, N. Grandjean, F. Omnès, J.L. Reverchon, M. Mosca
Phys. Stat. Sol. (c) N3 (2005) 964-971 - Article de conférence - invité
Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügt, H. Haas
Phys. Stat. Sol. (a) 202, No. 4 (2005) 536-544 - Article de conférence
LP MOVPE growth and characterization of high Al content AlxGa1−xN epilayers
C. Touzi, F. Omnès, B. El Jani and P. Gibart
J. Cryst. Growth 279 (2005) 31-36 - Papier régulier
Inhomogeneous broadening of AlGaN/GaN quantum wells
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B 71 (2005) 75311 - Papier régulier
Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulkcrystals and heterostructures of GaN
K. Jarašiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudžius, S. Miasojedovas, S. Juršenas, A. Žukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, and B. Beaumont
Phys. Stat. Sol. (c) 2, No. 3 (2005) 1006– 1009 - Article de conférence
Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c) 2, No. 7 (2005) 2187-2190 - Article de conférence
Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett. 87 (2005) 021102 - Papier régulier
Spectroscopy of a bulk GaN microcavity grown on Si(111)
N. Ollier, F. Natali, D. Byrne, P. Disseix, , M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys 44 (2005) 4902 - Papier régulier
Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities
H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski
Proc. 9th Ann. Nanophys. Nanoel. Symp.  (2005) 338-339 - Article de conférence
High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy
S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett. 87 (2005) 133505 - Papier régulier
Quantum and transport lifetimes of two-dimentional electrons gas in AlGaN/GaN heterostructures
P. Lorenzini, Z. Bougrioua, A. Tiberj, R. Tauk, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Appl. Phys. Lett. 87 (2005) 232107 - Papier régulier
Surface morphology of AlN and size dispersion of GaN quantum dots
A. Matsuse, N. Grandjean, B. Damilano Et J. Massies
J. Cryst. Growth 274 (2005) 387 - Papier régulier
Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates
C. Renard, X. Marcadet, J. Massies Et O. Parillaud
J. Cryst. Growth 278 (2005) 193 - Papier régulier
Free energy and capture cross section of the E2 trap in n-type GaN
J. Pernot, C. Ulzhöfer, P. Muret, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a) 202, No. 4 (2005) 609-613 - Article de conférence
(Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy
B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies
IEE Proc.-Optoelectron. 151, No. 5 (2004) - Article de conférence
Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b) 241, Issue 12 (2004) 2779-2782 - Article de conférence
Spectroscopy of the electron states in self-organized GaN/AlN quantum dots
A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean
Phys. Stat. Sol. (c) 1, Issue 6 (2004) 1456-1460 - Article de conférence
Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean
J. Cryst. Growth 262, Issues 1-4 (2004) 145-150 - Article de conférence
Electronic structure of wurtzite and zinc-blende AlN
P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette
Eur. Phys. J. B 42 (2004) 351 - Papier régulier
Highly regular nanometer-sized hexagonal pipes in 6H-SiC
W. Wulfhekel, D. Sander, S. Nitsche, A. Leycuras and M. Hanbücken
Applied Physics A 79 (2004) 411-413 1 - Papier régulier
Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors
R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A.D. Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys. 27(1-3) (2004) 293-6 - Papier régulier
Low frequency noise behavior in GaN HEMT's on silicon substrate
L. Bary, E. Angeli, A. Rennane, G. Soubercaze-Pun, J.G. Tartarin, A. Minko, V. Hoel, Y. Cordier, C. Dua, R. Plana, J. Graffeuil
Proc. SPIE 5470 (2004) 286-295 - Article de conférence
Electronic properties of deep defects in n-type GaN
P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron
Superlattice Microst 36 (2004) 435-443 - Article de conférence
High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD
J.Y.Duboz, J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès,
Mater. Res. Soc. Symp. Proc. 798 (2004) 47-51 - Article de conférence
Regular step formation on concave-shaped surfaces on 6H–SiC(0 0 0 1)
W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras and M. Hanbücken,
Surf. Sci. 550 (2004) 8 - Papier régulier
Metal organic vapour phase epitaxy of GaN and lateral overgrowth
P. Gibart
Reports on Progress in Physics 67(5) (2004) 667-715 - Papier régulier
Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties
M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys. 257 (2004) 259-262 - Article de conférence
Thermal characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and an pulsed I-V measurements
R. Aubry, J.C. Jacquet, C. Dua, H. Gérard, B. Dessertenne, M.A. Di Forte-Poisson, Y. Cordier and S.L. Delage
Mat. Sci. For.  (2004) - Article de conférence
Internal Photoemission in AlGaN solar blind detectors
J.Y. Duboz, N. Grandjean, F. Omnès, M. Mosca, J.L. Reverchon
Appl. Phys. Lett. 86 (2004) 063511 - Papier régulier
From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction
T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié
Phys. Rev. B 69 (2004) 073303 - Papier régulier
High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates
A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters 25, No.4 (2004) 167-169 - Papier régulier
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
M. Mosca, J.L. Reverchon, F. Omnès, J.Y. Duboz
J. Appl. Phys. 95 (2004) 4367 - Papier régulier
Multilayer (Al,Ga)N structures for solar-blind detection
M. Mosca, J.L. Reverchon, N. Grandjean, J.Y. Duboz
IEEE J. Selec. Topics in Quant. Electronics 10 (2004) 752 - Papier régulier
Optical and structural characterization of self-organized stacked GaN/AlN quantum dots
G. Salviati, F. Rossi, N. Armani, V. Grillo, O. Martinez, A. Vinattieri, B. Damilano, A. Matsuse, N. Grandjean
J. Phys.: Condens. Matter 16(2) (2004) S115-26 - Papier régulier
Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature
F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc. 798 (2004) 613-18 - Article de conférence
Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs
A. Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laügt
Microelectronics Journal 35:11 (2004) 875-880 - Papier régulier
Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"
T. Chassagne, A. Leycuras, C. Balloud, P. Arcade, H. Peyre, S. Juillaguet
Mat. Sci. For. 457-460 (2004) 273-276 - Article de conférence
Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown Si (100) substrates
T. Chassagne, G. Ferro, H. Haas, A. Leycuras, H. Mank, Y. Monteil
Mat. Sci. For. 457-460 (2004) 265-268 - Article de conférence
Structural reorganisation of vicinal surfaces on 6H-SiC(0001) induced by hot hydrogen etching
W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras, M. Hanbucken
Applied Surface Science 234 (1-4) (2004) 251-255 - Papier régulier
Origin of power fluctuations in GaN resonant-cavity light-emitting diodes
B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, M.A. Poisson
Optics Express 12 (2004) 736 - Papier régulier
Plastic relaxation through buried cracks in AlGaN/GaN heterostructures
J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry
Eur. Phys. J. Appl. Phys. 257 (2004) 263-265 - Papier régulier
Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-UV
J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schule, E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart
J. Appl. Phys. 95 (2004) 8275 - Papier régulier
Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride
S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science 234 (2004) 445 - Article de conférence
Anisotropic propagation of surface acoustic waves on nitride layers
J. Pedrós, F. Calle, J. Grajal, R.J. Jiménez Riobóo, C. Prieto, J.L. Pau, J. Pereiro, M. Hermann, M. Eickhoff and Z. Bougrioua,
