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Meeting : JNMO 2018 in Agay (06/2018)

Logo of JNMO 2018 Crhea will organize the 16th Nano, Micro and Optoelectronics days (JNMO 2018) from the 13th to 15th of june 2018 in Agay (Var, France). See congress website... (in french)


A new director for CRHEA (01/2018)

Picture of Philippe Boucaud Philippe Boucaud, researcher coming from the "Centre de Nanosciences et de Nanotechologies" (C2N), becomes the new Director of CRHEA from the 1st of january 2018. He replaces in that role Jean-Yves Duboz.

Researcher position at CRHEA(11/2017)

Crhea CRHEA is looking for candidates for a permanent researcher position at CRHEA, in the frame of the 2018 CNRS recruitment campaign. A profile such as “Epitaxy of Semiconductors”, with a possible but not mandatory focus on “topological insulators” is desired. Alternatively, “epitaxy of functional oxydes” is also a profile of interest for CRHEA. Contact : Jean-Yves Duboz (director) or any other CRHEA researcher the candidate might know.

«Nanostructures of band gap semiconductors - Nanostrukturierte Halbleiter mit Bandlückenmodulationen (11/2017)

CDFA 2017 The annual Workshop of the Franco-German doctoral college CDFA-05-06 was held at CRHEA on Friday, November 10, 2017. Students and researchers from the University of Bochum (Germany) and CRHEA met in Valbonne to tackle scientific topics ranging from quantum dots to non-linear optics via zinc oxide or graphene. You can discover the pictures here and here. See you in 2018 in Bochum!

Crhea and EasyGaN are featured in the November 2017 "Open Access Government" Magazine (11/2017)

Open Access Governement The essential role of CRHEA in the emergence of a GaN on Si sector in France is highlighted in an article published on page 226 in the November 2017 edition of the "Open Access Government" magazine. You can discover it Here. The complete magazine, with an editorial by Minister F. Vidal, is available on this link:


03/05/2018 at 10:30
Sergey Ivanov (Ioffe, Saint-Petersbourg)
Advances in plasma-assisted molecular beam epitaxy in Ioffe: ultrathin GaN/AlN MQWs and site-selective core-shell InGaN/AlGaN nanorods

02/05/2018 at 11:00
Samuel Matta (CNRS-CRHEA, Valbonne)
AlGaN quantum dots grown by molecular beam epitaxy for ultraviolet light emitting diodes


Thesis : (4)

Atomic scale studies of high O and Si doping effects on III-N films properties
From edge-emitting polariton lasers to nonlinear on-chip polariton circuits
Red LEDs based on graphene (2D crystals)/InGaN heterostructures
Biocompatible Electronic Devices based on Zinc Oxide

Probations : (1)

GaN pour la proton-thérapie

Post-docs : (1)

GaN and ZnO nanophotonics


Photo du laboratoire dans la pinède

rue Bernard Grégory

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