Superlattice Microst 36, Issues 4-6 (2004) 815-823 - Article de conférence
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pecz, P. Gibart, B. Beaumont
J. Appl. Phys. 96 (2004) 799-806 - Papier régulier
From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B 69 (2004) 125329 - Papier régulier
About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst 36 (2004) 659 - Article de conférence
Optical properties of edge emitting semiconductor laser diodes with coated Bragg mirror
J. Kovác, F. Uherek, D. Pudis, V. Gottschalch, G. Leibiger, T. Gühne, and B. Rheinländer
IEEE conference proceedings  (2004) - Article de conférence
Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC
A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos
Electrochem. Solid-State Lett. 7 (2004) F93 - Papier régulier
Polarity inversion of GaN(0001) by a high Mg doping
S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies
J. Cryst. Growth 269 (2004) 249 - Papier régulier
GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties
C. Grazzi, A. Castaldini, A. Cavallini, H.P.D. Schenk, P. Gibart, and H. P. Strunk
Eur. Phys. J. Appl. Phys. 27 (2004) 193 - Papier régulier
Phonon deformation potential in hexagonal GaN
F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B 69 (2004) 155215 - Papier régulier
Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy
F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm. 132 (2004) 679 - Papier régulier
Electrical characterisation of hole traps in n-type GaN
F. D. Auret, W. E. Meyer, L. Wu, M. Hayes, M. J. Legodi, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a) 1–6 (2004) - Article de conférence
Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects
C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu
Phys. Stat. Sol. (b) 241 (3) (2004) 631 - Article de conférence
Performances of AlGaN/GaN HEMTs in Planar Technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger, C. Gaquière
Proc. 12th GaAs and other Comp. Sem. Appl. Symp.  (2004) 303-306 - Article de conférence
Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy
H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, S. Grzanka, M. Krysko, P. Prystawko, P. Wisniewski, M. Leszczynski, G. Franssen, J. Muszalski, T. Suski, and P. Perlin
Phys. Stat. Sol. (c) 1 (2004) 193 - Article de conférence
Efficiency optimization of p-type doping in GaN:Mg layers grown by Molecular-Beam Epitaxy
F. B. Naranjo, E. Calleja, Z. Bougrioua, A. Trampert, X. Kong, K. H. Ploog
J. Cryst. Growth 270, issues 3-4 (2004) 815-823 - Papier régulier
Symmetry aspects of exciton–exciton interactions and biexciton transitions in wurtzite semiconductor structures
P. Tronc, Yu. E. Kitaev, V. P. Smirnov, M. Jacobson, G. Neu
Phys. Stat. Sol. (b) 241 (2004) 321 - Article de conférence
Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes
J. M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J. L. Sánchez-Rojas, and E. Calleja
Appl. Phys. Lett. 85 (2004) 40 - Papier régulier
Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys. 96 (2004) 180 - Papier régulier
UV metal semiconductor metal detectors
J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès, F. Semond, J.Y. Duboz, L. Hirsch
Proceedings of NATO conference  (2003) - Article de conférence
High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures
Ch. Consejo, L. Konczewicz, S. Contreras, S. Lepkowsky, M. Zielinski, J.L. Robert, P. Lorenzini, Y. Cordier
Phys. Stat. Sol. (b) 235 (2) (2003) 232-237 - Article de conférence
Power Results at 4GHz of AlGaN/GaN HEMTs on High Resistive Silicon (111) substrate
N. Vellas, C. Gaquière, A. Minko, V. Hoël, J.C. De Jaeger, Y. Cordier, and F. Semond
IEEE Microwave and Wireless Components Letters 13, n°3 (2003) 99-101 - Papier régulier
MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth 251, Issues 1-4 (2003) 811-815 - Article de conférence
Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon
J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys 42 (2003) 118 - Papier régulier
Wide-bandgap semiconductor ultraviolet photodetectors (Topical review)
E. Monroy, F. Omnès, F. Calle
Semicond. Sci. Tech. 18 (2003) R33-R51 - Papier régulier
Carrier mobility versus carrier density in AlGaN/GaN quantum wells
J.L. Farvacque and Z. Bougrioua
Phys. Rev. B 68 (2003) 035335 - Papier régulier
Photodétecteurs pour l'ultraviolet
F. Omnès, E. Monroy
Détecteurs optoélectroniques 6 (2003) 171-204 - Livres et chapitres de livres
Ordering in undoped hexagonal AlxGa1-xN grown on sapphire (0001) with 0.09 < x < 0.247
M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
Phys. Stat. Sol. (b) 236 No 3 (2003) 729-739 - Papier régulier
GaN based UV photodetectors
F. Omnès, E. Monroy
Nitride Semiconductors, Handbook on Materials and Devices 13 (2003) - Livres et chapitres de livres
Engineering of an Insulating Buffer and Use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures
Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, E.T. Palacios, F. Calle, M. Leroux
Phys. Stat. Sol. (a) 195, No. 1 (2003) 93 - Article de conférence
Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys. 94 (2003) 6499 - Papier régulier
Microscopic description of radiative recombinations in InGaN/GaN quantum systems
A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc. L5.5 (2003) - Article de conférence
Atomic structure of pyramidal defects in Mg-doped GaN
P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B 68 (2003) 235214 - Papier régulier
Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
Y. Cordier, P. Lorenzini, J.M. Chauveau, D. Ferré, Y. Androussi, J. Dipersio, D. Vignaud, J.L.Codron
J. Cryst. Growth 251, Issues 1-4 (2003) 822-826 - Article de conférence
Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
J.L. Bubendorff, N. Grandjean, B. Damilano, M. Troyon
J. Cryst. Growth 247 (2003) 284 - Papier régulier
Failure analysis of structure laser by Electrostatic Force Microscopy
M. Azize, P. Girard, M. Teisseire, A. Baranov and A. Joullie
Journal of Vaccum Science Technology B  (2003) - Article de conférence
Photoluminescence spectroscopie of Ga(In)NAs quantum wells for emission at 1.5 µm
M.A Pinault, E. Tournié
Solid State Electronics 47 (2003) 477 - Papier régulier
Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys. 93(1) (2003) 400-9 - Papier régulier
AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density
R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett. 39 (7) (2003) 626-628 - Papier régulier
Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys. 22(2) (2003) 77-82 - Papier régulier
GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters
D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe 03TH8666 (2003) 178 - Article de conférence
Cubic SiC surface structure studied by X-ray diffraction
M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, L. Di-Cioccio, T. Billion
Mat. Sci. For. 433-436 (2003) 571-4 - Article de conférence
Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
J.M. Chauveau, Y. Cordier, H.J. Kim, D. Ferré, Y. Androussi and J. Di Persio
J. Cryst. Growth 251, Issues 1-4 (2003) 112-117 - Article de conférence
Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction
H. Enriquez, M. D'angelo, V.Yu. Aristov, V. Derycke, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond
J. Vac. Sci. Technol. B 21(4) (2003) 1881-5 - Papier régulier
10. Atomic structure determination of the Si-rich beta -SiC(001) 3*2 surface by grazing-incidence x-ray diffraction: a stress-driven reconstruction
M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, M. Noblet, S. Chiang, F. Semond
Phys. Rev. B 68(16) (2003) 165321-1-8 - Papier régulier
Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots
A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin
Mater. Res. Soc. Symp. Proc. 7 (2003) 169 - Article de conférence
Les nitrures d’éléments III
M. Leroux
Matériaux pour l’Optoélectronique  (2003) - Livres et chapitres de livres
60-GHz high power performance In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMTs on GaAs
M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte and D. Théron
IEEE Electron Device Letters 24 N°12 (2003) 724–726 - Papier régulier
Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
J.M. Chauveau, Y. Androussi, A. Lefebvre, J. Di Persio, and Y. Cordier
J. Appl. Phys. 93, Issue 7 (2003) 4219-4225 - Papier régulier
Origins of GaN(0001) Surface Reconstructions
S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci. 541 (2003) 242 - Papier régulier
Improved AlGaN/GaN High Electron Mobility Transistors using AlN interlayers
A. Jiménez, Z. Bougrioua, J. M. Tirado, A. F. Braña, E. Calleja, E. Muñoz, I. Moerman
Appl. Phys. Lett. 82 (2003) 4827 - Papier régulier
Detailed interpretation of electron transport in n-GaN
C. Mavroidis, J. J. Harris, M. J. Kappers, C. J. Humphreys, Z. Bougrioua
J. Appl. Phys. 93 (2003) 9095 - Papier régulier
An X-ray and TEM study of inhomogeneous ordering in AlxGa1-xN layers grown by MOCVD
M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
J. of Physics and Chemistry of Solids 64 (2003) 1653-1656 - Article de conférence
AlGaN/GaN HEMTS: material, processing, and characterization
F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdú, Z. Bougrioua, I. Moerman.
J Mater Sci 14, n° 5/7 (2003) 271-277 - Papier régulier
Observation of Rabi splitting in a bulk GaN microcavity grown on silicon
N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B 68(15) (2003) 153313 - Papier régulier
Residual donors in wurtzite GaN homoepitaxial layers and heterostructures
G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko
Phys. Stat. Sol. (b) 235 (2003) 20 - Article de conférence
GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 mm
E. Tournié, M.A. Pinault, M. Laügt, J.M. Chauveau, A. Trampert, K.H. Ploog
Appl. Phys. Lett. 82 (2003) 1845 - Papier régulier
LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys
T. Tite, O. Pages, M. Ajjoun, J.P. Laurenti, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Solid State Electronics 47 (2003) 455 - Papier régulier
Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy
H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen
J. Cryst. Growth 258 (2003) 232 - Papier régulier
Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy
H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche
Appl. Phys. Lett. 83 (2003) 5139 - Papier régulier
In surface segregation in InGaN/GaN quantum wells
A. Dussaigne, B. Damilano, N. Grandjean, J. Massies
J. Cryst. Growth 251 (2003) 471 - Papier régulier
RBS studies of AlGaN/AlN Bragg reflectors
L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a) 195, No.3 (2003) 502-507 - Article de conférence
Solar blind AlGaN Metal-Semiconducteur-Metal Devices for High Performance Flame Detection
M. Mosca, J.L. Reverchon, N. Grandjean, F. Omnès, J.Y. Duboz, I. Ribet, M. Tauvy
Mater. Res. Soc. Symp. Proc. 764 (2003) C4-4-1 - Article de conférence
Evidence of an impurity band at an n-GaN/sapphire interface
C. Mavroidis, J.J. Harris, R.B. Jackman, Z. Bougrioua, I. Moerman
Diamond and Related Materials 12, issues 3-7 (2003) 1127–1132 - Article de conférence
Isoelecrtonic traps in heavily doped GaAs:(In,N)
R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié
Phys. Rev. B 68 (2003) 235202 - Papier régulier
Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates
N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys. 93(9) (2003) 5222-5226 - Papier régulier
Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector
D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys 42, Part 2, No. 12B (2003) L1509 - Papier régulier
Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys
O. Pages, T. Tite, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Appl. Phys. Lett. 82 (2003) 2808 - Papier régulier
Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
J.M. Chauveau, A. Trampert, K.H. Ploog, M.A. Pinault, E. Tournié
Appl. Phys. Lett. 82 (2003) 3451 - Papier régulier
Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, K. Du, K.H. Ploog
J. Cryst. Growth 251 (2003) 383 - Papier régulier
Annealing effects on the crystal structure of GaInNAs quantum wells with large in and N content grown by molecular beam epitaxy
A. Hierro, J.M. Ulloa, J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, A. Guzman, J.L. Sanchez-Rojas, E. Calleja
J. Appl. Phys. 94 (2003) 2319 - Papier régulier
Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers
S. Kret, G. Maciejewski, P. Dluzewski, P. Ruterana, N. Grandjean, and B. Damilano
Materials Chemistry and Physics 81 (2003) 273 - Article de conférence
Incorporation of Dielectric Layers into the Processing of III-Nitride Based Heterostructure Field Effect Transistors
D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bhir and J. Salzman
J. Electron. Mat. 32, 5 (2003) 355 - Papier régulier
Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities
N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a) 195, No.3 (2003) 543-550 - Article de conférence
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm
K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies
Appl. Phys. Lett. 82 (2003) 868 - Papier régulier
High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett. 82 (2003) 499 - Papier régulier
Indium distribution inside quantum wells : the effect of growth interruption in MBE
A.M. Sanchez, P. Ruterana, S. Kret, P. Dluzewski, G. Maciejewski, N. Grandjean, B. Damilano
Mater. Res. Soc. Symp. Proc. L5.6 (2003) - Article de conférence
Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B 68 (2003) 205301 - Papier régulier
Optical properties of GaN/AlN quantum boxes under high photo-excitation
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c)  (2003) - Article de conférence
Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells
A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E 17 (2003) 64 - Papier régulier
Intraband spectroscopy of self-organized GaN/AlN quantum dots
A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang
Physica E 17 (2003) 60 - Papier régulier
Indium surface segregation in AlSb and GaSb
C. Renard, X. Marcadet, J. Massies, I. Prévot, R. Bisaro, P. Galtier
J. Cryst. Growth 259 (2003) 69 - Papier régulier
Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)
F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett. 82(9) (2003) 1386 - Papier régulier
Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N
E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F.J. Sanchez, M.T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman
Semicond. Sci. Tech. 17,N°9 (2002) L47 - Papier régulier
AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE
Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett. 38(2) (2002) 91 - Papier régulier
Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction
P.A. Shields, R.J. Nicholas, K. Takashina, N. Grandjean, J. Massies
Phys. Rev. B 65 (2002) 195320 - Papier régulier
The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a) 190 (2002) 149 -
Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 190 (2002) 135 -
Exciton oscillator strength in GaN/AlGaN quantum wells
M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Stat. Sol. (a) 190 (2002) 129 -
Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells
A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 190 (2002) 87 - Article de conférence
Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 190 (2002) 155 - Article de conférence
In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies
Mat. Sci. Eng. B 93 (2002) 150 -
Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers
C. Mavroidis, J.J. Harris, R.B. Jackman, I. Harrison, N.J. Ansell, Z. Bougrioua, I. Moerman
J. Appl. Phys. 91 (2002) 9835 - Papier régulier
Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation
S.P. Lepkowski, T. Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies
J. Appl. Phys. 91 (2002) 9622 - Papier régulier
Photoluminescence of GaN microcrystallites prepared by a new solvothermal process.
C. Collado, G. Goglio, G. Demazeau, A.S. Barriere, L. Hirsch, M. Leroux
Mat. Res. Bull. 37 (2002) 841 -
Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
I. Prevot, B. Vinter, X. Marcadet, J. Massies
Appl. Phys. Lett. 81 (2002) 3362 - Papier régulier
Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon.
M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b) 234 (2002) 887 -
Influence of surface treatments on DC performance of GaN-based HFETs
T.D. Mistele, T. Rotter, Z. Bougrioua, M. Marso, H. Roll, H. Klausing, F. Fedler, O.K. Semchinova, J. Aderhold, I. Moerman, J. Graul
Phys. Stat. Sol. (a) 194 N°2 (2002) 452 -
Assessment of GaN metal-semiconductor-metal for high-energy ultraviolet photodetection
E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, J.F. Hochedez
Appl. Phys. Lett. 80 (2002) 1902 - Papier régulier
Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
W. Knap, E. Borovitskaya, M.S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewsk, P. Prystawko, M. Leszczynski, I. Grzegory
Appl. Phys. Lett. 80 (2002) 1228 - Papier régulier
High power AlGaN/GaN HEMTs on resistive silicon substrate
V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett. 38 (2002) 750 - Papier régulier
Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)
D. Sander, W. Wulfhekel, M. Hanbucken, S. Nitsche, J.P. Palmari, F. Dulot, F.A. D'avitaya, A. Leycuras
Appl. Phys. Lett. 81 (19) (2002) 3570-3572 - Papier régulier
Evidence for alloy formation in dilute GaAs:N compounds
E. Tournié, G. Neu, M. Teisseire, M.A. Pinault, M. Laügt
Proc. of the 26th ICPS, Inst. Phys. Conf. Series 171 (2002) 27 - Article de conférence
Fabrication and characterization of AlGaN/GaN HEMTs
F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdu, Z. Bougrioua, I. Moerman
J Mater Sci  (2002) -
High linearity performances of GaN HEMT devices on silicon substrate at GHz
N. Vellas, C. Caquiere, Y. Guhel, M. Werquin, F. Bue, R. Aubry, S. Delage, F. Semond, J.C. De Jaeger
IEEE Electron Device Letters 23(8) (2002) 461 - Papier régulier
Recent progress of the BOLD investigation towards UV detectors for the ESA Solar Orbiter
J.F. Hochedez, J. Alvarez, F.D. Auret, P. Bergonzo, M.C. Castex, A. Deneuville, J.M. Defise, B. Fleck, P. Gibart, S.A. Goodman, O. Hainaut, J.P. Kleider, P. Lemaire, J. Manca, E. Monroy, E. Muñoz, P. Muret, M. Nesladek, F. Omnès, E. Pace, J.L. Pau, V. Ral
Diamond and Related Materials 11 (2002) 427 -
Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films
R.J. Jimenez Rioboo, E. Rodriguez-Canas, M. Vila, C. Prieto, F. Calle, T. Palacios, M.A. Sanchez, F. Omnès, O. Ambacher, B. Assouar, E. Elmazria
J. Appl. Phys. 92(11) (2002) 6869 - Papier régulier
AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)
F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys 41(10B) (2002) L1140-2 - Papier régulier
Interplay between Ga-N and Al-N sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy
A.L. Alvarez, F. Calle, E. Monroy, J.L.Pau, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, F. Omnès, P. Gibart, P.R. Hageman
J. Appl. Phys. 92(1) (2002) 223 - Papier régulier
Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett. 80 (2002) 428 - Papier régulier
200 Mbit/s Data Transmission through 100 Meters of Plastic Optical Fibre with Nitride LEDs
M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont, and K. Panzer
Electron. Lett. 38 (2002) 1457 - Papier régulier
AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments
D. Mistele, T. Rotter, Z. Bougrioua, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul
Mater. Res. Soc. Symp. Proc.  (2002) - …
Atomic force microscopy study of the polymer growth in a polymer stabilized liquid crystal
H. Guillard, P. Sixou, O. Tottereau
Polym. Adv. Technol. 13 (2002) 491 - …
Structural defects and relation with optoelectronic properties in highly Mg-doped GaN.
M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a) 192 (2002) 394 - Article de conférence
Displaced substitutional phosphorus acceptors in zinc selenide
D. Wolverson, J.J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, K. Ohkawa, D. Hommel, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b) 229 (2002) 257 - …
Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andres
Phys. Stat. Sol. (a) 188 (2002) 307 - …
Structure and morphology of concave-shaped surfaces on 6H-SiC(0001) after H2 etching
F. Dulot, L. Mansour, A. Leycuras, W. Wulfhekel, D. Sander, F. Arnaud D'avitaya, M. Hanbucken
Applied Surface Science 187 (2002) 219 - …
Growth of gallium nitride epitaxial layers by metal organics vapour phase epitaxy and applications
B. Beaumont, F. Omnès, P. De Mierry, P. Gibart
Vide Science, Technique et Applications 3-4 (2002) 553 - …
Self compensation of the phosphorus acceptor in ZnSe
D. Seghier, H. Gislasson, C. Morhain, M. Teisseire, E. Tournié, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b) 229 (2002) 251 - …
Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes
S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a) 139 (2002) - …
Reliability of Schottky contacts on AlGaN
E. Monroy, F. Calle, T. Palacios, J. Sanchez-Osorio, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana
Phys. Stat. Sol. (a) 188 (2002) 367 - …
AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a) N°1 (2002) 61 - Article de conférence
Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers
C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b) 229 (2002) 881 - …
Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN
P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B 93 (2002) 224 - Article de conférence
Full Si wafer conversion into bulk 3C-SiC
A. Leycuras, O. Tottereau, P. Vicente, L. Falkovsky, P. Girard, J. Camassel
Mat. Sci. For. 389-393 (2002) 147 - …
On the effect of high Mg doping on the polarity of GaN
P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean
Institute of Physics Conferences Series n°169 (2002) 307 - Article de conférence
Impact of the defects on the electrical and optical properties of AlGaN ultraviolet detectors
M. Hanzaz, A. Bouhdada, P. Gibart, F. Omnès
J. Appl. Phys. 92(1) (2002) 13 - Papier régulier
2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire
F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie
Phys. Stat. Sol. (b) 229 (2002) 931 - Article de conférence
Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart
Appl. Phys. Lett. 75 (2002) 2587 - Papier régulier
Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures
A. Jimenez, E. Calleja, E. Muñoz, M. Varela, C. Ballesteros, U. Jahn, K. Ploog, F. Omnès, P.Gibart
Mat. Sci. Eng. B 93 (2002) 64 - …
Modelling and spectroscopy of GaN microcavities
N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a) 190 (2002) 187 - Article de conférence
Properties of a hole trap in n-type hexagonal GaN
P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
J. Appl. Phys. 91(5) (2002) 2998 - Papier régulier
Relation between microstructure and 2DEG properties in AlGaN/GaN structures
B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b) 234 N°3 (2002) 830 - …
Free carrier mobility in AlGaN/GaN quantum wells
J.L. Farvacque, Z. Bougrioua, F. Carosella, I. Moerman
J. Phys.: Condens. Matter 14 (2002) 13319 - Papier régulier
Sub-micron technology in group-III nitrides : application to electronic devices
T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnès, Z.Bougrioua, E. Muñoz
Proc. 11th Europ.Heterostructure Technology Work.  (2002) - …
The GaN yellow luminescence center observed using optoelectronic modulation spectroscopy
C.H. Chiu, F. Omnès, C. Caquiere, P. Gibart, J.G. Swanson
Journ. of Physics D 35 (2002) 609 - Papier régulier
Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate
S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy
Electron. Lett. 38 N°8 (2002) 389 - Papier régulier
Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors
T. Palacios, E. Monroy, F. Calle, F. Omnès
Proc. of the IEEE Device Research Conf.  (2002) 141 - …
Donor spectroscopy in wurtzite GaN heterostructures
G. Neu, M. Teisseire-Doninelli, C. Morhain
Proc. of the 26th ICPS, Inst. Phys. Conf. Series 171 (2002) 19 - Article de conférence
High responsivity submicron metal-semiconductor-metal ultraviolet detectors
T. Palacios, E. Monroy, F. Calle, F. Omnès
Appl. Phys. Lett. 81 (2002) 3198 - Papier régulier
Raman scattering in GaN pillar arrays
F. Demangeot, J. Gleize, J. Frandon, M.A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, N. Grandjean
J. Appl. Phys. 91 (2002) 2866 - Papier régulier
In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy
H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett. 80 (2002) 174 - Papier régulier
Silicon effect on GaN surface morphology
Z. Benzarti, I. Halidou, O. Tottereau, T. Boufaden, B. El Jani
Microelectronics Journal 1088 (2002) - …
Minority Carrier Diffusion Lengths in silicon doped gallium nitride thin films measured by electron beam induced current
C. Grazzi, M. Albrecht, H.P. Strunk, Z. Bougrioua, I. Moerman
Solid State Phenomena 82-84 (2002) 807 - …
Vibrational evidence for percolative effect in Zn1-xBexSe/GaAs
O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b) 229 (2002) 25 - …
Vertical cavity InGaN LEDs grown by MOVPE
P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a) 192 (2002) 335 - Article de conférence
Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector
L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys. 91 (2002) 6095 - Papier régulier
Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys. 92 (2002) 5602 - Papier régulier
Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications
F. Semond, Y. Cordier, N. Grandjean et al.
Phys. Stat. Sol. (a) 188 (2) (2001) 501-510 - Article de conférence - invité
Zn(MgBe)Se ultraviolet photodetectors
F. Vigué, J.P. Faurie
J. Electron. Mat. 30 (2001) 662 - …
CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia
T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Sol. Stat. Comm. 117 (2001) 445 - Papier régulier
Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors.
G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet
Physica B 302-303 (2001) 39 - …
Silicon nitride passivation effects on GaN MESFET
C. Gaquiere, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, J.C. De Jaeger, F. Omnès
Proceedings WOCSDICE  (2001) VIII-11 - …
(Al,Ga)N ultraviolet detectors on sapphire and Si substrates
E. Muñoz, E. Monroy, J.L. Pau, F. Calle, M.A. Sanchez, E. Calleja, F. Omnès, B. Beaumont, P. Gibart
Proceedings WOCSDICE  (2001) XV-5 - …
Raman study of ZnxBe1-xSe solid solutions
O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, O. Gorochov, C. Chauvet, E. Tournié, J.P. Faurie
Optical Matérials 17(1-2) (2001) 323 - …
2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE"
Z. Bougrioua, J.L. Farvaque, I. Moerman, F. Carosella
Phys. Stat. Sol. (b) 228 (2001) 625 - …
Growth of GaN on (111) Si : a route towards self-supported GaN
H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart
J. Cryst. Growth 231 (2001) 329 - …
Dielectric microcavity in GaN/Si
J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a) 183 (2001) 35 - …
Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie
J. Appl. Phys. 90 (2001) 5115 - Papier régulier
Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields
M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 183 (2001) 61 - …
Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells
D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 183 (2001) 129 - …
Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy
L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 183 (2001) 139 - …
Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Daudin, N. Grandjean
Phys. Stat. Sol. (a) 183 (2001) 157 - …
High quality p+-n+ GaAs tunnel junction diode grown by atmospheric pressure MOVPE
L. Beji, B. El Jani, P. Gibart
Phys. Stat. Sol. (a) 183 (2001) 273 - …
From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization
M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For. 353-356 (2001) 795 - …
Strain state in GaN epilayers from optical experiments
E. Deleporte, C. Guenaud, M. Voos, B. Beaumont, P. Gibart
J. Appl. Phys. 89 (2001) 1116 - Papier régulier
Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells
B. Damilano, N. Grandjean, C. Pernot, J. Massies
Jpn. J. Appl. Phys 40 (2001) L918 - …
Application and performance of GaN based UV detectors
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
Phys. Stat. Sol. (a) 185(1) (2001) 91 - …
Influence of alloy stability on the photoluminescence properties of GaAs//GaAs quantum wells grown by molecular-beam epitaxy
M.A. Pinault, E. Tournié
Appl. Phys. Lett. 79 (2001) 3404 - Papier régulier
Diamond UV detectors for future solar physics missions
J.F. Hochedez, P. Bergonzo, M.C. Castex, P. Dhez, O. Hainaut, M. Sacchi, J. Alvarez, H. Boyer, A. Deneuville, P. Gibart, B. Guizard, J.P. Kleider, P. Lemaire, C. Mer, E. Monroy, E. Muñoz, P. Muret, F. Omnès, J.L. Pau, V. Ralchenko, D. Tromson, E. Verwicht
Diamond and Related Materials 10(3-7) (2001) 673 - …
Optical properties of self-assembled InGaN/GaN quantum dots
T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies
Mat. Sci. Eng. B 82 (2001) 22 - …
Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : spectroscopic characterization and dislocation contrasts
S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart
J. Appl. Phys. 89 (2001) 3736 - Papier régulier
Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates
F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie
Appl. Phys. Lett. 79 (2001) 194 - Papier régulier
Modeling of absorption and emission spectra of InGaN layers grown by MBE
L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies
Mat. Sci. Eng. B 82 (2001) 71 - …
Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b) 224 (2001) 53 - …
Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111)
F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a) 183 (2001) 163 - …
Surface morphology of GaN grown by molecular beam epitaxy
S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B 82 (2001) 56 - …
Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart
Mat. Sci. Eng. B 82 (2001) 163 - Article de conférence
InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible qpectrum
B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B 82 (2001) 224 - …
Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B 82 (2001) 256 - …
High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy
F. Semond, P. Lorenzini, N. Grandjean, J. Massies
Appl. Phys. Lett. 82 (2001) 335 - Papier régulier
On carrier localization in GaInNAs/GaAs quantum well heterostructures
M.A. Pinault, E. Tournié
Appl. Phys. Lett. 78(11) (2001) 1562 - Papier régulier
InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties
B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth 227/228 (2001) 466 - …
Wide band-gap ZnMgBeSe alloys grown onto GaAs by molecular-beam epitaxy
E. Tournié, F. Vigué, M. Laügt, J.P. Faurie
J. Cryst. Growth 223 (2001) 461 - …
Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy
E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart
Jpn. J. Appl. Phys 40 (2001) L738 - …
Stress control in GaN grown on silicon(111) by MOPVE
E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart
Appl. Phys. Lett. 79 (2001) 3220 - Papier régulier
GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy
N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Semicond. Sci. Tech. 16 (2001) 358 - Papier régulier
Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultra-violet photodetection
F. Vigué, E. Tournié, J.P. Faurie
IEEE J. Quant. Electr. 37(9) (2001) 1146 - Papier régulier
Epitaxial Lateral overgrowth of GaN
B. Beaumont, P. Vennéguès, P. Gibart
Phys. Stat. Sol. (b) 227 (2001) 1-43 - Papier régulier
Group-III nitride quantum heterostructures grown by molecular beam epitaxy
N. Grandjean, B. Damilano, J. Massies
J. Phys.: Condens. Matter 13 (2001) 6945 - Papier régulier
Crack-free thick GaN layers on silicon(111) by MOVPE
E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart
Phys. Stat. Sol. (a) 188 (2001) 531 - Article de conférence
Epitaxial Lateral Overgrowth of GaN on Silicon (111)
E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart
Phys. Stat. Sol. (a) 188 (2001) 733 - Article de conférence
Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE
H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle
Phys. Stat. Sol. (a) 188 (2001) 899 - Article de conférence
Donor and donor bound-exciton spectroscopy in wurtzite GaN heterostructures.
M. Teisseire, G. Neu, C. Morhain
Phys. Stat. Sol. (b) 228 (2001) 501 - …
Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices
F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras
Ann. Chim. Sci. Mater. 26 (2001) 177 - Article de conférence
Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes
F. Vigué, E. Tournié, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Appl. Phys. Lett. 78(11) (2001) 4190 - Papier régulier
Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes
M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b) 228 (2001) 129 - …
Excitonic properties of ZnS quantum wells
B. Urbaszek, C.M. Townsley, X. Tang, C. Morhain, A. Balocchi, K.A. Prior, R.J. Nicholas, B.C. Cavenett
Phys. Rev. B 64(15) (2001) 155321 - Papier régulier
Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe
J.J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel,E. Tournié, J.P. Faurie
Phys. Rev. B 64 (2001) 205-206, 1 - Papier régulier
Vibrational evidence for percolative effect in ZnBeSe
O. Pages, M. Aijoun, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B 65 (2001) 035213 - Papier régulier
Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure
A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux
Phys. Rev. B 89 (2001) 3775 - Papier régulier
Nuclear microprobe analysis of GaN bases light emitting diodes
L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz
Phys. Stat. Sol. (a) 188 (2001) 171 - …
High performance solar blind detectors based on AlGaN grown by MBE on Si
J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 188 (2001) 325 - …
Micro-Raman study of wurtzite AlN layers grown on Si(111).
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, D. Semond, J. Massies
Phys. Stat. Sol. (a) 188 (2001) 511 - …
Potentialities of GaN-based microcanivities grown on silicon substrates
N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a) 188 (2001) 519 - …
Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 188 (2001) 839 - …
Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect
M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Rev. B 64 (2001) 121304 - Papier régulier
Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect
P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b) 228 (2001) 65 - …
Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers
C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b) 228 (2001) 579 - …
Phonon-assisted optical transitions in GaN with impurities and defects
P. Tronc, Yu. E. Kitaev, G. Wang, M.F. Limonov, G. Neu
Physica B 302-303 (2001) 291 - …
Raman mapping of epitaxial lateral overgrown GaN : stress at the coalescence boundary
M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart
J. Appl. Phys. 90 (2001) 3656 - Papier régulier
High quality AlxGa1-xN(0.15 £ x £ 0.45)/GaN distributed Bragg reflectors grown by MBE for resonant cavity LEDs
S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Semicond. Sci. Tech. 16 (2001) 913 - Papier régulier
Heterostructure field effect transistor types with novel gate dielectrics
D. Mistele, T. Rotter, Z. Bougrioua, K.S. Rover, F. Fedler, H. Klausing, J. Stemmer, O.K. Semchinova, J. Aderhold, J. Graul
Phys. Stat. Sol. (a) 188, N°1 (2001) 225 - …
Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy
H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche
Phys. Stat. Sol. (a) 188 (2001) 537 - Article de conférence
Core structure of dislocations in GaN revealed by transmission electron microscopy
T. Remmele, M. Albrecht, H.P. Strunk, A.T. Blumenau, M.I. Heggie, J. Elsner. T. Frauenheim, H.P.D. Schenk, and P. Gibart
Proc. Royal Microsc. Soc. Conf.  (2001) 323-326 - Article de conférence
High temperature nitride sources for plastic optical fibre data buses
B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi
Proc. Tenth Int’l Plastic Optic Fibres Conf. 10 (2001) 81-87 - Article de conférence
Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy
P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
Mat. Sci. Eng. B 82 (2001) 91 - …
Characterization of electron-irradiated n-GaN
S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, P. Gibart
Appl. Phys. Lett. 78(11) (2001) 1538 - Papier régulier
Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields
D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 188 (2001) 851 - …
Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
P. Ruterana, G. De Saint Jores, M. Laügt, F. Omnès, E. Bellet-Amalric
Appl. Phys. Lett. 78(3) (2001) 344 - Papier régulier
Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Mat. Sci. Eng. B 82 (2001) 140 - …
Photoconductance measurements and Stokes shift in InGaN alloys
J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B 82 (2001) 197 - …
Guided elastic waves in GaN on sapphire
S. Camou, Th. Pastureaud, H.P.D. Schenk, S. Ballandras, and V. Laude
Electron. Lett. 37 (2001) 1053 - Papier régulier
Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Phys. Rev. B 64 (2001) 115319 - Papier régulier
New form of ordering in AlGaN
P. Ruterana, G. De Saint-Jores, F. Omnès
Mat. Sci. Eng. B 82 (2001) 203 - …
High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy
P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett. 78 (2001) 1252 - Papier régulier
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett. 78 (2001) 1538 - Papier régulier
In-situ etching at InGaAs/GaAs quantum well interfaces
E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia
J. Cryst. Growth 222 (2001) 471 - …
Direct signature of strained GaN quantum dots by Raman scattering
J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett. 79 (2001) 686 - Papier régulier
Quantum beats of free and bound excitons in GaN
K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kkuwata-Gonokami, B. Beaumont, P. Gibart
Appl. Phys. Lett. 79 (2001) 1097 - Papier régulier
Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies
Appl. Phys. Lett. 79 (2001) 1483 - Papier régulier
Impact ionization of excitons in an electric field in GaN
D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart
J. Phys.: Condens. Matter 13 (2001) 7043 - Papier régulier
III nitrides and UV detection
E. Muñoz, E. Monroy, J.L. Pau, F. Calle, F. Omnès, P. Gibart
J. Phys.: Condens. Matter 13(32) (2001) 7115 - Papier régulier
High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE
S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Appl. Phys. Lett. 79 (2001) 2136 - Papier régulier
Magneto-photoluminescence of AlGaN/GaN quantum wells
P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
J. Cryst. Growth 230 (3-4) (2001) 487 - …
Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy
P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy 202 (2001) 212 - …
Free-carrier effects in gallium n itride epilayers : valence-band dispersion
P.A. Shields, R.J. Nicholas, F.M. Peeters, B. Beaumont, P. Gibart
Phys. Rev. B 64 (2001) 081203 - Papier régulier
Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies
P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
Phys. Rev. B 63 (2001) 245319 - Papier régulier
AlGaN-based UV photodetectors
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Cryst. Growth 230 (3-4) (2001) 537 - …
Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : time evolution with low energy electron beam
S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart, J.D. Ganiere, K. Leifer
J. Appl. Phys. 89 (2001) 7966 - Papier régulier
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies
J. Appl. Phys. 89 (2001) 1070 - Papier régulier
Deuterium diffusion in Mg-doped GaN layers grown by MOVPE
P. Theys, Z. Teukam, F. Jomard, P. De Mierry, A.Y. Polyakov, M. Barbe
Semicond. Sci. Tech. 16 (2001) L53 - Papier régulier
Finite element analysis of epitaxial lateral overgrown GaN : voids at the coalescence boundary
M. Benyoucef, M. Kuball, G. Hill, M. Wisnom, B. Beaumont, P. Gibart
Appl. Phys. Lett. 79 (2001) 4127 - Papier régulier
Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett. 77 (2000) 2189 - Papier régulier
GaN and InGaN quantum dots grown by MBE : from UV to red light emission
N. Grandjean, B. Damilano, J. Massies
Proc. of Int. Workshop on Nitride Semiconductors  (2000) 1002 - …
High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO
H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart
Diamond and Related Materials 9 (2000) 452 - …
ZnSe-based Schottky barrier photodetectors
F. Vigué, E. Tournié, J.P. Faurie
Electron. Lett. 36(25) (2000) 352 - Papier régulier
High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-ultraviolet spectral range
F. Vigue, P. De Mierry, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Electron. Lett. 36 (2000) 826 - Papier régulier
Green electroluminescent (Ga,InAl)N LEDs grown on Si(111)
S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux
Electron. Lett. 36(20) (2000) 1728 - Papier régulier
Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.
N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
J. Appl. Phys. 88 (2000) 183 - Papier régulier
Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC
P. Vennéguès, H. Lahrèche
Appl. Phys. Lett. 77 (2000) 4310 - Papier régulier
Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation
H.P.D. Schenk, M. Leroux, and P. De Mierry
J. Appl. Phys. 88 (2000) 1525 - Papier régulier
Growth of CVD thin films and thick LPE 3C-SiC in a specially designed reactor
A. Leycuras
Mat. Sci. For. 338-342 (2000) 241 - …
MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization
S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films 380 (2000) 195 - …
AlGaN based structures on sapphire for visible blind Schottky barrier UV photodetectors : towards high performance device applications
F. Omnès, E. Monroy, B. Beaumont, F. Calle, E. Muñoz, P. Gibart
Proc. SPIE 3948 (2000) 234 - …
Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN
G. Neu, M. Teisseire, N. Grandjean, H. Lahrèche, B. Beaumont, I. Grzegory, S. Porowski, P. Tronc
Proc. Int. Conf. on the Physics of Semiconductors  (2000) - …
AlxGa1-xN-based UV photodetectors and waveguides
F. Omnès, E. Monroy, B. Beaumont, E. Doghèche, F. Calle, E. Muñoz, P. Gibart
Proc. of Compound Semiconductor Power Transistors 2000-1 (2000) 205 - …
Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films
M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai
Appl. Phys. Lett. 77 (2000) 2115 - Papier régulier
ZnSe-based heterostructures for blue-green lasers.
J.P. Faurie, E. Tournié
CR. Acad. Sci. Paris 1, série IV (2000) 23 - …
AlxGa1-xN based UV visible –blind photodetector applications
F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart
Opto-Electronics Review 8(1) (2000) 43 - …
Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers
E. Tournié, G. Neu, M. Teisseire, J.P. Faurie, H. Pelletier, B. Theys
Phys. Rev. B 62(19) (2000) 12868 - Papier régulier
ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range
F. Vigué, A. Bouille, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (a) 181(1) (2000) 301 - …
Low-noise metal-insulator-semiconductor UV photodiodes based on GaN
E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès
Electron. Lett. 36(25) (2000) 2096 - Papier régulier
Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum
A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire
J. Cryst. Growth 209 (2000) 435 - …
Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy
H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart
J. Appl. Phys. 87 (2000) 577 - Papier régulier
Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods
P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart
J. Appl. Phys. 87(12) (2000) 4175 - Papier régulier
Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
N. Grandjean, B. Damilano, J. Massies S. Dalmasso
Sol. Stat. Comm. 113 (2000) 495 - Papier régulier
GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range
B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science 164 (2000) 241 - …
Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001)
C. Chauvet, E. Tournié, J.P. Faurie
J. Cryst. Growth 214/215 (2000) 95 - …
Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a) 180 (2000) 363 - …
Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties
C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie
Journal Electron. Mater. 29(6) (2000) 883 - …
Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers
G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko
Appl. Phys. Lett. 77 (2000) 1348 - Papier régulier
Nature of the bandgap of Zn1-xBexSe alloys,
C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B 61 (2000) 5332 - Papier régulier
In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)
S. Vézian, J Massies, F. Semond, N. Grandjean P. Vennéguès
Phys. Rev. B 61 (2000) 7618 - Papier régulier
Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular- beam epitaxy
G. Neu, E. Tournié, C. Morhain, M. Teisseire, J.P. Faurie
Phys. Rev. B 61 (2000) 15789 - Papier régulier
Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range
F. Vigué, E. Tournié, J.P. Faurie
Appl. Phys. Lett. 76 (2000) 242 - Papier régulier
Growth of gallium nitride epitaxial layers and applications
B. Beaumont, P. Gibart, N. Grandjean, J. Massies
C.R. Acad. Sci. Paris 1, série IV (2000) 35 - …
Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN
P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett. 77 (2000) 880 - Papier régulier
InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K
B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie
Appl. Phys. Lett. 77 (2000) 1268 - Papier régulier
Hydrogen/deuterium : a probe to investigate carrier-compensation in ZnSe:N
E. Tournié, H. Pelletier, G. Neu, B. Theys, A. Lusson, M. Teisseire, C. Chauvet, J.P. Faurie
J. Cryst. Growth 214/215 (2000) 507 - …
High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates
W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc. 639 (2000) G7.3 - …
Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies
Sol. Stat. Comm. 115 (2000) 575 - …
Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)
H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart
J. Cryst. Growth 217 (2000) 13 - Papier régulier
Réalisation de structures photoniques avancées
D. Peyrade, F. Carcenac, L. Manin, V. Thierry-Mieg, N. Grandjean, D. Coquillat, R. Legros, Y. Chen
J. Phys. IV France 10 (2000) 8-125 - …
Comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN
B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahrèche, F. Omnès
J. Electron. Mat. 29 (2000) 603 - …
Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN
F.K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Muñoz
J. Electron. Mat. 29 (2000) 1351 - …
Infrared studies on GaN single crystals and homoepitaxial layers
E. Frayssinet, W. Knap, P. Prystawko, M. Leszczynski, I.Grzegory, T. Suski, B. Beaumont, P. Gibart
J. Cryst. Growth 218 (2000) 161 - …
Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements
A.F. Brana, A.F. Diaz-Paniagua, F. Batallan, J.A. Garrido, E. Muñoz, F. Omnès
J. Appl. Phys. 88(2) (2000) 932 - Papier régulier
Time response analysis of ZnSe-based Schottky barrier photodetectors
E. Monroy, F. Vigue, F. Calle, E. Muñoz and J.P. Faurie,
Appl. Phys. Lett. 77 (2000) 2761 - Papier régulier
Native vacancies in N-doped and undoped ZnSe layers studied by positron annihilation.
P. Desgardin, J. Oila, K. Saarinen, P. Hautojarvi, E. Tournié, J.P. Faurie, C. Corbel
Phys. Rev. B 62 (2000) 15711 - Papier régulier
High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates
E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude
Appl. Phys. Lett. 77 (2000) 2551 - Papier régulier
Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures
E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc. 639 (2000) G7.5 - …
Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures
P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Mater. Res. Soc. Symp. Proc. 639 (2000) G9.8 - …
Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation
K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean
Mater. Res. Soc. Symp. Proc. 639 (2000) G9.11 - …
Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red
Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc. 639 (2000) G10.1.1-11 - Article de conférence - invité
AlGaN photodiodes for monitoring the solar UV radiation
E. Muñoz, E. Monroy, F. Calle, F. Omnès, P. Gibart
Journal of Geophysical Research 105 (2000) 4865 - …
Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN
P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra
MRS Internet J. Nitride Semicond. Res. 5 (2000) 8 - Papier régulier
AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment
T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude
Proc. IEEE Ultrason. Symp. 1 (2000) 293-297 - Article de conférence
Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes
E. Monroy, F. Calle, J.L. Pau, F.J. Sanchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Appl. Phys. 88(2) (2000) 2081 - Papier régulier
Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation
A. Amokrane, S. Dassonneville, B. Sieber, J.L. Farvaque, B. Beaumont, V. Bousquet, P. Gibart, J.D. Ganiere, K. Leifer
J. Phys.: Condens. Matter 12 (2000) 10271 - Papier régulier
Modeling of the spectral response of the AlxGa1-xN Schottky barrier ultraviolet photodetectors
A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, E. Muñoz
J. Appl. Phys. 87(12) (2000) 8286 - Papier régulier
Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry
L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies,
Jpn. J. Appl. Phys 39 (2000) 20 - Papier régulier
Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies
Thin Solid Films 364 (2000) 156 - …
GaAs/GaAs twist-bonding for compliant substrates : interface structure and epitaxial growth
G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.C. Harmand, F. Glas
Applied Surface Science 164 (2000) 15 - …
Time-resolved spectroscopy of MBE-grown nitride based heterostructures
M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald
Phys. Stat. Sol. (a) 178 (2000) 101 - …
Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies
Phys. Stat. Sol. (a) 180 (2000) 127 - …
Modeling of the spectral response of the AlxGa1-xN p-n junction photodetectors
M. Hanzaz, A. Bouhdada, E. Monroy, E. Muñoz, P. Gibart, F. Omnès
Eur. Phys. J. Appl. Phys. 11 (2000) 29 - …
Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots
A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a) 180 (2000) 375 - …
Study of the band alignment in (Zn,Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy
C. Guenaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, J.P. Faurie
J. Appl. Phys. 87 (2000) 1863 - Papier régulier
TEM study of crystal defects in ZnSe/GaAs(001) epilayers
S. Lavagne, C. Levade, G. Canderschaeve, J. Crestou, E. Tournié, J.P. Faurie
J. Phys.: Condens. Matter 12(49) (2000) 10287 - Papier régulier
Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films
Y. Xin, J.I. Arslan, S. Sivananthan, N.D. Browning, S.J. Pennycook, F. Omnès, B. Beaumont, J.P. Faurie, P. Gibart
Appl. Phys. Lett. 76 (2000) 466 - Papier régulier
Optically detected magneto resonance mapping on the yellow luminescence in GaN
K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart
Appl. Phys. Lett. 76 (2000) 1828 - Papier régulier
GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates
M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu
Appl. Phys. Lett. 76 (2000) 3807 - Papier régulier
Surface kinetics of GaN evaporation and growth by molecular beam epitaxy
S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano
Surf. Sci. 450 (2000) 191 - …
A Raman study of ZnxBe1-xSe alloy (100) epitaxial layers
O. Pages, M. Ajjouin, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Appl. Phys. Lett. 77 (2000) 519 - Papier régulier
Signature of GaN-AlN quantum dots by nonresonant Raman scattering
J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett. 77 (2000) 2174 - Papier régulier
(Al,Ga)N Ultraviolet Photodetectors and Applications
E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnès, P. Gibart
Phys. Stat. Sol. (a) 180 (2000) 293 - …
Spectroscopic studies of InGaN ternary alloys
H.P.D. Schenk, P. De Mierry, F. Omnès, and P. Gibart
Phys. Stat. Sol. (a) 176 (1999) 307 - Article de conférence